| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SZMM3Z4V7T1G | onsemi |
Description: DIODE ZENER 4.7V 300MW SOD323Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 22788 шт: термін постачання 21-31 дні (днів) |
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SZMMSZ5231BT1G | onsemi |
Description: DIODE ZENER 5.1V 500MW SOD123Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1278 шт: термін постачання 21-31 дні (днів) |
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SZNUD3124DMT1G | onsemi |
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 800mOhm (Max) Voltage - Load: 28V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 150mA Ratio - Input:Output: 1:1 Supplier Device Package: SC-74 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 46269 шт: термін постачання 21-31 дні (днів) |
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SZNUD3124LT1G | onsemi |
Description: IC PWR DRVR N-CHAN 1:1 SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 800mOhm (Max) Voltage - Load: 28V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 150mA Ratio - Input:Output: 1:1 Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 127190 шт: термін постачання 21-31 дні (днів) |
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SZNUD3160DMT1G | onsemi |
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 1.8Ohm (Max) Voltage - Load: 61V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 150mA Ratio - Input:Output: 1:1 Supplier Device Package: SC-74 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 35158 шт: термін постачання 21-31 дні (днів) |
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TL494BDR2G | onsemi |
Description: IC REG CTRLR BCK/PSH-PULL 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Down, Step-Up/Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 200kHz Topology: Buck, Push-Pull Voltage - Supply (Vcc/Vdd): 7V ~ 40V Supplier Device Package: 16-SOIC Synchronous Rectifier: Yes Control Features: Dead Time Control, Frequency Control Output Phases: 1 Duty Cycle (Max): 48% Clock Sync: No Part Status: Active Number of Outputs: 2 |
на замовлення 6194 шт: термін постачання 21-31 дні (днів) |
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VEC2616-TL-H | onsemi |
Description: MOSFET N/P-CH 60V 3A/2.5A SOT28 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-28FL/VEC8 Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDBL0110N60 | onsemi |
Description: MOSFET N-CH 60V 300A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDBL0150N80 | onsemi |
Description: MOSFET N-CH 80V 300A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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FDMC8010ET30 | onsemi |
Description: MOSFET N-CH 30V 30A/174A POWER33Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Power33 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS8050ET30 | onsemi |
Description: MOSFET N-CH 30V 55A/423A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 3.3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FCB290N80 | onsemi |
Description: MOSFET N-CH 800V 17A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 212W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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FDBL0110N60 | onsemi |
Description: MOSFET N-CH 60V 300A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V |
на замовлення 1811 шт: термін постачання 21-31 дні (днів) |
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FDBL0150N80 | onsemi |
Description: MOSFET N-CH 80V 300A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V |
на замовлення 3092 шт: термін постачання 21-31 дні (днів) |
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FDMS8050ET30 | onsemi |
Description: MOSFET N-CH 30V 55A/423A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 3.3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
на замовлення 8495 шт: термін постачання 21-31 дні (днів) |
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FCB290N80 | onsemi |
Description: MOSFET N-CH 800V 17A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 212W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V |
на замовлення 1482 шт: термін постачання 21-31 дні (днів) |
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NCP785AH150T1G | onsemi |
Description: IC REG LINEAR 15V 10MA SOT89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 22 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 15V Part Status: Active PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCP785AH33T1G | onsemi |
Description: IC REG LINEAR 3.3V 10MA SOT89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 14 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 3.3V PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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NCP785AH50T1G | onsemi |
Description: IC REG LINEAR 5V 10MA SOT89-3Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 21 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 47500 шт: термін постачання 21-31 дні (днів) |
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NCP785AH150T1G | onsemi |
