Фото | Назва | Виробник | Інформація |
Доступність |
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NVMFD5C462NLWFT1G | onsemi | Description: MOSFET 2N-CH 40V 84A S08FL |
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FDC6301N_G | onsemi |
Description: MOSFET 2N-CH 25V 0.22A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Obsolete |
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SZNUF6401MNWT1G | onsemi |
Description: XDFN12W12 EMI FILTER WITH ESD Packaging: Tape & Reel (TR) Package / Case: 12-VFDFN Exposed Pad Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm) Mounting Type: Surface Mount, Wettable Flank Type: Low Pass Operating Temperature: -40°C ~ 105°C Values: R = 100Ohm, C = 17pF Height: 0.039" (1.00mm) Attenuation Value: -30dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: Automotive Technology: RC (Pi) Center / Cutoff Frequency: 110MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Active Number of Channels: 6 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NVB5405NT4G | onsemi |
Description: NVB5405 - SINGLE N-CHANNEL POWER Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V |
на замовлення 5600 шт: термін постачання 21-31 дні (днів) |
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CS2001YDWFR20 | onsemi |
Description: IC REG DL BUCK/LNR SYNC 20SOIC Packaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.9V ~ 5.1V Frequency - Switching: 150kHz Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Supplier Device Package: 20-SOIC Voltage/Current - Output 1: -, 1.2A Voltage/Current - Output 2: 5V, 100mA w/LED Driver: No w/Supervisor: No w/Sequencer: No Part Status: Obsolete Number of Outputs: 2 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MC7908CTG | onsemi | Description: IC REG LINEAR -8V 1A TO220AB |
на замовлення 318969 шт: термін постачання 21-31 дні (днів) |
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FSBB20CH60CTSL | onsemi |
Description: MODULE SPM 600V 20A Packaging: Tube Part Status: Obsolete |
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NCS21674DMG200R2G | onsemi |
Description: CURRENT-SHUNT MONITORS, 40 VCOMM Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 195µA (x2 Channels) Slew Rate: 2V/µs Current - Input Bias: 1 µA Voltage - Input Offset: 100 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 -3db Bandwidth: 105 kHz Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
товар відсутній |
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NCS21674DMG200R2G | onsemi |
Description: CURRENT-SHUNT MONITORS, 40 VCOMM Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 195µA (x2 Channels) Slew Rate: 2V/µs Current - Input Bias: 1 µA Voltage - Input Offset: 100 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 -3db Bandwidth: 105 kHz Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 3931 шт: термін постачання 21-31 дні (днів) |
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SURS8160T3 | onsemi |
Description: DIODE GEN PURP 600V 1A SMB Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
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LMV358IDR2G | onsemi |
Description: LV R2R DUAL OP AMP EXTENDED TEMP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C (TA) Current - Supply: 210µA (x2 Channels) Slew Rate: 1V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 1 nA Voltage - Input Offset: 1.7 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 2 Current - Output / Channel: 160 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 47500 шт: термін постачання 21-31 дні (днів) |
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FDMC5614P-B8 | onsemi | Description: FET -60V 100.0 MOHM MLP33 |
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FDMC5614P-L701 | onsemi | Description: MOSFET P-CH 60V 8MLP |
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NVMFWS015N10MCLT1G | onsemi |
Description: PTNG 100V LL NCH SO-8FL WETTABLE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V Power Dissipation (Max): 3W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 3V @ 77µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V Qualification: AEC-Q101 |
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NCV7724DQBR2G | onsemi |
Description: IC HALF BRIDGE DRVR 1.1A 24SSOP Packaging: Tape & Reel (TR) Features: Charge Pump Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: Logic, PWM, SPI, Serial Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (8) Voltage - Supply: 3.15V ~ 5.25V Rds On (Typ): 800mOhm LS, 800mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 1.1A Current - Peak Output: 1.1A Technology: NMOS Voltage - Load: 3.15V ~ 5.25V Supplier Device Package: 24-SSOP-EP Fault Protection: Over Current, Over Temperature, UVLO Load Type: Inductive, Capacitive Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
