Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NM93C06M8 | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NM93C06EM8 | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NM93C06LEM8 | onsemi |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256bit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 250 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Obsolete Write Cycle Time - Word, Page: 15ms Memory Interface: Microwire Memory Organization: 16 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NM93C06LEN | onsemi |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 256bit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: EEPROM Clock Frequency: 250 kHz Memory Format: EEPROM Supplier Device Package: 8-DIP Part Status: Obsolete Write Cycle Time - Word, Page: 15ms Memory Interface: Microwire Memory Organization: 16 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NM93C06LM8 | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NM93C06LN | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FM93C06M8 | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FM93C06N | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP1341B1DR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 75% Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 28V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage Voltage - Start Up: 17 V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74AC174DR2 | onsemi |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74AC174MEL | onsemi |
![]() Packaging: Bulk Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MC74AC174DT | onsemi |
![]() Packaging: Bulk Part Status: Active |
на замовлення 5230 шт: термін постачання 21-31 дні (днів) |
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MC74AC174D | onsemi |
![]() Packaging: Bulk Part Status: Active |
на замовлення 13311 шт: термін постачання 21-31 дні (днів) |
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MC74AC174N | onsemi |
![]() Packaging: Bulk Part Status: Active |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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MC74AC174ML1 | onsemi |
![]() Packaging: Bulk Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SN74LS132MR1 | onsemi |
Description: IC SCHMITT TRIGGER QUAD Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MC14078BFEL | onsemi |
Description: IC GATE NOR 8-INP Packaging: Bulk Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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MC14078BF | onsemi |
Description: LOG CMOS 8-I NOR GATE Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NTMFD4C85NT1G | onsemi |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.13W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-DFN (5x6) |
на замовлення 182728 шт: термін постачання 21-31 дні (днів) |
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NTMKE4890NT1G | onsemi |
![]() Packaging: Bulk Part Status: Active |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NCP1217AD133R2G | onsemi |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 150°C (TJ) Duty Cycle: 46.5% Frequency - Switching: 133kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.6V ~ 16V Supplier Device Package: 8-SOIC Fault Protection: Over Load, Over Temperature, Short Circuit Voltage - Start Up: 12.8 V Part Status: Active |
на замовлення 11049 шт: термін постачання 21-31 дні (днів) |
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LA42152L-E | onsemi |
Description: AUDIO AMPLIFIER BTL 2CH Packaging: Bulk Package / Case: 12-SIP Exposed Pad Output Type: 2-Channel (Stereo) Mounting Type: Through Hole Type: Class AB Operating Temperature: -25°C ~ 75°C (TA) Voltage - Supply: 16.5V ~ 24V Max Output Power x Channels @ Load: 15W x 2 @ 8Ohm Supplier Device Package: 12-SIPH Part Status: Active |
на замовлення 26014 шт: термін постачання 21-31 дні (днів) |
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LA42152-E-ON | onsemi |
Description: AUDIO OUTPUT FOR TV APPLICATION Packaging: Bulk Part Status: Active |
на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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2SA1380E | onsemi |
![]() Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Frequency - Transition: 150MHz Supplier Device Package: TO-126 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 1.2 W |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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NTJD4401NT2 | onsemi |
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на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC20FL1 | onsemi | Description: IC GATE NAND 2CH 4-INP SOEIAJ-14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74HC20FR1 | onsemi | Description: IC GATE NAND 2CH 4-INP SOEIAJ-14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
MC74HC253FR2 | onsemi |
Description: MLTPLXR WITH 3STATE OUTPT Packaging: Bulk Circuit: 2 x 4:1 Type: Multiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 7.8mA, 7.8mA Voltage Supply Source: Single Supply Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MC74HC253F | onsemi |
Description: DUAL 4 INPUT MULTIPLEXER, 3 STAT Packaging: Bulk Circuit: 2 x 4:1 Type: Multiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 7.8mA, 7.8mA Voltage Supply Source: Single Supply Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SMBD1099T3 | onsemi |
Description: SS SOT23 SWCH DIO SPCL Packaging: Bulk Part Status: Active |
на замовлення 340000 шт: термін постачання 21-31 дні (днів) |
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SMBD1099T | onsemi |
Description: SS SOT23 SWCH DIO SPCL Packaging: Bulk Part Status: Active |
на замовлення 327000 шт: термін постачання 21-31 дні (днів) |
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MMUN2235LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMUN2235LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 209 шт: термін постачання 21-31 дні (днів) |
