| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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PSMN038-100YLX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21.3A Pulsed drain current: 120A Power dissipation: 94.9W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 103.5mΩ Mounting: SMD Gate charge: 39.2nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 589 шт: термін постачання 14-30 дні (днів) |
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PSMN4R6-60BS,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 565A Power dissipation: 211W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: SMD Gate charge: 70.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 671 шт: термін постачання 14-30 дні (днів) |
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PSMN2R0-30YLE,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 1015A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1314 шт: термін постачання 14-30 дні (днів) |
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PSMN3R0-60PS,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 824A Power dissipation: 306W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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PSMN3R9-60PSQ | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 130A Pulsed drain current: 705A Power dissipation: 263W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.94mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement |
на замовлення 66 шт: термін постачання 14-30 дні (днів) |
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PSMN2R0-30PL,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 211W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 40 шт: термін постачання 14-30 дні (днів) |
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PSMN7R0-30YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 245A Power dissipation: 48W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1390 шт: термін постачання 14-30 дні (днів) |
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PSMN012-100YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 130W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 35.8mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1369 шт: термін постачання 14-30 дні (днів) |
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PSMN017-30PL,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Pulsed drain current: 152A Power dissipation: 45W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 5.1nC Kind of package: tube Kind of channel: enhancement |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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PSMN8R0-40PS,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 309A Power dissipation: 86W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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PSMN1R1-30PL,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Pulsed drain current: 1609A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 243nC Kind of package: tube Kind of channel: enhancement |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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PSMN7R0-60YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 63A Power dissipation: 117W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 14.7mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1422 шт: термін постачання 14-30 дні (днів) |
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| PSMN1R8-80SSFJ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 222nC On-state resistance: 4.1mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 341W Pulsed drain current: 1158A Drain current: 205A Case: LFPAK88; SOT1235 Kind of channel: enhancement Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PSMN1R2-25YLDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A Technology: NextPowerS3 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 60.3nC On-state resistance: 2.87mΩ Gate-source voltage: ±20V Drain-source voltage: 25V Power dissipation: 172W Pulsed drain current: 1163A Drain current: 205A Case: LFPAK56; PowerSO8; SOT669 Kind of channel: enhancement Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74LV4060PW,112 | NEXPERIA |
Category: Counters/dividersDescription: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: 14bit; binary counter Mounting: SMD Case: TSSOP16 Family: LV Kind of package: tube Operating temperature: -40...125°C Supply voltage: 1...5.5V DC Technology: TTL |
на замовлення 232 шт: термін постачання 14-30 дні (днів) |
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74LV4060DB,112 | NEXPERIA |
Category: Counters/dividersDescription: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: 14bit; binary counter Mounting: SMD Case: SSOP16 Family: LV Kind of package: tube Operating temperature: -40...125°C Supply voltage: 1...5.5V DC Technology: TTL |
на замовлення 141 шт: термін постачання 14-30 дні (днів) |
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PUMH17,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 47kΩ Base-emitter resistor: 22kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PUMH13,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
на замовлення 17804 шт: термін постачання 14-30 дні (днів) |
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PUMH10,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
на замовлення 1449 шт: термін постачання 14-30 дні (днів) |
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PUMH1,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 22kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
на замовлення 21658 шт: термін постачання 14-30 дні (днів) |
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PUMH15,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
на замовлення 2711 шт: термін постачання 14-30 дні (днів) |
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PUMH18,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ |
на замовлення 595 шт: термін постачання 14-30 дні (днів) |
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PUMH19,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; 22kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 22kΩ |
на замовлення 5533 шт: термін постачання 14-30 дні (днів) |
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PUMH10-QX | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 100 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PUMH1-QX | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ Frequency: 230MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PUMH10,125 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 300mW; SC88,SOT363,TSSOP6 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PUMH10Z | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 230MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PUMH15-QX | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 4.7kΩ Frequency: 230MHz |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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PUMH16,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PMST5551,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.3A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 250 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 2492 шт: термін постачання 14-30 дні (днів) |
