Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SG3525ADWR2G | ONSEMI |
![]() tariffCode: 85423990 rohsCompliant: YES IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Schaltfrequenz, max.: 400kHz Qualifikation: - IC-Gehäuse / Bauform: SOIC Schaltfrequenz, min.: 100Hz MSL: MSL 3 - 168 Stunden usEccn: EAR99 Schaltfrequenz, typ.: - Anzahl der Kanäle: 2Kanäle Betriebstemperatur, min.: 0°C Versorgungsspannung, min.: 8V euEccn: NLR Netzteil-Controller: Double-Ended-Regler (doppelseitig) Topologie: Halbbrücke Anzahl der Pins: 16Pin(s) Produktpalette: - Steuer-/Bedienmodus: Voltage-Mode-Regelung productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 35V Tastverhältnis, min.: 0% Betriebstemperatur, max.: 70°C Tastverhältnis, max.: 49% SVHC: No SVHC (27-Jun-2024) |
на замовлення 2581 шт: термін постачання 21-31 дні (днів) |
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MC7805BDTRKG | ONSEMI |
![]() tariffCode: 85423990 Ausgang: Fest rohsCompliant: Y-EX Ausgangsspannung, min.: - IC-Montage: Oberflächenmontage Ausgangsspannung, max.: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - IC-Gehäuse / Bauform: TO-252 (DPAK) Nennausgangsspannung: 5V MSL: - usEccn: EAR99 Betriebstemperatur, min.: -40°C Eingangsspannung, max.: 35V euEccn: NLR Ausgangsstrom, max.: 1A Eingangsspannung, min.: 10V Anzahl der Pins: 3Pin(s) Produktpalette: 7805 Voltage Regulators Ausgangsspannung, nom.: 5V productTraceability: Yes-Date/Lot Code Ausgangsstrom, max.: 1A Betriebstemperatur, max.: 125°C Anzahl der Ausgänge: 1Ausgänge SVHC: Lead (27-Jun-2024) |
на замовлення 13825 шт: термін постачання 21-31 дні (днів) |
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MC7815CDTRKG | ONSEMI |
![]() tariffCode: 85423990 Ausgang: Fest rohsCompliant: Y-EX Ausgangsspannung, min.: - IC-Montage: Oberflächenmontage Ausgangsspannung, max.: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - IC-Gehäuse / Bauform: TO-252 (DPAK) Nennausgangsspannung: 15V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Betriebstemperatur, min.: 0°C Eingangsspannung, max.: 35V euEccn: NLR Ausgangsstrom, max.: 1A Eingangsspannung, min.: 17V Anzahl der Pins: 3Pin(s) Produktpalette: 15V 1A Linear Voltage Regulators Ausgangsspannung, nom.: 15V productTraceability: Yes-Date/Lot Code Ausgangsstrom, max.: 1A Betriebstemperatur, max.: 125°C Anzahl der Ausgänge: 1Ausgänge SVHC: Lead (27-Jun-2024) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBFJ112 | ONSEMI |
![]() tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drainstrom bei Gate-Nullspannung, max.: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Bauform - Transistor: SOT-23 Anzahl der Pins: 3 Pins Gate/Source-Durchbruchspannung, max.: -35V Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Gate-Source-Sperrspannung, max.: -5V SVHC: No SVHC (27-Jun-2024) |
на замовлення 12482 шт: термін постачання 21-31 дні (днів) |
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FCA20N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCA20N60F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCB20N60FTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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FCB20N60TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 98nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCP20N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
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MC33152DG | ONSEMI |
![]() Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.1...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: non-inverting Protection: undervoltage UVP |
на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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MC33152DR2G | ONSEMI |
![]() Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.1...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: non-inverting Protection: undervoltage UVP |
на замовлення 1228 шт: термін постачання 21-30 дні (днів) |
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UC3843BD1G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: tube Power: 702mW |
на замовлення 840 шт: термін постачання 21-30 дні (днів) |
