| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NCV59151MN25TYG | onsemi |
 Description: IC REG LINEAR 2.5V 1.5A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 13.5V Number of Regulators: 1 Supplier Device Package: 8-DFN (4x4) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable, Error Flag Grade: Automotive Voltage Dropout (Max): 0.5V @ 1.5A Protection Features: Over Current, Over Temperature, Reverse Polarity Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
NCP59151MN25TYG | onsemi |
Description: IC REG LINEAR 2.5V 1.5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 13.5V Number of Regulators: 1 Supplier Device Package: 8-DFN (4x4) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable, Error Flag Voltage Dropout (Max): 0.5V @ 1.5A Protection Features: Over Current, Over Temperature, Reverse Polarity |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
NCP5661MN25T2G | onsemi |
Description: IC REG LINEAR 2.5V 1A 6DFN Packaging: Bulk Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 3 mA Voltage - Input (Max): 9V Number of Regulators: 1 Supplier Device Package: 6-DFN (3x3.3) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 70dB ~ 65dB (120Hz ~ 1kHz) Voltage Dropout (Max): 1.3V @ 1A Protection Features: Over Current, Over Temperature |
на замовлення 30630 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NCP691MN25T2G | onsemi |
Description: IC REG LINEAR 2.5V 1A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-DFN (3x3) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Voltage Dropout (Max): 0.3V @ 1A Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 240 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NCP691MN25T2G | onsemi |
Description: IC REG LINEAR 2.5V 1A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-DFN (3x3) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Voltage Dropout (Max): 0.3V @ 1A Protection Features: Over Temperature, Short Circuit Current - Supply (Max): 240 µA |
на замовлення 5895 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NCV8605MN25T2G | onsemi |
Description: IC REG LINEAR 2.5V 500MA 6DFN Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 180 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-DFN (3x3.3) Voltage - Output (Min/Fixed): 2.5V Grade: Automotive Voltage Dropout (Max): 0.25V @ 500mA Protection Features: Over Current, Over Temperature Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
AR2020CSSM13SMTA0-DP2 | onsemi |
Description: 20MP 1/1.8 CIS SO Packaging: Tray Type: CMOS Pixel Size: 1.4µm x 1.4µm Active Pixel Array: 5120H x 3840V Frames per Second: 60.0 |
на замовлення 1100 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
AR2020CSSM13SMTA0-DP | onsemi |
Description: CMOS IMAGE SENSOR 5120H X 3840V Packaging: Tray Type: CMOS Pixel Size: 1.4µm x 1.4µm Active Pixel Array: 5120H x 3840V Frames per Second: 60.0 |
на замовлення 1231 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
2SB1302S-TD-E | onsemi |
Description: TRANS PNP 20V 5A PCP Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 320MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.3 W |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
FFAF40U60DNTU | onsemi |
Description: DIODE ARRAY GP 600V 40A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 40A Supplier Device Package: TO-3PF Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
NJVMJD6039T4G | onsemi |
Description: TRANS NPN DARL 80V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V Supplier Device Package: DPAK Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
NJVMJD6039T4G | onsemi |
Description: TRANS NPN DARL 80V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V Supplier Device Package: DPAK Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
FDD1600N10ALZD | onsemi |
Description: MOSFET N-CH 100V 6.8A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V Power Dissipation (Max): 14.9W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
CAT25640VI-G | onsemi |
Description: IC EEPROM 64KBIT SPI 20MHZ 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 20 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 12846 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| LV5071M-TLM-H | onsemi |
Description: IC REG BUCK ADJ 1A 12MFPS Packaging: Tape & Reel (TR) Package / Case: 12-LSOP (0.173", 4.40mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 12-MFPS Synchronous Rectifier: Yes Voltage - Output (Max): 3.3V Voltage - Input (Min): 2.95V Voltage - Output (Min/Fixed): 0.8V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
| LV5071M-TLM-H | onsemi |
Description: IC REG BUCK ADJ 1A 12MFPS Packaging: Bulk Package / Case: 12-LSOP (0.173", 4.40mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1A Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.2MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 12-MFPS Synchronous Rectifier: Yes Voltage - Output (Max): 3.3V Voltage - Input (Min): 2.95V Voltage - Output (Min/Fixed): 0.8V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
 |
SN74LS02D | onsemi |
