| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FQA62N25C | onsemi |
 Description: MOSFET N-CH 250V 62A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SGL50N60RUFTU | onsemi |
Description: IGBT 600V 80A TO-264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A Supplier Device Package: TO-264-3 Td (on/off) @ 25°C: 26ns/66ns Switching Energy: 1.68mJ (on), 1.03mJ (off) Test Condition: 300V, 50A, 5.9Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FFL20U120DNTU | onsemi |
Description: DIODE ARRAY GP 1200V 20A TO2643 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-264-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 20 A Current - Reverse Leakage @ Vr: 20 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FFL60U60DNTU | onsemi |
Description: DIODE ARRAY GP 600V 60A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-264-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SGL60N90DG3TU | onsemi |
Description: IGBT TRENCH 900V 60A TO-264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.5 µs Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A Supplier Device Package: TO-264-3 IGBT Type: Trench Gate Charge: 260 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SGL60N90DG3YDTU | onsemi |
Description: IGBT TRENCH 900V 60A TO-264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.5 µs Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A Supplier Device Package: TO-264-3 IGBT Type: Trench Gate Charge: 260 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 120 A Power - Max: 180 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SGH80N60UFDTU | onsemi |
Description: IGBT 600V 80A 195W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 23ns/90ns Switching Energy: 570µJ (on), 590µJ (off) Test Condition: 300V, 40A, 5Ohm, 15V Gate Charge: 175 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 220 A Power - Max: 195 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4812CP | onsemi |
Description: IC PFC CTRLR CRM 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: 0°C ~ 70°C Voltage - Supply: 12V ~ 18V Mode: Critical Conduction (CRM) Supplier Device Package: 16-PDIP Part Status: Obsolete Current - Startup: 800 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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HUFA75652G3 | onsemi |
Description: MOSFET N-CH 100V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 515W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FGA50N60LS | onsemi |
Description: IGBT 600V 100A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 54ns/146ns Switching Energy: 1.1mJ (on), 3.2mJ (off) Test Condition: 300V, 50A, 5.9Ohm, 15V Gate Charge: 167 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 240 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FGA25N120ANTU | onsemi |
Description: IGBT NPT 1200V 40A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: TO-3P IGBT Type: NPT Td (on/off) @ 25°C: 60ns/170ns Switching Energy: 4.8mJ (on), 1mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 310 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQA170N06 | onsemi |
Description: MOSFET N-CH 60V 170A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 85A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQA160N08 | onsemi |
Description: MOSFET N-CH 80V 160A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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HUF75652G3 | onsemi |
Description: MOSFET N-CH 100V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 515W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V |
на замовлення 188 шт: термін постачання 21-31 дні (днів) |
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FOD0738R2 | onsemi |
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4821CSX | onsemi |
Description: IC PFC CTR AVER CURR 1MHZ 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 12V ~ 18V Frequency - Switching: 1MHz Mode: Average Current Supplier Device Package: 20-SOIC Part Status: Obsolete Current - Startup: 600 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4824CS1 | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4824CS1X | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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HGTG18N120BND | onsemi |
Description: IGBT NPT 1200V 54A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A Supplier Device Package: TO-247-3 IGBT Type: NPT Td (on/off) @ 25°C: 23ns/170ns Switching Energy: 1.9mJ (on), 1.8mJ (off) Test Condition: 960V, 18A, 3Ohm, 15V Gate Charge: 165 nC Part Status: Obsolete Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 390 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FJH1100_T50R | onsemi |
Description: DIODE GEN PURP 15V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 100 mA Current - Reverse Leakage @ Vr: 10 pA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FJH1102 | onsemi |
Description: DIODE STANDARD 25V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 pA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FJH1100 | onsemi |
Description: DIODE GEN PURP 15V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 100 mA Current - Reverse Leakage @ Vr: 10 pA @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FGL60N100DTU | onsemi |
Description: IGBT TRENCH 1000V 60A TO-264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.5 µs Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-264-3 IGBT Type: Trench Gate Charge: 230 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 120 A Power - Max: 176 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MM74C922WM | onsemi |
