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NVMTS1D5N08H ONSEMI nvmts1d5n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 129W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.4mΩ
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D6N10MCTXG ONSEMI nvmts1d6n10mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NCP152MX280120TCG ONSEMI ncp152-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Mounting: SMD
Tolerance: ±2%
Operating temperature: -40...85°C
Manufacturer series: NCP152
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
Output voltage: 1.2V; 2.8V
Input voltage: 1.9...5.25V
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FDH333 FDH333 ONSEMI ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1.15V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 1A
Case: DO35
Power dissipation: 0.5W
Leakage current: 0.5µA
Max. forward voltage: 1.15V
Max. load current: 0.6A
Capacitance: 6pF
на замовлення 2714 шт:
термін постачання 21-30 дні (днів)
36+12.02 грн
54+7.42 грн
100+5.26 грн
250+4.58 грн
500+4.12 грн
1000+3.70 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
FDH333TR ONSEMI ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; reel,tape; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
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FDMC86324 FDMC86324 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF5A2BDEE67E28&compId=FDMC86324.pdf?ci_sign=d8ca39e5aa8dc96b53f27e3ed61837eed76dd64a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 40mΩ
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 80V
Kind of channel: enhancement
Mounting: SMD
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MURA120T3G MURA120T3G ONSEMI mura115t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 1724 шт:
термін постачання 21-30 дні (днів)
18+24.90 грн
25+16.35 грн
50+12.44 грн
100+11.08 грн
250+9.57 грн
500+8.61 грн
1000+7.97 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
MMSZ22T1G MMSZ22T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 13985 шт:
термін постачання 21-30 дні (днів)
63+6.87 грн
76+5.26 грн
85+4.70 грн
131+3.05 грн
163+2.45 грн
500+1.64 грн
1000+1.48 грн
1500+1.41 грн
3000+1.40 грн
Мінімальне замовлення: 63
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BCP68T1G BCP68T1G ONSEMI bcp68t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
на замовлення 968 шт:
термін постачання 21-30 дні (днів)
12+36.92 грн
18+22.41 грн
25+18.50 грн
100+13.87 грн
500+10.29 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SBCP68T1G SBCP68T1G ONSEMI bcp68t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
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NSVBCP68T1G ONSEMI bcp68t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
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RURG3060-F085 RURG3060-F085 ONSEMI rurg3060_f085-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 80ns
Application: automotive industry
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
2+265.34 грн
3+224.86 грн
10+177.82 грн
30+173.83 грн
Мінімальне замовлення: 2
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RURG3060 RURG3060 ONSEMI pVersion=0046&contRep=ZT&docId=E20E076F090AF2F1A303005056AB0C4F&compId=RURG3060.pdf?ci_sign=096424324fa4165118f1f0b0d48c400328ce5e8d Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 325A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-2
Reverse recovery time: 60ns
Max. load current: 70A
Max. forward voltage: 1.5V
Power dissipation: 125W
Features of semiconductor devices: ultrafast switching
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NCV7430D20R2G NCV7430D20R2G ONSEMI ncv7430-d.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; SO14; Ch: 3
Application: automotive industry; for LED applications
Kind of integrated circuit: transceiver
Case: SO14
Type of integrated circuit: interface
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 3
Supply voltage: 5.5...18V DC
Interface: LIN
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H11L2SR2M ONSEMI H11L3M-D.PDF Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L2
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MMBZ5223BLT1G MMBZ5223BLT1G ONSEMI MMBZ52xxBLT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 75uA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 75µA
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 2.7V
Manufacturer series: MMBZ52xxBLT1G
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NUF2230XV6T1G ONSEMI nuf2230xv6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SOT563; Ch: 2; reel,tape
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Semiconductor structure: bidirectional
Type of diode: TVS array
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MBR160RLG MBR160RLG ONSEMI mbr150-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1932 шт:
термін постачання 21-30 дні (днів)
23+18.89 грн
30+13.56 грн
33+12.20 грн
100+9.01 грн
500+8.53 грн
Мінімальне замовлення: 23
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HCPL3700M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F92711F80C7&compId=HCPL3700M.pdf?ci_sign=5e444846055b08299c6c57066e4784cc768e4734 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP8; 4kV/μs
Mounting: THT
Number of channels: 1
Case: DIP8
Slew rate: 4kV/μs
Turn-on time: 45µs
Output voltage: -0.5...20V
Insulation voltage: 5kV