Description: IC NOR 4-CIR 2-IN 14-SOIC Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.75V ~ 5.25V Current - Output High, Low: 400µA, 16mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 15ns @ 5V, 15pF Number of Circuits: 4 |
на замовлення 13122 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
MBR20L60CTG | onsemi |
Description: DIODE ARRAY SCHOT 60V 10A TO-220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A Current - Reverse Leakage @ Vr: 380 µA @ 60 V |
на замовлення 11850 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
CAT24C08TDI-GT3 | onsemi |
Description: IC EEPROM 8KBIT 400KHZ TSOT23-5 Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: TSOT-23-5 Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
CAT24C08TDI-GT3 | onsemi |
Description: IC EEPROM 8KBIT 400KHZ TSOT23-5 Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: TSOT-23-5 Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
на замовлення 2569 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
NSM80100MT1G | onsemi |
Description: TRANS PNP 80V 0.5A SC74 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 150MHz Supplier Device Package: SC-74 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 270 mW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
NSM80100MT1G | onsemi |
Description: TRANS PNP 80V 0.5A SC74 Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V Frequency - Transition: 150MHz Supplier Device Package: SC-74 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 270 mW |
на замовлення 2979 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
NB7NPQ1404E2MMUTWG | onsemi |
Description: NB7NPQ1404E2M - 3.3 V USB 3.1 GE Packaging: Tape & Reel (TR) Package / Case: 34-UFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: Differential Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Applications: USB Current - Supply: 250mA Data Rate (Max): 10Gbps Supplier Device Package: 34-UQFN (2.5x4.5) Signal Conditioning: Input Equalization |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
NB7NPQ1404E2MMUTWG | onsemi |
Description: NB7NPQ1404E2M - 3.3 V USB 3.1 GE Packaging: Cut Tape (CT) Package / Case: 34-UFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: Differential Type: Buffer, ReDriver Input: CML Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Applications: USB Current - Supply: 250mA Data Rate (Max): 10Gbps Supplier Device Package: 34-UQFN (2.5x4.5) Signal Conditioning: Input Equalization |
на замовлення 3021 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| NTC160N120SC1 | onsemi |
Description: SILICON CARBIDE MOSFET, CHANNEL, Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVC160N120SC1 | onsemi |
Description: SILICON CARBIDE MOSFET, NCHANNEL Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: Die Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
NVBG070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET-ELI Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.4V @ 7mA Power Dissipation (Max): 172W (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
на замовлення 74400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NVBG070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET-ELI Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.4V @ 7mA Power Dissipation (Max): 172W (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
на замовлення 74918 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NTBG070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.4V @ 7mA Power Dissipation (Max): 172W (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NTBG070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V |
на замовлення 3115 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
NTH4L070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET EL Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V |
на замовлення 47 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NVH4L070N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET-ELI Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 7mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 399 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
SA28ARL | onsemi |
Description: TVS DIODE 28VWM 45.4VC AXIAL Packaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 500W Power Line Protection: No |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| NLAS3257CMX3TCG | onsemi |
Description: MUX / DEMUX ANALOG SWITCH LOW VO Packaging: Bulk Package / Case: 6-XFLGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 9.9Ohm -3db Bandwidth: 1GHz Supplier Device Package: 6-XLLGA (1x1) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Crosstalk: -21dB @ 240MHz Switch Circuit: SPDT - Open/Closed Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 300mOhm Switch Time (Ton, Toff) (Max): 30ns, 25ns Channel Capacitance (CS(off), CD(off)): 1.5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
NVVR26A120M1WSB | onsemi |
Description: MOSFET 2N-CH 1200V AHPM15-CDE Packaging: Tube Package / Case: 15-PowerDIP Module (2.441", 62.00mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1000W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 150mA Supplier Device Package: AHPM15-CDE Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