Description: IC ENCODER 16-KEY 1 X 8:4 20SOIC Packaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:4 Type: 16-Key Encoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 15V Independent Circuits: 1 Current - Output High, Low: 15mA, 16mA Voltage Supply Source: Single Supply Supplier Device Package: 20-SOIC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MM74C922WMX | onsemi |
Description: IC ENCODER 16-KEY 1 X 8:4 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:4 Type: 16-Key Encoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 15V Independent Circuits: 1 Current - Output High, Low: 15mA, 16mA Voltage Supply Source: Single Supply Supplier Device Package: 20-SOIC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MM74C923WMX | onsemi |
Description: IC ENCODER 20-KEY 1 X 9:4 20SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Circuit: 1 x 9:4 Type: 20-Key Encoder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 15V Independent Circuits: 1 Current - Output High, Low: 15mA, 16mA Voltage Supply Source: Single Supply Supplier Device Package: 20-SOIC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4824IS1 | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4824CS2X | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4824IS1X | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4824CS2 | onsemi |
Description: IC PFC CTR AV CURR 76KHZ 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 10.5V ~ 13.2V Frequency - Switching: 76kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 700 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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ML4812IQ | onsemi |
Description: IC PFC CTRLR CRM 20PLCC Packaging: Tube Package / Case: 20-LCC (J-Lead) Mounting Type: Surface Mount Voltage - Supply: 12V ~ 18V Mode: Critical Conduction (CRM) Supplier Device Package: 20-PLCC (9x9) Part Status: Obsolete Current - Startup: 800 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQL40N50F | onsemi |
Description: MOSFET N-CH 500V 40A TO264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-264-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FQL40N50 | onsemi |
Description: MOSFET N-CH 500V 40A TO264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-264-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SGL160N60UFTU | onsemi |
Description: IGBT 600V 160A TO-264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 80A Supplier Device Package: TO-264-3 Td (on/off) @ 25°C: 40ns/90ns Switching Energy: 2.5mJ (on), 1.76mJ (off) Test Condition: 300V, 80A, 3.9Ohm, 15V Gate Charge: 345 nC Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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HGTG20N60C3D | onsemi |
Description: IGBT 600V 45A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 28ns/151ns Switching Energy: 500µJ (on), 500µJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 91 nC Part Status: Obsolete Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 164 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SGL160N60UFDTU | onsemi |
Description: IGBT 600V 160A TO-264-3 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 80A Supplier Device Package: TO-264-3 Td (on/off) @ 25°C: 40ns/90ns Switching Energy: 2.5mJ (on), 1.76mJ (off) Test Condition: 300V, 80A, 3.9Ohm, 15V Gate Charge: 345 nC Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SCAN182245AMTDX | onsemi |
Description: IC TXRX NON-INVERT 5.5V 56TSSOP Packaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 9 Current - Output High, Low: 32mA, 15mA Supplier Device Package: 56-TSSOP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
SCAN182373ASSCX | onsemi |
Description: IC TRANSPARENT LATCH 8BIT 56SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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SCAN182245ASSCX | onsemi |
Description: IC TXRX NON-INVERT 5.5V 56SSOP Packaging: Tape & Reel (TR) Package / Case: 56-BSSOP (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 9 Current - Output High, Low: 32mA, 15mA Supplier Device Package: 56-SSOP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| FSAM15SH60 | onsemi |
Description: IC SMART POWER MOD 15A SPM32-AA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| FSBS10SH60 | onsemi |
Description: IC SMART POWER MOD 10A SPM27-BA Packaging: Tube Package / Case: Power Module Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 10 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| FF1N30HS60DD | onsemi |
Description: DIODE MOD AVAL 600V 30A SOT-227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Avalanche Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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FSAM10SH60 | onsemi |
Description: IC SMART POWER MOD 10A SPM32-AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| HGT1N40N60A4D | onsemi |
 Description: IGBT MOD 600V 110A 298W SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 298 W Current - Collector Cutoff (Max): 250 µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| FMS6G10US60S | onsemi |
Description: IGBT MODULE 600V 10A 66W 25PMAA Packaging: Box Package / Case: 25PM-AA Mounting Type: Chassis Mount Input: Single Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A NTC Thermistor: Yes Supplier Device Package: 25PM-AA Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 66 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 710 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| FMS6G20US60S | onsemi |