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UC3843BD1R2G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 702mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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UC3843BDR2G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: 0...70°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 862mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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UC3843BNG | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: 0...70°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: tube Power: 1.25W |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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UC3843BVD1R2G | ONSEMI |
![]() ![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 702mW |
на замовлення 2071 шт: термін постачання 21-30 дні (днів) |
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UC3843BVDR2G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 862mW |
на замовлення 1955 шт: термін постачання 21-30 дні (днів) |
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MC74HC573ADTG | ONSEMI |
![]() ![]() Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of package: tube Kind of output: 3-state Family: HC Manufacturer series: HC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74HC573ADTR2G | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state; non-inverting Trigger: level-triggered Manufacturer series: HC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC573ADWG | ONSEMI |
![]() ![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state; non-inverting Trigger: level-triggered Manufacturer series: HC Technology: CMOS |
на замовлення 249 шт: термін постачання 21-30 дні (днів) |
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MC74HC573ADWR2G | ONSEMI |
![]() Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HC Manufacturer series: HC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MM74HC573MTC | ONSEMI |
![]() ![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state Trigger: level-triggered Manufacturer series: HC Technology: CMOS |
на замовлення 191 шт: термін постачання 21-30 дні (днів) |
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MM74HC573MTCX | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Trigger: level-triggered Manufacturer series: HC Technology: CMOS Quiescent current: 160µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MM74HC573WM | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Trigger: level-triggered Manufacturer series: HC Technology: CMOS Quiescent current: 80µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MM74HC573WMX | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...6V DC Mounting: SMD Case: SO20 Operating temperature: -40...85°C Kind of output: 3-state Trigger: level-triggered Manufacturer series: HC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS16DXV6T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT563; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: double independent Capacitance: 2pF Case: SOT563 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Power dissipation: 0.5W Kind of package: reel; tape Leakage current: 50µA |
на замовлення 2426 шт: термін постачання 21-30 дні (днів) |
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BAS16HT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.5A; SOD323; 300mW; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.5A Semiconductor structure: single diode Case: SOD323 Power dissipation: 0.3W Kind of package: reel; tape |
на замовлення 25029 шт: термін постачання 21-30 дні (днів) |
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FCH077N65F-F085 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FCH077N65F-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Pulsed drain current: 162A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LM311DR2G | ONSEMI |
![]() Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8 Kind of comparator: universal Mounting: SMT Case: SO8 Operating voltage: 5...30V Type of integrated circuit: comparator Number of comparators: 1 Delay time: 200ns |
на замовлення 1133 шт: термін постачання 21-30 дні (днів) |
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FDP18N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
на замовлення 166 шт: термін постачання 21-30 дні (днів) |