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NL17SG17DFT2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 0.9V ~ 3.6V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: SC-88A (SC-70-5/SOT-353) Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NL17SG17DFT2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 0.9V ~ 3.6V Input Type: Schmitt Trigger Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: SC-88A (SC-70-5/SOT-353) Part Status: Last Time Buy |
на замовлення 2676 шт: термін постачання 21-31 дні (днів) |
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BC213 | onsemi |
Description: TRANS PNP 30V 0.5A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 2mA, 5V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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2SK771-4-TB-E | onsemi |
Description: NCH J-FET Packaging: Bulk Part Status: Active |
на замовлення 19888 шт: термін постачання 21-31 дні (днів) |
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2SK771-5-TB-E | onsemi |
Description: JFET N-CH 20MA 3CP Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 10V Current Drain (Id) - Max: 20 mA Supplier Device Package: 3-CP Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Power - Max: 200 mW Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 10 V |
на замовлення 102500 шт: термін постачання 21-31 дні (днів) |
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2SK777U1-FRN | onsemi |
Description: NCH J-FET Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SK771-5-TB-E | onsemi |
Description: JFET N-CH 20MA 3CP Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 10V Current Drain (Id) - Max: 20 mA Supplier Device Package: 3-CP Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Power - Max: 200 mW Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
LP2950CDT | onsemi |
![]() Packaging: Bulk Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 120 µA Voltage - Input (Max): 30V Number of Regulators: 1 Part Status: Active Voltage Dropout (Max): 0.45V @ 100mA Current - Supply (Max): 12 mA |
на замовлення 542 шт: термін постачання 21-31 дні (днів) |
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NTD85N02RT4 | onsemi |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V |
на замовлення 50295 шт: термін постачання 21-31 дні (днів) |
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NTD85N02R-001 | onsemi |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V |
на замовлення 37921 шт: термін постачання 21-31 дні (днів) |
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NTD85N02RT4G | onsemi |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V |
на замовлення 9472 шт: термін постачання 21-31 дні (днів) |
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NTD85N02R-1G | onsemi |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V |
на замовлення 246305 шт: термін постачання 21-31 дні (днів) |
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LC73872M-TRM-E-ON | onsemi |
Description: DTMF RECEIVER Packaging: Bulk Part Status: Active |
на замовлення 17272 шт: термін постачання 21-31 дні (днів) |
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2SC3902S | onsemi |
![]() Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TO-126ML Part Status: Obsolete Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 1.5 W |
на замовлення 961 шт: термін постачання 21-31 дні (днів) |
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MBR350 | onsemi |
![]() Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A Current - Reverse Leakage @ Vr: 600 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC859BLT3 | onsemi |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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NCV8413DTRKG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 37mOhm Voltage - Load: 42V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 22A Ratio - Input:Output: 1:1 Supplier Device Package: DPAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCV8413DTRKG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 37mOhm Voltage - Load: 42V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 22A Ratio - Input:Output: 1:1 Supplier Device Package: DPAK Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1729 шт: термін постачання 21-31 дні (днів) |
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MC74HCT08HDTR2 | onsemi |
Description: IC GATE AND 4CH 2-INP 14TSSOP Packaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 17ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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1N5225BRL | onsemi |
![]() Packaging: Bulk Part Status: Active |
на замовлення 73974 шт: термін постачання 21-31 дні (днів) |
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NTMFS016N06CT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
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NVTFWS016N06CTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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NTMFD016N06CT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 36W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NVMFS016N06CT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
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NVMFWS016N06CT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
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NVMFWD016N06CT1G | onsemi |
Description: MOSFET 2N-CH 60V 9A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 36W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
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NVMFD016N06CT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 36W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NM93C06M8 |
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Виробник: onsemi
Description: IC EEPROM 256BIT MICROWIRE 8SOIC
Description: IC EEPROM 256BIT MICROWIRE 8SOIC
товару немає в наявності
В кошику
од. на суму грн.