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-off time: 0.5µs
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M74VHC1GT08DFT2G M74VHC1GT08DFT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE38C8647FEE0C7&compId=M74VHC1GT08.PDF?ci_sign=877010fb0514e57b3f897b99d74063d70e9e1235 Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of package: reel; tape
Case: SC88A
Number of channels: single; 1
Mounting: SMD
Family: VHC
Operating temperature: -55...125°C
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...5.5V DC
Technology: TTL
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
MC74VHC1GT08DFT1G ONSEMI mc74vhc1g08-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; -55÷125°C; 1uA; VHC
Type of integrated circuit: digital
Case: SC70-5
Number of channels: 1
Mounting: SMD
Family: VHC
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of outputs: 1
Number of inputs: 2
Kind of gate: AND
Technology: CMOS
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)
3000+2.20 грн
Мінімальне замовлення: 3000
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FDS3580 ONSEMI fds3580-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 34nC
On-state resistance: 29mΩ
Power dissipation: 2.5W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
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MOC3011SR2M MOC3011SR2M ONSEMI moc3023m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Manufacturer series: MOC301XM
Mounting: SMD
Trigger current: 5mA
Type of optocoupler: optotriac
Number of channels: 1
Max. off-state voltage: 3V
Case: PDIP6
Kind of output: triac; without zero voltage crossing driver
Slew rate: 1kV/μs
Insulation voltage: 4.17kV
Output voltage: 250V
на замовлення 995 шт:
термін постачання 21-30 дні (днів)
9+53.24 грн
12+34.45 грн
100+27.11 грн
500+22.57 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
S3MB ONSEMI S3AB-S3MB%20N0563%20REV.B.pdf s3mb-d.pdf S3AB SERIES_M2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
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NRVS3MB ONSEMI s3mb-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Application: automotive industry
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MUR220G ONSEMI mur220-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
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MUR220RLG ONSEMI mur220-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
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FDH3632 ONSEMI fdp3632-d.pdf FAIRS45686-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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FSUSB63UMX ONSEMI FSUSB63-D.PDF Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T
Mounting: SMD
Case: UMLP12
Number of channels: 2
Supply voltage: 2.7...4.4V DC
Type of integrated circuit: analog switch
Kind of output: DP3T
Kind of integrated circuit: multiplexer; USB switch
Operating temperature: -40...85°C
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FDN359AN FDN359AN ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE903C94EADA259&compId=FDN359AN.pdf?ci_sign=a80057f0f9f224c8fd968e6e92eb392f70c0472f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 7nC
Features of semiconductor devices: logic level
на замовлення 455 шт:
термін постачання 21-30 дні (днів)
12+37.78 грн
15+26.87 грн
50+20.25 грн
100+17.86 грн
Мінімальне замовлення: 12
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FDN359BN ONSEMI fdn359bn-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FSV1045V ONSEMI fsv1045v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.39V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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SBRB1045G ONSEMI mbrb1045-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: tube
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SBRB1045T4G ONSEMI mbrb1045-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel; tape
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NLAS1053USG ONSEMI nlas1053-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; US8; 2÷5.5VDC
Operating temperature: -55...125°C
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPST-NO
Case: US8
Type of integrated circuit: analog switch
Quiescent current: 2µA
Number of channels: 1
Supply voltage: 2...5.5V DC
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74LCX08M 74LCX08M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0B26527215EA&compId=74LCX08M.pdf?ci_sign=645d0b8b072418962d2c6aab6a2e0598ec130d59 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
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74LCX08BQX ONSEMI ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw FAIRS46346-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: QFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
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74LCX08MX 74LCX08MX ONSEMI ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
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MC74LCX08DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62D96E73480D3&compId=MC74LCX08-D.pdf?ci_sign=5906c3f45e6d694965b3c26a3ee0013d4cd4e8b2 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; 1.5÷3.6VDC; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Manufacturer series: LCX
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MC74LCX08DTG MC74LCX08DTG ONSEMI mc74lcx08-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
