| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| LC898217XH-MH | onsemi |
Description: IC MOTOR DVR AF CTLRPackaging: Bulk Package / Case: 10-XFBGA, WLCSP Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Interface: Parallel Operating Temperature: -30°C ~ 70°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 2.6V ~ 3.3V Applications: Image Stabilization Technology: CMOS Voltage - Load: 2.6V ~ 3.3V Supplier Device Package: 10-WLCSP (1.04x2.04) Motor Type - AC, DC: Brushed DC |
на замовлення 257778 шт: термін постачання 21-31 дні (днів) |
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NLSX3014MUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 12UQFNFeatures: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 12-UFQFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 100Mbps Supplier Device Package: 12-UQFN (1.7x2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 1.3 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NLSX3014MUTAG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 12UQFNFeatures: Auto-Direction Sensing Packaging: Cut Tape (CT) Package / Case: 12-UFQFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 100Mbps Supplier Device Package: 12-UQFN (1.7x2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 1.3 V ~ 4.5 V Number of Circuits: 1 |
на замовлення 7330 шт: термін постачання 21-31 дні (днів) |
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MMBD101LT1 | onsemi |
Description: DIODE SCHOTTKY 225MW 7V SOT23Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CAT28C64BH1312 | onsemi |
Description: IC EEPROM 64KBIT PARALLEL 28TSOPPackaging: Bulk Package / Case: 28-TSSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 28-TSOP Write Cycle Time - Word, Page: 5ms Memory Interface: Parallel Access Time: 120 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 191 шт: термін постачання 21-31 дні (днів) |
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| 1N4749ATA | onsemi |
Description: 1N47ZENDIOD2451W Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N4749ARL | onsemi |
Description: 1N47ZENDIOD2451W Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SZP40192RL | onsemi |
Description: IC REG LINEAR 5W SPCL SUR40 TR Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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EMI8042MUTAG | onsemi |
Description: CMC 100MA 4LN SMD ESDFeatures: TVS Diode ESD Protection Packaging: Tape & Reel (TR) Package / Case: 10-XFDFN Filter Type: Signal Line Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm) Mounting Type: Surface Mount Number of Lines: 4 Operating Temperature: -40°C ~ 85°C Height (Max): 0.020" (0.50mm) Current Rating (Max): 100mA DC Resistance (DCR) (Max): 6Ohm (Typ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EMI8042MUTAG | onsemi |
Description: CMC 100MA 4LN SMD ESDFeatures: TVS Diode ESD Protection Packaging: Cut Tape (CT) Package / Case: 10-XFDFN Filter Type: Signal Line Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm) Mounting Type: Surface Mount Number of Lines: 4 Operating Temperature: -40°C ~ 85°C Height (Max): 0.020" (0.50mm) Current Rating (Max): 100mA DC Resistance (DCR) (Max): 6Ohm (Typ) |
на замовлення 2531 шт: термін постачання 21-31 дні (днів) |
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SM1MA151WKT1G | onsemi |
Description: DIODE ARRAY GP 40V 100MA SC59Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-59 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 75 V Qualification: AEC-Q101 |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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SM1MA151WKT1G | onsemi |
Description: DIODE ARRAY GP 40V 100MA SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SC-59 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 75 V Qualification: AEC-Q101 |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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| FFL74LVC00ADR2G | onsemi |
Description: IC REG LINEAR Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCFG60T65SQF | onsemi |
Description: IGBT FIELD STOP 650V WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Supplier Device Package: Wafer IGBT Type: Field Stop Gate Charge: 79 nC Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MCR68-002 | onsemi |
Description: SCR 50V 12A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz Current - On State (It (AV)) (Max): 8 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 2.2 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMB39AT3 | onsemi |
Description: TVS ZENER UNIDIR 600W 39V SMBPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 74LVC373AMNTWG | onsemi |
Description: IC TRANSPARENT LATCH OCT DFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SPBAT54XV2T5G | onsemi |
Description: IC Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP1566TELECGEVB | onsemi |
Description: NCP1566 1/4 BRICK TELECOMPackaging: Bulk Voltage - Output: 3.3V Voltage - Input: 36V ~ 72V Current - Output: 30A Board Type: Fully Populated Utilized IC / Part: NCP1566 Supplied Contents: Board(s) Main Purpose: DC/DC Converter Outputs and Type: 1, Isolated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1N5388BRL | onsemi |
Description: DIODE ZENER 200V 5W AXIALPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRM140T3 | onsemi |
Description: DIODE SCHOTTKY 40V 1A POWERMITEPackaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HUF75852G3 | onsemi |
Description: MOSFET N-CH 150V 75A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 75A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 25 V |
