Продукція > PANJIT INTERNATIONAL INC. > Всі товари виробника PANJIT INTERNATIONAL INC. (11552) > Сторінка 166 з 193
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SX34-AU_R1_000A1 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 3A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 160pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 1770 шт: термін постачання 21-31 дні (днів) |
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MMBZ5256AW_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 49 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 23 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMBZ5256AW_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 49 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 23 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMBZ5256A_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 49 Ohms Supplier Device Package: SOT-23 Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 23 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MMBZ5256A_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Cut Tape (CT) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 49 Ohms Supplier Device Package: SOT-23 Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 23 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84B2V4-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Tape & Reel (TR) Tolerance: ±2.08% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOT-23 Grade: Automotive Power - Max: 410 mW Current - Reverse Leakage @ Vr: 50 µA @ 1 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84B2V4-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Cut Tape (CT) Tolerance: ±2.08% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOT-23 Grade: Automotive Power - Max: 410 mW Current - Reverse Leakage @ Vr: 50 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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BZX84B2V4_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Tape & Reel (TR) Tolerance: ±2.08% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOT-23 Power - Max: 410 mW Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84B2V4_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Cut Tape (CT) Tolerance: ±2.08% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOT-23 Power - Max: 410 mW Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
на замовлення 2815 шт: термін постачання 21-31 дні (днів) |
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BZX84B2V4W_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Tape & Reel (TR) Tolerance: ±2.08% Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84B2V4W_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Cut Tape (CT) Tolerance: ±2.08% Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 50 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1SMC5342_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: DO-214AB (SMC) Power - Max: 5 W Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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1SMC5342_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: DO-214AB (SMC) Power - Max: 5 W Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V |
на замовлення 1145 шт: термін постачання 21-31 дні (днів) |
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1SMC5342-AU_R1_000A1 | Panjit International Inc. |
Description: SILICON ZENER DIODEPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: DO-214AB (SMC) Grade: Automotive Power - Max: 5 W Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1SMC5342-AU_R1_000A1 | Panjit International Inc. |
Description: SILICON ZENER DIODEPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: DO-214AB (SMC) Grade: Automotive Power - Max: 5 W Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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GBU1506ULV_T0_00601 | Panjit International Inc. |
Description: BRIDGE RECT 1P 600V 15A GBU-2Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU-2 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 3867 шт: термін постачання 21-31 дні (днів) |
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PJQ5448-AU_R2_000A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PJQ5448-AU_R2_000A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 8996 шт: термін постачання 21-31 дні (днів) |
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PJQ4548VP-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PJQ4548VP-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PJQ5548-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ5548-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2775 шт: термін постачання 21-31 дні (днів) |
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PJQ4546P-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PJQ4546P-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PJQ5548V-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJQ5548V-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
| PJQ5542-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| PJQ5542-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| PJQ5540-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc) Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060X-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJQ5540-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc) Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060X-8L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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PJQ4444P_R2_00001 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PJQ4444P_R2_00001 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PJQ4546VP-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ4546VP-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2590 шт: термін постачання 21-31 дні (днів) |
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PJQ5546-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ5546-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2170 шт: термін постачання 21-31 дні (днів) |
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PJQ5546V-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ5546V-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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PJQ5544-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ5544-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2240 шт: термін постачання 21-31 дні (днів) |
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PJQ5544V-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJQ5544V-AU_R2_002A1 | Panjit International Inc. |