Description: IC REG LINEAR 15V 10MA SOT89-3Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 22 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 15V Part Status: Active PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 5733 шт: термін постачання 21-31 дні (днів) |
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NCP785AH33T1G | onsemi |
Description: IC REG LINEAR 3.3V 10MA SOT89-3Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 14 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 3.3V PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 45279 шт: термін постачання 21-31 дні (днів) |
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NCP785AH50T1G | onsemi |
Description: IC REG LINEAR 5V 10MA SOT89-3Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 21 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
на замовлення 49741 шт: термін постачання 21-31 дні (днів) |
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FDMA86108LZ | onsemi |
Description: MOSFET N-CH 100V 2.2A 6MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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FDMA86108LZ | onsemi |
Description: MOSFET N-CH 100V 2.2A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V |
на замовлення 53131 шт: термін постачання 21-31 дні (днів) |
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FAN54020UCX | onsemi |
Description: IC BATT CHG LI-ION 1CELL 25WLCSPPackaging: Tape & Reel (TR) Package / Case: 25-UFBGA, WLCSP Number of Cells: 1 Mounting Type: Surface Mount Interface: I2C Operating Temperature: -30°C ~ 85°C (TA) Battery Chemistry: Lithium Ion/Polymer Supplier Device Package: 25-WLCSP (2.4x2) Charge Current - Max: 1.5A Programmable Features: Current, Timer, Voltage Fault Protection: Over Temperature, Over Voltage, Short Circuit Voltage - Supply (Max): 7.5V Battery Pack Voltage: 4.5V (Max) Current - Charging: Constant - Programmable |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMT800150DC | onsemi |
Description: MOSFET N-CH 150V 15A/99A 8DUALPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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FDMT800100DC | onsemi |
Description: MOSFET N-CH 100V 24A/162A 8DUALPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMT800150DC | onsemi |
Description: MOSFET N-CH 150V 15A/99A 8DUALPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V |
на замовлення 43167 шт: термін постачання 21-31 дні (днів) |
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FDMT800100DC | onsemi |
Description: MOSFET N-CH 100V 24A/162A 8DUALPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V |
на замовлення 2346 шт: термін постачання 21-31 дні (днів) |
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FSA553UCX | onsemi |
Description: IC AUDIO SWITCH SPST DUAL WLCSPPackaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 800mOhm -3db Bandwidth: 200MHz Supplier Device Package: 9-WLCSP (1.22x1.22) Voltage - Supply, Single (V+): 1.5V ~ 3V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Number of Channels: 2 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FSA553UCX | onsemi |
Description: IC AUDIO SWITCH SPST DUAL WLCSPPackaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 800mOhm -3db Bandwidth: 200MHz Supplier Device Package: 9-WLCSP (1.22x1.22) Voltage - Supply, Single (V+): 1.5V ~ 3V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Number of Channels: 2 |
на замовлення 9256 шт: термін постачання 21-31 дні (днів) |
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3LN01SS-TL-E | onsemi |
Description: MOSFET N-CH 30V 150MA SC81 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NDDP010N25AZT4H | onsemi |
Description: MOSFET N-CH 250V 10A DPAK/TP-FAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: DPAK/TP-FA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TND321VD-TL-H | onsemi |
Description: IC HALF BRIDGE DRIVER SOT28FLPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 25V Rds On (Typ): 6Ohm LS, 11Ohm HS Applications: General Purpose Current - Peak Output: 800mA, 1A Technology: Power MOSFET Voltage - Load: 4.5V ~ 25V Supplier Device Package: SOT-28FL/VEC8 Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TND322VD-TL-H | onsemi |
Description: IC HALF BRIDGE DRIVER SOT28FLPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 25V Rds On (Typ): 6Ohm LS, 11Ohm HS Applications: General Purpose Current - Peak Output: 800mA, 1A Technology: Power MOSFET Voltage - Load: 4.5V ~ 25V Supplier Device Package: SOT-28FL/VEC8 Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TND323VD-TL-H | onsemi |
Description: IC HALF BRIDGE DRIVER SOT28FLPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 25V Rds On (Typ): 6Ohm LS, 11Ohm HS Applications: General Purpose Current - Peak Output: 800mA, 1A Technology: Power MOSFET Voltage - Load: 4.5V ~ 25V Supplier Device Package: SOT-28FL/VEC8 Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDN86501LZ | onsemi |
Description: MOSFET N-CH 60V 2.6A SUPERSOT3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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FDN86501LZ | onsemi |
