Продукція > PANJIT INTERNATIONAL INC. > Всі товари виробника PANJIT INTERNATIONAL INC. (11487) > Сторінка 168 з 192
| Фото | Назва | Виробник | Інформація |
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SS1030HEWS_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 30V 1A SOD323HEPackaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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SS1030HEWS_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 30V 1A SOD323HEPackaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-323HE Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 12057 шт: термін постачання 21-31 дні (днів) |
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SBA230AL_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 30V 2A SOD123FLPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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SBA230AL_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 30V 2A SOD123FLPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 30 V |
на замовлення 25705 шт: термін постачання 21-31 дні (днів) |
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MBR10H150PC_R2_00701 | Panjit International Inc. |
Description: DIODE SCHOTTKY 150V 10A TO277CPackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 240pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277C Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Current - Reverse Leakage @ Vr: 550 nA @ 150 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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MBR10H150PC_R2_00701 | Panjit International Inc. |
Description: DIODE SCHOTTKY 150V 10A TO277CPackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 240pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277C Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Current - Reverse Leakage @ Vr: 550 nA @ 150 V |
на замовлення 6566 шт: термін постачання 21-31 дні (днів) |
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MBR10H150PC-AU_R2_007A1 | Panjit International Inc. |
Description: DIODE SCHOTTKY 150V 10A TO277CPackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 240pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277C Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Current - Reverse Leakage @ Vr: 550 nA @ 150 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MBR10H150PC-AU_R2_007A1 | Panjit International Inc. |
Description: DIODE SCHOTTKY 150V 10A TO277CPackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 240pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277C Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Current - Reverse Leakage @ Vr: 550 nA @ 150 V Qualification: AEC-Q101 |
на замовлення 14186 шт: термін постачання 21-31 дні (днів) |
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MMSZ5244AS_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ5244AS_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V |
на замовлення 4838 шт: термін постачання 21-31 дні (днів) |
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MMBZ5244A_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23 Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5244A_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23 Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5244AW_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5244AW_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ5244AS-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ5244AS-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ5244A-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Current - Reverse Leakage @ Vr: 500 nA @ 10.5 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMSZ5244A-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Current - Reverse Leakage @ Vr: 500 nA @ 10.5 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PCDF0465G1_T0_00601 | Panjit International Inc. |
Description: DIODE SIL CARB 650V 4A ITO220ACPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 160pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 1994 шт: термін постачання 21-31 дні (днів) |
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RDXK210_T0_00601 | Panjit International Inc. |
Description: BRIDGE RECT 1PHASE 1KV 2A DXKPackaging: Tube Package / Case: 4-SIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DXK Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 5561 шт: термін постачання 21-31 дні (днів) |
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BZX584C3-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 10 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BZX584C3-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: SOD-523 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 10 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BZT52-B6V8S-AU_R1_000A1 | Panjit International Inc. |
Description: DIODE ZENER 6.8V 200MW SOD323Tolerance: ±2.06% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 3 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52-B6V8S-AU_R1_000A1 | Panjit International Inc. |
Description: DIODE ZENER 6.8V 200MW SOD323Tolerance: ±2.06% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: SOD-323 Grade: Automotive Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 3 V Qualification: AEC-Q101 |
на замовлення 5018 шт: термін постачання 21-31 дні (днів) |
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PCDF0665G1_T0_00601 | Panjit International Inc. |
Description: DIODE SIL CARB 650V 6A ITO220ACPackaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 232pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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1.5SMC170A_R1_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION TRANSIPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.4A Voltage - Reverse Standoff (Typ): 145V Supplier Device Package: SMC (DO-214AB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 162V Voltage - Clamping (Max) @ Ipp: 234V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC170A_R1_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION TRANSIPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.4A Voltage - Reverse Standoff (Typ): 145V Supplier Device Package: SMC (DO-214AB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 162V Voltage - Clamping (Max) @ Ipp: 234V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC170CA_R1_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION TRANSIPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.4A Voltage - Reverse Standoff (Typ): 145V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 162V Voltage - Clamping (Max) @ Ipp: 234V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5SMC170CA_R1_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION TRANSIPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.4A Voltage - Reverse Standoff (Typ): 145V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 162V Voltage - Clamping (Max) @ Ipp: 234V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SMB3EZ33_R1_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION SILICOTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SMB (DO-214AA) Power - Max: 3 W Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SMB3EZ33_R1_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION SILICOTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SMB (DO-214AA) Power - Max: 3 W Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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3EZ33_R2_00001 | Panjit International Inc. |