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NCV7724DQBR2G | onsemi |
Description: IC HALF BRIDGE DRVR 1.1A 24SSOP Features: Charge Pump Packaging: Cut Tape (CT) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: Logic, PWM, SPI, Serial Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (8) Voltage - Supply: 3.15V ~ 5.25V Rds On (Typ): 800mOhm LS, 800mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 1.1A Current - Peak Output: 1.1A Technology: NMOS Voltage - Load: 3.15V ~ 5.25V Supplier Device Package: 24-SSOP-EP Fault Protection: Over Current, Over Temperature, UVLO Load Type: Inductive, Capacitive Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1006 шт: термін постачання 21-31 дні (днів) |
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NCV7728DPR2G | onsemi | Description: IC DRIVER HALF BRIDGE HEX 24SSOP |
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NCV7720DQAR2G | onsemi | Description: IC MOTOR DRIVER 24SSOP |
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NCV7728DPAR2G | onsemi | Description: IC DRIVER HALF BRIDGE HEX 24SSOP |
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MMBZ5242ELT1G | onsemi | Description: DIODE ZENER 12V 225MW SOT23-3 |
на замовлення 573 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ5242BLT1 | onsemi |
Description: DIODE ZENER Tolerance: ±5% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V |
на замовлення 8878 шт: термін постачання 21-31 дні (днів) |
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LA2000S-E | onsemi | Description: AUDIO ICS |
на замовлення 55825 шт: термін постачання 21-31 дні (днів) |
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LA2000S-MTK-E | onsemi | Description: AUDIO IC |
на замовлення 5400 шт: термін постачання 21-31 дні (днів) |
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SC2903VDR2 | onsemi |
Description: IC OPAMP 8SOIC Packaging: Bulk Part Status: Active |
на замовлення 4110 шт: термін постачання 21-31 дні (днів) |
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NCV431BVDR2G | onsemi |
Description: IC VREF SHUNT ADJ 0.4% 8SOIC Packaging: Tape & Reel (TR) Tolerance: ±0.4% Package / Case: 8-SOIC (0.154", 3.90mm Width) Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 2.495V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCV431BVDR2G | onsemi |
Description: IC VREF SHUNT ADJ 0.4% 8SOIC Packaging: Cut Tape (CT) Tolerance: ±0.4% Package / Case: 8-SOIC (0.154", 3.90mm Width) Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 2.495V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCP431AVDR2G | onsemi |
Description: IC VREF SHUNT ADJ 1% 8SOIC Packaging: Tape & Reel (TR) Tolerance: ±1% Package / Case: 8-SOIC (0.154", 3.90mm Width) Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 2.5V Part Status: Obsolete Current - Cathode: 100 mA Current - Output: 40 µA Voltage - Output (Max): 36 V |
товар відсутній |
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NCP431AVDR2G | onsemi |
Description: IC VREF SHUNT ADJ 1% 8SOIC Tolerance: ±1% Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 2.5V Part Status: Obsolete Current - Cathode: 100 mA Current - Output: 40 µA Voltage - Output (Max): 36 V |
на замовлення 1408 шт: термін постачання 21-31 дні (днів) |
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NCV33201VDR2G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -55°C ~ 125°C Current - Supply: 1.125mA Slew Rate: 1V/µs Gain Bandwidth Product: 2.2 MHz Current - Input Bias: 80 nA Voltage - Input Offset: 8 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 1 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 12 V |
на замовлення 69162 шт: термін постачання 21-31 дні (днів) |
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SC2903VDR2G | onsemi |
Description: IC COMPARATOR 2 GEN PUR 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: CMOS, DTL, ECL, MOS, TTL Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Voltage - Supply, Single/Dual (±): 2V ~ 36V Supplier Device Package: 8-SOIC Current - Output (Typ): 20mA Grade: Automotive Part Status: Obsolete Qualification: AEC-Q100 |
на замовлення 326677 шт: термін постачання 21-31 дні (днів) |
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SZESD9M5.0ST5G | onsemi |
Description: SOD-923 EUT SNGL CPR PBF Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 2.5pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 9.8V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 160000 шт: термін постачання 21-31 дні (днів) |
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CAT3643HV3-GT2 | onsemi |