NVVR26A120M1WST | onsemi |
Description: MOSFET 2N-CH 1200V AHPM15-CDA Packaging: Tube Package / Case: 15-PowerDIP Module (2.441", 62.00mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1000W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 150mA Supplier Device Package: AHPM15-CDA Grade: Automotive Qualification: AEC-Q101 |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NVVR26A120M1WSS | onsemi |
Description: MOSFET 2N-CH 1200V AHPM15-CDI Packaging: Tube Package / Case: 15-PowerDIP Module (2.441", 62.00mm) Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1000W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 150mA Supplier Device Package: AHPM15-CDI Grade: Automotive Qualification: AEC-Q101 |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
SZNUP2201MR6T1G | onsemi |
Description: TVS DIODE 5VWM 20VC 6TSOP Qualification: AEC-Q101 Grade: Automotive Power Line Protection: Yes Power - Peak Pulse: 500W Voltage - Clamping (Max) @ Ipp: 20V Voltage - Breakdown (Min): 6V Unidirectional Channels: 2 Supplier Device Package: 6-TSOP Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 25A (8/20µs) Capacitance @ Frequency: 3pF @ 1MHz Applications: DVI, Telecom, USB Operating Temperature: -40°C ~ 125°C (TJ) Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
MMBV105GLT1 | onsemi |
Description: DIODE TUNING SS 30V SOT23 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
MMBV105GLT1 | onsemi |
Description: DIODE TUNING SS 30V SOT23 Packaging: Bulk |
на замовлення 31881 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
NSBC114EDP6T5G | onsemi |
Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Bulk Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 |
на замовлення 529587 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
SZNZ8F5V6SMX2WT5G | onsemi |
Description: 5.6V ZENER TIGHT TOLERANCE IN X2 Tolerance: ±2.32% Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: 2-X2DFNW (1x0.6) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
SZNZ8F5V6SMX2WT5G | onsemi |
Description: 5.6V ZENER TIGHT TOLERANCE IN X2 Tolerance: ±2.32% Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: 2-X2DFNW (1x0.6) Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V Qualification: AEC-Q101 |
на замовлення 6996 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| PCFG60T120SQF | onsemi |
Description: IGBT FIELD STOP 1200V WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A Supplier Device Package: Wafer IGBT Type: Field Stop Gate Charge: 318 nC Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
MC33761SNT1-050 | onsemi |
Description: IC REG LINEAR 5V 80MA 5-TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 180 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 5V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 80mA Protection Features: Antisaturation, Over Current, Over Temperature |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
MC33761SNT1-029 | onsemi |
Description: IC REG LINEAR 2.9V 80MA 5-TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 180 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.9V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 80mA Protection Features: Antisaturation, Over Current, Over Temperature |
на замовлення 5844 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
MC33761SNT1-028 | onsemi |
Description: IC REG LINEAR 2.8V 80MA 5-TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 180 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 80mA Protection Features: Antisaturation, Over Current, Over Temperature |
на замовлення 3084 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
MC33761SNT1-028G | onsemi |
Description: IC REG LINEAR 2.8V 80MA 5TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 180 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 80mA Protection Features: Antisaturation, Over Current, Over Temperature |
на замовлення 12375 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
MC33761SNT1-029G | onsemi |
Description: IC REG LINEAR 2.9V 80MA 5TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 180 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 2.9V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 80mA Protection Features: Antisaturation, Over Current, Over Temperature |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
NSVUMZ1NT1G | onsemi |
Description: TRANS NPN/PNP 50V 200MA SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Complementary Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 114MHz, 142MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12267 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
1SMA26CAT3 | onsemi |
Description: TVS 400W 26V BIDIRECT SMA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
CAT24C512WIGT3JN | onsemi |
Description: 512-KB I2C SERIAL EEPROM Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 64K x 8 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
CAT24C512WIGT3JN | onsemi |
Description: 512-KB I2C SERIAL EEPROM Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 64K x 8 |