Description: 40V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 3.3W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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5KP85A_R2_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION TRANSIPackaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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5KP85A_R2_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION TRANSIPackaging: Cut Tape (CT) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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5KP85CA_R2_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION TRANSIPackaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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5KP85CA_R2_00001 | Panjit International Inc. |
Description: GLASS PASSIVATED JUNCTION TRANSIPackaging: Cut Tape (CT) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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5KP90A_R2_00001 | Panjit International Inc. |
Description: TVS DIODE 90VWM 146VC P600Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 34A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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5KP90A_R2_00001 | Panjit International Inc. |
Description: TVS DIODE 90VWM 146VC P600Packaging: Cut Tape (CT) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 34A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: P600 Unidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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5KP90CA_R2_00001 | Panjit International Inc. |
Description: TVS DIODE 90VWM 146VC P600Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 34A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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5KP90CA_R2_00001 | Panjit International Inc. |
Description: TVS DIODE 90VWM 146VC P600Packaging: Cut Tape (CT) Package / Case: P600, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 34A Voltage - Reverse Standoff (Typ): 90V Supplier Device Package: P600 Bidirectional Channels: 1 Voltage - Breakdown (Min): 100V Voltage - Clamping (Max) @ Ipp: 146V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PM810_R2_00601 | Panjit International Inc. |
Description: M8 PACKAGE, 8A/1000V LOW VF BRIDPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: M8 Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PM810_R2_00601 | Panjit International Inc. |
Description: M8 PACKAGE, 8A/1000V LOW VF BRIDPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: M8 Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 1996 шт: термін постачання 21-31 дні (днів) |
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GBJ2506ULV_T0_00601 | Panjit International Inc. |
Description: BRIDGE RECT 1P 600V 25A GBJ-2Packaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ-2 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
на замовлення 3528 шт: термін постачання 21-31 дні (днів) |
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BZT52-C27_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-123 Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZT52-C27_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-123 Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 20 V |
на замовлення 2075 шт: термін постачання 21-31 дні (днів) |
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BZT52-C27-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZT52-C27-AU_R1_000A1 | Panjit International Inc. |
Description: SURFACE MOUNT SILICON ZENER DIODPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 410 mW Current - Reverse Leakage @ Vr: 100 nA @ 20 V Qualification: AEC-Q101 |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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ER108_R2_00001 | Panjit International Inc. |
Description: SUPERFAST RECOVERY RECTIFIERSPackaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
ER108_R2_00001 | Panjit International Inc. |
Description: SUPERFAST RECOVERY RECTIFIERSPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJD60P04E-AU_L2_006A1 | Panjit International Inc. |
Description: 40V P-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| SX34-AU_R1_000A1 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 3A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
на замовлення 1770 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 32.22 грн |
| 14+ | 23.94 грн |
| 100+ | 13.95 грн |
| 500+ | 9.80 грн |
| MMBZ5256AW_R1_00001 |
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Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5256AW_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
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В кошику
од. на суму грн.
| MMBZ5256A_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
товару немає в наявності
В кошику
од. на суму грн.
| MMBZ5256A_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
товару немає в наявності
В кошику
од. на суму грн.
| BZX84B2V4-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BZX84B2V4-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.09 грн |
| 54+ | 5.97 грн |
| 100+ | 4.04 грн |
| 500+ | 2.87 грн |
| 1000+ | 2.56 грн |
| BZX84B2V4_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| BZX84B2V4_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2.08%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
на замовлення 2815 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.87 грн |
| 34+ | 9.63 грн |
| 100+ | 6.44 грн |
| 500+ | 4.61 грн |
| 1000+ | 4.13 грн |
| BZX84B2V4W_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±2.08%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| BZX84B2V4W_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2.08%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±2.08%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 1SMC5342_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 18.24 грн |
| 1SMC5342_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
на замовлення 1145 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 63.61 грн |
| 10+ | 38.02 грн |
| 100+ | 24.66 грн |
| 1SMC5342-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Grade: Automotive
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Qualification: AEC-Q101
Description: SILICON ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Grade: Automotive
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| 1SMC5342-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Grade: Automotive
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Qualification: AEC-Q101
Description: SILICON ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: DO-214AB (SMC)
Grade: Automotive
Power - Max: 5 W
Current - Reverse Leakage @ Vr: 10 µA @ 5.2 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| GBU1506ULV_T0_00601 |
![]() |
Виробник: Panjit International Inc.