Description: IGBT MODULE 600V 20A 89W 25PMAA Packaging: Box Package / Case: 25PM-AA Mounting Type: Chassis Mount Input: Single Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: 25PM-AA Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 89 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.277 nF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| FMS6G20US60 | onsemi |
Description: IGBT MODULE 600V 20A 89W 25PMAA Packaging: Box Package / Case: 25PM-AA Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: 25PM-AA Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 89 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.277 nF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| FMS7G20US60 | onsemi |
Description: IGBT MODULE 600V 20A 89W 25PMAA Packaging: Box Package / Case: 25PM-AA Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: 25PM-AA Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 89 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1.277 nF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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FMG2G100US60 | onsemi |
Description: IGBT MODULE 600V 100A 400W 7PMGA Packaging: Bulk Package / Case: 7PM-GA Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A NTC Thermistor: No Supplier Device Package: 7PM-GA Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 400 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 10.84 nF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FMG2G200US60 | onsemi |
Description: IGBT MODULE 600V 200A 695W 7PMHA Packaging: Box Package / Case: 7PM-HA Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A NTC Thermistor: No Supplier Device Package: 7PM-HA Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 695 W Current - Collector Cutoff (Max): 250 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FMG2G150US60E | onsemi |
Description: IGBT MODULE 600V 150A 500W 7PMGA Packaging: Bulk Package / Case: 7PM-GA Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 150A NTC Thermistor: No Supplier Device Package: 7PM-GA Part Status: Obsolete Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 500 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 12.84 nF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FMG2G150US60 | onsemi |
Description: IGBT MODULE 600V 150A 595W 7PMHA Packaging: Box Package / Case: 7PM-HA Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A NTC Thermistor: No Supplier Device Package: 7PM-HA Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 595 W Current - Collector Cutoff (Max): 250 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FMG2G300US60E | onsemi |
Description: IGBT MODULE 600V 300A 892W 7PMHA Packaging: Box Package / Case: 7PM-HA Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A NTC Thermistor: No Supplier Device Package: 7PM-HA Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 892 W Current - Collector Cutoff (Max): 250 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FMG2G300US60 | onsemi |
Description: IGBT MODULE 600V 300A 892W 7PMIA Packaging: Bulk Package / Case: 7PM-IA Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A NTC Thermistor: No Supplier Device Package: 7PM-IA Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 892 W Current - Collector Cutoff (Max): 250 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FMG2G400US60 | onsemi |
Description: IGBT MOD 600V 400A 1136W 7PMIA Packaging: Box Package / Case: 7PM-IA Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 400A NTC Thermistor: No Supplier Device Package: 7PM-IA Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 1136 W Current - Collector Cutoff (Max): 250 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
MBRS4201T3G | onsemi |
Description: DIODE SCHOTTKY 200V 4A SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FOD8523SD | onsemi |
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -30°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 1000% @ 1mA Vce Saturation (Max): 1.2V Current Transfer Ratio (Max): 15000% @ 1mA Supplier Device Package: 4-SMD Voltage - Output (Max): 300V Rise / Fall Time (Typ): 100µs, 20µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 4174 шт: термін постачання 21-31 дні (днів) |
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FPF2124 | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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FFP30UP20DNTU | onsemi |
Description: DIODE ARRAY GP 200V 15A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
FFPF15UP20STU | onsemi |
Description: DIODE GEN PURP 200V 15A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
| FQA62N25C |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 62A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
Description: MOSFET N-CH 250V 62A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SGL50N60RUFTU |
|
Виробник: onsemi
Description: IGBT 600V 80A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
Supplier Device Package: TO-264-3
Td (on/off) @ 25°C: 26ns/66ns
Switching Energy: 1.68mJ (on), 1.03mJ (off)
Test Condition: 300V, 50A, 5.9Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Description: IGBT 600V 80A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
Supplier Device Package: TO-264-3
Td (on/off) @ 25°C: 26ns/66ns
Switching Energy: 1.68mJ (on), 1.03mJ (off)
Test Condition: 300V, 50A, 5.9Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
товару немає в наявності
В кошику
од. на суму грн.