на замовлення 2562 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
NXH010P120M3F1PG | onsemi |
Description: MOSFET 2N-CH 1200V 105A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 272W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V Vgs(th) (Max) @ Id: 4.4V @ 45mA |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
NXH010P120M3F1PTG | onsemi |
Description: MOSFET 2N-CH 1200V 105A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 272W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V Vgs(th) (Max) @ Id: 4.4V @ 45mA |
на замовлення 4227 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
NXH010P120MNF1PTNG | onsemi |
Description: MOSFET 2N-CH 1200V 114A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 250W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 40mA |
на замовлення 1006 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
NXH006P120M3F2PTHG | onsemi |
Description: MOSFET 2N-CH 1200V 191A 36PIM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 556W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 191A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 11914pF @ 800V Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 18V Gate Charge (Qg) (Max) @ Vgs: 622nC @ 20V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 4.4V @ 80mA Supplier Device Package: 36-PIM (56.7x62.8) |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| BD238 | onsemi |
Description: TRANS PNP 80V 2A TO-126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 25 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
SZESD8011MUT5G | onsemi |
Description: TVS DIODE 5.5VWM 17.2VC 2X3DFN Packaging: Bulk Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.1pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.5V Voltage - Clamping (Max) @ Ipp: 17.2V (Typ) Power - Peak Pulse: 34W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SSVPZT751T1G | onsemi |
Description: IC TRANS HC XSTR SOT223 Packaging: Bulk |
на замовлення 13000 шт: термін постачання 21-31 дні (днів) |
|
| NCV59151MN25TYG |
|
Виробник: onsemi
Description: IC REG LINEAR 2.5V 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 13.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Error Flag
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 1.5A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
Description: IC REG LINEAR 2.5V 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 13.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Error Flag
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 1.5A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| NCP59151MN25TYG |
|
Виробник: onsemi
Description: IC REG LINEAR 2.5V 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 13.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Error Flag
Voltage Dropout (Max): 0.5V @ 1.5A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Description: IC REG LINEAR 2.5V 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 13.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Error Flag
Voltage Dropout (Max): 0.5V @ 1.5A
Protection Features: Over Current, Over Temperature, Reverse Polarity
товару немає в наявності
В кошику
од. на суму грн.
| NCP5661MN25T2G |
|
Виробник: onsemi
Description: IC REG LINEAR 2.5V 1A 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 3 mA
Voltage - Input (Max): 9V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB ~ 65dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.5V 1A 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 3 mA
Voltage - Input (Max): 9V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 70dB ~ 65dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 1.3V @ 1A
Protection Features: Over Current, Over Temperature
на замовлення 30630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 411+ | 52.92 грн |
| NCP691MN25T2G |
|
Виробник: onsemi
Description: IC REG LINEAR 2.5V 1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.3V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 240 µA
Description: IC REG LINEAR 2.5V 1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.3V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 240 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 31.04 грн |
| NCP691MN25T2G |
|
Виробник: onsemi
Description: IC REG LINEAR 2.5V 1A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.3V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 240 µA
Description: IC REG LINEAR 2.5V 1A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.3V @ 1A
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 240 µA
на замовлення 5895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.56 грн |
| 10+ | 68.34 грн |
| 25+ | 57.45 грн |
| 100+ | 42.69 грн |
| 250+ | 37.32 грн |
| 500+ | 34.07 грн |
| 1000+ | 30.87 грн |
| NCV8605MN25T2G |
|
Виробник: onsemi
Description: IC REG LINEAR 2.5V 500MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
Description: IC REG LINEAR 2.5V 500MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.73 грн |
| 10+ | 103.77 грн |
| 25+ | 97.83 грн |
| 100+ | 73.46 грн |
| 250+ | 64.27 грн |
| 500+ | 62.44 грн |
| 1000+ | 48.77 грн |
| AR2020CSSM13SMTA0-DP2 |
|