Description: IC LED DRV RGLT MULT-STEP 16TQFN Packaging: Bulk Package / Case: 16-WFQFN Exposed Pad Voltage - Output: 7V Mounting Type: Surface Mount Number of Outputs: 3 Frequency: 1MHz ~ 1.3MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 32mA Internal Switch(s): Yes Topology: Switched Capacitor (Charge Pump) Supplier Device Package: 16-TQFN (3x3) Dimming: Multi-Step Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 5.5V Part Status: Obsolete |
на замовлення 22000 шт: термін постачання 21-31 дні (днів) |
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CAT3644HV3-GT2 | onsemi |
Description: IC LED DRV RGLT MULT-STEP 16TQFN Packaging: Bulk Package / Case: 16-WFQFN Exposed Pad Voltage - Output: 7V Mounting Type: Surface Mount Number of Outputs: 4 Frequency: 1MHz ~ 1.3MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 25mA Internal Switch(s): Yes Topology: Switched Capacitor (Charge Pump) Supplier Device Package: 16-TQFN (3x3) Dimming: Multi-Step Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 5.5V Part Status: Obsolete |
на замовлення 236378 шт: термін постачання 21-31 дні (днів) |
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NSVF4020SG4T1G | onsemi |
Description: RF TRANS NPN 8V 16GHZ SC82FL/MCP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 17.5dB Power - Max: 400mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 8V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 16GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Supplier Device Package: SC-82FL/MCPH4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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NSVF4020SG4T1G | onsemi |
Description: RF TRANS NPN 8V 16GHZ SC82FL/MCP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 17.5dB Power - Max: 400mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 8V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Frequency - Transition: 16GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Supplier Device Package: SC-82FL/MCPH4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 80315 шт: термін постачання 21-31 дні (днів) |
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FFLMC74HC138ADR2G | onsemi | Description: IC REG LINEAR |
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BBL4001 | onsemi | Description: MOSFET N-CH 60V 74A TO220-3 FP |
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SC7S32FER | onsemi | Description: LOG CMOS GATE OR |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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SC7S32FEL | onsemi | Description: LOG CMOS GATE OR |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SC7S08FEL | onsemi |
Description: LOG CMOS GATE AND Packaging: Bulk |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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SC7S08FER | onsemi |
Description: LOG CMOS GATE AND Packaging: Bulk |
на замовлення 81000 шт: термін постачання 21-31 дні (днів) |
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SC7S02FEL | onsemi | Description: LOG CMOS GATE NOR |
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SECO-RSL10-TAG-GEVB | onsemi | Description: RSL10 ASSET TAG EVAL KIT |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C638NLWFT1G | onsemi |
Description: MOSFET N-CH 60V 26A/133A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Qualification: AEC-Q101 |
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NVMFS5C638NLWFT1G | onsemi |
Description: MOSFET N-CH 60V 26A/133A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 4W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1322 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C410NLAFT1G | onsemi |
Description: MOSFET N-CH 40V 50A/330A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 301500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C410NLAFT1G | onsemi |
Description: MOSFET N-CH 40V 50A/330A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 301500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C410NLWFET1G | onsemi |
Description: T6 40V SO8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc) Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V |
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NVMFS5C410NWFET1G | onsemi |
Description: T6-40V N 0.92 MOHMS SL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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NVMFS4C05NT1G | onsemi |
Description: MOSFET N-CH 30V 24.7A/116A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 3.61W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NVMFS4C05NT1G | onsemi |
Description: MOSFET N-CH 30V 24.7A/116A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 3.61W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V |