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FDPF18N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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FDPF18N50T | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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BC817-40LT1G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 22578 шт: термін постачання 21-30 дні (днів) |
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BC817-40LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 5662 шт: термін постачання 21-30 дні (днів) |
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TIP102G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB Collector-emitter voltage: 100V Current gain: 20000 Collector current: 8A Type of transistor: NPN Power dissipation: 2W Polarisation: bipolar Kind of package: tube Heatsink thickness: 1.15...1.39mm Kind of transistor: Darlington Mounting: THT Case: TO220AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC857ALT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 6407 шт: термін постачання 21-30 дні (днів) |
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BC548BTA | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Formed Current gain: 200...450 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
на замовлення 175 шт: термін постачання 21-30 дні (днів) |
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BC548CTA | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Formed Current gain: 420...800 Mounting: THT Kind of package: Ammo Pack Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FOD814A | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Case: DIP4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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FOD814A3SD | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Case: Gull wing 4 Turn-on time: 4µs Turn-off time: 3µs Manufacturer series: FOD814 |
на замовлення 331 шт: термін постачання 21-30 дні (днів) |
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FOD814ASD | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA Manufacturer series: FOD814 Case: Gull wing 4 Turn-on time: 4µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-150%@1mA Type of optocoupler: optocoupler Mounting: SMD |
на замовлення 2132 шт: термін постачання 21-30 дні (днів) |
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6N137M | ONSEMI |
![]() ![]() Description: Optocoupler; THT; Ch: 1; OUT: gate; 5kV; CTR@If: 19-50%@16mA; 1Mbps Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Insulation voltage: 5kV Transfer rate: 1Mbps Case: DIP8 Turn-on time: 30ns Turn-off time: 10ns Slew rate: 2.5kV/μs Manufacturer series: 6N137M Supply voltage: 4.5...5.5V DC CTR@If: 19-50%@16mA |
на замовлення 1016 шт: термін постачання 21-30 дні (днів) |
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6N137SDM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate Transfer rate: 10Mbps Case: Gull wing 8 Turn-on time: 30ns Turn-off time: 10ns Slew rate: 10kV/μs Manufacturer series: 6N137M CTR@If: 19-50%@16mA |
на замовлення 464 шт: термін постачання 21-30 дні (днів) |
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MJD340G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK Case: DPAK Frequency: 10MHz Collector-emitter voltage: 300V Current gain: 30...240 Collector current: 0.5A Type of transistor: NPN Power dissipation: 15W Polarisation: bipolar Kind of package: tube Mounting: SMD |
на замовлення 233 шт: термін постачання 21-30 дні (днів) |
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MJE340G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 20W Case: TO225 Mounting: THT Kind of package: bulk Current gain: 30...240 |
на замовлення 1623 шт: термін постачання 21-30 дні (днів) |
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SS14HE | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 713 шт: термін постачання 21-30 дні (днів) |
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NRVBSS14HE | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape Application: automotive industry |
на замовлення 2997 шт: термін постачання 21-30 дні (днів) |
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UC3845BD1G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...70°C Topology: boost; flyback Supply voltage: 8.4...36V Duty cycle factor: 0...48% Kind of package: tube Operating voltage: 7.6...36V Part status: Not recommended for new designs Power: 702mW |
на замовлення 146 шт: термін постачання 21-30 дні (днів) |