| FFL20U120DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 1200V 20A TO2643
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-264-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 20A TO2643
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-264-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| FFL60U60DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE ARRAY GP 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SGL60N90DG3TU |
|
Виробник: onsemi
Description: IGBT TRENCH 900V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 260 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Description: IGBT TRENCH 900V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 260 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
товару немає в наявності
В кошику
од. на суму грн.
| SGL60N90DG3YDTU |
|
Виробник: onsemi
Description: IGBT TRENCH 900V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 260 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Description: IGBT TRENCH 900V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 260 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
товару немає в наявності
В кошику
од. на суму грн.
| SGH80N60UFDTU |
|
Виробник: onsemi
Description: IGBT 600V 80A 195W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 23ns/90ns
Switching Energy: 570µJ (on), 590µJ (off)
Test Condition: 300V, 40A, 5Ohm, 15V
Gate Charge: 175 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 195 W
Description: IGBT 600V 80A 195W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 23ns/90ns
Switching Energy: 570µJ (on), 590µJ (off)
Test Condition: 300V, 40A, 5Ohm, 15V
Gate Charge: 175 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 195 W
товару немає в наявності
В кошику
од. на суму грн.
| ML4812CP |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 12V ~ 18V
Mode: Critical Conduction (CRM)
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Current - Startup: 800 µA
Description: IC PFC CTRLR CRM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 12V ~ 18V
Mode: Critical Conduction (CRM)
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Current - Startup: 800 µA
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| HUFA75652G3 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 515W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 515W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V
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| FGA50N60LS |
|
Виробник: onsemi
Description: IGBT 600V 100A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 54ns/146ns
Switching Energy: 1.1mJ (on), 3.2mJ (off)
Test Condition: 300V, 50A, 5.9Ohm, 15V
Gate Charge: 167 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 240 W
Description: IGBT 600V 100A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 54ns/146ns
Switching Energy: 1.1mJ (on), 3.2mJ (off)
Test Condition: 300V, 50A, 5.9Ohm, 15V
Gate Charge: 167 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 240 W
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| FGA25N120ANTU |
|
Виробник: onsemi
Description: IGBT NPT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
Description: IGBT NPT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
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| FQA170N06 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 170A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 85A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 25 V
Description: MOSFET N-CH 60V 170A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 85A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9350 pF @ 25 V
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| FQA160N08 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 160A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 80V 160A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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| HUF75652G3 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 515W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V
Description: MOSFET N-CH 100V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 515W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 475 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7585 pF @ 25 V
на замовлення 188 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 760.00 грн |
| 30+ | 435.28 грн |
| 120+ | 370.27 грн |
| FOD0738R2 |
|
Виробник: onsemi
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
Description: OPTOISO 2.5KV 2CH PUSH PULL 8SO
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| ML4821CSX |
|
Виробник: onsemi
Description: IC PFC CTR AVER CURR 1MHZ 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 12V ~ 18V
Frequency - Switching: 1MHz
Mode: Average Current
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Current - Startup: 600 µA
Description: IC PFC CTR AVER CURR 1MHZ 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 12V ~ 18V
Frequency - Switching: 1MHz
Mode: Average Current
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Current - Startup: 600 µA
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| ML4824CS1 |
|
Виробник: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
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| ML4824CS1X |
|
Виробник: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
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| HGTG18N120BND |
|
Виробник: onsemi