Description: MOSFET N-CH 60V 2.6A SUPERSOT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V |
на замовлення 60344 шт: термін постачання 21-31 дні (днів) |
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FDMC86262P | onsemi |
Description: MOSFET P-CH 150V 2A/8.4A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc) Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDMC86262P | onsemi |
Description: MOSFET P-CH 150V 2A/8.4A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc) Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V |
на замовлення 19426 шт: термін постачання 21-31 дні (днів) |
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FNA25060 | onsemi |
Description: MOD SPM 600V 50A SPMCA-A34Packaging: Tube Package / Case: 34-PowerDIP Module (1.480", 37.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Active Current: 50 A Voltage: 600 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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FDMS86368-F085 | onsemi |
Description: MOSFET N-CH 80V 80A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power56 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDB86563-F085 | onsemi |
Description: MOSFET N-CH 60V 110A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCB110N65F | onsemi |
Description: MOSFET N-CH 650V 35A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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FDMS86368-F085 | onsemi |
Description: MOSFET N-CH 80V 80A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power56 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDB86563-F085 | onsemi |
Description: MOSFET N-CH 60V 110A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCB110N65F | onsemi |
Description: MOSFET N-CH 650V 35A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
на замовлення 3051 шт: термін постачання 21-31 дні (днів) |
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FSB50550ASE | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRSMD MODPackaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Not For New Designs Current: 2 A Voltage: 500 V |
на замовлення 433 шт: термін постачання 21-31 дні (днів) |
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FSV1045V | onsemi |
Description: DIODE SCHOTTKY 45V 10A TO2773Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 820pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A Current - Reverse Leakage @ Vr: 220 µA @ 45 V |
на замовлення 21470 шт: термін постачання 21-31 дні (днів) |
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FSV1060V | onsemi |
Description: DIODE SCHOTTKY 60V 10A TO2773Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 550pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
на замовлення 874245 шт: термін постачання 21-31 дні (днів) |
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HCPL2531SDVM | onsemi |
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA |
на замовлення 1644 шт: термін постачання 21-31 дні (днів) |
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| KAF-4320-AAA-JP-B1 | onsemi |
Description: IMAGE SENSOR CCD 4.3MP 84CPGA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| KAF-4320-AAA-JP-B2 | onsemi |
Description: IMAGE SENSOR CCD 4.3MP 84CPGA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NOM02A4-AG01G | onsemi |
Description: MOD IMAGE SENSOR 200DPI GRN A4Packaging: Box Package / Case: Module Supplier Device Package: Module |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KAF-0261-AAA-CD-BA | onsemi |
Description: IMAGE SENSOR CCD VGA 24CDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KAF-0402-AAA-CB-B1 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIPPackaging: Bulk Package / Case: 24-CDIP Module Type: CCD Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 9µm x 9µm Active Pixel Array: 768H x 512V Supplier Device Package: 24-CDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KAF-0402-AAA-CP-B1 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIPPackaging: Bulk Package / Case: 24-CDIP Module Type: CCD Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 9µm x 9µm Active Pixel Array: 768H x 512V Supplier Device Package: 24-CDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KAF-0402-AAA-CP-B2 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KAF-0402-ABA-CD-B1 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIPPackaging: Bulk Package / Case: 24-CDIP Module Type: CCD Voltage - Supply: 14.5V ~ 15.5V Pixel Size: 9µm x 9µm Active Pixel Array: 768H x 512V Supplier Device Package: 24-CDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KAF-0402-ABA-CD-B2 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP |
товару немає в наявності |
В кошику од. на суму грн. |
| SZMM3Z4V7T1G |
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Виробник: onsemi
Description: DIODE ZENER 4.7V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.7V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22788 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.63 грн |