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2N5551BU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 80...250 Mounting: THT Kind of package: bulk Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N5551TA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 80...250 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
на замовлення 365 шт: термін постачання 21-30 дні (днів) |
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2N5551TF | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 80...250 Mounting: THT Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N5551TFR | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 80...250 Mounting: THT Kind of package: reel; tape Frequency: 100MHz |
на замовлення 1945 шт: термін постачання 21-30 дні (днів) |
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FQP50N06 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 35.4A Power dissipation: 120W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 22mΩ Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RFP50N06 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 131W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SS36FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 986 шт: термін постачання 21-30 дні (днів) |
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NRVBSS36FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TIP41CG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Case: TO220AB Current gain: 15...75 Mounting: THT Frequency: 3MHz Power dissipation: 65W Kind of package: tube |
на замовлення 225 шт: термін постачання 21-30 дні (днів) |
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TIP31AG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 40W Case: TO220AB Current gain: 10...50 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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TIP31BG | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Case: TO220AB Current gain: 10...50 Mounting: THT Frequency: 3MHz Power dissipation: 40W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
SG3525ADWR2G |
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Виробник: ONSEMI
Description: ONSEMI - SG3525ADWR2G - PWM-Controller, Voltage-Mode, 35V-8V Versorgungsspannung, 400kHz, SOIC-16
tariffCode: 85423990
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Schaltfrequenz, max.: 400kHz
Qualifikation: -
IC-Gehäuse / Bauform: SOIC
Schaltfrequenz, min.: 100Hz
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Schaltfrequenz, typ.: -
Anzahl der Kanäle: 2Kanäle
Betriebstemperatur, min.: 0°C
Versorgungsspannung, min.: 8V
euEccn: NLR
Netzteil-Controller: Double-Ended-Regler (doppelseitig)
Topologie: Halbbrücke
Anzahl der Pins: 16Pin(s)
Produktpalette: -
Steuer-/Bedienmodus: Voltage-Mode-Regelung
productTraceability: Yes-Date/Lot Code
Versorgungsspannung, max.: 35V
Tastverhältnis, min.: 0%
Betriebstemperatur, max.: 70°C
Tastverhältnis, max.: 49%
SVHC: No SVHC (27-Jun-2024)
Description: ONSEMI - SG3525ADWR2G - PWM-Controller, Voltage-Mode, 35V-8V Versorgungsspannung, 400kHz, SOIC-16
tariffCode: 85423990
rohsCompliant: YES
IC-Montage: Oberflächenmontage
hazardous: false
rohsPhthalatesCompliant: YES
Schaltfrequenz, max.: 400kHz
Qualifikation: -
IC-Gehäuse / Bauform: SOIC
Schaltfrequenz, min.: 100Hz
MSL: MSL 3 - 168 Stunden
usEccn: EAR99
Schaltfrequenz, typ.: -
Anzahl der Kanäle: 2Kanäle
Betriebstemperatur, min.: 0°C
Versorgungsspannung, min.: 8V
euEccn: NLR
Netzteil-Controller: Double-Ended-Regler (doppelseitig)
Topologie: Halbbrücke
Anzahl der Pins: 16Pin(s)
Produktpalette: -
Steuer-/Bedienmodus: Voltage-Mode-Regelung
productTraceability: Yes-Date/Lot Code
Versorgungsspannung, max.: 35V
Tastverhältnis, min.: 0%
Betriebstemperatur, max.: 70°C
Tastverhältnis, max.: 49%
SVHC: No SVHC (27-Jun-2024)
на замовлення 2581 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
100+ | 89.92 грн |
250+ | 73.70 грн |
500+ | 68.26 грн |
MC7805BDTRKG |
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Виробник: ONSEMI
Description: ONSEMI - MC7805BDTRKG - Linearer Festspannungsregler, 7805, positiv, 10V bis 35Vin, 5V und 1Aout, TO-252-3
tariffCode: 85423990
Ausgang: Fest
rohsCompliant: Y-EX
Ausgangsspannung, min.: -
IC-Montage: Oberflächenmontage
Ausgangsspannung, max.: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