Виробник: onsemi
Description: 20MP 1/1.8 CIS SO
Packaging: Tray
Type: CMOS
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 5120H x 3840V
Frames per Second: 60.0
Description: 20MP 1/1.8 CIS SO
Packaging: Tray
Type: CMOS
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 5120H x 3840V
Frames per Second: 60.0
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5407.77 грн |
| 5+ | 4392.46 грн |
| 10+ | 4082.15 грн |
| 25+ | 3751.72 грн |
| AR2020CSSM13SMTA0-DP |
|
Виробник: onsemi
Description: CMOS IMAGE SENSOR 5120H X 3840V
Packaging: Tray
Type: CMOS
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 5120H x 3840V
Frames per Second: 60.0
Description: CMOS IMAGE SENSOR 5120H X 3840V
Packaging: Tray
Type: CMOS
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 5120H x 3840V
Frames per Second: 60.0
на замовлення 1231 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3421.49 грн |
| 5+ | 3035.77 грн |
| 10+ | 2939.33 грн |
| 25+ | 2650.09 грн |
| 50+ | 2575.98 грн |
| 100+ | 2507.98 грн |
| 2SB1302S-TD-E |
|
Виробник: onsemi
Description: TRANS PNP 20V 5A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
Description: TRANS PNP 20V 5A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.3 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1109+ | 20.39 грн |
| FFAF40U60DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 40A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE ARRAY GP 600V 40A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| NJVMJD6039T4G |
|
Виробник: onsemi
Description: TRANS NPN DARL 80V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS NPN DARL 80V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NJVMJD6039T4G |
|
Виробник: onsemi
Description: TRANS NPN DARL 80V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS NPN DARL 80V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
товару немає в наявності
В кошику
од. на суму грн.
| FDD1600N10ALZD |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 6.8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
Power Dissipation (Max): 14.9W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Description: MOSFET N-CH 100V 6.8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
Power Dissipation (Max): 14.9W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| CAT25640VI-G |
|
Виробник: onsemi
Description: IC EEPROM 64KBIT SPI 20MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT SPI 20MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 12846 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 525+ | 38.70 грн |
| LV5071M-TLM-H |
|
Виробник: onsemi
Description: IC REG BUCK ADJ 1A 12MFPS
Packaging: Tape & Reel (TR)
Package / Case: 12-LSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MFPS
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.95V
Voltage - Output (Min/Fixed): 0.8V
Description: IC REG BUCK ADJ 1A 12MFPS
Packaging: Tape & Reel (TR)
Package / Case: 12-LSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MFPS
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.95V
Voltage - Output (Min/Fixed): 0.8V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| LV5071M-TLM-H |
|
Виробник: onsemi
Description: IC REG BUCK ADJ 1A 12MFPS
Packaging: Bulk
Package / Case: 12-LSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MFPS
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.95V
Voltage - Output (Min/Fixed): 0.8V
Description: IC REG BUCK ADJ 1A 12MFPS
Packaging: Bulk
Package / Case: 12-LSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MFPS
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.95V
Voltage - Output (Min/Fixed): 0.8V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 392+ | 55.82 грн |
| SN74LS02D |
|
Виробник: onsemi
Description: IC NOR 4-CIR 2-IN 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 16mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 15pF
Number of Circuits: 4
Description: IC NOR 4-CIR 2-IN 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: 400µA, 16mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 15pF
Number of Circuits: 4
на замовлення 13122 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 264+ | 79.04 грн |
| MBR20L60CTG |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOT 60V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 60 V
Description: DIODE ARRAY SCHOT 60V 10A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 380 µA @ 60 V
на замовлення 11850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 366+ | 61.91 грн |
| CAT24C08TDI-GT3 |
|
Виробник: onsemi
Description: IC EEPROM 8KBIT 400KHZ TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT 400KHZ TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT24C08TDI-GT3 |
|
Виробник: onsemi
Description: IC EEPROM 8KBIT 400KHZ TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT 400KHZ TSOT23-5
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: TSOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
на замовлення 2569 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.75 грн |
| 13+ | 25.27 грн |
| 25+ | 24.56 грн |
| 50+ | 22.59 грн |
| 100+ | 22.11 грн |
| 250+ | 21.48 грн |