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WMBUS-GEVB ONSEMI Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Interface: M-Bus
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FOD2741B FOD2741B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5B6A87D2AF1EA17&compId=FOD2741B.pdf?ci_sign=461b573736315c3d0156a7cc41e9d322c2b00a88 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Case: DIP8
Insulation voltage: 5kV
Mounting: THT
на замовлення 597 шт:
термін постачання 21-30 дні (днів)
11+39.50 грн
13+32.69 грн
25+31.10 грн
100+29.50 грн
250+28.71 грн
500+27.91 грн
Мінімальне замовлення: 11
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FOD2741A FOD2741A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF80450F5D37E27&compId=FOD2741A.pdf?ci_sign=65c0474e65be19601ccb36a13ba26a4814692d29 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Case: DIP8
Insulation voltage: 5kV
Mounting: THT
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FOD2741BS ONSEMI fod2741b-d.pdf Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
1000+63.55 грн
Мінімальне замовлення: 1000
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SS16T3G ONSEMI ss16-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
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FDMC6675BZ ONSEMI fdmc6675bz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: WDFN8
Pulsed drain current: -32A
Drain-source voltage: -30V
Drain current: -20A
Gate charge: 65nC
On-state resistance: 27mΩ
Power dissipation: 36W
Gate-source voltage: ±25V
Polarisation: unipolar
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BC858CLT3G BC858CLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NSVBC858CLT1G ONSEMI bc856alt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MM74HCT540MTCX MM74HCT540MTCX ONSEMI mm74hct541-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Operating temperature: -40...85°C
Manufacturer series: HCT
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MMSZ5260BT1G MMSZ5260BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 43V
на замовлення 216 шт:
термін постачання 21-30 дні (днів)
63+6.87 грн
162+2.47 грн
205+1.95 грн
Мінімальне замовлення: 63
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df06m df06m ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE797B01887CA95C748&compId=DF005-10m.pdf?ci_sign=a2ba58420bf47aec9f9d95208f646afa11972b67 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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FDS6680A FDS6680A ONSEMI FDS6680A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1577 шт:
термін постачання 21-30 дні (днів)
8+56.68 грн
10+45.93 грн
25+40.67 грн
50+36.52 грн
100+32.77 грн
250+31.90 грн
Мінімальне замовлення: 8
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FDB8896 FDB8896 ONSEMI FDB8896-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
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BZX84C5V1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF98B27300A9E259&compId=BZX84Cxx.pdf?ci_sign=2b64e7148c8f682fa9c3b0aa3b135b1ebc6abd8a Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
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BZX84C5V1LT3G BZX84C5V1LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
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SZBZX84C5V1ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C5V1LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Application: automotive industry
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NCP161AMX300TBG ONSEMI ncp161-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 450mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.45A
Voltage drop: 0.275V
Output voltage: 3V
Number of channels: 1
Input voltage: 1.9...5.5V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP161
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NCP161AMX330TBG ONSEMI ncp161-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 450mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.45A
Voltage drop: 0.26V
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.9...5.5V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP161
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NCP171AMX330325TCG ONSEMI ncp171-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 55mV
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.7...5.5V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
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NVMTS1D5N08H nvmts1d5n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 273A; Idm: 900A; 129W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 129W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 125nC
On-state resistance: 1.4mΩ
Drain-source voltage: 80V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NVMTS1D6N10MCTXG nvmts1d6n10mc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 273A; Idm: 900A; 146W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 146W
Case: DFNW8
Mounting: SMD
Kind of package: reel; tape
Gate charge: 106nC
On-state resistance: 1.7mΩ
Drain-source voltage: 100V
Drain current: 273A
Pulsed drain current: 900A
Gate-source voltage: ±20V
Kind of channel: enhancement
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NCP152MX280120TCG ncp152-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 150mA; XDFN6
Mounting: SMD
Tolerance: ±2%
Operating temperature: -40...85°C