IC-Gehäuse / Bauform: TO-252 (DPAK)
Nennausgangsspannung: 5V
MSL: -
usEccn: EAR99
Betriebstemperatur, min.: -40°C
Eingangsspannung, max.: 35V
euEccn: NLR
Ausgangsstrom, max.: 1A
Eingangsspannung, min.: 10V
Anzahl der Pins: 3Pin(s)
Produktpalette: 7805 Voltage Regulators
Ausgangsspannung, nom.: 5V
productTraceability: Yes-Date/Lot Code
Ausgangsstrom, max.: 1A
Betriebstemperatur, max.: 125°C
Anzahl der Ausgänge: 1Ausgänge
SVHC: Lead (27-Jun-2024)
Description: ONSEMI - MC7805BDTRKG - Linearer Festspannungsregler, 7805, positiv, 10V bis 35Vin, 5V und 1Aout, TO-252-3
tariffCode: 85423990
Ausgang: Fest
rohsCompliant: Y-EX
Ausgangsspannung, min.: -
IC-Montage: Oberflächenmontage
Ausgangsspannung, max.: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
IC-Gehäuse / Bauform: TO-252 (DPAK)
Nennausgangsspannung: 5V
MSL: -
usEccn: EAR99
Betriebstemperatur, min.: -40°C
Eingangsspannung, max.: 35V
euEccn: NLR
Ausgangsstrom, max.: 1A
Eingangsspannung, min.: 10V
Anzahl der Pins: 3Pin(s)
Produktpalette: 7805 Voltage Regulators
Ausgangsspannung, nom.: 5V
productTraceability: Yes-Date/Lot Code
Ausgangsstrom, max.: 1A
Betriebstemperatur, max.: 125°C
Anzahl der Ausgänge: 1Ausgänge
SVHC: Lead (27-Jun-2024)
на замовлення 13825 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
100+ | 31.30 грн |
500+ | 24.42 грн |
1000+ | 20.25 грн |
MC7815CDTRKG |
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Виробник: ONSEMI
Description: ONSEMI - MC7815CDTRKG - Linearer Spannungsregler, feste Ausgangsspannung, 17V bis 35V Eingangsspannung, 15V/1Aout, TO-252-3
tariffCode: 85423990
Ausgang: Fest
rohsCompliant: Y-EX
Ausgangsspannung, min.: -
IC-Montage: Oberflächenmontage
Ausgangsspannung, max.: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
IC-Gehäuse / Bauform: TO-252 (DPAK)
Nennausgangsspannung: 15V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Betriebstemperatur, min.: 0°C
Eingangsspannung, max.: 35V
euEccn: NLR
Ausgangsstrom, max.: 1A
Eingangsspannung, min.: 17V
Anzahl der Pins: 3Pin(s)
Produktpalette: 15V 1A Linear Voltage Regulators
Ausgangsspannung, nom.: 15V
productTraceability: Yes-Date/Lot Code
Ausgangsstrom, max.: 1A
Betriebstemperatur, max.: 125°C
Anzahl der Ausgänge: 1Ausgänge
SVHC: Lead (27-Jun-2024)
Description: ONSEMI - MC7815CDTRKG - Linearer Spannungsregler, feste Ausgangsspannung, 17V bis 35V Eingangsspannung, 15V/1Aout, TO-252-3
tariffCode: 85423990
Ausgang: Fest
rohsCompliant: Y-EX
Ausgangsspannung, min.: -
IC-Montage: Oberflächenmontage
Ausgangsspannung, max.: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
IC-Gehäuse / Bauform: TO-252 (DPAK)
Nennausgangsspannung: 15V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Betriebstemperatur, min.: 0°C
Eingangsspannung, max.: 35V
euEccn: NLR
Ausgangsstrom, max.: 1A
Eingangsspannung, min.: 17V
Anzahl der Pins: 3Pin(s)
Produktpalette: 15V 1A Linear Voltage Regulators
Ausgangsspannung, nom.: 15V
productTraceability: Yes-Date/Lot Code
Ausgangsstrom, max.: 1A
Betriebstemperatur, max.: 125°C
Anzahl der Ausgänge: 1Ausgänge
SVHC: Lead (27-Jun-2024)
товару немає в наявності
В кошику
од. на суму грн.
MMBFJ112 |
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Виробник: ONSEMI
Description: ONSEMI - MMBFJ112 - JFET-Transistor, JFET, -35 V, -5 V, SOT-23, 3 Pins, 150 °C
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drainstrom bei Gate-Nullspannung, max.: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Bauform - Transistor: SOT-23
Anzahl der Pins: 3 Pins
Gate/Source-Durchbruchspannung, max.: -35V
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Gate-Source-Sperrspannung, max.: -5V
SVHC: No SVHC (27-Jun-2024)
Description: ONSEMI - MMBFJ112 - JFET-Transistor, JFET, -35 V, -5 V, SOT-23, 3 Pins, 150 °C
tariffCode: 85412100
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drainstrom bei Gate-Nullspannung, max.: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Bauform - Transistor: SOT-23
Anzahl der Pins: 3 Pins
Gate/Source-Durchbruchspannung, max.: -35V
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Gate-Source-Sperrspannung, max.: -5V
SVHC: No SVHC (27-Jun-2024)
на замовлення 12482 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
100+ | 9.60 грн |
500+ | 8.76 грн |
1500+ | 7.87 грн |
FCA20N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
товару немає в наявності
В кошику
од. на суму грн.