Description: SILICON ZENER DIODETolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-15 Power - Max: 3 W Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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3EZ33_R2_00001 | Panjit International Inc. |
Description: SILICON ZENER DIODETolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-15 Power - Max: 3 W Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PCDP1665GC_T0_00601 | Panjit International Inc. |
Description: 650V SIC SCHOTTKY BARRIER DIODEPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 446pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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PCDP1665GB_T0_00601 | Panjit International Inc. |
Description: 650V SIC SCHOTTKY BARRIER DIODEPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 995pF @ 1V, 100kHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 16 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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PCDD0665G1_L2_00001 | Panjit International Inc. |
Description: DIODE SIL CARB 650V 6A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 228pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PCDD0665G1_L2_00001 | Panjit International Inc. |
Description: DIODE SIL CARB 650V 6A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 228pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
на замовлення 2996 шт: термін постачання 21-31 дні (днів) |
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MMBZ5254B-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOT-23 Grade: Automotive Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMBZ5254B-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOT-23 Grade: Automotive Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMBZ5254B_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOT-23 Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5254B_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOT-23 Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
на замовлення 2984 шт: термін постачання 21-31 дні (днів) |
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MMBZ5254BW_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5254BW_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5254BV_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOD-523 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5254BV_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOD-523 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5254BTW_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 3 Independent Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOT-363 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ5254BTW_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 3 Independent Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOT-363 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJQ5439E-AU_R2_006A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJQ5439E-AU_R2_006A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2710 шт: термін постачання 21-31 дні (днів) |
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PJQ5437E-AU_R2_006A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJQ5437E-AU_R2_006A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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PJQ5435E-AU_R2_006A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJQ5435E-AU_R2_006A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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PJQ5433E-AU_R2_006A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJQ5433E-AU_R2_006A1 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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PJQ5948V-AU_R2_002A1 | Panjit International Inc. |
Description: MOSFET 2N-CH 40V 10.5A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 32W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060B-8 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJQ5948V-AU_R2_002A1 | Panjit International Inc. |
Description: MOSFET 2N-CH 40V 10.5A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 32W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060B-8 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJQ5839E-AU_R2_002A1 | Panjit International Inc. |
Description: 30V DUAL P-CHANNEL ENHANCEMENT MPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJQ5839E-AU_R2_002A1 | Panjit International Inc. |
Description: 30V DUAL P-CHANNEL ENHANCEMENT MPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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3.0SMCJ18A_R1_00001 | Panjit International Inc. |
Description: TVS DIODE 18VWM 29.2VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 102.8A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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| SS1030HEWS_R1_00001 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 4.75 грн |
| 10000+ | 3.82 грн |
| SS1030HEWS_R1_00001 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A SOD323HE
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323HE
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 12057 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 20.58 грн |
| 25+ | 13.38 грн |
| 100+ | 10.72 грн |
| 500+ | 7.48 грн |
| 1000+ | 6.46 грн |
| 2000+ | 5.95 грн |
| SBA230AL_R1_00001 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.04 грн |
| 6000+ | 4.51 грн |
| 9000+ | 3.74 грн |
| SBA230AL_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Description: DIODE SCHOTTKY 30V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
на замовлення 25705 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.02 грн |
| 17+ | 19.82 грн |
| 100+ | 9.67 грн |
| 500+ | 7.57 грн |
| 1000+ | 5.26 грн |
| MBR10H150PC_R2_00701 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 150V 10A TO277C
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277C
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 550 nA @ 150 V
Description: DIODE SCHOTTKY 150V 10A TO277C
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277C
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 550 nA @ 150 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 18.71 грн |