на замовлення 807 шт: термін постачання 21-31 дні (днів) |
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HUF75852G3 | onsemi |
Description: MOSFET N-CH 150V 75A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 75A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLV14015BDR2G | onsemi |
Description: IC SR PUSH-PULL 4BIT 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Supplier Device Package: 16-SOIC Grade: Automotive Number of Bits per Element: 4 Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NLV14015BDR2G | onsemi |
Description: IC SR PUSH-PULL 4BIT 16-SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 2 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Supplier Device Package: 16-SOIC Grade: Automotive Number of Bits per Element: 4 Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FSEZ1317NY | onsemi |
Description: IC PWM CTLR PRIMARY REG 7-DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Frequency - Switching: 47kHz ~ 53kHz Voltage - Breakdown: 700V Output Isolation: Isolated Voltage - Supply (Vcc/Vdd): 5V ~ 23V Supplier Device Package: 7-DIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KA5L0565RYDTU | onsemi |
Description: IC OFFLINE SW MULT TOP TO220FPackaging: Tube Package / Case: TO-220-4 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) Duty Cycle: 77% Frequency - Switching: 50kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Topology: Flyback, Forward Voltage - Supply (Vcc/Vdd): 9V ~ 30V Supplier Device Package: TO-220F-4L (Forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA123JET1 | onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBF4119 | onsemi |
Description: JFET N-CH 40V SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Power - Max: 225 mW Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBF4119 | onsemi |
Description: JFET N-CH 40V SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23-3 Power - Max: 225 mW Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KSC2073H2TSTU | onsemi |
Description: TRANS NPN 150V 1.5A TO-220-3Packaging: Tube Package / Case: TO-220-3 Cropped Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 25 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NB3N2304NZDTR2G | onsemi |
Description: IC CLK BUFFER 1:4 140MHZ 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS, LVTTL Type: Fanout Buffer (Distribution) Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP Frequency - Max: 140 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PCFG50T60RNW | onsemi |
Description: MOSFET Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FCPF20N60T | onsemi |
Description: MOSFET N-CH 600V 20A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GF1B | onsemi |
Description: DIODE STANDARD 100V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 13800 шт: термін постачання 21-31 дні (днів) |
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GF1B | onsemi |
Description: DIODE STANDARD 100V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 14112 шт: термін постачання 21-31 дні (днів) |
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NCV5702DR2G | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 9.2ns, 7.9ns Channel Type: Synchronous Driven Configuration: High-Side or Low-Side Number of Drivers: 1 Gate Type: IGBT Logic Voltage - VIL, VIH: 0.75V, 4.3V Current - Peak Output (Source, Sink): 7.8A, 6.8A DigiKey Programmable: Not Verified |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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NCV5702DR2G | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 9.2ns, 7.9ns Channel Type: Synchronous Driven Configuration: High-Side or Low-Side Number of Drivers: 1 Gate Type: IGBT Logic Voltage - VIL, VIH: 0.75V, 4.3V Current - Peak Output (Source, Sink): 7.8A, 6.8A DigiKey Programmable: Not Verified |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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| FDMF5808A | onsemi |
Description: IC HALF BRIDGE DRIVER QFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDMC7200 | onsemi |
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDMC7200 | onsemi |
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW, 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ESDL3141MXT5G | onsemi |
Description: ASYMMETRIC LOW CAP SURGE PROTECTPackaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 1.4pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A, 16.5A Voltage - Reverse Standoff (Typ): 14V (Max), 5V (Max) Supplier Device Package: 2-X2DFN (1x0.6) Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.1V, 5.5V Voltage - Clamping (Max) @ Ipp: 21.5V, 14V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV8535MN250R2G | onsemi |
Description: IC REG LINEAR 2.5V 500MA 10DFNPackaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 190 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Grade: Automotive Voltage Dropout (Max): 0.34V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 14 mA Qualification: AEC-Q100 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NCV8535MN250R2G | onsemi |
Description: IC REG LINEAR 2.5V 500MA 10DFNPackaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 190 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Grade: Automotive Voltage Dropout (Max): 0.34V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 14 mA Qualification: AEC-Q100 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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| MAX4372FEUK | onsemi |
Description: MAX43LOW-COSUCSMICROPOWEHIGH-SIC Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NCV2561SQT1G | onsemi |