FCA20N60F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
товару немає в наявності
В кошику
од. на суму грн.
FCB20N60FTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 309.70 грн |
3+ | 258.90 грн |
5+ | 198.44 грн |
13+ | 187.58 грн |
FCB20N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
товару немає в наявності
В кошику
од. на суму грн.
FCP20N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
на замовлення 102 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 452.45 грн |
3+ | 361.22 грн |
4+ | 251.92 грн |
10+ | 237.97 грн |
MC33152DG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: non-inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: non-inverting
Protection: undervoltage UVP
на замовлення 77 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 167.79 грн |
10+ | 96.12 грн |
16+ | 59.69 грн |
42+ | 56.59 грн |
MC33152DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
на замовлення 1228 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 130.22 грн |
10+ | 66.66 грн |
17+ | 56.59 грн |
45+ | 53.48 грн |
100+ | 51.93 грн |
500+ | 51.16 грн |
UC3843BD1G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 702mW
на замовлення 840 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 78.47 грн |
10+ | 51.31 грн |
38+ | 23.95 грн |
105+ | 22.63 грн |
588+ | 22.01 грн |
UC3843BD1R2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
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UC3843BDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
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UC3843BNG |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 1.25W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; DIP8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: 0...70°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: tube
Power: 1.25W
на замовлення 68 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 102.68 грн |
10+ | 46.82 грн |
25+ | 42.40 грн |
29+ | 32.40 грн |
UC3843BVD1R2G | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
на замовлення 2071 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 52.59 грн |
11+ | 38.45 грн |
39+ | 23.49 грн |
107+ | 22.17 грн |
500+ | 21.55 грн |
1000+ | 21.32 грн |
UC3843BVDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
на замовлення 1955 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.93 грн |
10+ | 42.09 грн |
37+ | 24.49 грн |
102+ | 23.18 грн |
1000+ | 22.32 грн |
MC74HC573ADTG | ![]() |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
Manufacturer series: HC
Technology: CMOS
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Family: HC
Manufacturer series: HC
Technology: CMOS
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MC74HC573ADTR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
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MC74HC573ADWG | ![]() |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20-W; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
на замовлення 249 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 101.84 грн |
6+ | 64.80 грн |
10+ | 49.30 грн |
25+ | 34.57 грн |
38+ | 31.63 грн |
41+ | 22.17 грн |
113+ | 20.93 грн |
MC74HC573ADWR2G |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HC
Manufacturer series: HC
Technology: CMOS
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HC
Manufacturer series: HC
Technology: CMOS
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MM74HC573MTC |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
на замовлення 191 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 430.74 грн |
4+ | 244.95 грн |
11+ | 230.99 грн |
MM74HC573MTCX |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Quiescent current: 160µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Quiescent current: 160µA
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MM74HC573WM |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Quiescent current: 80µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Quiescent current: 80µA
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MM74HC573WMX |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; SO20; HC; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...6V DC
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
Manufacturer series: HC
Technology: CMOS