| 500+ | 20.65 грн |
| 1000+ | 20.17 грн |
| NSM80100MT1G |
|
Виробник: onsemi
Description: TRANS PNP 80V 0.5A SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 270 mW
Description: TRANS PNP 80V 0.5A SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 270 mW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NSM80100MT1G |
|
Виробник: onsemi
Description: TRANS PNP 80V 0.5A SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 270 mW
Description: TRANS PNP 80V 0.5A SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SC-74
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 270 mW
на замовлення 2979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.34 грн |
| 16+ | 19.09 грн |
| 100+ | 12.90 грн |
| 500+ | 9.40 грн |
| 1000+ | 8.50 грн |
| NB7NPQ1404E2MMUTWG |
|
Виробник: onsemi
Description: NB7NPQ1404E2M - 3.3 V USB 3.1 GE
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Current - Supply: 250mA
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UQFN (2.5x4.5)
Signal Conditioning: Input Equalization
Description: NB7NPQ1404E2M - 3.3 V USB 3.1 GE
Packaging: Tape & Reel (TR)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Current - Supply: 250mA
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UQFN (2.5x4.5)
Signal Conditioning: Input Equalization
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NB7NPQ1404E2MMUTWG |
|
Виробник: onsemi
Description: NB7NPQ1404E2M - 3.3 V USB 3.1 GE
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Current - Supply: 250mA
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UQFN (2.5x4.5)
Signal Conditioning: Input Equalization
Description: NB7NPQ1404E2M - 3.3 V USB 3.1 GE
Packaging: Cut Tape (CT)
Package / Case: 34-UFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: Differential
Type: Buffer, ReDriver
Input: CML
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Applications: USB
Current - Supply: 250mA
Data Rate (Max): 10Gbps
Supplier Device Package: 34-UQFN (2.5x4.5)
Signal Conditioning: Input Equalization
на замовлення 3021 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.65 грн |
| 10+ | 141.18 грн |
| 25+ | 129.23 грн |
| 100+ | 108.95 грн |
| 250+ | 103.07 грн |
| 500+ | 99.53 грн |
| 1000+ | 95.03 грн |
| 2500+ | 92.00 грн |
| NTC160N120SC1 |
|
Виробник: onsemi
Description: SILICON CARBIDE MOSFET, CHANNEL,
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Description: SILICON CARBIDE MOSFET, CHANNEL,
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| NVC160N120SC1 |
|
Виробник: onsemi
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE MOSFET, NCHANNEL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVBG070N120M3S |
|
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
на замовлення 74400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 552.71 грн |
| NVBG070N120M3S |
|
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 74918 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1053.80 грн |
| 10+ | 715.91 грн |
| 100+ | 651.46 грн |
| NTBG070N120M3S |
|
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE (SIC) MOSFET - E
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 244.04 грн |
| 2400+ | 233.18 грн |
| NTBG070N120M3S |
|
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
на замовлення 3115 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 601.83 грн |
| 10+ | 394.38 грн |
| 50+ | 315.09 грн |
| 100+ | 271.77 грн |
| NTH4L070N120M3S |
|
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 710.46 грн |
| 10+ | 469.59 грн |
| NVH4L070N120M3S |
|
Виробник: onsemi
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET-ELI
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 7mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
Qualification: AEC-Q101
на замовлення 399 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1211.60 грн |
| 30+ | 719.94 грн |
| 120+ | 622.14 грн |
| SA28ARL |
|
Виробник: onsemi
Description: TVS DIODE 28VWM 45.4VC AXIAL
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 28VWM 45.4VC AXIAL
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1397+ | 14.15 грн |
| NLAS3257CMX3TCG |
|
Виробник: onsemi
Description: MUX / DEMUX ANALOG SWITCH LOW VO
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 9.9Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 6-XLLGA (1x1)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -21dB @ 240MHz
Switch Circuit: SPDT - Open/Closed
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 300mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 1.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: MUX / DEMUX ANALOG SWITCH LOW VO
Packaging: Bulk
Package / Case: 6-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 9.9Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 6-XLLGA (1x1)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -21dB @ 240MHz
Switch Circuit: SPDT - Open/Closed
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 300mOhm
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel Capacitance (CS(off), CD(off)): 1.5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
товару немає в наявності
В кошику
од. на суму грн.