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BAS16H,115 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74HCT4046AD,118 | NEXPERIA |
Category: Other logic integrated circuitsDescription: IC: digital; phase-locked loop; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16 Kind of package: reel; tape Mounting: SMD Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital Operating temperature: -40...125°C Technology: CMOS; TTL Case: SO16 Family: HCT Kind of integrated circuit: phase-locked loop |
на замовлення 409 шт: термін постачання 14-30 дні (днів) |
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PBSS8110Z,135 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; SC73,SOT223 Mounting: SMD Frequency: 100MHz Collector current: 1A Collector-emitter voltage: 100V Polarisation: bipolar Type of transistor: NPN Current gain: 80...500 Kind of package: reel; tape Case: SC73; SOT223 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PBSS8110X,135 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; SC62,SOT89 Mounting: SMD Frequency: 100MHz Collector current: 1A Collector-emitter voltage: 100V Polarisation: bipolar Type of transistor: NPN Current gain: 80...500 Kind of package: reel; tape Case: SC62; SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PBSS8110T-QR | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB Mounting: SMD Frequency: 100MHz Collector current: 1A Collector-emitter voltage: 100V Power dissipation: 0.48W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Kind of package: 7 inch reel; tape Case: SOT23; TO236AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PBSS8110Y,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 625mW; SC88,SOT363,TSSOP6 Mounting: SMD Frequency: 100MHz Collector current: 1A Collector-emitter voltage: 100V Power dissipation: 0.625W Polarisation: bipolar Type of transistor: NPN Current gain: 80...500 Kind of package: reel; tape Case: SC88; SOT363; TSSOP6 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
| PBSS5580PA,115 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 4A; DFN2020-3,SOT1061 Mounting: SMD Frequency: 110MHz Collector current: 4A Collector-emitter voltage: 80V Polarisation: bipolar Type of transistor: PNP Current gain: 70...265 Kind of package: reel; tape Case: DFN2020-3; SOT1061 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC1G08GM,132 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Family: LVC Delay time: 10.5ns Manufacturer series: Mini Logic |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC1G08GN,132 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC Manufacturer series: Mini Logic |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC1G08GS,132 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 4µA Family: LVC Delay time: 10.5ns Manufacturer series: Mini Logic |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||||
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HEF4027BT,653 | NEXPERIA |
Category: Flip-FlopsDescription: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; SMD; SO16; HEF4000B Operating temperature: -40...85°C Type of integrated circuit: digital Technology: CMOS Trigger: negative-edge-triggered Quiescent current: 120µA Number of inputs: 5 Kind of package: reel; tape Case: SO16 Family: HEF4000B Kind of integrated circuit: JK flip-flop Number of channels: 2 Mounting: SMD Supply voltage: 3...15V DC |
на замовлення 2558 шт: термін постачання 14-30 дні (днів) |
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BAS116H,115 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 215mA; 3us; SOD123F; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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BAS116,215 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 215mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BAS116GWX | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 215mA; 3us; SOD123; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.215A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOD123 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 80nA Kind of package: reel; tape Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BAS116LYL | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 325mA; 3us; DFN1006-2,SOD882; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 325mA Reverse recovery time: 3µs Semiconductor structure: single diode Case: DFN1006-2; SOD882 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PMBT3906,215 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 250MHz |
на замовлення 4856 шт: термін постачання 14-30 дні (днів) |
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PMSS3906,115 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.1A; 200mW; SC70,SOT323 Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Collector current: 0.1A Power dissipation: 0.2W Current gain: 30...300 Collector-emitter voltage: 40V Polarisation: bipolar |
на замовлення 2858 шт: термін постачання 14-30 дні (днів) |
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PMEG6020ER,115 | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Case: CFP3; SOD123W Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.53V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 140865 шт: термін постачання 14-30 дні (днів) |
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PMEG6030EP,115 | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: CFP5; SOD128 Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.53V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 35300 шт: термін постачання 14-30 дні (днів) |
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PMEG10010ELRX | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 100V; 1.4A; 3.7ns Type of diode: Schottky rectifying Case: CFP3; SOD123W Mounting: SMD Max. off-state voltage: 0.1kV Load current: 1.4A Semiconductor structure: single diode Capacitance: 28pF Max. forward voltage: 0.68V Leakage current: 0.5mA Max. forward impulse current: 50A Reverse recovery time: 3.7ns Kind of package: reel; tape |
на замовлення 177343 шт: термін постачання 14-30 дні (днів) |
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NX2301P,215 | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2A; 400mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 0.4W Case: SOT23; TO236AB Gate-source voltage: ±8V On-state resistance: 0.27Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 6nC |
на замовлення 1990 шт: термін постачання 14-30 дні (днів) |
