| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FGD3040G2-F085V | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Case: DPAK Mounting: SMD Type of transistor: IGBT Application: ignition systems Features of semiconductor devices: logic level Kind of package: reel; tape Gate charge: 21nC Gate-emitter voltage: ±10V Power dissipation: 150W Collector current: 25.6A Collector-emitter voltage: 400V Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGD3040G2-F085 | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Case: DPAK Mounting: SMD Type of transistor: IGBT Application: ignition systems Features of semiconductor devices: logic level Kind of package: reel; tape Gate charge: 21nC Gate-emitter voltage: ±10V Power dissipation: 150W Collector current: 25.6A Collector-emitter voltage: 400V Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGD3040G2-F085C | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level Case: DPAK Mounting: SMD Type of transistor: IGBT Application: ignition systems Features of semiconductor devices: logic level Kind of package: reel; tape Gate charge: 21nC Gate-emitter voltage: ±10V Power dissipation: 150W Collector current: 25.6A Collector-emitter voltage: 400V Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
BZX84C47LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
MOC3032M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs Type of optocoupler: optotriac Insulation voltage: 7.5kV Kind of output: triac Case: DIP6 Mounting: THT Number of channels: 1 Slew rate: 2kV/μs Manufacturer series: MOC303XM |
на замовлення 635 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
MOC3012M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; triac; DIP6; Ch: 1; MOC301XM Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: triac Case: DIP6 Mounting: THT Number of channels: 1 Manufacturer series: MOC301XM |
на замовлення 664 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
MOC3011M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC301XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 400V Kind of output: triac Case: DIP6 Trigger current: 60mA Mounting: THT Number of channels: 1 Max. off-state voltage: 3V Manufacturer series: MOC301XM |
на замовлення 149 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
FDA24N50 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 96A Power dissipation: 270W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
RFD16N06LESM9A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 90W Case: DPAK Gate-source voltage: ±8V On-state resistance: 47mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 137 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
RFD16N05SM9A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK Case: DPAK Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 80nC On-state resistance: 47mΩ Gate-source voltage: ±20V Drain current: 16A Drain-source voltage: 50V Power dissipation: 72W Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC1G04DBVT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 39000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
| MC74HC1G04DFT1G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
| MC74HC1G04DFT2G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
| NC7SZ04L6X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SIP6; 7SZ; -40÷85°C; 2uA Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 1 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SIP6 Manufacturer series: 7SZ Operating temperature: -40...85°C Quiescent current: 2µA |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
|
MMSZ18T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxT1G |
на замовлення 5260 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| SZMMSZ18T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MMSZ5235BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZMMSZ5235BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MPSA29-D26Z | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Current gain: 10k Mounting: THT Kind of package: reel; tape Frequency: 125MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
MPSA29 | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP1032AMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback Mounting: SMD Topology: flyback Type of integrated circuit: PMIC Operating temperature: -40...125°C Number of channels: 1 On-state resistance: 4.2Ω Operating voltage: 7.55...16V DC Frequency: 275...960kHz Case: WDFN8 Kind of integrated circuit: AC/DC switcher; PWM controller |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MMBTH81 | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 50mA Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 600MHz |
на замовлення 1737 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| NSVMMBTH81LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 50mA Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
FSQ0765RSUDTU | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V Output voltage: 650V Power: 70W Topology: flyback Mounting: THT Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller; resonant mode controller Case: TO220-6 Operating temperature: -25...85°C Number of channels: 1 On-state resistance: 1.6Ω Output current: 2.28A Operating voltage: 8...19V DC Input voltage: 85...265V Frequency: 66.7kHz |
на замовлення 318 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
FDP038AN06A0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| BSS138 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| HUFA75645S3S | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 75A; 310W; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 310W Case: TO263AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 198nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
FDP050AN06A0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 80nC On-state resistance: 11mΩ Drain current: 18A Gate-source voltage: ±20V Drain-source voltage: 60V Power dissipation: 245W Kind of channel: enhancement Type of transistor: N-MOSFET Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FDP054N10 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 144A; Idm: 576A; 263W; TO220-3 Case: TO220-3 Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 156nC On-state resistance: 5.5mΩ Drain current: 144A Gate-source voltage: ±20V Drain-source voltage: 100V Power dissipation: 263W Pulsed drain current: 576A Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
FQP8N80C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.1A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 45nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
NRVB0530T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Application: automotive industry Case: SOD123 Kind of package: reel; tape Mounting: SMD Type of diode: Schottky switching Semiconductor structure: single diode Max. forward voltage: 0.43V Load current: 0.5A Max. forward impulse current: 5.5A Max. off-state voltage: 30V |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| NCP1253BSN65T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 61...71kHz Mounting: SMD Case: TSOP6 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...25.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC34064D-5G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; SO8; Ch: 1 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: open drain Active logical level: low Case: SO8 Operating temperature: 0...70°C Mounting: SMD Integrated circuit features: manual reset; watchdog Manufacturer series: PRO Number of channels: 1 |