на замовлення 4310 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C628NLT1G | onsemi |
Description: MOSFET N-CH 60V 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 135µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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NVMFS5C628NLT1G | onsemi |
Description: MOSFET N-CH 60V 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 135µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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NVMFS5C460NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 21A/78A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
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NVMFS5C460NLWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 21A/78A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
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NVMFS5C442NAFT1G | onsemi | Description: MOSFET N-CH 40V 29A/140A 5DFN |
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NVMFS5C442NAFT1G | onsemi | Description: MOSFET N-CH 40V 29A/140A 5DFN |
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NVMFS5C456NT1G | onsemi | Description: MOSFET N-CH 40V 20A/80A 5DFN |
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NVMFS5C456NT1G | onsemi | Description: MOSFET N-CH 40V 20A/80A 5DFN |
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NVMFS5C456NLAFT1G | onsemi |
Description: MOSFET N-CH 40V 87A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
товар відсутній |
FDC6301N_G |
Виробник: onsemi
Description: MOSFET 2N-CH 25V 0.22A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Description: MOSFET 2N-CH 25V 0.22A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 220mA
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
товар відсутній
SZNUF6401MNWT1G |
Виробник: onsemi
Description: XDFN12W12 EMI FILTER WITH ESD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount, Wettable Flank
Type: Low Pass
Operating Temperature: -40°C ~ 105°C
Values: R = 100Ohm, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Automotive
Technology: RC (Pi)
Center / Cutoff Frequency: 110MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Description: XDFN12W12 EMI FILTER WITH ESD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount, Wettable Flank
Type: Low Pass
Operating Temperature: -40°C ~ 105°C
Values: R = 100Ohm, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Automotive
Technology: RC (Pi)
Center / Cutoff Frequency: 110MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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3000+ | 8.86 грн |
NVB5405NT4G |
Виробник: onsemi
Description: NVB5405 - SINGLE N-CHANNEL POWER
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V
Description: NVB5405 - SINGLE N-CHANNEL POWER
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V
на замовлення 5600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
214+ | 93.36 грн |
CS2001YDWFR20 |
Виробник: onsemi
Description: IC REG DL BUCK/LNR SYNC 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.9V ~ 5.1V
Frequency - Switching: 150kHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 20-SOIC
Voltage/Current - Output 1: -, 1.2A
Voltage/Current - Output 2: 5V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Obsolete
Number of Outputs: 2
Description: IC REG DL BUCK/LNR SYNC 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.9V ~ 5.1V
Frequency - Switching: 150kHz
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Supplier Device Package: 20-SOIC
Voltage/Current - Output 1: -, 1.2A
Voltage/Current - Output 2: 5V, 100mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Obsolete
Number of Outputs: 2
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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175+ | 116.3 грн |
MC7908CTG |
Виробник: onsemi
Description: IC REG LINEAR -8V 1A TO220AB
Description: IC REG LINEAR -8V 1A TO220AB
на замовлення 318969 шт:
термін постачання 21-31 дні (днів)FSBB20CH60CTSL |
товар відсутній
NCS21674DMG200R2G |
Виробник: onsemi
Description: CURRENT-SHUNT MONITORS, 40 VCOMM
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 195µA (x2 Channels)
Slew Rate: 2V/µs
Current - Input Bias: 1 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
-3db Bandwidth: 105 kHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: CURRENT-SHUNT MONITORS, 40 VCOMM
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 195µA (x2 Channels)
Slew Rate: 2V/µs
Current - Input Bias: 1 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
-3db Bandwidth: 105 kHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
товар відсутній
NCS21674DMG200R2G |
Виробник: onsemi
Description: CURRENT-SHUNT MONITORS, 40 VCOMM