| MBR10H150PC_R2_00701 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 150V 10A TO277C
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277C
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 550 nA @ 150 V
Description: DIODE SCHOTTKY 150V 10A TO277C
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277C
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 550 nA @ 150 V
на замовлення 6566 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.33 грн |
| 10+ | 45.34 грн |
| 100+ | 33.10 грн |
| 500+ | 24.07 грн |
| 1000+ | 21.16 грн |
| 2000+ | 19.92 грн |
| MBR10H150PC-AU_R2_007A1 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 150V 10A TO277C
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277C
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 550 nA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 10A TO277C
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277C
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 550 nA @ 150 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 20.38 грн |
| 10000+ | 16.57 грн |
| MBR10H150PC-AU_R2_007A1 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 150V 10A TO277C
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277C
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 550 nA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 10A TO277C
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277C
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 550 nA @ 150 V
Qualification: AEC-Q101
на замовлення 14186 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.61 грн |
| 10+ | 41.71 грн |
| 100+ | 31.37 грн |
| 500+ | 23.43 грн |
| 1000+ | 19.57 грн |
| MMSZ5244AS_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5244AS_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
на замовлення 4838 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 16.30 грн |
| 30+ | 11.15 грн |
| 100+ | 6.05 грн |
| 500+ | 4.46 грн |
| 1000+ | 3.09 грн |
| 2000+ | 2.56 грн |
| MMBZ5244A_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5244A_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5244AW_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5244AW_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5244AS-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5244AS-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10.5 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5244A-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 10.5 V
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 10.5 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5244A-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 10.5 V
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 10.5 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PCDF0465G1_T0_00601 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SIL CARB 650V 4A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 4A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 1994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 264.16 грн |
| 50+ | 118.23 грн |
| 100+ | 112.51 грн |
| 500+ | 98.20 грн |
| 1000+ | 95.31 грн |
| RDXK210_T0_00601 |
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Виробник: Panjit International Inc.
Description: BRIDGE RECT 1PHASE 1KV 2A DXK
Packaging: Tube
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DXK
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2A DXK
Packaging: Tube
Package / Case: 4-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DXK
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 5561 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 63.47 грн |
| 35+ | 29.76 грн |
| 105+ | 24.37 грн |
| 525+ | 17.53 грн |
| 1015+ | 15.35 грн |
| 2030+ | 14.41 грн |
| 5005+ | 12.66 грн |
| BZX584C3-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 2.92 грн |
| BZX584C3-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.87 грн |
| 27+ | 12.39 грн |
| 100+ | 6.05 грн |
| 500+ | 4.73 грн |
| 1000+ | 3.29 грн |
| 2000+ | 2.85 грн |
| BZT52-B6V8S-AU_R1_000A1 |
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Виробник: Panjit International Inc.
Description: DIODE ZENER 6.8V 200MW SOD323
Tolerance: ±2.06%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 200MW SOD323
Tolerance: ±2.06%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
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| BZT52-B6V8S-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER 6.8V 200MW SOD323
Tolerance: ±2.06%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Description: DIODE ZENER 6.8V 200MW SOD323
Tolerance: ±2.06%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
на замовлення 5018 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.15 грн |
| 33+ | 10.16 грн |
| 100+ | 6.31 грн |
| 500+ | 4.32 грн |
| 1000+ | 3.80 грн |
| 2000+ | 3.37 грн |
| PCDF0665G1_T0_00601 |
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Виробник: Panjit International Inc.
Description: DIODE SIL CARB 650V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 232pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 232pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 331.05 грн |
| 50+ | 154.08 грн |
| 100+ | 145.62 грн |
| 500+ | 128.65 грн |
| 1.5SMC170A_R1_00001 |
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Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: SMC (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: SMC (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| 1.5SMC170A_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: SMC (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: SMC (DO-214AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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од. на суму грн.
| 1.5SMC170CA_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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В кошику
од. на суму грн.
| 1.5SMC170CA_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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В кошику
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| 1SMB3EZ33_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION SILICO
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SMB (DO-214AA)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
Description: GLASS PASSIVATED JUNCTION SILICO
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SMB (DO-214AA)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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В кошику
од. на суму грн.
| 1SMB3EZ33_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION SILICO
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SMB (DO-214AA)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
Description: GLASS PASSIVATED JUNCTION SILICO
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SMB (DO-214AA)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
товару немає в наявності
В кошику
од. на суму грн.