Description: IGBT NPT 1200V 54A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 1.9mJ (on), 1.8mJ (off)
Test Condition: 960V, 18A, 3Ohm, 15V
Gate Charge: 165 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 390 W
Description: IGBT NPT 1200V 54A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 1.9mJ (on), 1.8mJ (off)
Test Condition: 960V, 18A, 3Ohm, 15V
Gate Charge: 165 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 390 W
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| FJH1100_T50R |
|
Виробник: onsemi
Description: DIODE GEN PURP 15V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 pA @ 15 V
Description: DIODE GEN PURP 15V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 pA @ 15 V
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| FJH1102 |
|
Виробник: onsemi
Description: DIODE STANDARD 25V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 pA @ 25 V
Description: DIODE STANDARD 25V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 pA @ 25 V
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| FJH1100 |
|
Виробник: onsemi
Description: DIODE GEN PURP 15V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 pA @ 15 V
Description: DIODE GEN PURP 15V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 pA @ 15 V
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| FGL60N100DTU |
|
Виробник: onsemi
Description: IGBT TRENCH 1000V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 176 W
Description: IGBT TRENCH 1000V 60A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.5 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: Trench
Gate Charge: 230 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 176 W
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| MM74C922WM |
|
Виробник: onsemi
Description: IC ENCODER 16-KEY 1 X 8:4 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:4
Type: 16-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Description: IC ENCODER 16-KEY 1 X 8:4 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:4
Type: 16-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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| MM74C922WMX |
|
Виробник: onsemi
Description: IC ENCODER 16-KEY 1 X 8:4 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:4
Type: 16-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Description: IC ENCODER 16-KEY 1 X 8:4 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:4
Type: 16-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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| MM74C923WMX |
|
Виробник: onsemi
Description: IC ENCODER 20-KEY 1 X 9:4 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 9:4
Type: 20-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
Description: IC ENCODER 20-KEY 1 X 9:4 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 9:4
Type: 20-Key Encoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Independent Circuits: 1
Current - Output High, Low: 15mA, 16mA
Voltage Supply Source: Single Supply
Supplier Device Package: 20-SOIC
Part Status: Obsolete
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| ML4824IS1 |
|
Виробник: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
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| ML4824CS2X |
|
Виробник: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
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| ML4824IS1X |
|
Виробник: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
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| ML4824CS2 |
|
Виробник: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 10.5V ~ 13.2V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 700 µA
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| ML4812IQ |
|
Виробник: onsemi
Description: IC PFC CTRLR CRM 20PLCC
Packaging: Tube
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Voltage - Supply: 12V ~ 18V
Mode: Critical Conduction (CRM)
Supplier Device Package: 20-PLCC (9x9)
Part Status: Obsolete
Current - Startup: 800 µA
Description: IC PFC CTRLR CRM 20PLCC
Packaging: Tube
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Voltage - Supply: 12V ~ 18V
Mode: Critical Conduction (CRM)
Supplier Device Package: 20-PLCC (9x9)
Part Status: Obsolete
Current - Startup: 800 µA
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| FQL40N50F |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 40A TO264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Description: MOSFET N-CH 500V 40A TO264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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| FQL40N50 |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 40A TO264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Description: MOSFET N-CH 500V 40A TO264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-264-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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| SGL160N60UFTU |
|
Виробник: onsemi
Description: IGBT 600V 160A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 80A
Supplier Device Package: TO-264-3
Td (on/off) @ 25°C: 40ns/90ns
Switching Energy: 2.5mJ (on), 1.76mJ (off)
Test Condition: 300V, 80A, 3.9Ohm, 15V
Gate Charge: 345 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 250 W
Description: IGBT 600V 160A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 80A
Supplier Device Package: TO-264-3
Td (on/off) @ 25°C: 40ns/90ns
Switching Energy: 2.5mJ (on), 1.76mJ (off)