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 195µA (x2 Channels)
Slew Rate: 2V/µs
Current - Input Bias: 1 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
-3db Bandwidth: 105 kHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: CURRENT-SHUNT MONITORS, 40 VCOMM
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 195µA (x2 Channels)
Slew Rate: 2V/µs
Current - Input Bias: 1 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
-3db Bandwidth: 105 kHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 3931 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 78 грн |
10+ | 66.97 грн |
25+ | 63.53 грн |
100+ | 45.8 грн |
250+ | 40.48 грн |
500+ | 38.35 грн |
1000+ | 29.34 грн |
SURS8160T3 |
Виробник: onsemi
Description: DIODE GEN PURP 600V 1A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товар відсутній
LMV358IDR2G |
Виробник: onsemi
Description: LV R2R DUAL OP AMP EXTENDED TEMP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 210µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: LV R2R DUAL OP AMP EXTENDED TEMP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C (TA)
Current - Supply: 210µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1.7 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 160 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 47500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 13.74 грн |
5000+ | 12.32 грн |
12500+ | 11.68 грн |
25000+ | 10.71 грн |
NVMFWS015N10MCLT1G |
Виробник: onsemi
Description: PTNG 100V LL NCH SO-8FL WETTABLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL NCH SO-8FL WETTABLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
товар відсутній
NCV7724DQBR2G |
Виробник: onsemi
Description: IC HALF BRIDGE DRVR 1.1A 24SSOP
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI, Serial
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3.15V ~ 5.25V
Rds On (Typ): 800mOhm LS, 800mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.1A
Current - Peak Output: 1.1A
Technology: NMOS
Voltage - Load: 3.15V ~ 5.25V
Supplier Device Package: 24-SSOP-EP
Fault Protection: Over Current, Over Temperature, UVLO
Load Type: Inductive, Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: IC HALF BRIDGE DRVR 1.1A 24SSOP
Packaging: Tape & Reel (TR)
Features: Charge Pump
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI, Serial
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3.15V ~ 5.25V
Rds On (Typ): 800mOhm LS, 800mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.1A
Current - Peak Output: 1.1A
Technology: NMOS
Voltage - Load: 3.15V ~ 5.25V
Supplier Device Package: 24-SSOP-EP
Fault Protection: Over Current, Over Temperature, UVLO
Load Type: Inductive, Capacitive
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
NCV7724DQBR2G |
Виробник: onsemi
Description: IC HALF BRIDGE DRVR 1.1A 24SSOP
Features: Charge Pump
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI, Serial
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3.15V ~ 5.25V
Rds On (Typ): 800mOhm LS, 800mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.1A
Current - Peak Output: 1.1A
Technology: NMOS
Voltage - Load: 3.15V ~ 5.25V
Supplier Device Package: 24-SSOP-EP
Fault Protection: Over Current, Over Temperature, UVLO
Load Type: Inductive, Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: IC HALF BRIDGE DRVR 1.1A 24SSOP
Features: Charge Pump
Packaging: Cut Tape (CT)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI, Serial
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3.15V ~ 5.25V
Rds On (Typ): 800mOhm LS, 800mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 1.1A
Current - Peak Output: 1.1A
Technology: NMOS
Voltage - Load: 3.15V ~ 5.25V
Supplier Device Package: 24-SSOP-EP
Fault Protection: Over Current, Over Temperature, UVLO
Load Type: Inductive, Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1006 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 300.43 грн |
10+ | 259.74 грн |
25+ | 245.54 грн |
100+ | 189.47 грн |
250+ | 170.02 грн |
500+ | 163.87 грн |
1000+ | 133.99 грн |
MMBZ5242ELT1G |
Виробник: onsemi
Description: DIODE ZENER 12V 225MW SOT23-3
Description: DIODE ZENER 12V 225MW SOT23-3
на замовлення 573 шт:
термін постачання 21-31 дні (днів)SZMMBZ5242BLT1 |
Виробник: onsemi
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
на замовлення 8878 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4438+ | 5.06 грн |
LA2000S-E |
Виробник: onsemi
Description: AUDIO ICS
Description: AUDIO ICS
на замовлення 55825 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1202+ | 16.84 грн |
LA2000S-MTK-E |
Виробник: onsemi
Description: AUDIO IC
Description: AUDIO IC
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1202+ | 16.84 грн |
SC2903VDR2 |
