| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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NSVMUN5213DW1T3G | onsemi |
 Description: TRANS NPN 50V DUAL BIPO SC88-6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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NTMFD4C85NT3G | onsemi |
Description: MOSFET 2N-CH 30V 15.4A 8DFN Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A Drain to Source Voltage (Vdss): 30V Power - Max: 1.13W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTMFD4C86NT3G | onsemi |
Description: MOSFET 2N-CH 30V 11.3A 8DFN Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A Drain to Source Voltage (Vdss): 30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTMFD4C87NT3G | onsemi |
Description: MOSFET 2N-CH 30V 11.7A 8DFN Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTMFD4C88NT3G | onsemi |
Description: MOSFET 2N-CH 30V 11.7A 8DFN Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTMFS4982NFT3G | onsemi |
Description: MOSFET N-CH 30V 26.5A/207A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTMFS4C03NT3G | onsemi |
Description: MOSFET N-CH 30V 30A/136A 5DFN |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NTMFS4H01NFT3G | onsemi |
Description: MOSFET N-CH 25V 54A/334A 5DFN |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NTMFS4H01NT3G | onsemi |
Description: MOSFET N-CH 25V 54A/334A 5DFN |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NTNS3190NZT5G | onsemi |
Description: MOSFET N-CH 20V 224MA 3XLLGA Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Obsolete Supplier Device Package: 3-XLLGA (0.62x0.62) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 224mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 120mW (Ta) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTS10100EMFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 10A 5DFN Current - Reverse Leakage @ Vr: 70 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTS10100MFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 10A 5DFN Current - Reverse Leakage @ Vr: 70 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTS10120EMFST3G | onsemi |
Description: DIODE SCHOTTKY 120V 10A 5DFN Current - Reverse Leakage @ Vr: 30 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 120 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NTS10120MFST3G | onsemi |
Description: DIODE SCHOTTKY 120V 10A 5DFN Current - Reverse Leakage @ Vr: 30 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 120 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NTS1045MFST3G | onsemi |
Description: DIODE SCHOTTKY 45V 10A 5DFN Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 10A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 120 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NTS12100EMFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 12A 5DFN |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NTS12100MFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 12A 5DFN Current - Reverse Leakage @ Vr: 55 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 12 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 12A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTS12120EMFST3G | onsemi |
Description: DIODE SCHOTTKY 120V 12A 5DFN |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NTS12120MFST1G | onsemi |
Description: DIODE SCHOTTKY 120V 12A 5DFN Current - Reverse Leakage @ Vr: 55 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A Voltage - DC Reverse (Vr) (Max): 120 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 12A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTS12120MFST3G | onsemi |
Description: DIODE SCHOTTKY 120V 12A 5DFN Current - Reverse Leakage @ Vr: 55 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A Voltage - DC Reverse (Vr) (Max): 120 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 12A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NTS1245MFST3G | onsemi |
Description: DIODE SCHOTTKY 45V 12A 5DFN |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NTS1545MFST3G | onsemi |
Description: DIODE SCHOTTKY 45V 15A 5DFN Current - Reverse Leakage @ Vr: 120 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 15A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NTS260SFT3G | onsemi |
Description: DIODE SCHOTTKY 60V 2A SOD123FL Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 50 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTSB30U100CTT4G | onsemi |
Description: DIODE ARR SCHOTT 100V 15A D2PAK Current - Reverse Leakage @ Vr: 675 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTUD3174NZT5G | onsemi |
Description: MOSFET 2N-CH 20V 0.22A SOT963 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-963 Packaging: Tape & Reel (TR) Supplier Device Package: SOT-963 Vgs(th) (Max) @ Id: 1V @ 100µA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 125mW (Ta) |
на замовлення 56000 шт: термін постачання 21-31 дні (днів) |
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NVD6495NLT4G-VF01 | onsemi |
Description: MOSFET N-CH 100V 25A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Qualification: AEC-Q101 Grade: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NVMFS4C01NT3G | onsemi |
Description: MOSFET N-CH 30V 49A/319A 5DFN Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.84W (Ta), 161W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NVMFS4C01NWFT3G | onsemi |
Description: MOSFET N-CH 30V 49A/319A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Power Dissipation (Max): 3.84W (Ta), 161W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NVMFS5C404NLT3G | onsemi |
Description: MOSFET N-CH 40V 49A/352A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NVMFS5C404NLWFT3G | onsemi |
Description: MOSFET N-CH 40V 49A/352A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NVMFS5C410NLT3G | onsemi |
Description: MOSFET N-CH 40V 48A/315A 5DFN Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NVMFS5C410NLWFT3G | onsemi |
Description: MOSFET N-CH 40V 48A/315A 5DFN Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 167W (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NVMFS5C612NLT3G | onsemi |