на замовлення 2201 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
| NCP1253BSN100T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.3...0.5A Frequency: 92...108kHz Mounting: SMD Case: TSOP6 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.8...25.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
BC818-40LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NSVBC818-40LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MMBD701LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 70V Load current: 10mA Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 0.5V Kind of package: reel; tape |
на замовлення 2052 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
MMBD7000LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape |
на замовлення 5490 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
MMBD1203 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Leakage current: 0.1mA Capacitance: 2pF Power dissipation: 0.35W Max. forward impulse current: 2A |
на замовлення 2870 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
MMBD1205 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Leakage current: 0.1mA Capacitance: 2pF Power dissipation: 0.35W Max. forward impulse current: 2A |
на замовлення 2797 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
MMBD1201 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Leakage current: 0.1mA Capacitance: 2pF Power dissipation: 0.35W Max. forward impulse current: 2A |
на замовлення 446 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
MMBD6050LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Leakage current: 0.1mA Capacitance: 5pF Power dissipation: 0.4W |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| MMBD452LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Semiconductor structure: double series Case: SOT23 Max. forward voltage: 0.6V Kind of package: reel; tape Capacitance: 1.5pF |
на замовлення 8990 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
|
MMBD6100LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Capacitance: 2.5pF Power dissipation: 0.225W Max. forward impulse current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
MMBD1504A | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Mounting: SMD Type of diode: switching Capacitance: 4pF Load current: 0.2A Power dissipation: 0.35W Max. forward impulse current: 2A Max. forward voltage: 1.15V Max. off-state voltage: 200V Case: SOT23 Kind of package: reel; tape Semiconductor structure: common cathode; double |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| MMBD4148 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Max. forward impulse current: 2A Capacitance: 4pF Power dissipation: 0.35W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MCH4020-TL-H | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 8V; 150mA; 400mW; SC82AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 8V Collector current: 0.15A Power dissipation: 0.4W Case: SC82AB Current gain: 60...150 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 13...16GHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
FDP047AN08A0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
6N139M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington CTR@If: 500%@1.6mA Case: DIP8 Turn-on time: 25µs Turn-off time: 60µs Slew rate: 2.5kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
6N139SDM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 5kV CTR@If: 500-1600%@1.6mA Case: Gull wing 8 Slew rate: 10kV/μs Manufacturer series: 6N139M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
6N137M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Transfer rate: 1Mbps Case: DIP8 Turn-on time: 75ns Turn-off time: 75ns CTR@If: 19-50%@16mA Slew rate: 2.5kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| CAV24C32WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
HCPL2631 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: open collector Transfer rate: 10Mbps Case: DIP8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 2.5kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| HCPL2631SDM | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 10ns Slew rate: 10kV/μs Max. off-state voltage: 5V Output voltage: -0.5...7V Manufacturer series: HCPL2631M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MJ4502G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 90V Collector current: 30A Power dissipation: 200W Case: TO3; TO204 Current gain: 25...100 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
на замовлення 112 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| NSVT1418LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 160V; 1A; 0.42W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.42W Case: SOT23; TO236AB Current gain: 100...400 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
FDA032N08 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 70V Drain current: 120A Case: TO3PN Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 0.22µC Technology: PowerTrench® Pulsed drain current: 940A Power dissipation: 37.5W On-state resistance: 3.2mΩ |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| N64S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 64kb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 8kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| N01S830BAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| N01S830BAT22IT | ONSEMI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. |
| FGD3040G2-F085V |
![]() |
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Case: DPAK
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Gate charge: 21nC
Gate-emitter voltage: ±10V
Power dissipation: 150W
Collector current: 25.6A
Collector-emitter voltage: 400V
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Case: DPAK
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Gate charge: 21nC
Gate-emitter voltage: ±10V
Power dissipation: 150W
Collector current: 25.6A
Collector-emitter voltage: 400V
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| FGD3040G2-F085 |
![]() |
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Case: DPAK
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Gate charge: 21nC
Gate-emitter voltage: ±10V
Power dissipation: 150W
Collector current: 25.6A
Collector-emitter voltage: 400V
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Case: DPAK
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Gate charge: 21nC
Gate-emitter voltage: ±10V
Power dissipation: 150W
Collector current: 25.6A
Collector-emitter voltage: 400V
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| FGD3040G2-F085C |
![]() |
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Case: DPAK
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Gate charge: 21nC
Gate-emitter voltage: ±10V
Power dissipation: 150W
Collector current: 25.6A
Collector-emitter voltage: 400V
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25.6A; 150W; DPAK; Features: logic level
Case: DPAK
Mounting: SMD
Type of transistor: IGBT
Application: ignition systems
Features of semiconductor devices: logic level
Kind of package: reel; tape
Gate charge: 21nC
Gate-emitter voltage: ±10V
Power dissipation: 150W
Collector current: 25.6A
Collector-emitter voltage: 400V
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C47LT1G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 47V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
товару немає в наявності
В кошику
од. на суму грн.