NM93C06EM8 |
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Виробник: onsemi
Description: IC EEPROM 256BIT MICROWIRE 8SOIC
Description: IC EEPROM 256BIT MICROWIRE 8SOIC
товару немає в наявності
В кошику
од. на суму грн.
NM93C06LEM8 |
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Виробник: onsemi
Description: IC EEPROM 256BIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256bit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 16 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 256BIT MICROWIRE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256bit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 16 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
NM93C06LEN |
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Виробник: onsemi
Description: IC EEPROM 256BIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256bit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 16 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 256BIT MICROWIRE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256bit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 250 kHz
Memory Format: EEPROM
Supplier Device Package: 8-DIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 15ms
Memory Interface: Microwire
Memory Organization: 16 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
NM93C06LM8 |
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Виробник: onsemi
Description: IC EEPROM 256BIT MICROWIRE 8SOIC
Description: IC EEPROM 256BIT MICROWIRE 8SOIC
товару немає в наявності
В кошику
од. на суму грн.
NM93C06LN |
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Виробник: onsemi
Description: IC EEPROM 256BIT MICROWIRE 8DIP
Description: IC EEPROM 256BIT MICROWIRE 8DIP
товару немає в наявності
В кошику
од. на суму грн.
FM93C06M8 |
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Виробник: onsemi
Description: IC EEPROM 256BIT MICROWIRE 8SOIC
Description: IC EEPROM 256BIT MICROWIRE 8SOIC
товару немає в наявності
В кошику
од. на суму грн.
FM93C06N |
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Виробник: onsemi
Description: IC EEPROM 256BIT MICROWIRE 8DIP
Description: IC EEPROM 256BIT MICROWIRE 8DIP
товару немає в наявності
В кошику
од. на суму грн.
NCP1341B1DR2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 28V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 28V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 17 V
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
MC74AC174MEL |
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на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1680+ | 12.69 грн |
MC74AC174DT |
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на замовлення 5230 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1680+ | 12.69 грн |
MC74AC174D |
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на замовлення 13311 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1366+ | 15.51 грн |
MC74AC174N |
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на замовлення 2975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1285+ | 16.21 грн |
MC74AC174ML1 |
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на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
993+ | 21.15 грн |
MC14078BFEL |
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2049+ | 11.15 грн |
NTMFD4C85NT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 15.4A 8DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET 2N-CH 30V 15.4A 8DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
на замовлення 182728 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
130+ | 167.74 грн |
NTMKE4890NT1G |
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на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
523+ | 43.52 грн |
NCP1217AD133R2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Duty Cycle: 46.5%
Frequency - Switching: 133kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 16V
Supplier Device Package: 8-SOIC
Fault Protection: Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 12.8 V
Part Status: Active
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Duty Cycle: 46.5%
Frequency - Switching: 133kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 16V
Supplier Device Package: 8-SOIC
Fault Protection: Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 12.8 V
Part Status: Active
на замовлення 11049 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
464+ | 46.00 грн |
LA42152L-E |
Виробник: onsemi
Description: AUDIO AMPLIFIER BTL 2CH
Packaging: Bulk
Package / Case: 12-SIP Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -25°C ~ 75°C (TA)
Voltage - Supply: 16.5V ~ 24V
Max Output Power x Channels @ Load: 15W x 2 @ 8Ohm
Supplier Device Package: 12-SIPH
Part Status: Active
Description: AUDIO AMPLIFIER BTL 2CH
Packaging: Bulk
Package / Case: 12-SIP Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -25°C ~ 75°C (TA)
Voltage - Supply: 16.5V ~ 24V
Max Output Power x Channels @ Load: 15W x 2 @ 8Ohm
Supplier Device Package: 12-SIPH
Part Status: Active
на замовлення 26014 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
164+ | 135.88 грн |
LA42152-E-ON |
на замовлення 11000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
113+ | 197.50 грн |
2SA1380E |
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Виробник: onsemi
Description: TRANS PNP 200V 0.1A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.2 W
Description: TRANS PNP 200V 0.1A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1.2 W
на замовлення 200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
200+ | 21.23 грн |
NTJD4401NT2 |
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Виробник: onsemi
Description: SMALL SIGNAL N-CHANNEL MOSFET
Description: SMALL SIGNAL N-CHANNEL MOSFET
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
MC74HC20FL1 |
Виробник: onsemi
Description: IC GATE NAND 2CH 4-INP SOEIAJ-14
Description: IC GATE NAND 2CH 4-INP SOEIAJ-14
товару немає в наявності
В кошику
од. на суму грн.