Test Condition: 300V, 80A, 3.9Ohm, 15V
Gate Charge: 345 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 250 W
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| HGTG20N60C3D |
|
Виробник: onsemi
Description: IGBT 600V 45A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 28ns/151ns
Switching Energy: 500µJ (on), 500µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 91 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 164 W
Description: IGBT 600V 45A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 28ns/151ns
Switching Energy: 500µJ (on), 500µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 91 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 164 W
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| SGL160N60UFDTU |
|
Виробник: onsemi
Description: IGBT 600V 160A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 80A
Supplier Device Package: TO-264-3
Td (on/off) @ 25°C: 40ns/90ns
Switching Energy: 2.5mJ (on), 1.76mJ (off)
Test Condition: 300V, 80A, 3.9Ohm, 15V
Gate Charge: 345 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 250 W
Description: IGBT 600V 160A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 80A
Supplier Device Package: TO-264-3
Td (on/off) @ 25°C: 40ns/90ns
Switching Energy: 2.5mJ (on), 1.76mJ (off)
Test Condition: 300V, 80A, 3.9Ohm, 15V
Gate Charge: 345 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 250 W
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| SCAN182245AMTDX |
|
Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 56TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 9
Current - Output High, Low: 32mA, 15mA
Supplier Device Package: 56-TSSOP
Part Status: Obsolete
Description: IC TXRX NON-INVERT 5.5V 56TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 9
Current - Output High, Low: 32mA, 15mA
Supplier Device Package: 56-TSSOP
Part Status: Obsolete
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| SCAN182373ASSCX |
|
Виробник: onsemi
Description: IC TRANSPARENT LATCH 8BIT 56SSOP
Description: IC TRANSPARENT LATCH 8BIT 56SSOP
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| SCAN182245ASSCX |
|
Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 56SSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 9
Current - Output High, Low: 32mA, 15mA
Supplier Device Package: 56-SSOP
Part Status: Obsolete
Description: IC TXRX NON-INVERT 5.5V 56SSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 9
Current - Output High, Low: 32mA, 15mA
Supplier Device Package: 56-SSOP
Part Status: Obsolete
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| FSAM15SH60 |
|
Виробник: onsemi
Description: IC SMART POWER MOD 15A SPM32-AA
Description: IC SMART POWER MOD 15A SPM32-AA
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| FSBS10SH60 |
Виробник: onsemi
Description: IC SMART POWER MOD 10A SPM27-BA
Packaging: Tube
Package / Case: Power Module
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 10 A
Voltage: 600 V
Description: IC SMART POWER MOD 10A SPM27-BA
Packaging: Tube
Package / Case: Power Module
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 10 A
Voltage: 600 V
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| FF1N30HS60DD |
|
Виробник: onsemi
Description: DIODE MOD AVAL 600V 30A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE MOD AVAL 600V 30A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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| FSAM10SH60 |
|
Виробник: onsemi
Description: IC SMART POWER MOD 10A SPM32-AA
Description: IC SMART POWER MOD 10A SPM32-AA
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| HGT1N40N60A4D | |
|
Виробник: onsemi
Description: IGBT MOD 600V 110A 298W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 298 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MOD 600V 110A 298W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 298 W
Current - Collector Cutoff (Max): 250 µA
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| FMS6G10US60S |
|
Виробник: onsemi
Description: IGBT MODULE 600V 10A 66W 25PMAA
Packaging: Box
Package / Case: 25PM-AA
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: 25PM-AA
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 66 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 710 pF @ 30 V
Description: IGBT MODULE 600V 10A 66W 25PMAA
Packaging: Box
Package / Case: 25PM-AA
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: 25PM-AA
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 66 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 710 pF @ 30 V
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| FMS6G20US60S |
|
Виробник: onsemi
Description: IGBT MODULE 600V 20A 89W 25PMAA
Packaging: Box
Package / Case: 25PM-AA
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: 25PM-AA
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.277 nF @ 30 V
Description: IGBT MODULE 600V 20A 89W 25PMAA
Packaging: Box
Package / Case: 25PM-AA
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: 25PM-AA
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.277 nF @ 30 V
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| FMS6G20US60 |
|
Виробник: onsemi
Description: IGBT MODULE 600V 20A 89W 25PMAA
Packaging: Box
Package / Case: 25PM-AA
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: 25PM-AA
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.277 nF @ 30 V
Description: IGBT MODULE 600V 20A 89W 25PMAA
Packaging: Box
Package / Case: 25PM-AA