Description: BRIDGE RECT 1P 600V 15A GBU-2
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU-2
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: BRIDGE RECT 1P 600V 15A GBU-2
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU-2
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 3867 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 405.61 грн |
| 20+ | 232.92 грн |
| 100+ | 185.80 грн |
| 500+ | 144.76 грн |
| 1000+ | 136.94 грн |
| PJQ5448-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.23 грн |
| 6000+ | 14.36 грн |
| PJQ5448-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Qualification: AEC-Q101
на замовлення 8996 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 67.74 грн |
| 10+ | 40.57 грн |
| 100+ | 26.28 грн |
| 500+ | 18.90 грн |
| 1000+ | 17.04 грн |
| PJQ4548VP-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 21.01 грн |
| PJQ4548VP-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.65 грн |
| PJQ5548-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5548-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2775 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.57 грн |
| 10+ | 55.45 грн |
| 100+ | 37.52 грн |
| 500+ | 28.77 грн |
| 1000+ | 26.13 грн |
| PJQ4546P-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 25.67 грн |
| PJQ4546P-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.26 грн |
| 10+ | 51.39 грн |
| 100+ | 39.92 грн |
| 500+ | 31.76 грн |
| 1000+ | 25.87 грн |
| 2000+ | 24.35 грн |
| PJQ5548V-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 22.64 грн |
| PJQ5548V-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PJQ5542-AU_R2_002A1 |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 54.84 грн |
| PJQ5542-AU_R2_002A1 |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.44 грн |
| PJQ5540-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5540-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 167.70 грн |
| 10+ | 147.88 грн |
| 100+ | 135.27 грн |
| 500+ | 103.60 грн |
| 1000+ | 95.35 грн |
| PJQ4444P_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 17.26 грн |
| PJQ4444P_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.35 грн |
| 10+ | 44.63 грн |
| 100+ | 29.16 грн |
| 500+ | 21.13 грн |
| 1000+ | 19.12 грн |
| 2000+ | 17.43 грн |
| PJQ4546VP-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ4546VP-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2590 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.39 грн |
| 10+ | 54.57 грн |
| 100+ | 42.48 грн |
| 500+ | 33.79 грн |
| 1000+ | 27.53 грн |
| 2000+ | 25.91 грн |
| PJQ5546-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5546-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2170 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 96.65 грн |
| 10+ | 63.16 грн |
| 100+ | 44.02 грн |
| 500+ | 34.73 грн |
| 1000+ | 31.68 грн |
| PJQ5546V-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5546V-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.78 грн |
| 10+ | 64.91 грн |
| 100+ | 45.26 грн |
| 500+ | 35.71 грн |
| 1000+ | 32.65 грн |
| PJQ5544-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5544-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2240 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.78 грн |
| 10+ | 90.45 грн |
| 100+ | 63.97 грн |
| 500+ | 50.86 грн |
| 1000+ | 46.75 грн |
| PJQ5544V-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5544V-AU_R2_002A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Qualification: AEC-Q101
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.74 грн |
| 10+ | 93.55 грн |
| 100+ | 66.22 грн |
| 500+ | 52.72 грн |
| 1000+ | 48.45 грн |
| 5KP85A_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| 5KP85A_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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| 5KP85CA_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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| 5KP85CA_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: GLASS PASSIVATED JUNCTION TRANSI
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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| 5KP90A_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: TVS DIODE 90VWM 146VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 90VWM 146VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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| 5KP90A_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: TVS DIODE 90VWM 146VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 90VWM 146VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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| 5KP90CA_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: TVS DIODE 90VWM 146VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 90VWM 146VC P600
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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| 5KP90CA_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: TVS DIODE 90VWM 146VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 90VWM 146VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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| PM810_R2_00601 |
![]() |
Виробник: Panjit International Inc.
Description: M8 PACKAGE, 8A/1000V LOW VF BRID
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: M8 PACKAGE, 8A/1000V LOW VF BRID
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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| PM810_R2_00601 |
![]() |
Виробник: Panjit International Inc.
Description: M8 PACKAGE, 8A/1000V LOW VF BRID
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: M8 PACKAGE, 8A/1000V LOW VF BRID
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M8
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1996 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.91 грн |
| 10+ | 55.53 грн |
| 100+ | 38.45 грн |
| 500+ | 30.15 грн |
| 1000+ | 25.66 грн |
| GBJ2506ULV_T0_00601 |
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Виробник: Panjit International Inc.
Description: BRIDGE RECT 1P 600V 25A GBJ-2
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ-2
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: BRIDGE RECT 1P 600V 25A GBJ-2
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ-2
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
на замовлення 3528 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 491.52 грн |
| 15+ | 285.79 грн |
| 105+ | 231.04 грн |
| 510+ | 182.89 грн |
| 1005+ | 181.82 грн |
| BZT52-C27_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
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| BZT52-C27_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
на замовлення 2075 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.74 грн |
| 51+ | 6.28 грн |
| 100+ | 3.84 грн |
| 500+ | 2.61 грн |
| 1000+ | 2.29 грн |
| BZT52-C27-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Qualification: AEC-Q101
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| BZT52-C27-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Qualification: AEC-Q101
Description: SURFACE MOUNT SILICON ZENER DIOD
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
Qualification: AEC-Q101
на замовлення 10 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ER108_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: SUPERFAST RECOVERY RECTIFIERS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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| ER108_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SUPERFAST RECOVERY RECTIFIERS
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: SUPERFAST RECOVERY RECTIFIERS
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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| PJD60P04E-AU_L2_006A1 |
![]() |
Виробник: Panjit International Inc.
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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