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BAS16DXV6T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT563; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double independent
Capacitance: 2pF
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Power dissipation: 0.5W
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT563; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: double independent
Capacitance: 2pF
Case: SOT563
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Power dissipation: 0.5W
Kind of package: reel; tape
Leakage current: 50µA
на замовлення 2426 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.03 грн |
41+ | 9.61 грн |
50+ | 8.25 грн |
100+ | 6.46 грн |
202+ | 4.53 грн |
500+ | 4.52 грн |
555+ | 4.27 грн |
1000+ | 4.11 грн |
BAS16HT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; SOD323; 300mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOD323
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.5A; SOD323; 300mW; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOD323
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 25029 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
54+ | 7.85 грн |
152+ | 2.56 грн |
295+ | 1.32 грн |
1000+ | 0.79 грн |
1500+ | 0.78 грн |
9000+ | 0.77 грн |
FCH077N65F-F085 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
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FCH077N65F-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
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LM311DR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8
Kind of comparator: universal
Mounting: SMT
Case: SO8
Operating voltage: 5...30V
Type of integrated circuit: comparator
Number of comparators: 1
Delay time: 200ns
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 200ns; 5÷30V; SMT; SO8
Kind of comparator: universal
Mounting: SMT
Case: SO8
Operating voltage: 5...30V
Type of integrated circuit: comparator
Number of comparators: 1
Delay time: 200ns
на замовлення 1133 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.58 грн |
13+ | 31.94 грн |
15+ | 26.82 грн |
68+ | 13.33 грн |
187+ | 12.63 грн |
500+ | 12.09 грн |
FDP18N50 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 166 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 167.43 грн |
8+ | 127.90 грн |
20+ | 120.92 грн |
FDPF18N50 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 227.06 грн |
3+ | 189.14 грн |
7+ | 144.95 грн |
FDPF18N50T |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 43 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 279.65 грн |
6+ | 161.23 грн |
16+ | 152.70 грн |
BC817-40LT1G | ![]() |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 22578 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
63+ | 6.63 грн |
109+ | 3.57 грн |
138+ | 2.81 грн |
250+ | 2.36 грн |
500+ | 1.98 грн |
1000+ | 1.09 грн |
1023+ | 0.88 грн |
2814+ | 0.84 грн |
BC817-40LT3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 5662 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.85 грн |
64+ | 6.12 грн |
106+ | 3.67 грн |
129+ | 3.01 грн |
500+ | 2.05 грн |
588+ | 1.54 грн |
1615+ | 1.46 грн |
TIP102G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Collector-emitter voltage: 100V
Current gain: 20000
Collector current: 8A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Kind of transistor: Darlington
Mounting: THT
Case: TO220AB
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 2W; TO220AB
Collector-emitter voltage: 100V
Current gain: 20000
Collector current: 8A
Type of transistor: NPN
Power dissipation: 2W
Polarisation: bipolar
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Kind of transistor: Darlington
Mounting: THT
Case: TO220AB
товару немає в наявності
В кошику
од. на суму грн.
BC857ALT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 6407 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
58+ | 7.31 грн |
76+ | 5.12 грн |
172+ | 2.26 грн |
221+ | 1.76 грн |
890+ | 1.02 грн |
2449+ | 0.96 грн |
BC548BTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 200...450
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
на замовлення 175 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.36 грн |
36+ | 10.77 грн |
100+ | 6.74 грн |
BC548CTA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.5W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92 Formed
Current gain: 420...800
Mounting: THT
Kind of package: Ammo Pack
Frequency: 300MHz
товару немає в наявності
В кошику
од. на суму грн.