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: 25PM-AA
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.277 nF @ 30 V
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| FMS7G20US60 |
|
Виробник: onsemi
Description: IGBT MODULE 600V 20A 89W 25PMAA
Packaging: Box
Package / Case: 25PM-AA
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: 25PM-AA
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.277 nF @ 30 V
Description: IGBT MODULE 600V 20A 89W 25PMAA
Packaging: Box
Package / Case: 25PM-AA
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: 25PM-AA
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 89 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.277 nF @ 30 V
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| FMG2G100US60 |
|
Виробник: onsemi
Description: IGBT MODULE 600V 100A 400W 7PMGA
Packaging: Bulk
Package / Case: 7PM-GA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: 7PM-GA
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 10.84 nF @ 30 V
Description: IGBT MODULE 600V 100A 400W 7PMGA
Packaging: Bulk
Package / Case: 7PM-GA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: 7PM-GA
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 10.84 nF @ 30 V
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| FMG2G200US60 |
|
Виробник: onsemi
Description: IGBT MODULE 600V 200A 695W 7PMHA
Packaging: Box
Package / Case: 7PM-HA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: 7PM-HA
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MODULE 600V 200A 695W 7PMHA
Packaging: Box
Package / Case: 7PM-HA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: 7PM-HA
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 250 µA
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| FMG2G150US60E |
|
Виробник: onsemi
Description: IGBT MODULE 600V 150A 500W 7PMGA
Packaging: Bulk
Package / Case: 7PM-GA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: 7PM-GA
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.84 nF @ 30 V
Description: IGBT MODULE 600V 150A 500W 7PMGA
Packaging: Bulk
Package / Case: 7PM-GA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: 7PM-GA
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.84 nF @ 30 V
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| FMG2G150US60 |
|
Виробник: onsemi
Description: IGBT MODULE 600V 150A 595W 7PMHA
Packaging: Box
Package / Case: 7PM-HA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: 7PM-HA
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MODULE 600V 150A 595W 7PMHA
Packaging: Box
Package / Case: 7PM-HA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: 7PM-HA
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 595 W
Current - Collector Cutoff (Max): 250 µA
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| FMG2G300US60E |
|
Виробник: onsemi
Description: IGBT MODULE 600V 300A 892W 7PMHA
Packaging: Box
Package / Case: 7PM-HA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: 7PM-HA
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 892 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MODULE 600V 300A 892W 7PMHA
Packaging: Box
Package / Case: 7PM-HA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: 7PM-HA
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 892 W
Current - Collector Cutoff (Max): 250 µA
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| FMG2G300US60 |
|
Виробник: onsemi
Description: IGBT MODULE 600V 300A 892W 7PMIA
Packaging: Bulk
Package / Case: 7PM-IA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: 7PM-IA
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 892 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MODULE 600V 300A 892W 7PMIA
Packaging: Bulk
Package / Case: 7PM-IA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: 7PM-IA
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 892 W
Current - Collector Cutoff (Max): 250 µA
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| FMG2G400US60 |
|
Виробник: onsemi
Description: IGBT MOD 600V 400A 1136W 7PMIA
Packaging: Box
Package / Case: 7PM-IA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: 7PM-IA
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MOD 600V 400A 1136W 7PMIA
Packaging: Box
Package / Case: 7PM-IA
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: 7PM-IA
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 250 µA
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од. на суму грн.
| MBRS4201T3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 200V 4A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE SCHOTTKY 200V 4A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 39.82 грн |
| FOD8523SD |
|
Виробник: onsemi
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 4174 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.88 грн |
| 10+ | 66.44 грн |
| 100+ | 49.70 грн |
| 500+ | 39.69 грн |
| FPF2124 |
|
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 72.44 грн |
| 6000+ | 67.17 грн |
| FFP30UP20DNTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 200V 15A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE ARRAY GP 200V 15A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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| FFPF15UP20STU |
|
Виробник: onsemi
Description: DIODE GEN PURP 200V 15A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE GEN PURP 200V 15A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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