| 37+ | 9.10 грн |
| 100+ | 6.15 грн |
| 500+ | 4.41 грн |
| 1000+ | 3.94 грн |
| SZMMSZ5231BT1G |
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Виробник: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1278 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 16.18 грн |
| 39+ | 8.53 грн |
| 100+ | 4.24 грн |
| 500+ | 3.91 грн |
| 1000+ | 3.84 грн |
| SZNUD3124DMT1G |
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Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 46269 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.66 грн |
| 16+ | 20.58 грн |
| 25+ | 18.37 грн |
| 100+ | 14.93 грн |
| 250+ | 13.83 грн |
| 500+ | 13.16 грн |
| 1000+ | 12.41 грн |
| SZNUD3124LT1G |
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Виробник: onsemi
Description: IC PWR DRVR N-CHAN 1:1 SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRVR N-CHAN 1:1 SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 127190 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.77 грн |
| 14+ | 24.27 грн |
| 25+ | 21.72 грн |
| 100+ | 17.71 грн |
| 250+ | 16.43 грн |
| 500+ | 15.66 грн |
| 1000+ | 14.78 грн |
| SZNUD3160DMT1G |
![]() |
Виробник: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.8Ohm (Max)
Voltage - Load: 61V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.8Ohm (Max)
Voltage - Load: 61V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 35158 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.88 грн |
| 12+ | 27.96 грн |
| 25+ | 25.00 грн |
| 100+ | 20.46 грн |
| 250+ | 19.02 грн |
| 500+ | 18.15 грн |
| 1000+ | 17.14 грн |
| TL494BDR2G |
![]() |
Виробник: onsemi
Description: IC REG CTRLR BCK/PSH-PULL 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Part Status: Active
Number of Outputs: 2
Description: IC REG CTRLR BCK/PSH-PULL 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Part Status: Active
Number of Outputs: 2
на замовлення 6194 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.24 грн |
| 10+ | 50.60 грн |
| 25+ | 45.63 грн |
| 100+ | 37.72 грн |
| 250+ | 35.29 грн |
| 500+ | 33.83 грн |
| 1000+ | 32.09 грн |
| VEC2616-TL-H |
Виробник: onsemi
Description: MOSFET N/P-CH 60V 3A/2.5A SOT28
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Discontinued at Digi-Key
Description: MOSFET N/P-CH 60V 3A/2.5A SOT28
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Discontinued at Digi-Key
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од. на суму грн.
| FDBL0110N60 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
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В кошику
од. на суму грн.
| FDBL0150N80 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 168.85 грн |
| FDMC8010ET30 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 30A/174A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
Description: MOSFET N-CH 30V 30A/174A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
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В кошику
од. на суму грн.
| FDMS8050ET30 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 139.49 грн |
| FCB290N80 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 800V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
Description: MOSFET N-CH 800V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 260.19 грн |
| FDBL0110N60 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
на замовлення 1811 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 508.40 грн |
| 10+ | 330.57 грн |
| 100+ | 246.22 грн |
| FDBL0150N80 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 3092 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 435.17 грн |
| 10+ | 280.62 грн |
| 100+ | 202.04 грн |
| 500+ | 186.77 грн |
| FDMS8050ET30 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
на замовлення 8495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 375.56 грн |
| 10+ | 240.61 грн |
| 100+ | 171.90 грн |
| 500+ | 154.30 грн |
| FCB290N80 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 800V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
Description: MOSFET N-CH 800V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
на замовлення 1482 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 505.00 грн |
| 10+ | 344.83 грн |
| 100+ | 263.10 грн |
| NCP785AH150T1G |
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Виробник: onsemi
Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 31.84 грн |
| NCP785AH33T1G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 31.84 грн |
| 5000+ | 29.90 грн |
| 7500+ | 29.52 грн |
| 12500+ | 27.30 грн |
| 17500+ | 27.07 грн |
| NCP785AH50T1G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 47500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 35.27 грн |
| 5000+ | 33.13 грн |
| 7500+ | 32.72 грн |
| 12500+ | 30.27 грн |
| 17500+ | 30.02 грн |
| NCP785AH150T1G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 5733 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 123.48 грн |
| 10+ | 73.56 грн |
| 25+ | 61.60 грн |
| 100+ | 45.16 грн |
| 250+ | 38.94 грн |
| 500+ | 35.12 грн |
| 1000+ | 31.39 грн |