на замовлення 4110 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
952+ | 21.34 грн |
NCV431BVDR2G |
Виробник: onsemi
Description: IC VREF SHUNT ADJ 0.4% 8SOIC
Packaging: Tape & Reel (TR)
Tolerance: ±0.4%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC VREF SHUNT ADJ 0.4% 8SOIC
Packaging: Tape & Reel (TR)
Tolerance: ±0.4%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 18.78 грн |
NCV431BVDR2G |
Виробник: onsemi
Description: IC VREF SHUNT ADJ 0.4% 8SOIC
Packaging: Cut Tape (CT)
Tolerance: ±0.4%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC VREF SHUNT ADJ 0.4% 8SOIC
Packaging: Cut Tape (CT)
Tolerance: ±0.4%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52 грн |
10+ | 44.23 грн |
25+ | 41.53 грн |
100+ | 29.54 грн |
250+ | 25.15 грн |
500+ | 23.89 грн |
1000+ | 17.93 грн |
NCP431AVDR2G |
Виробник: onsemi
Description: IC VREF SHUNT ADJ 1% 8SOIC
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Current - Cathode: 100 mA
Current - Output: 40 µA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% 8SOIC
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Current - Cathode: 100 mA
Current - Output: 40 µA
Voltage - Output (Max): 36 V
товар відсутній
NCP431AVDR2G |
Виробник: onsemi
Description: IC VREF SHUNT ADJ 1% 8SOIC
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Current - Cathode: 100 mA
Current - Output: 40 µA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% 8SOIC
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Current - Cathode: 100 mA
Current - Output: 40 µA
Voltage - Output (Max): 36 V
на замовлення 1408 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.55 грн |
10+ | 30.88 грн |
25+ | 28.85 грн |
100+ | 20.11 грн |
250+ | 17.02 грн |
500+ | 16.25 грн |
1000+ | 11.79 грн |
NCV33201VDR2G |
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -55°C ~ 125°C
Current - Supply: 1.125mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 80 nA
Voltage - Input Offset: 8 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 12 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -55°C ~ 125°C
Current - Supply: 1.125mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 80 nA
Voltage - Input Offset: 8 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 12 V
на замовлення 69162 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1072+ | 20.22 грн |
SC2903VDR2G |
Виробник: onsemi
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, DTL, ECL, MOS, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Voltage - Supply, Single/Dual (±): 2V ~ 36V
Supplier Device Package: 8-SOIC
Current - Output (Typ): 20mA
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, DTL, ECL, MOS, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Voltage - Supply, Single/Dual (±): 2V ~ 36V
Supplier Device Package: 8-SOIC
Current - Output (Typ): 20mA
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
на замовлення 326677 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1276+ | 16 грн |
SZESD9M5.0ST5G |
Виробник: onsemi
Description: SOD-923 EUT SNGL CPR PBF
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: SOD-923 EUT SNGL CPR PBF
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 4.17 грн |
16000+ | 3.47 грн |
24000+ | 3.41 грн |
56000+ | 2.65 грн |
CAT3643HV3-GT2 |
Виробник: onsemi
Description: IC LED DRV RGLT MULT-STEP 16TQFN
Packaging: Bulk
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 3
Frequency: 1MHz ~ 1.3MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 32mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Multi-Step
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Description: IC LED DRV RGLT MULT-STEP 16TQFN
Packaging: Bulk
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 3
Frequency: 1MHz ~ 1.3MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 32mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Multi-Step
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
544+ | 39.72 грн |
CAT3644HV3-GT2 |
Виробник: onsemi
Description: IC LED DRV RGLT MULT-STEP 16TQFN
Packaging: Bulk
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 1MHz ~ 1.3MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Multi-Step
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Description: IC LED DRV RGLT MULT-STEP 16TQFN
Packaging: Bulk
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 1MHz ~ 1.3MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Dimming: Multi-Step
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
на замовлення 236378 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
523+ | 41.16 грн |
NSVF4020SG4T1G |
Виробник: onsemi
Description: RF TRANS NPN 8V 16GHZ SC82FL/MCP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 17.5dB
