Продукція > PANJIT INTERNATIONAL INC. > Всі товари виробника PANJIT INTERNATIONAL INC. (11552) > Сторінка 63 з 193
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| PJQ5494_R2_00001 | Panjit International Inc. | Description: 150V N-CHANNEL ENHANCEMENT MODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PJD30N15_L2_00001 | Panjit International Inc. |
Description: 150V N-CHANNEL ENHANCEMENT MODEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 102W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJD30N15_L2_00001 | Panjit International Inc. |
Description: 150V N-CHANNEL ENHANCEMENT MODEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 102W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V |
на замовлення 2966 шт: термін постачання 21-31 дні (днів) |
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PJD40N15_L2_00001 | Panjit International Inc. |
Description: 150V N-CHANNEL ENHANCEMENT MODEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 131W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJD40N15_L2_00001 | Panjit International Inc. |
Description: 150V N-CHANNEL ENHANCEMENT MODEPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 131W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PJQ2800_R1_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJQ2800_R1_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJX138K-AU_R1_000A1 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJX138K-AU_R1_000A1 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PJT7802_S1_00001 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJT7802_S1_00001 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJX8808_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.5A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJX8808_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.5A SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
на замовлення 3384 шт: термін постачання 21-31 дні (днів) |
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| PJW7N04-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJW7N04-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PJT138K_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 50V 0.36A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 236mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJT138K_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 50V 0.36A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 236mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-363 |
на замовлення 9484 шт: термін постачання 21-31 дні (днів) |
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PJA3416-AU_R1_000A1 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJA3416-AU_R1_000A1 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 1970 шт: термін постачання 21-31 дні (днів) |
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PJS6834_S2_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.75A SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJT7838_R1_00001 | Panjit International Inc. |
Description: 50V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PJT7838_R1_00001 | Panjit International Inc. |
Description: 50V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 7895 шт: термін постачання 21-31 дні (днів) |
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PJW7N06A-AU_R2_000A1 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJW7N06A-AU_R2_000A1 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE M |
на замовлення 1075 шт: термін постачання 21-31 дні (днів) |
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PJT7800_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 1A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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PJT7800_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 1A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
на замовлення 16525 шт: термін постачання 21-31 дні (днів) |
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PJX8802_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.7A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJX8802_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.7A SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
на замовлення 2669 шт: термін постачання 21-31 дні (днів) |
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PJX8806_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.8A SOT563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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PJX8806_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.8A SOT563Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
на замовлення 9145 шт: термін постачання 21-31 дні (днів) |
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PJT7802_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.5A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJT7802_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.5A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Not For New Designs |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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PJS6806_S1_00001 | Panjit International Inc. |
Description: 30V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJS6806_S1_00001 | Panjit International Inc. |
Description: 30V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-6 |
на замовлення 2661 шт: термін постачання 21-31 дні (днів) |
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| PJL9410_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJL9410_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PJS6816_S1_00001 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJS6816_S1_00001 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-6 |
на замовлення 4494 шт: термін постачання 21-31 дні (днів) |
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| PJX138K_R1_00001 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJX138K_R1_00001 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJT138K-AU_R1_000A1 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJT138K-AU_R1_000A1 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PJT7812_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 30V 0.5A SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-363 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJT7812_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 30V 0.5A SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-363 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BAT721AC_R1_00001 | Panjit International Inc. |
Description: DIODE ARR SCHOTT 40V 400MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 400mA Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 400 mA Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BAT721AC_R1_00001 | Panjit International Inc. |
Description: DIODE ARR SCHOTT 40V 400MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 400mA Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 400 mA Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR5100_R2_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 100V 5A DO201ADPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 150pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR5100_R2_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 100V 5A DO201ADPackaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 150pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SK55_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SCHOTTKY BARRIER RPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SK55_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT SCHOTTKY BARRIER RPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84C8V2W-AU_R1_000A1 | Panjit International Inc. |