Description: IC VIDEO AMP 1CH SC-88-6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Function: Driver Voltage - Supply: 3.3V ~ 2.7V Applications: Consumer Video Standards: NTSC, PAL Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Control Interface: Analog Voltage Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV2561SQT1G | onsemi |
Description: IC VIDEO AMP 1CH SC-88-6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Function: Driver Voltage - Supply: 3.3V ~ 2.7V Applications: Consumer Video Standards: NTSC, PAL Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Control Interface: Analog Voltage Qualification: AEC-Q100 |
на замовлення 2699 шт: термін постачання 21-31 дні (днів) |
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| LMC6482AIM/NAK2 | onsemi |
Description: LMC6482ACMAMP Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LC87F0808AUQFPTLM-H | onsemi |
Description: IC MCU 8BIT 8KB FLASH 36QFPPackaging: Tape & Reel (TR) Package / Case: 36-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Data Converters: A/D 10x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V Connectivity: SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 36-QFP (7x7) Number of I/O: 28 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NLV74VHC00DTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
на замовлення 9700 шт: термін постачання 21-31 дні (днів) |
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NLV74VHC00DTR2G | onsemi |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 2 µA Qualification: AEC-Q100 |
на замовлення 9818 шт: термін постачання 21-31 дні (днів) |
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NTMTS002N08MC | onsemi |
Description: PTNG 80V IN CEBU PQFN88Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Power Dissipation (Max): 3.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 540µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NTMTS002N08MC | onsemi |
Description: PTNG 80V IN CEBU PQFN88Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V Power Dissipation (Max): 3.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 540µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V |
на замовлення 23900 шт: термін постачання 21-31 дні (днів) |
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NTBLS002N08MC | onsemi |
Description: MOSFET N-CH 80V 28A/238A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NTBLS002N08MC | onsemi |
Description: MOSFET N-CH 80V 28A/238A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVMYS1D6N04CLTWG | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMYS1D6N04CLTWG | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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NVMYS1D6N04CLT1G | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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NVMYS1D6N04CLT1G | onsemi |
Description: T6 40V LL AIZU SINGLE NCH LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 17875 шт: термін постачання 21-31 дні (днів) |
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NVMYS4D6N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 21A/78A LFPAK4Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| LC898217XH-MH |
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Виробник: onsemi
Description: IC MOTOR DVR AF CTLR
Packaging: Bulk
Package / Case: 10-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -30°C ~ 70°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.6V ~ 3.3V
Applications: Image Stabilization
Technology: CMOS
Voltage - Load: 2.6V ~ 3.3V
Supplier Device Package: 10-WLCSP (1.04x2.04)
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DVR AF CTLR
Packaging: Bulk
Package / Case: 10-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Interface: Parallel
Operating Temperature: -30°C ~ 70°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.6V ~ 3.3V
Applications: Image Stabilization
Technology: CMOS
Voltage - Load: 2.6V ~ 3.3V
Supplier Device Package: 10-WLCSP (1.04x2.04)
Motor Type - AC, DC: Brushed DC
на замовлення 257778 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 619+ | 37.99 грн |
| NLSX3014MUTAG |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 12UQFN
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 12UQFN
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 73.86 грн |
| NLSX3014MUTAG |
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Виробник: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 12UQFN
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 12UQFN
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
на замовлення 7330 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.95 грн |
| 10+ | 148.89 грн |
| 25+ | 126.84 грн |
| 100+ | 95.60 грн |
| 250+ | 84.10 грн |
| 500+ | 77.03 грн |
| 1000+ | 69.94 грн |
| CAT28C64BH1312 |
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Виробник: onsemi
Description: IC EEPROM 64KBIT PARALLEL 28TSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-TSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT PARALLEL 28TSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-TSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 191 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 67+ | 313.58 грн |
| EMI8042MUTAG |
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Виробник: onsemi
Description: CMC 100MA 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
Description: CMC 100MA 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
товару немає в наявності
В кошику
од. на суму грн.