MC74HC20FR1 |
Виробник: onsemi
Description: IC GATE NAND 2CH 4-INP SOEIAJ-14
Description: IC GATE NAND 2CH 4-INP SOEIAJ-14
товару немає в наявності
В кошику
од. на суму грн.
MC74HC253FR2 |
Виробник: onsemi
Description: MLTPLXR WITH 3STATE OUTPT
Packaging: Bulk
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Voltage Supply Source: Single Supply
Part Status: Active
Description: MLTPLXR WITH 3STATE OUTPT
Packaging: Bulk
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Voltage Supply Source: Single Supply
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
MC74HC253F |
Виробник: onsemi
Description: DUAL 4 INPUT MULTIPLEXER, 3 STAT
Packaging: Bulk
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Voltage Supply Source: Single Supply
Part Status: Active
Description: DUAL 4 INPUT MULTIPLEXER, 3 STAT
Packaging: Bulk
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Voltage Supply Source: Single Supply
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
SMBD1099T3 |
на замовлення 340000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11539+ | 2.30 грн |
SMBD1099T |
на замовлення 327000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11539+ | 2.30 грн |
MMUN2235LT1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
MMUN2235LT1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 209 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
27+ | 12.07 грн |
45+ | 6.90 грн |
100+ | 4.24 грн |
NL17SG17DFT2G |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 3.6V SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Last Time Buy
Description: IC BUFFER NON-INVERT 3.6V SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Last Time Buy
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NL17SG17DFT2G |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 3.6V SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Last Time Buy
Description: IC BUFFER NON-INVERT 3.6V SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Last Time Buy
на замовлення 2676 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.20 грн |
14+ | 23.18 грн |
25+ | 20.31 грн |
100+ | 10.88 грн |
250+ | 10.20 грн |
500+ | 8.16 грн |
1000+ | 6.15 грн |
BC213 |
Виробник: onsemi
Description: TRANS PNP 30V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11539+ | 2.32 грн |
2SK771-4-TB-E |
на замовлення 19888 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1820+ | 11.32 грн |
2SK771-5-TB-E |
Виробник: onsemi
Description: JFET N-CH 20MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 10V
Current Drain (Id) - Max: 20 mA
Supplier Device Package: 3-CP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 200 mW
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 10 V
Description: JFET N-CH 20MA 3CP
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 10V
Current Drain (Id) - Max: 20 mA
Supplier Device Package: 3-CP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 200 mW
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 10 V
на замовлення 102500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1560+ | 13.45 грн |
2SK771-5-TB-E |
Виробник: onsemi
Description: JFET N-CH 20MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 10V
Current Drain (Id) - Max: 20 mA
Supplier Device Package: 3-CP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 200 mW
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 10 V
Description: JFET N-CH 20MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 10V
Current Drain (Id) - Max: 20 mA
Supplier Device Package: 3-CP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Power - Max: 200 mW
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 10 V
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од. на суму грн.