Manufacturer series: NCP152
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN6
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
Output voltage: 1.2V; 2.8V
Input voltage: 1.9...5.25V
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FDH333 ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw
FDH333
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1.15V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 1A
Case: DO35
Power dissipation: 0.5W
Leakage current: 0.5µA
Max. forward voltage: 1.15V
Max. load current: 0.6A
Capacitance: 6pF
на замовлення 2714 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.02 грн
54+7.42 грн
100+5.26 грн
250+4.58 грн
500+4.12 грн
1000+3.70 грн
Мінімальне замовлення: 36
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FDH333TR ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 0.5A; reel,tape; Ifsm: 4A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
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FDMC86324 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF5A2BDEE67E28&compId=FDMC86324.pdf?ci_sign=d8ca39e5aa8dc96b53f27e3ed61837eed76dd64a
FDMC86324
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: PQFN8
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 40mΩ
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 80V
Kind of channel: enhancement
Mounting: SMD
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MURA120T3G mura115t3-d.pdf
MURA120T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 1724 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.90 грн
25+16.35 грн
50+12.44 грн
100+11.08 грн
250+9.57 грн
500+8.61 грн
1000+7.97 грн
Мінімальне замовлення: 18
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MMSZ22T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689C3A070C08745&compId=MMSZxxxT1G.PDF?ci_sign=42b6745fc512dc937e890dd622bc6bb53746917f
MMSZ22T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZxxT1G
на замовлення 13985 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.87 грн
76+5.26 грн
85+4.70 грн
131+3.05 грн
163+2.45 грн
500+1.64 грн
1000+1.48 грн
1500+1.41 грн
3000+1.40 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
BCP68T1G bcp68t1-d.pdf
BCP68T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
на замовлення 968 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+36.92 грн
18+22.41 грн
25+18.50 грн
100+13.87 грн
500+10.29 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SBCP68T1G bcp68t1-d.pdf
SBCP68T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 50...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
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NSVBCP68T1G bcp68t1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
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RURG3060-F085 rurg3060_f085-d.pdf
RURG3060-F085
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 80ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 80ns
Application: automotive industry
на замовлення 69 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+265.34 грн
3+224.86 грн
10+177.82 грн
30+173.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RURG3060 pVersion=0046&contRep=ZT&docId=E20E076F090AF2F1A303005056AB0C4F&compId=RURG3060.pdf?ci_sign=096424324fa4165118f1f0b0d48c400328ce5e8d
RURG3060
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 325A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 325A
Case: TO247-2
Reverse recovery time: 60ns
Max. load current: 70A
Max. forward voltage: 1.5V
Power dissipation: 125W
Features of semiconductor devices: ultrafast switching
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NCV7430D20R2G ncv7430-d.pdf
NCV7430D20R2G
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; SO14; Ch: 3
Application: automotive industry; for LED applications
Kind of integrated circuit: transceiver
Case: SO14
Type of integrated circuit: interface
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 3
Supply voltage: 5.5...18V DC
Interface: LIN
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H11L2SR2M H11L3M-D.PDF
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L2
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MMBZ5223BLT1G MMBZ52xxBLT1G.PDF
MMBZ5223BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode; 75uA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 75µA
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 2.7V
Manufacturer series: MMBZ52xxBLT1G
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NUF2230XV6T1G nuf2230xv6-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SOT563; Ch: 2; reel,tape
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Semiconductor structure: bidirectional
Type of diode: TVS array
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MBR160RLG mbr150-d.pdf
MBR160RLG
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1932 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.89 грн
30+13.56 грн
33+12.20 грн
100+9.01 грн
500+8.53 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
HCPL3700M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F92711F80C7&compId=HCPL3700M.pdf?ci_sign=5e444846055b08299c6c57066e4784cc768e4734
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5kV; DIP8; 4kV/μs
Mounting: THT
Number of channels: 1
Case: DIP8
Slew rate: 4kV/μs
Turn-on time: 45µs
Output voltage: -0.5...20V
Insulation voltage: 5kV