| NVVR26A120M1WSB |
|
Виробник: onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDE
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1000W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDE
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 1200V AHPM15-CDE
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1000W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDE
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NVVR26A120M1WST |
|
Виробник: onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDA
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1000W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDA
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 1200V AHPM15-CDA
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1000W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDA
Grade: Automotive
Qualification: AEC-Q101
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27599.47 грн |
| 12+ | 25540.42 грн |
| NVVR26A120M1WSS |
|
Виробник: onsemi
Description: MOSFET 2N-CH 1200V AHPM15-CDI
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1000W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDI
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 1200V AHPM15-CDI
Packaging: Tube
Package / Case: 15-PowerDIP Module (2.441", 62.00mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1000W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 31700pF @ 800V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1750nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 150mA
Supplier Device Package: AHPM15-CDI
Grade: Automotive
Qualification: AEC-Q101
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27149.09 грн |
| 12+ | 25601.76 грн |
| SZNUP2201MR6T1G |
|
Виробник: onsemi
Description: TVS DIODE 5VWM 20VC 6TSOP
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: Yes
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 20V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: DVI, Telecom, USB
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Description: TVS DIODE 5VWM 20VC 6TSOP
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: Yes
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 20V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: 6-TSOP
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: DVI, Telecom, USB
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| MMBV105GLT1 |
|
на замовлення 31881 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 790+ | 26.41 грн |
| NSBC114EDP6T5G |
|
Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
Description: TRANS PREBIAS 2NPN 50V SOT-963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
на замовлення 529587 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3366+ | 6.05 грн |
| SZNZ8F5V6SMX2WT5G |
|
Виробник: onsemi
Description: 5.6V ZENER TIGHT TOLERANCE IN X2
Tolerance: ±2.32%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Qualification: AEC-Q101
Description: 5.6V ZENER TIGHT TOLERANCE IN X2
Tolerance: ±2.32%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| SZNZ8F5V6SMX2WT5G |
|
Виробник: onsemi
Description: 5.6V ZENER TIGHT TOLERANCE IN X2
Tolerance: ±2.32%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Qualification: AEC-Q101
Description: 5.6V ZENER TIGHT TOLERANCE IN X2
Tolerance: ±2.32%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Qualification: AEC-Q101
на замовлення 6996 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.44 грн |
| 27+ | 11.53 грн |
| 100+ | 7.73 грн |
| 500+ | 5.57 грн |
| 1000+ | 5.00 грн |
| 2000+ | 4.52 грн |
| PCFG60T120SQF |
|
Виробник: onsemi
Description: IGBT FIELD STOP 1200V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
Supplier Device Package: Wafer
IGBT Type: Field Stop
Gate Charge: 318 nC
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Description: IGBT FIELD STOP 1200V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
Supplier Device Package: Wafer
IGBT Type: Field Stop
Gate Charge: 318 nC
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
товару немає в наявності
В кошику
од. на суму грн.