| EMI8042MUTAG |
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Виробник: onsemi
Description: CMC 100MA 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 10-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
Description: CMC 100MA 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 10-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
на замовлення 2531 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.68 грн |
| 10+ | 68.25 грн |
| 25+ | 57.08 грн |
| 100+ | 41.65 грн |
| 250+ | 35.79 грн |
| 500+ | 32.19 грн |
| 1000+ | 28.69 грн |
| SM1MA151WKT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 40V 100MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 40V 100MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Qualification: AEC-Q101
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.98 грн |
| 6000+ | 2.66 грн |
| 9000+ | 2.21 грн |
| 30000+ | 2.03 грн |
| SM1MA151WKT1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 40V 100MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Qualification: AEC-Q101
Description: DIODE ARRAY GP 40V 100MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Qualification: AEC-Q101
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.92 грн |
| 27+ | 11.69 грн |
| 100+ | 5.71 грн |
| 500+ | 4.47 грн |
| 1000+ | 3.11 грн |
| PCFG60T65SQF |
Виробник: onsemi
Description: IGBT FIELD STOP 650V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: Wafer
IGBT Type: Field Stop
Gate Charge: 79 nC
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Description: IGBT FIELD STOP 650V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: Wafer
IGBT Type: Field Stop
Gate Charge: 79 nC
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
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| MCR68-002 |
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Виробник: onsemi
Description: SCR 50V 12A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 50 V
Description: SCR 50V 12A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 50 V
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| NCP1566TELECGEVB |
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Виробник: onsemi
Description: NCP1566 1/4 BRICK TELECOM
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 36V ~ 72V
Current - Output: 30A
Board Type: Fully Populated
Utilized IC / Part: NCP1566
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
Description: NCP1566 1/4 BRICK TELECOM
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 36V ~ 72V
Current - Output: 30A
Board Type: Fully Populated
Utilized IC / Part: NCP1566
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1, Isolated
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| MBRM140T3 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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| HUF75852G3 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 75A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 75A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 25 V
Description: MOSFET N-CH 150V 75A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 75A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 25 V
на замовлення 807 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 673.72 грн |
| HUF75852G3 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 75A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 25 V
Description: MOSFET N-CH 150V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 75A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7690 pF @ 25 V
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| NLV14015BDR2G |
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Виробник: onsemi
Description: IC SR PUSH-PULL 4BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Grade: Automotive
Number of Bits per Element: 4
Qualification: AEC-Q100
Description: IC SR PUSH-PULL 4BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Grade: Automotive
Number of Bits per Element: 4
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 18.03 грн |
| NLV14015BDR2G |
![]() |
Виробник: onsemi
Description: IC SR PUSH-PULL 4BIT 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Grade: Automotive
Number of Bits per Element: 4
Qualification: AEC-Q100
Description: IC SR PUSH-PULL 4BIT 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Grade: Automotive
Number of Bits per Element: 4
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.73 грн |
| 12+ | 27.30 грн |
| 25+ | 24.44 грн |
| 100+ | 19.98 грн |
| 250+ | 18.58 грн |
| 500+ | 17.73 грн |
| 1000+ | 17.00 грн |
| FSEZ1317NY |
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Виробник: onsemi
Description: IC PWM CTLR PRIMARY REG 7-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Frequency - Switching: 47kHz ~ 53kHz
Voltage - Breakdown: 700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 5V ~ 23V
Supplier Device Package: 7-DIP
Description: IC PWM CTLR PRIMARY REG 7-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Frequency - Switching: 47kHz ~ 53kHz
Voltage - Breakdown: 700V
Output Isolation: Isolated
Voltage - Supply (Vcc/Vdd): 5V ~ 23V
Supplier Device Package: 7-DIP