Description: DIODE ZENER 8.2V 200MW SOT323Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 700 nA @ 5 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84C8V2TW_R1_00001 | Panjit International Inc. |
Description: DIODE ZENER ARRAY 8.2V SOT-363Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 3 Independent Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-363 Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 700 nA @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84C8V2W_R1_00001 | Panjit International Inc. |
Description: DIODE ZENER 8.2V 200MW SOT323Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-323 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 700 nA @ 5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84C8V2_R1_00001 | Panjit International Inc. |
Description: DIODE ZENER 8.2V 410MW SOT23Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 410 mW Current - Reverse Leakage @ Vr: 700 nA @ 5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C8V2_R1_00001 | Panjit International Inc. |
Description: DIODE ZENER 8.2V 410MW SOT23Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 410 mW Current - Reverse Leakage @ Vr: 700 nA @ 5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C8V2-AU_R1_000A1 | Panjit International Inc. |
Description: DIODE ZENER 8.2V 410MW SOT23Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 410 mW Current - Reverse Leakage @ Vr: 700 nA @ 5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C8V2-AU_R1_000A1 | Panjit International Inc. |
Description: DIODE ZENER 8.2V 410MW SOT23Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOT-23 Part Status: Active Power - Max: 410 mW Current - Reverse Leakage @ Vr: 700 nA @ 5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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P4SMAJ30C_R1_00001 | Panjit International Inc. | Description: SURFACE MOUNT TRANSIENT VOLTAGE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
P4SMAJ30C_R1_00001 | Panjit International Inc. | Description: SURFACE MOUNT TRANSIENT VOLTAGE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
P4SMAJ30_R1_00001 | Panjit International Inc. |
Description: SURFACE MOUNT TRANSIENT VOLTAGE |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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| PJQ5494_R2_00001 |
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Description: 150V N-CHANNEL ENHANCEMENT MODE
товару немає в наявності
В кошику
од. на суму грн.
| PJD30N15_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| PJD30N15_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
на замовлення 2966 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.48 грн |
| 10+ | 63.24 грн |
| 100+ | 44.13 грн |
| 500+ | 33.36 грн |
| 1000+ | 30.72 грн |
| PJD40N15_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
| PJD40N15_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
| PJQ2800_R1_00001 |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Description: 20V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJQ2800_R1_00001 |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Description: 20V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJX138K-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Description: 50V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJX138K-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Description: 50V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJT7802_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
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В кошику
од. на суму грн.
| PJT7802_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
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В кошику
од. на суму грн.
| PJX8808_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2N-CH 20V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PJX8808_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2N-CH 20V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
на замовлення 3384 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.13 грн |
| 13+ | 25.38 грн |
| 100+ | 16.18 грн |
| 500+ | 11.42 грн |
| 1000+ | 10.21 грн |
| 2000+ | 9.19 грн |
| PJW7N04-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Description: 40V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJW7N04-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Description: 40V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJT138K_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 236mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 236mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.74 грн |
| PJT138K_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 236mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET 2N-CH 50V 0.36A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 236mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
на замовлення 9484 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.57 грн |
| 41+ | 7.88 грн |
| 100+ | 4.06 грн |
| PJA3416-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Qualification: AEC-Q101
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJA3416-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Qualification: AEC-Q101
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.17 грн |
| 13+ | 25.46 грн |
| 100+ | 12.85 грн |
| 500+ | 9.83 грн |
| 1000+ | 7.29 грн |
| PJS6834_S2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.75A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-6
Description: MOSFET 2N-CH 20V 0.75A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-6
товару немає в наявності
В кошику
од. на суму грн.
| PJT7838_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.27 грн |
| PJT7838_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 7895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.13 грн |
| 11+ | 30.23 грн |
| 100+ | 18.85 грн |
| 500+ | 12.11 грн |
| 1000+ | 9.31 грн |
| PJW7N06A-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Description: 60V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJW7N06A-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Description: 60V N-CHANNEL ENHANCEMENT MODE M
на замовлення 1075 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.78 грн |
| 10+ | 53.22 грн |
| 100+ | 40.82 грн |
| 500+ | 30.29 грн |
| 1000+ | 24.23 грн |
| PJT7800_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.41 грн |
| 6000+ | 7.92 грн |
| 9000+ | 7.02 грн |
| PJT7800_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2N-CH 20V 1A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
на замовлення 16525 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.00 грн |
| 13+ | 26.01 грн |
| 100+ | 13.13 грн |
| 500+ | 10.92 грн |
| 1000+ | 8.50 грн |
| PJX8802_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
товару немає в наявності
В кошику
од. на суму грн.