Power - Max: 400mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: SC-82FL/MCPH4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: RF TRANS NPN 8V 16GHZ SC82FL/MCP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 17.5dB
Power - Max: 400mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: SC-82FL/MCPH4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 14.5 грн |
6000+ | 13 грн |
15000+ | 12.52 грн |
30000+ | 11.3 грн |
NSVF4020SG4T1G |
Виробник: onsemi
Description: RF TRANS NPN 8V 16GHZ SC82FL/MCP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 17.5dB
Power - Max: 400mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: SC-82FL/MCPH4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: RF TRANS NPN 8V 16GHZ SC82FL/MCP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Gain: 17.5dB
Power - Max: 400mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: SC-82FL/MCPH4
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 80315 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 37.55 грн |
10+ | 31.78 грн |
25+ | 29.85 грн |
100+ | 22.86 грн |
250+ | 21.24 грн |
500+ | 18.07 грн |
1000+ | 14.22 грн |
SC7S32FER |
Виробник: onsemi
Description: LOG CMOS GATE OR
Description: LOG CMOS GATE OR
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)SC7S32FEL |
Виробник: onsemi
Description: LOG CMOS GATE OR
Description: LOG CMOS GATE OR
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)SC7S08FEL |
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2959+ | 7.22 грн |
SC7S08FER |
на замовлення 81000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2959+ | 7.22 грн |
SECO-RSL10-TAG-GEVB |
Виробник: onsemi
Description: RSL10 ASSET TAG EVAL KIT
Description: RSL10 ASSET TAG EVAL KIT
на замовлення 1 шт:
термін постачання 21-31 дні (днів)NVMFS5C638NLWFT1G |
Виробник: onsemi
Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
NVMFS5C638NLWFT1G |
Виробник: onsemi
Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 26A/133A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1322 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 198.6 грн |
10+ | 160.71 грн |
100+ | 130.03 грн |
500+ | 108.47 грн |
NVMFS5C410NLAFT1G |
Виробник: onsemi
Description: MOSFET N-CH 40V 50A/330A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 50A/330A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
на замовлення 301500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 133.6 грн |
3000+ | 121.14 грн |
NVMFS5C410NLAFT1G |
Виробник: onsemi
Description: MOSFET N-CH 40V 50A/330A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 50A/330A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
на замовлення 301500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 258.54 грн |
10+ | 208.91 грн |
100+ | 169.04 грн |
500+ | 141.01 грн |
NVMFS5C410NLWFET1G |
Виробник: onsemi
Description: T6 40V SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Description: T6 40V SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
товар відсутній
NVMFS5C410NWFET1G |
Виробник: onsemi
Description: T6-40V N 0.92 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 0.92 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
NVMFS4C05NT1G |
Виробник: onsemi
Description: MOSFET N-CH 30V 24.7A/116A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.61W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Description: MOSFET N-CH 30V 24.7A/116A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.61W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1500+ | 63.75 грн |
3000+ | 57.16 грн |
NVMFS4C05NT1G |
Виробник: onsemi
Description: MOSFET N-CH 30V 24.7A/116A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.61W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Description: MOSFET N-CH 30V 24.7A/116A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.61W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
на замовлення 4310 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 129.99 грн |
10+ | 112.17 грн |
100+ | 90.18 грн |
500+ | 69.53 грн |
NVMFS5C628NLT1G |
Виробник: onsemi
Description: MOSFET N-CH 60V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
NVMFS5C628NLT1G |
Виробник: onsemi
Description: MOSFET N-CH 60V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
NVMFS5C460NLWFAFT1G |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 40V 21A/78A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
товар відсутній
NVMFS5C460NLWFAFT1G |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 40V 21A/78A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
товар відсутній
NVMFS5C456NLAFT1G |
Виробник: onsemi
Description: MOSFET N-CH 40V 87A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 40V 87A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товар відсутній