| 3EZ33_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-15
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-15
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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В кошику
од. на суму грн.
| 3EZ33_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-15
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-15
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 500 nA @ 25.1 V
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В кошику
од. на суму грн.
| PCDP1665GC_T0_00601 |
![]() |
Виробник: Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 446pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 446pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 535.17 грн |
| 50+ | 411.47 грн |
| 100+ | 368.15 грн |
| 500+ | 304.85 грн |
| 1000+ | 274.36 грн |
| 2000+ | 257.09 грн |
| PCDP1665GB_T0_00601 |
![]() |
Виробник: Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 995pF @ 1V, 100kHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 995pF @ 1V, 100kHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 16 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 638.95 грн |
| 50+ | 491.20 грн |
| 100+ | 439.50 грн |
| 500+ | 363.93 грн |
| 1000+ | 327.54 грн |
| 2000+ | 306.91 грн |
| PCDD0665G1_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SIL CARB 650V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 228pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 228pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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| PCDD0665G1_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SIL CARB 650V 6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 228pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Description: DIODE SIL CARB 650V 6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 228pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 2996 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.42 грн |
| 10+ | 177.98 грн |
| 100+ | 144.02 грн |
| 500+ | 120.14 грн |
| 1000+ | 102.87 грн |
| MMBZ5254B-AU_R1_000A1 |
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Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.23 грн |
| MMBZ5254B-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.87 грн |
| 26+ | 12.72 грн |
| 100+ | 6.19 грн |
| 500+ | 4.85 грн |
| 1000+ | 3.37 грн |
| MMBZ5254B_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5254B_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
на замовлення 2984 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 28.30 грн |
| 18+ | 18.83 грн |
| 100+ | 9.17 грн |
| 500+ | 7.18 грн |
| 1000+ | 4.99 грн |
| MMBZ5254BW_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5254BW_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5254BV_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5254BV_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5254BTW_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5254BTW_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOT-363
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5439E-AU_R2_006A1 |
![]() |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5439E-AU_R2_006A1 |
![]() |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 18.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.05 грн |
| 10+ | 49.31 грн |
| 100+ | 33.34 грн |
| 500+ | 24.67 грн |
| 1000+ | 22.45 грн |
| PJQ5437E-AU_R2_006A1 |
![]() |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5437E-AU_R2_006A1 |
![]() |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.47 грн |
| 10+ | 54.51 грн |
| 100+ | 36.05 грн |
| 500+ | 27.79 грн |
| 1000+ | 24.04 грн |
| PJQ5435E-AU_R2_006A1 |
![]() |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5435E-AU_R2_006A1 |
![]() |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.47 грн |
| 10+ | 58.14 грн |
| 100+ | 38.63 грн |
| 500+ | 28.62 грн |
| 1000+ | 25.82 грн |
| PJQ5433E-AU_R2_006A1 |
![]() |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5433E-AU_R2_006A1 |
![]() |
Виробник: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Qualification: AEC-Q101
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.21 грн |
| 10+ | 72.51 грн |
| 100+ | 48.40 грн |
| 500+ | 35.73 грн |
| 1000+ | 32.61 грн |
| PJQ5948V-AU_R2_002A1 |
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Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 32W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 32W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 38.91 грн |
| PJQ5948V-AU_R2_002A1 |
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Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 32W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 32W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.34 грн |
| 10+ | 74.16 грн |
| 100+ | 57.64 грн |
| 500+ | 45.85 грн |
| 1000+ | 37.35 грн |
| PJQ5839E-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 30V DUAL P-CHANNEL ENHANCEMENT M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
Description: 30V DUAL P-CHANNEL ENHANCEMENT M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5839E-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 30V DUAL P-CHANNEL ENHANCEMENT M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
Description: 30V DUAL P-CHANNEL ENHANCEMENT M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 174.96 грн |
| 10+ | 107.86 грн |
| 100+ | 73.30 грн |
| 500+ | 54.86 грн |
| 1000+ | 50.37 грн |
| 3.0SMCJ18A_R1_00001 |
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Виробник: Panjit International Inc.
Description: TVS DIODE 18VWM 29.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 18VWM 29.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 33.50 грн |




