| PJX8802_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 2669 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.13 грн |
| 13+ | 25.38 грн |
| 100+ | 16.18 грн |
| 500+ | 11.42 грн |
| 1000+ | 10.21 грн |
| 2000+ | 9.19 грн |
| PJX8806_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 9.22 грн |
| 8000+ | 8.10 грн |
| PJX8806_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 9145 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.13 грн |
| 13+ | 25.38 грн |
| 100+ | 16.18 грн |
| 500+ | 11.42 грн |
| 1000+ | 10.21 грн |
| 2000+ | 9.19 грн |
| PJT7802_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Description: MOSFET 2N-CH 20V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| PJT7802_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Description: MOSFET 2N-CH 20V 0.5A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.00 грн |
| 13+ | 26.01 грн |
| 100+ | 13.10 грн |
| 500+ | 10.90 грн |
| 1000+ | 8.48 грн |
| PJS6806_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
товару немає в наявності
В кошику
од. на суму грн.
| PJS6806_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-6
на замовлення 2661 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.65 грн |
| 11+ | 29.12 грн |
| 100+ | 17.48 грн |
| 500+ | 15.19 грн |
| 1000+ | 10.33 грн |
| PJL9410_R2_00001 |
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Description: 30V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJL9410_R2_00001 |
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Description: 30V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJS6816_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
товару немає в наявності
В кошику
од. на суму грн.
| PJS6816_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-6
на замовлення 4494 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.39 грн |
| 13+ | 26.01 грн |
| 100+ | 18.05 грн |
| 500+ | 13.23 грн |
| 1000+ | 10.75 грн |
| PJX138K_R1_00001 |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Description: 50V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJX138K_R1_00001 |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Description: 50V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJT138K-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Description: 50V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJT138K-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Description: 50V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJT7812_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Description: MOSFET 2N-CH 30V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| PJT7812_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 30V 0.5A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
Description: MOSFET 2N-CH 30V 0.5A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Not For New Designs
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| BAT721AC_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 40V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 400 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 400 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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| BAT721AC_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ARR SCHOTT 40V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 400 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE ARR SCHOTT 40V 400MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 400 mA
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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| MBR5100_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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| MBR5100_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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| SK55_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SCHOTTKY BARRIER R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: SURFACE MOUNT SCHOTTKY BARRIER R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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| SK55_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT SCHOTTKY BARRIER R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: SURFACE MOUNT SCHOTTKY BARRIER R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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| BZX84C8V2W-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER 8.2V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
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| BZX84C8V2TW_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER ARRAY 8.2V SOT-363
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-363
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Description: DIODE ZENER ARRAY 8.2V SOT-363
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 3 Independent
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-363
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
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| BZX84C8V2W_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER 8.2V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Description: DIODE ZENER 8.2V 200MW SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
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| BZX84C8V2_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER 8.2V 410MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Description: DIODE ZENER 8.2V 410MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.27 грн |
| BZX84C8V2_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER 8.2V 410MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Description: DIODE ZENER 8.2V 410MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.57 грн |
| BZX84C8V2-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER 8.2V 410MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 410MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.52 грн |
| BZX84C8V2-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE ZENER 8.2V 410MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 8.2V 410MW SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.39 грн |
| 43+ | 7.48 грн |
| 100+ | 4.61 грн |
| 500+ | 3.15 грн |
| 1000+ | 2.77 грн |
| P4SMAJ30C_R1_00001 |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Description: SURFACE MOUNT TRANSIENT VOLTAGE
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| P4SMAJ30C_R1_00001 |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Description: SURFACE MOUNT TRANSIENT VOLTAGE
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| P4SMAJ30_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: SURFACE MOUNT TRANSIENT VOLTAGE
Description: SURFACE MOUNT TRANSIENT VOLTAGE
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1800+ | 7.67 грн |