Description: MOSFET N-CH 60V 36A/235A 5DFN Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V |
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NVMFS5C612NLWFT3G | onsemi |
Description: MOSFET N-CH 60V 36A/235A 5DFN Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V |
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PCA9654EDR2G | onsemi |
Description: IC XPNDR 100KHZ I2C 16SOIC Part Status: Active Supplier Device Package: 16-SOIC Interrupt Output: Yes Clock Frequency: 100 kHz Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Number of I/O: 8 Interface: I2C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Features: POR Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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PCA9654EDTR2G | onsemi |
Description: IC XPNDR 100KHZ I2C 16TSSOP Part Status: Active Supplier Device Package: 16-TSSOP Interrupt Output: Yes Clock Frequency: 100 kHz Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Number of I/O: 8 Interface: I2C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Features: POR Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SC431ILPRAG | onsemi |
Description: IC VREF SHUNT ADJ 2.2% TO92 Current - Cathode: 100 mA Part Status: Obsolete Voltage - Output (Min/Fixed): 2.495V Supplier Device Package: TO-92 (TO-226) Operating Temperature: -40°C ~ 85°C (TA) Reference Type: Shunt Mounting Type: Through Hole Output Type: Adjustable Temperature Coefficient: 50ppm/°C Typical Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Tolerance: ±2.2% Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Voltage - Output (Max): 36 V Current - Output: 40 µA |
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| SCY99102BDR2G | onsemi |
Description: IC PFC CTRLR Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||
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SFT1452-TL-W | onsemi |
Description: MOSFET N-CH 250V 3A DPAK/TP-FA Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK/TP-FA Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 1W (Ta), 26W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 700 шт В кошику од. на суму грн. | ||||||||||
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SFT1458-TL-H | onsemi |
Description: MOSFET N-CH 600V 1A DPAK/TP-FA Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK/TP-FA Power Dissipation (Max): 1W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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SMMBD301LT3G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOT23-3 Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 200 nA @ 25 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 mA Voltage - DC Reverse (Vr) (Max): 30 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: SOT-23-3 (TO-236) Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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SZESD7451N2T5G | onsemi |
Description: TVS DIODE 3.3VWM 2XDFN Qualification: AEC-Q101 Grade: Automotive Package / Case: 2-XDFN Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Voltage - Breakdown (Min): 6V (Typ) Bidirectional Channels: 1 Supplier Device Package: 2-XDFN (1x0.6) (SOD-882) Voltage - Reverse Standoff (Typ): 3.3V (Max) Capacitance @ Frequency: 0.25pF @ 1MHz Applications: RF Antenna Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SZESD7461N2T5G | onsemi |
Description: TVS DIODE 16VWM 39VC 2XDFN Qualification: AEC-Q101 Grade: Automotive Voltage - Reverse Standoff (Typ): 16V (Max) Current - Peak Pulse (10/1000µs): 16A (100ns) Capacitance @ Frequency: 0.3pF @ 1MHz Applications: RF Antenna Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Tape & Reel (TR) Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 39V Voltage - Breakdown (Min): 16.5V Bidirectional Channels: 1 Supplier Device Package: 2-XDFN (1x0.6) (SOD-882) |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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SZESD8451MUT5G | onsemi |
Description: TVS DIODE 3.3VWM 19VC 2X3DFN Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 19V Voltage - Breakdown (Min): 5.5V Bidirectional Channels: 1 Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Voltage - Reverse Standoff (Typ): 3.3V (Max) Current - Peak Pulse (10/1000µs): 16A (100ns) Capacitance @ Frequency: 0.2pF @ 1MHz Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Tape & Reel (TR) |
товару немає в наявності |
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SZESD8451N2T5G | onsemi |
Description: TVS DIODE 3.3VWM 19VC 2XDFN Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 19V Voltage - Breakdown (Min): 5.5V Bidirectional Channels: 1 Supplier Device Package: 2-XDFN (1x0.6) (SOD-882) Voltage - Reverse Standoff (Typ): 3.3V (Max) Current - Peak Pulse (10/1000µs): 16A (100ns) Capacitance @ Frequency: 0.2pF @ 1MHz Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Tape & Reel (TR) |
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SZESD9B3.3ST5G | onsemi |
Description: TVS DIODE 3.3VWM 11.5VC SOD923 Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Frequency: 15pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: SOD-923 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 11.5V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||
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SZESD9L3.3ST5G | onsemi |
Description: TVS DIODE 3.3VWM 9VC SOD923 Part Status: Obsolete Power Line Protection: No Voltage - Clamping (Max) @ Ipp: 9V Voltage - Breakdown (Min): 4.8V Unidirectional Channels: 1 Supplier Device Package: SOD-923 Voltage - Reverse Standoff (Typ): 3.3V (Max) Capacitance @ Frequency: 0.5pF @ 1MHz Mounting Type: Surface Mount Package / Case: SOD-923 Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||
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SZHBL5006P2T5G | onsemi |