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-off time: 0.5µs
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M74VHC1GT08DFT2G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE38C8647FEE0C7&compId=M74VHC1GT08.PDF?ci_sign=877010fb0514e57b3f897b99d74063d70e9e1235
M74VHC1GT08DFT2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of package: reel; tape
Case: SC88A
Number of channels: single; 1
Mounting: SMD
Family: VHC
Operating temperature: -55...125°C
Number of inputs: 2
Kind of gate: AND
Supply voltage: 2...5.5V DC
Technology: TTL
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
MC74VHC1GT08DFT1G mc74vhc1g08-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; -55÷125°C; 1uA; VHC
Type of integrated circuit: digital
Case: SC70-5
Number of channels: 1
Mounting: SMD
Family: VHC
Operating temperature: -55...125°C
Quiescent current: 1µA
Number of outputs: 1
Number of inputs: 2
Kind of gate: AND
Technology: CMOS
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+2.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
FDS3580 fds3580-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 34nC
On-state resistance: 29mΩ
Power dissipation: 2.5W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
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MOC3011SR2M moc3023m-d.pdf
MOC3011SR2M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Manufacturer series: MOC301XM
Mounting: SMD
Trigger current: 5mA
Type of optocoupler: optotriac
Number of channels: 1
Max. off-state voltage: 3V
Case: PDIP6
Kind of output: triac; without zero voltage crossing driver
Slew rate: 1kV/μs
Insulation voltage: 4.17kV
Output voltage: 250V
на замовлення 995 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+53.24 грн
12+34.45 грн
100+27.11 грн
500+22.57 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
S3MB S3AB-S3MB%20N0563%20REV.B.pdf s3mb-d.pdf S3AB SERIES_M2102.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
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NRVS3MB s3mb-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 80A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 80A
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Application: automotive industry
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MUR220G mur220-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
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MUR220RLG mur220-d.pdf
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; reel,tape; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
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FDH3632 fdp3632-d.pdf FAIRS45686-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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FSUSB63UMX FSUSB63-D.PDF
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer,USB switch; Ch: 2; UMLP12; OUT: DP3T
Mounting: SMD
Case: UMLP12
Number of channels: 2
Supply voltage: 2.7...4.4V DC
Type of integrated circuit: analog switch
Kind of output: DP3T
Kind of integrated circuit: multiplexer; USB switch
Operating temperature: -40...85°C
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FDN359AN pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE903C94EADA259&compId=FDN359AN.pdf?ci_sign=a80057f0f9f224c8fd968e6e92eb392f70c0472f
FDN359AN
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Gate charge: 7nC
Features of semiconductor devices: logic level
на замовлення 455 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.78 грн
15+26.87 грн
50+20.25 грн
100+17.86 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
FDN359BN fdn359bn-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FSV1045V fsv1045v-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: TO277
Max. forward voltage: 0.39V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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SBRB1045G mbrb1045-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: tube
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SBRB1045T4G mbrb1045-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: reel; tape
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NLAS1053USG nlas1053-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; US8; 2÷5.5VDC
Operating temperature: -55...125°C
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPST-NO
Case: US8
Type of integrated circuit: analog switch
Quiescent current: 2µA
Number of channels: 1
Supply voltage: 2...5.5V DC
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74LCX08M pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0B26527215EA&compId=74LCX08M.pdf?ci_sign=645d0b8b072418962d2c6aab6a2e0598ec130d59
74LCX08M
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
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74LCX08BQX ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw FAIRS46346-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; QFN14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: QFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
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74LCX08MX ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw
74LCX08MX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
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MC74LCX08DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62D96E73480D3&compId=MC74LCX08-D.pdf?ci_sign=5906c3f45e6d694965b3c26a3ee0013d4cd4e8b2