| MOC3032M |
![]() |
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 7.5kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 2kV/μs
Manufacturer series: MOC303XM
Category: Optotriacs
Description: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 7.5kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Slew rate: 2kV/μs
Manufacturer series: MOC303XM
на замовлення 635 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.96 грн |
| 11+ | 37.60 грн |
| 50+ | 30.57 грн |
| MOC3012M |
![]() |
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; triac; DIP6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC301XM
Category: Optotriacs
Description: Optotriac; 5.3kV; triac; DIP6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC301XM
на замовлення 664 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.67 грн |
| 13+ | 32.35 грн |
| 20+ | 28.79 грн |
| 50+ | 23.86 грн |
| 100+ | 22.24 грн |
| MOC3011M |
![]() |
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac
Case: DIP6
Trigger current: 60mA
Mounting: THT
Number of channels: 1
Max. off-state voltage: 3V
Manufacturer series: MOC301XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 400V
Kind of output: triac
Case: DIP6
Trigger current: 60mA
Mounting: THT
Number of channels: 1
Max. off-state voltage: 3V
Manufacturer series: MOC301XM
на замовлення 149 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.90 грн |
| 15+ | 27.98 грн |
| 25+ | 24.99 грн |
| 50+ | 22.97 грн |
| 100+ | 21.11 грн |
| FDA24N50 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 96A
Power dissipation: 270W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 96A
Power dissipation: 270W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| RFD16N06LESM9A |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 137 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 80.87 грн |
| RFD16N05SM9A |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Case: DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 47mΩ
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 50V
Power dissipation: 72W
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Case: DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 47mΩ
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 50V
Power dissipation: 72W
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC1G04DBVT1G |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 39000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.50 грн |
| MC74HC1G04DFT1G-Q |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.23 грн |
| MC74HC1G04DFT2G-Q |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.23 грн |
| NC7SZ04L6X |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SIP6; 7SZ; -40÷85°C; 2uA
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SIP6
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Quiescent current: 2µA
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 1; CMOS; SMD; SIP6; 7SZ; -40÷85°C; 2uA
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SIP6
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Quiescent current: 2µA
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 4.85 грн |
| MMSZ18T1G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 5260 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.97 грн |
| 91+ | 4.45 грн |
| 132+ | 3.07 грн |
| 156+ | 2.60 грн |
| 250+ | 2.10 грн |
| 500+ | 1.89 грн |
| SZMMSZ18T1G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5235BT1G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
товару немає в наявності
В кошику
од. на суму грн.
| SZMMSZ5235BT1G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MPSA29-D26Z |
![]() |
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 10k
Mounting: THT
Kind of package: reel; tape
Frequency: 125MHz
товару немає в наявності
В кошику
од. на суму грн.
| MPSA29 |
![]() |
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 0.8A; 0.625W; TO92
товару немає в наявності
В кошику
од. на суму грн.
| NCP1032AMNTXG |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback
Mounting: SMD
Topology: flyback
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Number of channels: 1
On-state resistance: 4.2Ω
Operating voltage: 7.55...16V DC
Frequency: 275...960kHz
Case: WDFN8
Kind of integrated circuit: AC/DC switcher; PWM controller
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback
Mounting: SMD
Topology: flyback
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Number of channels: 1
On-state resistance: 4.2Ω
Operating voltage: 7.55...16V DC
Frequency: 275...960kHz
Case: WDFN8
Kind of integrated circuit: AC/DC switcher; PWM controller
товару немає в наявності
В кошику
од. на суму грн.