Description: LIGHT PROTECT LED SHUNT 7V SMD Qualification: AEC-Q101 Voltage - Clamping: 11.2 V Number of Circuits: 1 Grade: Automotive Supplier Device Package: SOD-923 Technology: LED Shunt Applications: LED Protection Mounting Type: Surface Mount Voltage: 7V Package / Case: SOD-923 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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EMH2418R-TL-H | onsemi |
Description: MOSFET 2N-CH 24V 9A SOT383FL Supplier Device Package: SOT-383FL, EMH8 Vgs(th) (Max) @ Id: 1.3V @ 1mA FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A Drain to Source Voltage (Vdss): 24V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||
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EMH2417R-TL-H | onsemi |
Description: MOSFET 2N-CH 12V 11A EMH8 Part Status: Obsolete Supplier Device Package: SOT-383FL, EMH8 Vgs(th) (Max) @ Id: 1.3V @ 1mA FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 11A Drain to Source Voltage (Vdss): 12V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||
| NSR0630P2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 600MA Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 200 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -55°C ~ 125°C Current - Average Rectified (Io): 600mA |
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SCH1345-TL-H | onsemi |
Description: MOSFET P-CH 20V 4.5A SOT563/SCH6 Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: SOT-563/SCH6 Vgs(th) (Max) @ Id: 1.3V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
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1HN04CH-TL-W | onsemi | Description: MOSFET N-CH 100V 270MA 3CPH |
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1HP04CH-TL-W | onsemi |
Description: MOSFET P-CH 100V 170MA 3CPH Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: 3-CPH Vgs(th) (Max) @ Id: 2.6V @ 100µA Rds On (Max) @ Id, Vgs: 18Ohm @ 80mA, 10V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||
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5HN01C-TB-E | onsemi |
Description: MOSFET N-CH 50V 100MA CP3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 100mA (Tj) Supplier Device Package: SMCP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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5HN01C-TB-H | onsemi |
Description: MOSFET N-CH 50V 100MA SMD Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SMCP |
товару немає в наявності |
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5HN01M-TL-E | onsemi |
Description: MOSFET N-CH 50V 100MA 3MCP Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: MCP Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | ||||||||||
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5HN01M-TL-H | onsemi |
Description: MOSFET N-CH 50V 100MA 3MCP Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: MCP Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
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5HN01SS-TL-E | onsemi |
Description: MOSFET N-CH 50V 100MA SSFP3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Supplier Device Package: 3-SSFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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5HN01SS-TL-H | onsemi |
Description: MOSFET N-CH 50V 100MA SMD Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Supplier Device Package: 3-SSFP |
товару немає в наявності |
В кошику од. на суму грн. |
| NSVMUN5213DW1T3G |
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Виробник: onsemi
Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 50V DUAL BIPO SC88-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 3.46 грн |
| NTMFD4C85NT3G |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 15.4A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.13W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 15.4A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.13W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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В кошику
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| NTMFD4C86NT3G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 11.3A 8DFN
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
Drain to Source Voltage (Vdss): 30V
Description: MOSFET 2N-CH 30V 11.3A 8DFN
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
Drain to Source Voltage (Vdss): 30V
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| NTMFD4C87NT3G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| NTMFD4C88NT3G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| NTMFS4982NFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 26.5A/207A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 26.5A/207A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NTMFS4C03NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 30A/136A 5DFN
Description: MOSFET N-CH 30V 30A/136A 5DFN
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Мінімальне замовлення: 5000 шт
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| NTMFS4H01NFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 54A/334A 5DFN
Description: MOSFET N-CH 25V 54A/334A 5DFN
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Мінімальне замовлення: 5000 шт
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| NTMFS4H01NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 54A/334A 5DFN
Description: MOSFET N-CH 25V 54A/334A 5DFN
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Мінімальне замовлення: 5000 шт
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| NTNS3190NZT5G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 224MA 3XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 3-XLLGA (0.62x0.62)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 120mW (Ta)
Description: MOSFET N-CH 20V 224MA 3XLLGA
Input Capacitance (Ciss) (Max) @ Vds: 15.8 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 3-XLLGA (0.62x0.62)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 120mW (Ta)
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| NTS10100EMFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 10A 5DFN
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NTS10100MFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 10A 5DFN