| NCP785AH33T1G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 45279 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 67.28 грн |
| 10+ | 46.66 грн |
| 25+ | 42.09 грн |
| 100+ | 34.72 грн |
| 250+ | 32.46 грн |
| 500+ | 31.09 грн |
| 1000+ | 29.47 грн |
| NCP785AH50T1G |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 49741 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.09 грн |
| 10+ | 51.34 грн |
| 25+ | 46.35 грн |
| 100+ | 38.34 грн |
| 250+ | 35.87 грн |
| 500+ | 34.39 грн |
| 1000+ | 32.62 грн |
| FDMA86108LZ |
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Виробник: onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 38.24 грн |
| 6000+ | 34.85 грн |
| 9000+ | 34.51 грн |
| FDMA86108LZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
на замовлення 53131 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.07 грн |
| 10+ | 87.09 грн |
| 100+ | 56.53 грн |
| 500+ | 42.05 грн |
| 1000+ | 37.56 грн |
| FAN54020UCX |
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Виробник: onsemi
Description: IC BATT CHG LI-ION 1CELL 25WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 25-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 25-WLCSP (2.4x2)
Charge Current - Max: 1.5A
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 7.5V
Battery Pack Voltage: 4.5V (Max)
Current - Charging: Constant - Programmable
Description: IC BATT CHG LI-ION 1CELL 25WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 25-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 25-WLCSP (2.4x2)
Charge Current - Max: 1.5A
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 7.5V
Battery Pack Voltage: 4.5V (Max)
Current - Charging: Constant - Programmable
товару немає в наявності
В кошику
од. на суму грн.
| FDMT800150DC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 271.74 грн |
| FDMT800100DC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| FDMT800150DC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
на замовлення 43167 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 619.96 грн |
| 10+ | 407.40 грн |
| 100+ | 320.30 грн |
| FDMT800100DC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
на замовлення 2346 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 527.99 грн |
| 10+ | 389.20 грн |
| 100+ | 359.98 грн |
| FSA553UCX |
![]() |
Виробник: onsemi
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 48.04 грн |
| 6000+ | 45.24 грн |
| 9000+ | 44.73 грн |
| FSA553UCX |
![]() |
Виробник: onsemi
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
на замовлення 9256 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 167.76 грн |
| 10+ | 101.03 грн |
| 25+ | 85.19 грн |
| 100+ | 63.15 грн |
| 250+ | 54.90 грн |
| 500+ | 49.82 грн |
| 1000+ | 44.82 грн |
| 3LN01SS-TL-E |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 150MA SC81
Description: MOSFET N-CH 30V 150MA SC81
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| NDDP010N25AZT4H |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 250V 10A DPAK/TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
Description: MOSFET N-CH 250V 10A DPAK/TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
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| TND321VD-TL-H |
![]() |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
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| TND322VD-TL-H |
![]() |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
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| TND323VD-TL-H |
![]() |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
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| FDN86501LZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 68.28 грн |
| FDN86501LZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
на замовлення 60344 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 222.27 грн |
| 10+ | 138.34 грн |
| 100+ | 95.25 грн |
| 500+ | 72.09 грн |
| 1000+ | 66.53 грн |
| FDMC86262P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 36.52 грн |
| 6000+ | 32.80 грн |
| 9000+ | 32.66 грн |
| FDMC86262P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
на замовлення 19426 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 133.70 грн |
| 10+ | 82.01 грн |
| 100+ | 55.11 грн |
| 500+ | 40.90 грн |
| 1000+ | 37.52 грн |
| FNA25060 |
![]() |
Виробник: onsemi
Description: MOD SPM 600V 50A SPMCA-A34
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 50 A
Voltage: 600 V
Description: MOD SPM 600V 50A SPMCA-A34
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 50 A
Voltage: 600 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4586.71 грн |
| FDMS86368-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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| FDB86563-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
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| FCB110N65F |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 231.35 грн |
| FDMS86368-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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| FDB86563-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