| MC33761SNT1-050 |
|
Виробник: onsemi
Description: IC REG LINEAR 5V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
Description: IC REG LINEAR 5V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2049+ | 11.39 грн |
| MC33761SNT1-029 |
|
Виробник: onsemi
Description: IC REG LINEAR 2.9V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
Description: IC REG LINEAR 2.9V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
на замовлення 5844 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2049+ | 11.39 грн |
| MC33761SNT1-028 |
|
Виробник: onsemi
Description: IC REG LINEAR 2.8V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
Description: IC REG LINEAR 2.8V 80MA 5-TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
на замовлення 3084 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2049+ | 11.39 грн |
| MC33761SNT1-028G |
|
Виробник: onsemi
Description: IC REG LINEAR 2.8V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
Description: IC REG LINEAR 2.8V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
на замовлення 12375 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1048+ | 21.02 грн |
| MC33761SNT1-029G |
|
Виробник: onsemi
Description: IC REG LINEAR 2.9V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
Description: IC REG LINEAR 2.9V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 2.9V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 80mA
Protection Features: Antisaturation, Over Current, Over Temperature
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 919+ | 23.92 грн |
| NSVUMZ1NT1G |
|
Виробник: onsemi
Description: TRANS NPN/PNP 50V 200MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 114MHz, 142MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN/PNP 50V 200MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 114MHz, 142MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12267 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 19.03 грн |
| 28+ | 11.15 грн |
| 100+ | 6.92 грн |
| 500+ | 4.77 грн |
| 1000+ | 4.21 грн |
| CAT24C512WIGT3JN |
|
Виробник: onsemi
Description: 512-KB I2C SERIAL EEPROM
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
Description: 512-KB I2C SERIAL EEPROM
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CAT24C512WIGT3JN |
|
Виробник: onsemi
Description: 512-KB I2C SERIAL EEPROM
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
Description: 512-KB I2C SERIAL EEPROM
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
на замовлення 2562 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.82 грн |
| 10+ | 38.94 грн |
| 25+ | 37.93 грн |
| 50+ | 34.85 грн |
| 100+ | 34.09 грн |
| 250+ | 33.09 грн |
| 500+ | 31.79 грн |
| 1000+ | 31.04 грн |
| NXH010P120M3F1PG |
|
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V
Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 45mA
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V
Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 45mA
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5038.27 грн |
| NXH010P120M3F1PTG |
|
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V
Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 45mA
Description: MOSFET 2N-CH 1200V 105A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 272W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6451pF @ 800V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 90A, 18V
Gate Charge (Qg) (Max) @ Vgs: 314nC @ 18V
Vgs(th) (Max) @ Id: 4.4V @ 45mA
на замовлення 4227 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5038.27 грн |
| NXH010P120MNF1PTNG |
|
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
Description: MOSFET 2N-CH 1200V 114A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 250W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
на замовлення 1006 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7535.20 грн |
| NXH006P120M3F2PTHG |
|
Виробник: onsemi
Description: MOSFET 2N-CH 1200V 191A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 556W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 191A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11914pF @ 800V
Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 622nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 80mA
Supplier Device Package: 36-PIM (56.7x62.8)
Description: MOSFET 2N-CH 1200V 191A 36PIM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 556W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 191A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11914pF @ 800V
Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 622nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 80mA
Supplier Device Package: 36-PIM (56.7x62.8)
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9849.76 грн |
| BD238 |
|
Виробник: onsemi
Description: TRANS PNP 80V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Description: TRANS PNP 80V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
товару немає в наявності
В кошику
од. на суму грн.
| SZESD8011MUT5G |
|
Виробник: onsemi
Description: TVS DIODE 5.5VWM 17.2VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 17.2V (Typ)
Power - Peak Pulse: 34W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5.5VWM 17.2VC 2X3DFN
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 17.2V (Typ)
Power - Peak Pulse: 34W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SSVPZT751T1G |
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 40.76 грн |