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 10A 5DFN
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NTS10120EMFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 10A 5DFN
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 120V 10A 5DFN
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NTS10120MFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 10A 5DFN
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 120V 10A 5DFN
Current - Reverse Leakage @ Vr: 30 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NTS1045MFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 10A 5DFN
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Description: DIODE SCHOTTKY 45V 10A 5DFN
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
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Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NTS12100EMFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 12A 5DFN
Description: DIODE SCHOTTKY 100V 12A 5DFN
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NTS12100MFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 100V 12A 5DFN
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 12A 5DFN
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NTS12120EMFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 12A 5DFN
Description: DIODE SCHOTTKY 120V 12A 5DFN
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NTS12120MFST1G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 12A 5DFN
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 120V 12A 5DFN
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NTS12120MFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 120V 12A 5DFN
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 120V 12A 5DFN
Current - Reverse Leakage @ Vr: 55 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NTS1245MFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 12A 5DFN
Description: DIODE SCHOTTKY 45V 12A 5DFN
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NTS1545MFST3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 15A 5DFN
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 15A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 45V 15A 5DFN
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 15A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NTS260SFT3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
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| NTSB30U100CTT4G |
|
Виробник: onsemi
Description: DIODE ARR SCHOTT 100V 15A D2PAK
Current - Reverse Leakage @ Vr: 675 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 100V 15A D2PAK
Current - Reverse Leakage @ Vr: 675 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| NTUD3174NZT5G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 0.22A SOT963
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-963
Vgs(th) (Max) @ Id: 1V @ 100µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 125mW (Ta)
Description: MOSFET 2N-CH 20V 0.22A SOT963
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-963
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-963
Vgs(th) (Max) @ Id: 1V @ 100µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 125mW (Ta)
на замовлення 56000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 16.50 грн |
| 16000+ | 14.82 грн |
| 24000+ | 14.80 грн |
| NVD6495NLT4G-VF01 |
|
Виробник: onsemi
Description: MOSFET N-CH 100V 25A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 25A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| NVMFS4C01NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 49A/319A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 49A/319A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 5000 шт
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| NVMFS4C01NWFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
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| NVMFS5C404NLT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Qualification: AEC-Q101
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Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NVMFS5C404NLWFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 49A/352A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Qualification: AEC-Q101
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| NVMFS5C410NLT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 48A/315A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 48A/315A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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| NVMFS5C410NLWFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 48A/315A 5DFN
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Description: MOSFET N-CH 40V 48A/315A 5DFN
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 315A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
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| NVMFS5C612NLT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 36A/235A 5DFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Description: MOSFET N-CH 60V 36A/235A 5DFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
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| NVMFS5C612NLWFT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 36A/235A 5DFN
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Description: MOSFET N-CH 60V 36A/235A 5DFN
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
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| PCA9654EDR2G |
|
Виробник: onsemi
Description: IC XPNDR 100KHZ I2C 16SOIC
Part Status: Active
Supplier Device Package: 16-SOIC
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 8
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Features: POR
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC XPNDR 100KHZ I2C 16SOIC
Part Status: Active
Supplier Device Package: 16-SOIC
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 8
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Features: POR
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 2500 шт
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од. на суму грн.