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| FCB110N65F |
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Виробник: onsemi
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
на замовлення 3051 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 551.84 грн |
| 10+ | 359.84 грн |
| 100+ | 272.69 грн |
| FSB50550ASE |
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Виробник: onsemi
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Not For New Designs
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Not For New Designs
Current: 2 A
Voltage: 500 V
на замовлення 433 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 810.72 грн |
| 10+ | 539.93 грн |
| 100+ | 404.19 грн |
| FSV1045V |
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Виробник: onsemi
Description: DIODE SCHOTTKY 45V 10A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 45 V
на замовлення 21470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.86 грн |
| 10+ | 65.77 грн |
| 100+ | 57.13 грн |
| 500+ | 42.20 грн |
| 1000+ | 39.27 грн |
| FSV1060V |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 10A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 550pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: DIODE SCHOTTKY 60V 10A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 550pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
на замовлення 874245 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 110.71 грн |
| 10+ | 70.36 грн |
| 100+ | 55.57 грн |
| 500+ | 41.25 грн |
| 1000+ | 37.91 грн |
| HCPL2531SDVM |
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Виробник: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
на замовлення 1644 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 169.47 грн |
| 10+ | 117.27 грн |
| 100+ | 90.09 грн |
| 500+ | 73.31 грн |
| KAF-4320-AAA-JP-B1 |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR CCD 4.3MP 84CPGA
Description: IMAGE SENSOR CCD 4.3MP 84CPGA
товару немає в наявності
В кошику
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| KAF-4320-AAA-JP-B2 |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR CCD 4.3MP 84CPGA
Description: IMAGE SENSOR CCD 4.3MP 84CPGA
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| NOM02A4-AG01G |
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Виробник: onsemi
Description: MOD IMAGE SENSOR 200DPI GRN A4
Packaging: Box
Package / Case: Module
Supplier Device Package: Module
Description: MOD IMAGE SENSOR 200DPI GRN A4
Packaging: Box
Package / Case: Module
Supplier Device Package: Module
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| KAF-0261-AAA-CD-BA |
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Виробник: onsemi
Description: IMAGE SENSOR CCD VGA 24CDIP
Description: IMAGE SENSOR CCD VGA 24CDIP
товару немає в наявності
В кошику
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| KAF-0402-AAA-CB-B1 |
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Виробник: onsemi
Description: IMAGE SENSOR CCD WVGA 24CDIP
Packaging: Bulk
Package / Case: 24-CDIP Module
Type: CCD
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 9µm x 9µm
Active Pixel Array: 768H x 512V
Supplier Device Package: 24-CDIP
Description: IMAGE SENSOR CCD WVGA 24CDIP
Packaging: Bulk
Package / Case: 24-CDIP Module
Type: CCD
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 9µm x 9µm
Active Pixel Array: 768H x 512V
Supplier Device Package: 24-CDIP
товару немає в наявності
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| KAF-0402-AAA-CP-B1 |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR CCD WVGA 24CDIP
Packaging: Bulk
Package / Case: 24-CDIP Module
Type: CCD
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 9µm x 9µm
Active Pixel Array: 768H x 512V
Supplier Device Package: 24-CDIP
Description: IMAGE SENSOR CCD WVGA 24CDIP
Packaging: Bulk
Package / Case: 24-CDIP Module
Type: CCD
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 9µm x 9µm
Active Pixel Array: 768H x 512V
Supplier Device Package: 24-CDIP
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| KAF-0402-AAA-CP-B2 |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR CCD WVGA 24CDIP
Description: IMAGE SENSOR CCD WVGA 24CDIP
товару немає в наявності
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| KAF-0402-ABA-CD-B1 |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR CCD WVGA 24CDIP
Packaging: Bulk
Package / Case: 24-CDIP Module
Type: CCD
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 9µm x 9µm
Active Pixel Array: 768H x 512V
Supplier Device Package: 24-CDIP
Description: IMAGE SENSOR CCD WVGA 24CDIP
Packaging: Bulk
Package / Case: 24-CDIP Module
Type: CCD
Voltage - Supply: 14.5V ~ 15.5V
Pixel Size: 9µm x 9µm
Active Pixel Array: 768H x 512V
Supplier Device Package: 24-CDIP
товару немає в наявності
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| KAF-0402-ABA-CD-B2 |
![]() |
Виробник: onsemi
Description: IMAGE SENSOR CCD WVGA 24CDIP
Description: IMAGE SENSOR CCD WVGA 24CDIP
товару немає в наявності
В кошику
од. на суму грн.
















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