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| KA5L0565RYDTU |
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Виробник: onsemi
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Description: IC OFFLINE SW MULT TOP TO220F
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback, Forward
Voltage - Supply (Vcc/Vdd): 9V ~ 30V
Supplier Device Package: TO-220F-4L (Forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
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| DTA123JET1 |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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| MMBF4119 |
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Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
Description: JFET N-CH 40V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
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| MMBF4119 |
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Виробник: onsemi
Description: JFET N-CH 40V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
Description: JFET N-CH 40V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 10 V
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| KSC2073H2TSTU |
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Виробник: onsemi
Description: TRANS NPN 150V 1.5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3 Cropped Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 25 W
Description: TRANS NPN 150V 1.5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3 Cropped Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 25 W
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| NB3N2304NZDTR2G |
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Виробник: onsemi
Description: IC CLK BUFFER 1:4 140MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 140 MHz
Description: IC CLK BUFFER 1:4 140MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 140 MHz
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| FCPF20N60T |
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Виробник: onsemi
Description: MOSFET N-CH 600V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
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| GF1B |
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Виробник: onsemi
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 13800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7500+ | 7.48 грн |
| GF1B |
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Виробник: onsemi
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 14112 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.14 грн |
| 17+ | 19.22 грн |
| 100+ | 15.23 грн |
| 500+ | 10.78 грн |
| 1000+ | 9.01 грн |
| 2000+ | 8.69 грн |
| NCV5702DR2G |
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Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 9.2ns, 7.9ns
Channel Type: Synchronous
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.75V, 4.3V
Current - Peak Output (Source, Sink): 7.8A, 6.8A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 9.2ns, 7.9ns
Channel Type: Synchronous
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.75V, 4.3V
Current - Peak Output (Source, Sink): 7.8A, 6.8A
DigiKey Programmable: Not Verified
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 109.90 грн |
| 5000+ | 102.52 грн |
| NCV5702DR2G |
![]() |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 9.2ns, 7.9ns
Channel Type: Synchronous
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.75V, 4.3V
Current - Peak Output (Source, Sink): 7.8A, 6.8A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 9.2ns, 7.9ns
Channel Type: Synchronous
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.75V, 4.3V
Current - Peak Output (Source, Sink): 7.8A, 6.8A
DigiKey Programmable: Not Verified
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.29 грн |
| 10+ | 196.75 грн |
| 25+ | 186.02 грн |
| 100+ | 143.55 грн |
| 250+ | 128.80 грн |
| 500+ | 124.15 грн |
| 1000+ | 101.50 грн |
| FDMC7200 |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 18.77 грн |
| FDMC7200 |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 30V 6A/8A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.95 грн |
| 10+ | 41.34 грн |
| 100+ | 28.41 грн |
| 500+ | 22.29 грн |
| 1000+ | 20.23 грн |
| ESDL3141MXT5G |
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Виробник: onsemi
Description: ASYMMETRIC LOW CAP SURGE PROTECT
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A, 16.5A
Voltage - Reverse Standoff (Typ): 14V (Max), 5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V, 5.5V
Voltage - Clamping (Max) @ Ipp: 21.5V, 14V
Power Line Protection: No
Description: ASYMMETRIC LOW CAP SURGE PROTECT
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 1.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A, 16.5A
Voltage - Reverse Standoff (Typ): 14V (Max), 5V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V, 5.5V
Voltage - Clamping (Max) @ Ipp: 21.5V, 14V