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BZV49-C3V9,115 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 3.9V; SMD; SOT89; Ifmax: 250mA; single diode Case: SOT89 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Max. load current: 0.25A Semiconductor structure: single diode Zener voltage: 3.9V Type of diode: Zener Max. forward voltage: 1V Power dissipation: 1W |
на замовлення 998 шт: термін постачання 14-30 дні (днів) |
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BZX884-B3V9,315 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 3.9V; SMD; DFN1006-2,SOD882; reel,tape Case: DFN1006-2; SOD882 Mounting: SMD Power dissipation: 0.25W Max. forward voltage: 0.9V Tolerance: ±2% Zener voltage: 3.9V Kind of package: reel; tape Type of diode: Zener Max. load current: 0.2A Semiconductor structure: single diode |
на замовлення 4680 шт: термін постачання 14-30 дні (днів) |
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PDTC115EU,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 100kΩ Base-emitter resistor: 100kΩ Frequency: 230MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PDTC114YT,215 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.25W Current gain: 100 Frequency: 230MHz |
на замовлення 5790 шт: термін постачання 14-30 дні (днів) |
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PDTC114TT,235 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 200 Mounting: SMD Kind of package: 11 inch reel; tape Base resistor: 10kΩ Frequency: 230MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PDTC123EU,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PDTC114YU-QX | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC70,SOT323; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Application: automotive industry Frequency: 230MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PDTC114YT-QR | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 230MHz Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
PDTC115TT,215 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 100 Base resistor: 100kΩ Case: SOT23; TO236AB Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| PSMN038-100YLX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 589 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.43 грн |
| 10+ | 44.62 грн |
| 25+ | 40.38 грн |
| 100+ | 37.39 грн |
| 250+ | 35.65 грн |
| 500+ | 31.99 грн |
| PSMN4R6-60BS,118 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 671 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 182.56 грн |
| 10+ | 127.14 грн |
| 25+ | 114.67 грн |
| 100+ | 106.36 грн |
| 250+ | 101.38 грн |
| 500+ | 91.41 грн |
| PSMN2R0-30YLE,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1314 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 103.81 грн |
| 10+ | 87.25 грн |
| 25+ | 80.60 грн |
| 100+ | 76.45 грн |
| 250+ | 69.80 грн |
| 500+ | 68.14 грн |
| PSMN3R0-60PS,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 824A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 824A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.94 грн |
| 3+ | 234.33 грн |
| 10+ | 229.35 грн |
| PSMN3R9-60PSQ |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 66 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 174.50 грн |
| 10+ | 163.70 грн |
| PSMN2R0-30PL,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.08 грн |
| 10+ | 131.29 грн |
| PSMN7R0-30YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1390 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.80 грн |
| 10+ | 43.46 грн |
| 100+ | 27.42 грн |
| 250+ | 26.59 грн |
| PSMN012-100YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1369 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 141.39 грн |
| 10+ | 97.22 грн |
| 25+ | 81.43 грн |
| 100+ | 73.12 грн |
| 250+ | 68.14 грн |
| 500+ | 64.82 грн |
| 1000+ | 58.17 грн |
| PSMN017-30PL,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 72.29 грн |
| PSMN8R0-40PS,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 67 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.22 грн |
| 10+ | 58.17 грн |
| PSMN1R1-30PL,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 324.84 грн |
| 3+ | 272.56 грн |
| 10+ | 265.91 грн |
| PSMN7R0-60YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1422 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 136.92 грн |
| 10+ | 94.73 грн |
| 25+ | 85.59 грн |
| 100+ | 79.77 грн |
| 250+ | 76.45 грн |
| 500+ | 68.14 грн |
| 1000+ | 64.82 грн |
| PSMN1R8-80SSFJ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 222nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 341W
Pulsed drain current: 1158A
Drain current: 205A
Case: LFPAK88; SOT1235
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 222nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 341W
Pulsed drain current: 1158A
Drain current: 205A
Case: LFPAK88; SOT1235
Kind of channel: enhancement
Mounting: SMD
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В кошику
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| PSMN1R2-25YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A
Technology: NextPowerS3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60.3nC
On-state resistance: 2.87mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 172W
Pulsed drain current: 1163A
Drain current: 205A
Case: LFPAK56; PowerSO8; SOT669
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A
Technology: NextPowerS3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60.3nC
On-state resistance: 2.87mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 172W
Pulsed drain current: 1163A
Drain current: 205A
Case: LFPAK56; PowerSO8; SOT669
Kind of channel: enhancement
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| 74LV4060PW,112 |
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Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter
Mounting: SMD
Case: TSSOP16
Family: LV
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Technology: TTL
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter
Mounting: SMD
Case: TSSOP16
Family: LV
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Technology: TTL
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.69 грн |
| 14+ | 30.41 грн |
| 25+ | 28.17 грн |
| 96+ | 26.84 грн |
| 192+ | 24.10 грн |
| 74LV4060DB,112 |
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Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter
Mounting: SMD
Case: SSOP16
Family: LV
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Technology: TTL
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter
Mounting: SMD
Case: SSOP16
Family: LV
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Technology: TTL
на замовлення 141 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.59 грн |
| 16+ | 26.59 грн |
| 18+ | 24.10 грн |
| PUMH17,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
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В кошику
од. на суму грн.