LP2950CDT |
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Виробник: onsemi
Description: IC REG LINEAR POS ADJ 100MA
Packaging: Bulk
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 120 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Part Status: Active
Voltage Dropout (Max): 0.45V @ 100mA
Current - Supply (Max): 12 mA
Description: IC REG LINEAR POS ADJ 100MA
Packaging: Bulk
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 120 µA
Voltage - Input (Max): 30V
Number of Regulators: 1
Part Status: Active
Voltage Dropout (Max): 0.45V @ 100mA
Current - Supply (Max): 12 mA
на замовлення 542 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
542+ | 40.84 грн |
NTD85N02RT4 |
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Виробник: onsemi
Description: MOSFET N-CH 24V 12A/85A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
Description: MOSFET N-CH 24V 12A/85A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
на замовлення 50295 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1665+ | 13.36 грн |
NTD85N02R-001 |
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Виробник: onsemi
Description: MOSFET N-CH 24V 12A/85A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
Description: MOSFET N-CH 24V 12A/85A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
на замовлення 37921 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1665+ | 13.36 грн |
NTD85N02RT4G |
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Виробник: onsemi
Description: MOSFET N-CH 24V 12A/85A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
Description: MOSFET N-CH 24V 12A/85A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
на замовлення 9472 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1665+ | 13.36 грн |
NTD85N02R-1G |
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Виробник: onsemi
Description: MOSFET N-CH 24V 12A/85A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
Description: MOSFET N-CH 24V 12A/85A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 20 V
на замовлення 246305 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
841+ | 26.73 грн |
LC73872M-TRM-E-ON |
на замовлення 17272 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
161+ | 132.34 грн |
2SC3902S |
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Виробник: onsemi
Description: TRANS NPN 160V 1.5A TO126ML
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-126ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.5 W
Description: TRANS NPN 160V 1.5A TO126ML
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-126ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.5 W
на замовлення 961 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
961+ | 24.53 грн |
MBR350 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 50V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 600 µA @ 50 V
Description: DIODE SCHOTTKY 50V 3A AXIAL
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 600 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
BC859BLT3 |
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Виробник: onsemi
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11539+ | 2.32 грн |
NCV8413DTRKG |
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Виробник: onsemi
Description: LS SMART FET MPW
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 37mOhm
Voltage - Load: 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 22A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Description: LS SMART FET MPW
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 37mOhm
Voltage - Load: 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 22A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
NCV8413DTRKG |
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Виробник: onsemi
Description: LS SMART FET MPW
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 37mOhm
Voltage - Load: 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 22A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Description: LS SMART FET MPW
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 37mOhm
Voltage - Load: 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 22A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1729 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 243.10 грн |
10+ | 148.91 грн |
25+ | 126.78 грн |
100+ | 95.44 грн |
250+ | 83.88 грн |
500+ | 76.77 грн |
1000+ | 69.65 грн |
MC74HCT08HDTR2 |
Виробник: onsemi
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 17ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 17ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2664+ | 8.44 грн |
1N5225BRL |
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на замовлення 73974 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9458+ | 2.12 грн |
NTMFS016N06CT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 15.43 грн |
3000+ | 13.55 грн |
4500+ | 12.88 грн |
7500+ | 11.38 грн |
10500+ | 10.97 грн |
15000+ | 10.56 грн |
NVTFWS016N06CTAG |
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Виробник: onsemi
Description: MOSFET N-CH 60V 8A/32A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 8A/32A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 41.41 грн |
3000+ | 36.99 грн |
4500+ | 36.12 грн |
NTMFD016N06CT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Description: MOSFET 2N-CH 60V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 41.58 грн |
3000+ | 37.47 грн |
4500+ | 36.67 грн |
NVMFS016N06CT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 40.33 грн |
3000+ | 36.01 грн |
4500+ | 36.00 грн |
NVMFWS016N06CT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 45.37 грн |
3000+ | 40.59 грн |
4500+ | 40.23 грн |
NVMFWD016N06CT1G |
Виробник: onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 72.98 грн |
3000+ | 67.59 грн |
NVMFD016N06CT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 67.76 грн |
3000+ | 62.02 грн |