| PCA9654EDTR2G |
|
Виробник: onsemi
Description: IC XPNDR 100KHZ I2C 16TSSOP
Part Status: Active
Supplier Device Package: 16-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 8
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC XPNDR 100KHZ I2C 16TSSOP
Part Status: Active
Supplier Device Package: 16-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 8
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 109.35 грн |
| SC431ILPRAG |
|
Виробник: onsemi
Description: IC VREF SHUNT ADJ 2.2% TO92
Current - Cathode: 100 mA
Part Status: Obsolete
Voltage - Output (Min/Fixed): 2.495V
Supplier Device Package: TO-92 (TO-226)
Operating Temperature: -40°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Through Hole
Output Type: Adjustable
Temperature Coefficient: 50ppm/°C Typical
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Tolerance: ±2.2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Voltage - Output (Max): 36 V
Current - Output: 40 µA
Description: IC VREF SHUNT ADJ 2.2% TO92
Current - Cathode: 100 mA
Part Status: Obsolete
Voltage - Output (Min/Fixed): 2.495V
Supplier Device Package: TO-92 (TO-226)
Operating Temperature: -40°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Through Hole
Output Type: Adjustable
Temperature Coefficient: 50ppm/°C Typical
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Tolerance: ±2.2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Voltage - Output (Max): 36 V
Current - Output: 40 µA
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| SFT1452-TL-W |
|
Виробник: onsemi
Description: MOSFET N-CH 250V 3A DPAK/TP-FA
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK/TP-FA
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1W (Ta), 26W (Tc)
Description: MOSFET N-CH 250V 3A DPAK/TP-FA
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK/TP-FA
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1W (Ta), 26W (Tc)
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Мінімальне замовлення: 700 шт
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| SFT1458-TL-H |
Виробник: onsemi
Description: MOSFET N-CH 600V 1A DPAK/TP-FA
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK/TP-FA
Power Dissipation (Max): 1W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 1A DPAK/TP-FA
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK/TP-FA
Power Dissipation (Max): 1W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| SMMBD301LT3G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 200MA SOT23-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 10000 шт
В кошику
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| SZESD7451N2T5G |
|
Виробник: onsemi
Description: TVS DIODE 3.3VWM 2XDFN
Qualification: AEC-Q101
Grade: Automotive
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V (Typ)
Bidirectional Channels: 1
Supplier Device Package: 2-XDFN (1x0.6) (SOD-882)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Capacitance @ Frequency: 0.25pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Description: TVS DIODE 3.3VWM 2XDFN
Qualification: AEC-Q101
Grade: Automotive
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 6V (Typ)
Bidirectional Channels: 1
Supplier Device Package: 2-XDFN (1x0.6) (SOD-882)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Capacitance @ Frequency: 0.25pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 9.12 грн |
| SZESD7461N2T5G |
Виробник: onsemi
Description: TVS DIODE 16VWM 39VC 2XDFN
Qualification: AEC-Q101
Grade: Automotive
Voltage - Reverse Standoff (Typ): 16V (Max)
Current - Peak Pulse (10/1000µs): 16A (100ns)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 39V
Voltage - Breakdown (Min): 16.5V
Bidirectional Channels: 1
Supplier Device Package: 2-XDFN (1x0.6) (SOD-882)
Description: TVS DIODE 16VWM 39VC 2XDFN
Qualification: AEC-Q101
Grade: Automotive
Voltage - Reverse Standoff (Typ): 16V (Max)
Current - Peak Pulse (10/1000µs): 16A (100ns)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 39V
Voltage - Breakdown (Min): 16.5V
Bidirectional Channels: 1
Supplier Device Package: 2-XDFN (1x0.6) (SOD-882)
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 9.26 грн |
| 16000+ | 8.23 грн |
| 24000+ | 7.89 грн |
| 40000+ | 7.04 грн |
| 56000+ | 7.01 грн |
| SZESD8451MUT5G |
|
Виробник: onsemi
Description: TVS DIODE 3.3VWM 19VC 2X3DFN
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 5.5V
Bidirectional Channels: 1
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 16A (100ns)
Capacitance @ Frequency: 0.2pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Description: TVS DIODE 3.3VWM 19VC 2X3DFN
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 5.5V
Bidirectional Channels: 1
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 16A (100ns)
Capacitance @ Frequency: 0.2pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
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| SZESD8451N2T5G |
|
Виробник: onsemi
Description: TVS DIODE 3.3VWM 19VC 2XDFN
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 5.5V
Bidirectional Channels: 1
Supplier Device Package: 2-XDFN (1x0.6) (SOD-882)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 16A (100ns)
Capacitance @ Frequency: 0.2pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Description: TVS DIODE 3.3VWM 19VC 2XDFN
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 19V
Voltage - Breakdown (Min): 5.5V
Bidirectional Channels: 1
Supplier Device Package: 2-XDFN (1x0.6) (SOD-882)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Current - Peak Pulse (10/1000µs): 16A (100ns)
Capacitance @ Frequency: 0.2pF @ 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
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| SZESD9B3.3ST5G |
|
Виробник: onsemi
Description: TVS DIODE 3.3VWM 11.5VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-923