| PUMH13,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 17804 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 80+ | 5.24 грн |
| 93+ | 4.49 грн |
| 119+ | 3.51 грн |
| 250+ | 2.63 грн |
| 500+ | 2.34 грн |
| 1000+ | 2.19 грн |
| 3000+ | 2.04 грн |
| 6000+ | 1.91 грн |
| PUMH10,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 1449 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.95 грн |
| 69+ | 6.07 грн |
| 84+ | 4.99 грн |
| 98+ | 4.27 грн |
| 114+ | 3.66 грн |
| 250+ | 3.02 грн |
| 500+ | 2.67 грн |
| 1000+ | 2.51 грн |
| PUMH1,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 21658 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.95 грн |
| 67+ | 6.23 грн |
| 81+ | 5.15 грн |
| 94+ | 4.42 грн |
| 110+ | 3.78 грн |
| 250+ | 3.11 грн |
| 500+ | 2.73 грн |
| 1000+ | 2.56 грн |
| 3000+ | 2.26 грн |
| PUMH15,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
на замовлення 2711 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.74 грн |
| 76+ | 5.48 грн |
| 127+ | 3.29 грн |
| 161+ | 2.58 грн |
| 250+ | 2.33 грн |
| 500+ | 2.15 грн |
| 1000+ | 2.05 грн |
| PUMH18,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
на замовлення 595 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.74 грн |
| 60+ | 6.98 грн |
| 102+ | 4.09 грн |
| 119+ | 3.51 грн |
| 250+ | 2.63 грн |
| 500+ | 2.34 грн |
| PUMH19,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
на замовлення 5533 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.47 грн |
| 122+ | 3.41 грн |
| 163+ | 2.56 грн |
| 179+ | 2.33 грн |
| 250+ | 2.15 грн |
| 500+ | 2.05 грн |
| 1000+ | 1.84 грн |
| 3000+ | 1.81 грн |
| PUMH10-QX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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В кошику
од. на суму грн.
| PUMH1-QX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Frequency: 230MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Frequency: 230MHz
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В кошику
од. на суму грн.
| PUMH10,125 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
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| PUMH10Z |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 230MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 230MHz
товару немає в наявності
В кошику
од. на суму грн.