| MMBTH81 |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 600MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 50mA; 225mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 600MHz
на замовлення 1737 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.19 грн |
| 46+ | 8.90 грн |
| 52+ | 7.84 грн |
| 62+ | 6.55 грн |
| 71+ | 5.74 грн |
| 100+ | 5.18 грн |
| 250+ | 4.69 грн |
| 500+ | 4.45 грн |
| 1000+ | 4.29 грн |
| NSVMMBTH81LT1G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; RF; 20V; 0.05A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| FSQ0765RSUDTU |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Output voltage: 650V
Power: 70W
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Case: TO220-6
Operating temperature: -25...85°C
Number of channels: 1
On-state resistance: 1.6Ω
Output current: 2.28A
Operating voltage: 8...19V DC
Input voltage: 85...265V
Frequency: 66.7kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller,resonant mode controller; 2.28A; 650V
Output voltage: 650V
Power: 70W
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller; resonant mode controller
Case: TO220-6
Operating temperature: -25...85°C
Number of channels: 1
On-state resistance: 1.6Ω
Output current: 2.28A
Operating voltage: 8...19V DC
Input voltage: 85...265V
Frequency: 66.7kHz
на замовлення 318 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 168.95 грн |
| 5+ | 140.71 грн |
| 25+ | 124.54 грн |
| 100+ | 122.11 грн |
| FDP038AN06A0 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 257.78 грн |
| 3+ | 215.11 грн |
| 10+ | 190.04 грн |
| BSS138 |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику
од. на суму грн.
| HUFA75645S3S |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 310W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 310W
Case: TO263AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 198nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 310W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 310W
Case: TO263AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 198nC
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FDP050AN06A0 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 11mΩ
Drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 245W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 11mΩ
Drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 245W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
товару немає в наявності
В кошику
од. на суму грн.
| FDP054N10 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 144A; Idm: 576A; 263W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
On-state resistance: 5.5mΩ
Drain current: 144A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 263W
Pulsed drain current: 576A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 144A; Idm: 576A; 263W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 156nC
On-state resistance: 5.5mΩ
Drain current: 144A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 263W
Pulsed drain current: 576A
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| FQP8N80C |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 45nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 45nC
товару немає в наявності
В кошику
од. на суму грн.
| NRVB0530T1G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Application: automotive industry
Case: SOD123
Kind of package: reel; tape
Mounting: SMD
Type of diode: Schottky switching
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 5.5A
Max. off-state voltage: 30V
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.58 грн |
| 59+ | 6.95 грн |
| 100+ | 6.63 грн |
| NCP1253BSN65T1G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...71kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 61...71kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| MC34064D-5G |
![]() |
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SO8; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Case: SO8
Operating temperature: 0...70°C
Mounting: SMD
Integrated circuit features: manual reset; watchdog
Manufacturer series: PRO
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SO8; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Case: SO8
Operating temperature: 0...70°C
Mounting: SMD
Integrated circuit features: manual reset; watchdog
Manufacturer series: PRO
Number of channels: 1
на замовлення 2201 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 98+ | 33.79 грн |
| NCP1253BSN100T1G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.3...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: TSOP6
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.8...25.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| BC818-40LT1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| NSVBC818-40LT1G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MMBD701LT1G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 10mA
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 10mA
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 2052 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.80 грн |
| 61+ | 6.63 грн |
| 72+ | 5.66 грн |
| 81+ | 5.00 грн |
| 100+ | 4.37 грн |
| 250+ | 3.66 грн |
| MMBD7000LT1G |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
на замовлення 5490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.97 грн |
| 76+ | 5.34 грн |
| 112+ | 3.62 грн |
| 134+ | 3.03 грн |
| 250+ | 2.40 грн |
| 500+ | 2.03 грн |
| 1000+ | 1.73 грн |
| 3000+ | 1.39 грн |
| MMBD1203 |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 2870 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.32 грн |
| 49+ | 8.41 грн |
| 53+ | 7.76 грн |
| 100+ | 5.62 грн |
| 250+ | 4.81 грн |
| 500+ | 4.21 грн |
| 1000+ | 3.61 грн |
| MMBD1205 |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 2797 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.19 грн |
| 46+ | 8.81 грн |
| 65+ | 6.28 грн |
| 100+ | 5.36 грн |
| 500+ | 3.74 грн |
| 1000+ | 3.22 грн |
| MMBD1201 |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 0.1mA
Capacitance: 2pF
Power dissipation: 0.35W
Max. forward impulse current: 2A
на замовлення 446 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.97 грн |
| 80+ | 5.09 грн |
| 115+ | 3.53 грн |
| MMBD6050LT1G |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Capacitance: 5pF
Power dissipation: 0.4W
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Capacitance: 5pF
Power dissipation: 0.4W
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.97 грн |
| 105+ | 3.88 грн |
| 156+ | 2.60 грн |
| 183+ | 2.22 грн |
| 500+ | 1.56 грн |
| 1000+ | 1.37 грн |
| 1500+ | 1.33 грн |
| MMBD452LT1G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1.5pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1.5pF
на замовлення 8990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.19 грн |
| 43+ | 9.54 грн |
| 48+ | 8.49 грн |
| 55+ | 7.36 грн |
| 100+ | 6.07 грн |
| 250+ | 5.82 грн |
| MMBD6100LT1G |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 2.5pF
Power dissipation: 0.225W
Max. forward impulse current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Capacitance: 2.5pF
Power dissipation: 0.225W
Max. forward impulse current: 0.5A
товару немає в наявності
В кошику
од. на суму грн.