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 11.5VC SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SOD-923
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| SZESD9L3.3ST5G |
|
Виробник: onsemi
Description: TVS DIODE 3.3VWM 9VC SOD923
Part Status: Obsolete
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9V
Voltage - Breakdown (Min): 4.8V
Unidirectional Channels: 1
Supplier Device Package: SOD-923
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Capacitance @ Frequency: 0.5pF @ 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-923
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TVS DIODE 3.3VWM 9VC SOD923
Part Status: Obsolete
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 9V
Voltage - Breakdown (Min): 4.8V
Unidirectional Channels: 1
Supplier Device Package: SOD-923
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Capacitance @ Frequency: 0.5pF @ 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-923
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| SZHBL5006P2T5G |
|
Виробник: onsemi
Description: LIGHT PROTECT LED SHUNT 7V SMD
Qualification: AEC-Q101
Voltage - Clamping: 11.2 V
Number of Circuits: 1
Grade: Automotive
Supplier Device Package: SOD-923
Technology: LED Shunt
Applications: LED Protection
Mounting Type: Surface Mount
Voltage: 7V
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
Description: LIGHT PROTECT LED SHUNT 7V SMD
Qualification: AEC-Q101
Voltage - Clamping: 11.2 V
Number of Circuits: 1
Grade: Automotive
Supplier Device Package: SOD-923
Technology: LED Shunt
Applications: LED Protection
Mounting Type: Surface Mount
Voltage: 7V
Package / Case: SOD-923
Packaging: Tape & Reel (TR)
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| EMH2418R-TL-H |
|
Виробник: onsemi
Description: MOSFET 2N-CH 24V 9A SOT383FL
Supplier Device Package: SOT-383FL, EMH8
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 24V 9A SOT383FL
Supplier Device Package: SOT-383FL, EMH8
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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| EMH2417R-TL-H |
|
Виробник: onsemi
Description: MOSFET 2N-CH 12V 11A EMH8
Part Status: Obsolete
Supplier Device Package: SOT-383FL, EMH8
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 12V 11A EMH8
Part Status: Obsolete
Supplier Device Package: SOT-383FL, EMH8
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 12V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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| NSR0630P2T5G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 600MA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Current - Average Rectified (Io): 600mA
Description: DIODE SCHOTTKY 30V 600MA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Current - Average Rectified (Io): 600mA
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| SCH1345-TL-H |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 4.5A SOT563/SCH6
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-563/SCH6
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 4.5A SOT563/SCH6
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-563/SCH6
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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| 1HN04CH-TL-W |
Виробник: onsemi
Description: MOSFET N-CH 100V 270MA 3CPH
Description: MOSFET N-CH 100V 270MA 3CPH
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| 1HP04CH-TL-W |
Виробник: onsemi
Description: MOSFET P-CH 100V 170MA 3CPH
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 3-CPH
Vgs(th) (Max) @ Id: 2.6V @ 100µA
Rds On (Max) @ Id, Vgs: 18Ohm @ 80mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 170MA 3CPH
Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 3-CPH
Vgs(th) (Max) @ Id: 2.6V @ 100µA
Rds On (Max) @ Id, Vgs: 18Ohm @ 80mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| 5HN01C-TB-E |
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA CP3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
Supplier Device Package: SMCP
Description: MOSFET N-CH 50V 100MA CP3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
Supplier Device Package: SMCP
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| 5HN01C-TB-H |
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA SMD
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SMCP
Description: MOSFET N-CH 50V 100MA SMD
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SMCP
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| 5HN01M-TL-E |
|
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3MCP
Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MCP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 50V 100MA 3MCP
Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MCP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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| 5HN01M-TL-H |
|
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3MCP
Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MCP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 50V 100MA 3MCP
Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MCP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| 5HN01SS-TL-E |
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA SSFP3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Description: MOSFET N-CH 50V 100MA SSFP3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
товару немає в наявності
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од. на суму грн.
| 5HN01SS-TL-H |
Виробник: onsemi
Description: MOSFET N-CH 50V 100MA SMD
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Description: MOSFET N-CH 50V 100MA SMD
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
товару немає в наявності
В кошику
од. на суму грн.