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| NCV8535MN250R2G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.5V 500MA 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 190 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 2.5V 500MA 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 190 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Qualification: AEC-Q100
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 53.83 грн |
| 6000+ | 49.83 грн |
| NCV8535MN250R2G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.5V 500MA 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 190 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 2.5V 500MA 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 190 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Qualification: AEC-Q100
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 180.04 грн |
| 10+ | 108.96 грн |
| 25+ | 92.82 грн |
| 100+ | 70.45 грн |
| 250+ | 62.45 грн |
| 500+ | 57.61 грн |
| 1000+ | 52.73 грн |
| NCV2561SQT1G |
![]() |
Виробник: onsemi
Description: IC VIDEO AMP 1CH SC-88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 2.7V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Control Interface: Analog Voltage
Qualification: AEC-Q100
Description: IC VIDEO AMP 1CH SC-88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 2.7V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Control Interface: Analog Voltage
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| NCV2561SQT1G |
![]() |
Виробник: onsemi
Description: IC VIDEO AMP 1CH SC-88-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 2.7V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Control Interface: Analog Voltage
Qualification: AEC-Q100
Description: IC VIDEO AMP 1CH SC-88-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 2.7V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Control Interface: Analog Voltage
Qualification: AEC-Q100
на замовлення 2699 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 52.95 грн |
| 10+ | 45.34 грн |
| 25+ | 42.55 грн |
| 100+ | 30.27 грн |
| 250+ | 25.76 грн |
| 500+ | 24.47 грн |
| 1000+ | 18.37 грн |
| LC87F0808AUQFPTLM-H |
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Виробник: onsemi
Description: IC MCU 8BIT 8KB FLASH 36QFP
Packaging: Tape & Reel (TR)
Package / Case: 36-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Data Converters: A/D 10x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Connectivity: SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 36-QFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 36QFP
Packaging: Tape & Reel (TR)
Package / Case: 36-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Data Converters: A/D 10x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Connectivity: SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 36-QFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| NLV74VHC00DTR2G |
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Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 9700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 16.84 грн |
| 5000+ | 15.04 грн |
| 7500+ | 14.45 грн |
| NLV74VHC00DTR2G |
![]() |
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 9818 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.69 грн |
| 10+ | 40.64 грн |
| 25+ | 33.54 грн |
| 100+ | 24.22 грн |
| 250+ | 20.75 грн |
| 500+ | 18.65 грн |
| 1000+ | 16.63 грн |
| NTMTS002N08MC |
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Виробник: onsemi
Description: PTNG 80V IN CEBU PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 540µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
Description: PTNG 80V IN CEBU PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 540µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 218.42 грн |
| NTMTS002N08MC |
![]() |
Виробник: onsemi
Description: PTNG 80V IN CEBU PQFN88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 540µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
Description: PTNG 80V IN CEBU PQFN88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 229A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 90A, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 540µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 40 V
на замовлення 23900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 490.42 грн |
| 10+ | 318.89 грн |
| 100+ | 237.69 грн |
| NTBLS002N08MC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 292.83 грн |
| NTBLS002N08MC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 658.24 грн |
| 10+ | 428.09 грн |
| 25+ | 374.48 грн |
| 100+ | 294.52 грн |
| 250+ | 266.58 грн |
| 500+ | 264.63 грн |
| NVMYS1D6N04CLTWG |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVMYS1D6N04CLTWG |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 188.19 грн |
| 10+ | 116.50 грн |
| 100+ | 79.68 грн |
| NVMYS1D6N04CLT1G |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 55.77 грн |
| NVMYS1D6N04CLT1G |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Qualification: AEC-Q101
на замовлення 17875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 189.81 грн |
| 10+ | 117.28 грн |
| 100+ | 80.21 грн |
| 500+ | 60.40 грн |
| 1000+ | 55.62 грн |
| NVMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.


