| MMBD1504A |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common cathode; double
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.19 грн |
| 52+ | 7.84 грн |
| 100+ | 5.72 грн |
| 250+ | 5.01 грн |
| 500+ | 4.50 грн |
| 1000+ | 4.04 грн |
| MMBD4148 |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 4pF
Power dissipation: 0.35W
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Capacitance: 4pF
Power dissipation: 0.35W
товару немає в наявності
В кошику
од. на суму грн.
| MCH4020-TL-H |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 8V; 150mA; 400mW; SC82AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 8V
Collector current: 0.15A
Power dissipation: 0.4W
Case: SC82AB
Current gain: 60...150
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 13...16GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 8V; 150mA; 400mW; SC82AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 8V
Collector current: 0.15A
Power dissipation: 0.4W
Case: SC82AB
Current gain: 60...150
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 13...16GHz
товару немає в наявності
В кошику
од. на суму грн.
| FDP047AN08A0 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 252.56 грн |
| 10+ | 177.91 грн |
| 50+ | 145.56 грн |
| 6N139M |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500%@1.6mA
Case: DIP8
Turn-on time: 25µs
Turn-off time: 60µs
Slew rate: 2.5kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; CTR@If: 500%@1.6mA; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 500%@1.6mA
Case: DIP8
Turn-on time: 25µs
Turn-off time: 60µs
Slew rate: 2.5kV/μs
товару немає в наявності
В кошику
од. на суму грн.
| 6N139SDM |
![]() |
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; Gull wing 8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 500-1600%@1.6mA
Case: Gull wing 8
Slew rate: 10kV/μs
Manufacturer series: 6N139M
товару немає в наявності
В кошику
од. на суму грн.
| 6N137M |
![]() |
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
товару немає в наявності
В кошику
од. на суму грн.
| CAV24C32WE-GT3 |
![]() |
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| HCPL2631 |
![]() |
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
товару немає в наявності
В кошику
од. на суму грн.
| HCPL2631SDM |
![]() |
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7V
Manufacturer series: HCPL2631M
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 5kV; 10Mbps; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -0.5...7V
Manufacturer series: HCPL2631M
товару немає в наявності
В кошику
од. на суму грн.
| MJ4502G |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
на замовлення 112 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 486.82 грн |
| NSVT1418LT1G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.42W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.42W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Current gain: 100...400
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| FDA032N08 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Case: TO3PN
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.22µC
Technology: PowerTrench®
Pulsed drain current: 940A
Power dissipation: 37.5W
On-state resistance: 3.2mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Case: TO3PN
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.22µC
Technology: PowerTrench®
Pulsed drain current: 940A
Power dissipation: 37.5W
On-state resistance: 3.2mΩ
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 312.65 грн |
| 10+ | 240.18 грн |
| 30+ | 204.60 грн |
| N64S830HAT22I |
![]() |
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
товару немає в наявності
В кошику
од. на суму грн.
| N01S830BAT22I |
![]() |
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
товару немає в наявності
В кошику
од. на суму грн.
| N01S830BAT22IT |
![]() |
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
товару немає в наявності
В кошику
од. на суму грн.

