FOD814A |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Case: DIP4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
на замовлення 53 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.73 грн |
18+ | 22.40 грн |
FOD814A3SD |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Manufacturer series: FOD814
на замовлення 331 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 51.76 грн |
13+ | 31.55 грн |
43+ | 21.55 грн |
116+ | 20.39 грн |
FOD814ASD |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA
Manufacturer series: FOD814
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Type of optocoupler: optocoupler
Mounting: SMD
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 50-150%@1mA
Manufacturer series: FOD814
Case: Gull wing 4
Turn-on time: 4µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-150%@1mA
Type of optocoupler: optocoupler
Mounting: SMD
на замовлення 2132 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.21 грн |
28+ | 13.88 грн |
50+ | 11.24 грн |
86+ | 10.62 грн |
100+ | 10.31 грн |
235+ | 10.08 грн |
500+ | 9.69 грн |
6N137M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; 5kV; CTR@If: 19-50%@16mA; 1Mbps
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 2.5kV/μs
Manufacturer series: 6N137M
Supply voltage: 4.5...5.5V DC
CTR@If: 19-50%@16mA
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; 5kV; CTR@If: 19-50%@16mA; 1Mbps
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 2.5kV/μs
Manufacturer series: 6N137M
Supply voltage: 4.5...5.5V DC
CTR@If: 19-50%@16mA
на замовлення 1016 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 71.79 грн |
10+ | 40.31 грн |
28+ | 32.56 грн |
77+ | 31.01 грн |
500+ | 30.23 грн |
6N137SDM |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Manufacturer series: 6N137M
CTR@If: 19-50%@16mA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 10Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 10ns
Slew rate: 10kV/μs
Manufacturer series: 6N137M
CTR@If: 19-50%@16mA
на замовлення 464 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 134.40 грн |
10+ | 79.84 грн |
15+ | 60.46 грн |
42+ | 57.36 грн |
200+ | 55.04 грн |
MJD340G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Case: DPAK
Frequency: 10MHz
Collector-emitter voltage: 300V
Current gain: 30...240
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 15W
Polarisation: bipolar
Kind of package: tube
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 15W; DPAK
Case: DPAK
Frequency: 10MHz
Collector-emitter voltage: 300V
Current gain: 30...240
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 15W
Polarisation: bipolar
Kind of package: tube
Mounting: SMD
на замовлення 233 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 79.30 грн |
14+ | 27.91 грн |
25+ | 24.57 грн |
41+ | 22.17 грн |
75+ | 22.09 грн |
113+ | 21.01 грн |
MJE340G | ![]() |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 30...240
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 20W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 20W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 30...240
на замовлення 1623 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.60 грн |
11+ | 35.73 грн |
50+ | 18.22 грн |
138+ | 17.21 грн |
1000+ | 16.51 грн |
SS14HE |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 713 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.38 грн |
22+ | 18.14 грн |
100+ | 9.15 грн |
273+ | 8.68 грн |
NRVBSS14HE |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Application: automotive industry
на замовлення 2997 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.05 грн |
16+ | 24.49 грн |
76+ | 12.01 грн |
208+ | 11.39 грн |
1000+ | 11.32 грн |
UC3845BD1G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: boost; flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...48%
Kind of package: tube
Operating voltage: 7.6...36V
Part status: Not recommended for new designs
Power: 702mW
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; boost,flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...70°C
Topology: boost; flyback
Supply voltage: 8.4...36V
Duty cycle factor: 0...48%
Kind of package: tube
Operating voltage: 7.6...36V
Part status: Not recommended for new designs
Power: 702mW
на замовлення 146 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.56 грн |
25+ | 30.93 грн |
39+ | 23.64 грн |
106+ | 22.32 грн |
2N5551BU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 80...250
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 80...250
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
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2N5551TA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
на замовлення 365 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.03 грн |
40+ | 9.92 грн |
54+ | 7.21 грн |
100+ | 6.20 грн |
266+ | 3.41 грн |
2N5551TF |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
2N5551TFR |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 80...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 1945 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.70 грн |
44+ | 8.99 грн |
100+ | 6.12 грн |
279+ | 3.26 грн |
767+ | 3.08 грн |
FQP50N06 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Power dissipation: 120W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Power dissipation: 120W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
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од. на суму грн.
RFP50N06 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 131W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 131W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
SS36FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 986 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.90 грн |
13+ | 30.15 грн |
63+ | 14.65 грн |
171+ | 13.80 грн |
NRVBSS36FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
TIP41CG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
на замовлення 225 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.62 грн |
10+ | 53.02 грн |
22+ | 42.94 грн |
50+ | 42.87 грн |
59+ | 40.54 грн |
TIP31AG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 40W
Case: TO220AB
Current gain: 10...50
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 132 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 58.43 грн |
10+ | 40.77 грн |
30+ | 30.91 грн |
82+ | 29.22 грн |
TIP31BG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Case: TO220AB
Current gain: 10...50
Mounting: THT
Frequency: 3MHz
Power dissipation: 40W
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.