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; 1.5÷3.6VDC; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Manufacturer series: LCX
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MC74LCX08DTG mc74lcx08-d.pdf
MC74LCX08DTG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
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WMBUS-GEVB
Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Interface: M-Bus
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FOD2741B pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B5B6A87D2AF1EA17&compId=FOD2741B.pdf?ci_sign=461b573736315c3d0156a7cc41e9d322c2b00a88
FOD2741B
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Case: DIP8
Insulation voltage: 5kV
Mounting: THT
на замовлення 597 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+39.50 грн
13+32.69 грн
25+31.10 грн
100+29.50 грн
250+28.71 грн
500+27.91 грн
Мінімальне замовлення: 11
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FOD2741A pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF80450F5D37E27&compId=FOD2741A.pdf?ci_sign=65c0474e65be19601ccb36a13ba26a4814692d29
FOD2741A
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Type of optocoupler: optocoupler
Kind of output: transistor
Number of channels: 1
CTR@If: 100-200%@10mA
Case: DIP8
Insulation voltage: 5kV
Mounting: THT
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FOD2741BS fod2741b-d.pdf
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+63.55 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
SS16T3G ss16-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
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FDMC6675BZ fdmc6675bz-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Case: WDFN8
Pulsed drain current: -32A
Drain-source voltage: -30V
Drain current: -20A
Gate charge: 65nC
On-state resistance: 27mΩ
Power dissipation: 36W
Gate-source voltage: ±25V
Polarisation: unipolar
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BC858CLT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC858CLT3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NSVBC858CLT1G bc856alt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MM74HCT540MTCX mm74hct541-d.pdf
MM74HCT540MTCX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Operating temperature: -40...85°C
Manufacturer series: HCT
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MMSZ5260BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5260BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 43V
на замовлення 216 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.87 грн
162+2.47 грн
205+1.95 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
df06m pVersion=0046&contRep=ZT&docId=005056AB752F1EE797B01887CA95C748&compId=DF005-10m.pdf?ci_sign=a2ba58420bf47aec9f9d95208f646afa11972b67
df06m
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Electrical mounting: THT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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FDS6680A FDS6680A.pdf
FDS6680A
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1577 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.68 грн
10+45.93 грн
25+40.67 грн
50+36.52 грн
100+32.77 грн
250+31.90 грн
Мінімальне замовлення: 8
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FDB8896 FDB8896-D.pdf
FDB8896
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 80W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Power dissipation: 80W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.4mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
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BZX84C5V1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF98B27300A9E259&compId=BZX84Cxx.pdf?ci_sign=2b64e7148c8f682fa9c3b0aa3b135b1ebc6abd8a
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
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BZX84C5V1LT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C5V1LT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
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SZBZX84C5V1ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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SZBZX84C5V1LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZX84C
Application: automotive industry
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NCP161AMX300TBG ncp161-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 450mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.45A
Voltage drop: 0.275V
Output voltage: 3V
Number of channels: 1
Input voltage: 1.9...5.5V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP161
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NCP161AMX330TBG ncp161-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 450mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Case: XDFN4
Operating temperature: -40...125°C
Output current: 0.45A
Voltage drop: 0.26V
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.9...5.5V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP161
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NCP171AMX330325TCG ncp171-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Tolerance: ±2%
Mounting: SMD
Case: XDFN4
Operating temperature: -40...85°C
Output current: 80mA
Voltage drop: 55mV
Output voltage: 3.3V
Number of channels: 1
Input voltage: 1.7...5.5V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP171
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