| PUMH15-QX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 4.7kΩ
Frequency: 230MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 4.7kΩ
Frequency: 230MHz
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| PUMH16,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
| PMST5551,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 2492 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.74 грн |
| 49+ | 8.56 грн |
| 56+ | 7.55 грн |
| 100+ | 6.37 грн |
| 250+ | 4.75 грн |
| 500+ | 4.31 грн |
| 1000+ | 3.95 грн |
| BAS16H,115 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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| 74HCT4046AD,118 |
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Виробник: NEXPERIA
Category: Other logic integrated circuits
Description: IC: digital; phase-locked loop; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Operating temperature: -40...125°C
Technology: CMOS; TTL
Case: SO16
Family: HCT
Kind of integrated circuit: phase-locked loop
Category: Other logic integrated circuits
Description: IC: digital; phase-locked loop; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Operating temperature: -40...125°C
Technology: CMOS; TTL
Case: SO16
Family: HCT
Kind of integrated circuit: phase-locked loop
на замовлення 409 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 82.33 грн |
| 10+ | 58.17 грн |
| 100+ | 51.52 грн |
| PBSS8110Z,135 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; SC73,SOT223
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Polarisation: bipolar
Type of transistor: NPN
Current gain: 80...500
Kind of package: reel; tape
Case: SC73; SOT223
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; SC73,SOT223
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Polarisation: bipolar
Type of transistor: NPN
Current gain: 80...500
Kind of package: reel; tape
Case: SC73; SOT223
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| PBSS8110X,135 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; SC62,SOT89
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Polarisation: bipolar
Type of transistor: NPN
Current gain: 80...500
Kind of package: reel; tape
Case: SC62; SOT89
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; SC62,SOT89
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Polarisation: bipolar
Type of transistor: NPN
Current gain: 80...500
Kind of package: reel; tape
Case: SC62; SOT89
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| PBSS8110T-QR |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Power dissipation: 0.48W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Kind of package: 7 inch reel; tape
Case: SOT23; TO236AB
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Power dissipation: 0.48W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Kind of package: 7 inch reel; tape
Case: SOT23; TO236AB
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| PBSS8110Y,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 625mW; SC88,SOT363,TSSOP6
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Power dissipation: 0.625W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 80...500
Kind of package: reel; tape
Case: SC88; SOT363; TSSOP6
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 625mW; SC88,SOT363,TSSOP6
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Power dissipation: 0.625W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 80...500
Kind of package: reel; tape
Case: SC88; SOT363; TSSOP6
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Мінімальне замовлення: 3000 шт
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| PBSS5580PA,115 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 4A; DFN2020-3,SOT1061
Mounting: SMD
Frequency: 110MHz
Collector current: 4A
Collector-emitter voltage: 80V
Polarisation: bipolar
Type of transistor: PNP
Current gain: 70...265
Kind of package: reel; tape
Case: DFN2020-3; SOT1061
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 4A; DFN2020-3,SOT1061
Mounting: SMD
Frequency: 110MHz
Collector current: 4A
Collector-emitter voltage: 80V
Polarisation: bipolar
Type of transistor: PNP
Current gain: 70...265
Kind of package: reel; tape
Case: DFN2020-3; SOT1061
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| 74LVC1G08GM,132 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Delay time: 10.5ns
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Delay time: 10.5ns
Manufacturer series: Mini Logic
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Мінімальне замовлення: 5000 шт
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| 74LVC1G08GN,132 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
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Мінімальне замовлення: 10000 шт
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| 74LVC1G08GS,132 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Delay time: 10.5ns
Manufacturer series: Mini Logic
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Delay time: 10.5ns
Manufacturer series: Mini Logic
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Мінімальне замовлення: 5000 шт
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| HEF4027BT,653 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; SMD; SO16; HEF4000B
Operating temperature: -40...85°C
Type of integrated circuit: digital
Technology: CMOS
Trigger: negative-edge-triggered
Quiescent current: 120µA
Number of inputs: 5
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Supply voltage: 3...15V DC
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; SMD; SO16; HEF4000B
Operating temperature: -40...85°C
Type of integrated circuit: digital
Technology: CMOS
Trigger: negative-edge-triggered
Quiescent current: 120µA
Number of inputs: 5
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Supply voltage: 3...15V DC
на замовлення 2558 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.95 грн |
| 14+ | 31.33 грн |
| 100+ | 21.11 грн |
| BAS116H,115 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 215mA; 3us; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 215mA; 3us; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.45 грн |
| BAS116,215 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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| BAS116GWX |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 80nA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 80nA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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| BAS116LYL |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 325mA; 3us; DFN1006-2,SOD882; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 325mA
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: DFN1006-2; SOD882
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 325mA; 3us; DFN1006-2,SOD882; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 325mA
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: DFN1006-2; SOD882
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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| PMBT3906,215 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 250MHz
на замовлення 4856 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.26 грн |
| 97+ | 4.32 грн |
| 109+ | 3.82 грн |
| PMSS3906,115 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 30...300
Collector-emitter voltage: 40V
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 30...300
Collector-emitter voltage: 40V
Polarisation: bipolar
на замовлення 2858 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.42 грн |
| 63+ | 6.65 грн |
| 97+ | 4.32 грн |
| 124+ | 3.37 грн |
| 250+ | 3.07 грн |
| 500+ | 2.85 грн |
| 1000+ | 2.71 грн |
| PMEG6020ER,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 140865 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.16 грн |
| 23+ | 18.70 грн |
| 27+ | 15.71 грн |
| 100+ | 10.47 грн |
| 250+ | 7.81 грн |
| 500+ | 7.06 грн |
| 1000+ | 6.56 грн |
| 3000+ | 6.32 грн |
| PMEG6030EP,115 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 35300 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.11 грн |
| 18+ | 23.18 грн |
| 25+ | 19.44 грн |
| 100+ | 15.12 грн |
| 500+ | 11.80 грн |
| 1000+ | 11.30 грн |
| PMEG10010ELRX |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 100V; 1.4A; 3.7ns
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1.4A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward voltage: 0.68V
Leakage current: 0.5mA
Max. forward impulse current: 50A
Reverse recovery time: 3.7ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 100V; 1.4A; 3.7ns
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1.4A
Semiconductor structure: single diode
Capacitance: 28pF
Max. forward voltage: 0.68V
Leakage current: 0.5mA
Max. forward impulse current: 50A
Reverse recovery time: 3.7ns
Kind of package: reel; tape
на замовлення 177343 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.11 грн |
| 39+ | 10.72 грн |
| 100+ | 7.81 грн |
| 500+ | 6.81 грн |
| 1000+ | 6.07 грн |
| 3000+ | 5.24 грн |
| 6000+ | 5.07 грн |
| NX2301P,215 |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 400mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 400mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
на замовлення 1990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.32 грн |
| 43+ | 9.81 грн |
| 57+ | 7.41 грн |
| 100+ | 6.76 грн |
| 500+ | 5.63 грн |
| 1000+ | 4.94 грн |
| BZV49-C3V9,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; SOT89; Ifmax: 250mA; single diode
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Max. load current: 0.25A
Semiconductor structure: single diode
Zener voltage: 3.9V
Type of diode: Zener
Max. forward voltage: 1V
Power dissipation: 1W
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; SOT89; Ifmax: 250mA; single diode
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Max. load current: 0.25A
Semiconductor structure: single diode
Zener voltage: 3.9V
Type of diode: Zener
Max. forward voltage: 1V
Power dissipation: 1W
на замовлення 998 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.54 грн |
| 11+ | 39.72 грн |
| 100+ | 31.33 грн |
| BZX884-B3V9,315 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.9V; SMD; DFN1006-2,SOD882; reel,tape
Case: DFN1006-2; SOD882
Mounting: SMD
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±2%
Zener voltage: 3.9V
Kind of package: reel; tape
Type of diode: Zener
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.9V; SMD; DFN1006-2,SOD882; reel,tape
Case: DFN1006-2; SOD882
Mounting: SMD
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±2%
Zener voltage: 3.9V
Kind of package: reel; tape
Type of diode: Zener
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 4680 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.63 грн |
| 50+ | 8.48 грн |
| 58+ | 7.23 грн |
| PDTC115EU,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Frequency: 230MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Frequency: 230MHz
товару немає в наявності
В кошику
од. на суму грн.
| PDTC114YT,215 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.25W
Current gain: 100
Frequency: 230MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.25W
Current gain: 100
Frequency: 230MHz
на замовлення 5790 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 8.95 грн |
| 60+ | 6.98 грн |
| 100+ | 5.15 грн |
| PDTC114TT,235 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 200
Mounting: SMD
Kind of package: 11 inch reel; tape
Base resistor: 10kΩ
Frequency: 230MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 200
Mounting: SMD
Kind of package: 11 inch reel; tape
Base resistor: 10kΩ
Frequency: 230MHz
товару немає в наявності
В кошику
од. на суму грн.
| PDTC123EU,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
товару немає в наявності
В кошику
од. на суму грн.
| PDTC114YU-QX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC70,SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Frequency: 230MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC70,SOT323; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Frequency: 230MHz
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В кошику
од. на суму грн.
| PDTC114YT-QR |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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од. на суму грн.
| PDTC115TT,215 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 100
Base resistor: 100kΩ
Case: SOT23; TO236AB
Kind of package: 7 inch reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 100
Base resistor: 100kΩ
Case: SOT23; TO236AB
Kind of package: 7 inch reel; tape
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од. на суму грн.




























