Продукція > PANJIT INTERNATIONAL INC. > Всі товари виробника PANJIT INTERNATIONAL INC. (11463) > Сторінка 61 з 192
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SR24-AU_R1_000A1 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 2A DO214ACQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 200 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 98pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 3563 шт: термін постачання 21-31 дні (днів) |
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SR24_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 2A DO214ACCurrent - Reverse Leakage @ Vr: 200 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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SR24_R1_00001 | Panjit International Inc. |
Description: DIODE SCHOTTKY 40V 2A DO214ACCurrent - Reverse Leakage @ Vr: 200 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 7030 шт: термін постачання 21-31 дні (днів) |
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BZT52-B4V7_R1_00001 | Panjit International Inc. |
Description: SOD-123, ZENERVoltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 410 mW Part Status: Active Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 78 Ohms Voltage - Zener (Nom) (Vz): 4.7 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±1.91% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BZT52-B4V7_R1_00001 | Panjit International Inc. |
Description: SOD-123, ZENERCurrent - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 410 mW Part Status: Active Supplier Device Package: SOD-123 Impedance (Max) (Zzt): 78 Ohms Voltage - Zener (Nom) (Vz): 4.7 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±1.91% Packaging: Cut Tape (CT) |
на замовлення 8606 шт: термін постачання 21-31 дні (днів) |
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SM8S36A-AU_R2_000A1 | Panjit International Inc. |
Description: TVS DIODE 36VWM 58.1VC DO218ABQualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: No Power - Peak Pulse: 6600W (6.6kW) Voltage - Clamping (Max) @ Ipp: 58.1V Voltage - Breakdown (Min): 40V Unidirectional Channels: 1 Supplier Device Package: DO-218AB Voltage - Reverse Standoff (Typ): 36V Current - Peak Pulse (10/1000µs): 114A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-218AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||
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SM8S36A-AU_R2_000A1 | Panjit International Inc. |
Description: TVS DIODE 36VWM 58.1VC DO218ABQualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: No Power - Peak Pulse: 6600W (6.6kW) Voltage - Clamping (Max) @ Ipp: 58.1V Voltage - Breakdown (Min): 40V Unidirectional Channels: 1 Supplier Device Package: DO-218AB Voltage - Reverse Standoff (Typ): 36V Current - Peak Pulse (10/1000µs): 114A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-218AB Packaging: Cut Tape (CT) |
на замовлення 320 шт: термін постачання 21-31 дні (днів) |
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PEC1305S1Q_R1_00001 | Panjit International Inc. |
Description: ULTRA LOW CAPACITANCE ESD PROTECPower Line Protection: No Voltage - Clamping (Max) @ Ipp: 19V (Typ) Voltage - Breakdown (Min): 6V Bidirectional Channels: 1 Supplier Device Package: DFN0603-2 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 0.25pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8740000 шт В кошику од. на суму грн. | ||||||||||||
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PEC1305S1Q_R1_00001 | Panjit International Inc. |
Description: ULTRA LOW CAPACITANCE ESD PROTECPower Line Protection: No Voltage - Clamping (Max) @ Ipp: 19V (Typ) Voltage - Breakdown (Min): 6V Bidirectional Channels: 1 Supplier Device Package: DFN0603-2 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 0.25pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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P6SMB200AS_R1_00001 | Panjit International Inc. |
Description: TVS DIODE 171VWM 274VC DO214AAPart Status: Active Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 274V Voltage - Breakdown (Min): 190V Unidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 171V Current - Peak Pulse (10/1000µs): 2.2A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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P6SMB200AS_R1_00001 | Panjit International Inc. |
Description: TVS DIODE 171VWM 274VC DO214AAPart Status: Active Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 274V Voltage - Breakdown (Min): 190V Unidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 171V Current - Peak Pulse (10/1000µs): 2.2A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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ES1A_R1_00001 | Panjit International Inc. |
Description: DIODE STANDARD 50V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 50 V |
на замовлення 1577 шт: термін постачання 21-31 дні (днів) |
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PBHV9110DA-AU_R1_000A1 | Panjit International Inc. |
Description: TRANS PNP 100V 1A SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.25 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PBHV9110DA-AU_R1_000A1 | Panjit International Inc. |
Description: TRANS PNP 100V 1A SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.25 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1192 шт: термін постачання 21-31 дні (днів) |
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2SD1781A_R1_00001 | Panjit International Inc. |
Description: TRANS NPN 50V 3A SOT-23Power - Max: 1.25 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: SOT-23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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2SD1781A_R1_00001 | Panjit International Inc. |
Description: TRANS NPN 50V 3A SOT-23Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 1.25 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: SOT-23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN |
на замовлення 26091 шт: термін постачання 21-31 дні (днів) |
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PJL9480_R2_00001 | Panjit International Inc. |
Description: 150V N-CHANNEL ENHANCEMENT MODEPart Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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PJL9480_R2_00001 | Panjit International Inc. |
Description: 150V N-CHANNEL ENHANCEMENT MODERds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta) |
на замовлення 2170 шт: термін постачання 21-31 дні (днів) |
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| PJQ5494_R2_00001 | Panjit International Inc. | Description: 150V N-CHANNEL ENHANCEMENT MODE |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PJQ5494_R2_00001 | Panjit International Inc. | Description: 150V N-CHANNEL ENHANCEMENT MODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PJD30N15_L2_00001 | Panjit International Inc. |
Description: 150V N-CHANNEL ENHANCEMENT MODEInput Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta), 102W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PJD30N15_L2_00001 | Panjit International Inc. |
Description: 150V N-CHANNEL ENHANCEMENT MODECurrent - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta), 102W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V |
на замовлення 2966 шт: термін постачання 21-31 дні (днів) |
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PJD40N15_L2_00001 | Panjit International Inc. |
Description: 150V N-CHANNEL ENHANCEMENT MODEPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 2W (Ta), 131W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
| PJQ2800_R1_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PJQ2800_R1_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJX138K-AU_R1_000A1 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| PJX138K-AU_R1_000A1 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PJT7802_S1_00001 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE MPart Status: Not For New Designs Supplier Device Package: SOT-363 Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PJT7802_S1_00001 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE MPart Status: Not For New Designs Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJX8808_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.5A SOT563Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate, 1.2V Drive Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 300mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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PJX8808_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.5A SOT563Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate, 1.2V Drive Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 300mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SOT-563 |
на замовлення 3384 шт: термін постачання 21-31 дні (днів) |
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| PJW7N04-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| PJW7N04-AU_R2_000A1 | Panjit International Inc. | Description: 40V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PJT138K_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 50V 0.36A SOT363Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drain to Source Voltage (Vdss): 50V Power - Max: 236mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PJT138K_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 50V 0.36A SOT363Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drain to Source Voltage (Vdss): 50V Power - Max: 236mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 9484 шт: термін постачання 21-31 дні (днів) |
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PJA3416-AU_R1_000A1 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE MQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Grade: Automotive Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PJA3416-AU_R1_000A1 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE MQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Grade: Automotive Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 1970 шт: термін постачання 21-31 дні (днів) |
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PJS6834_S2_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.75A SOT23-6Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 500mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
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PJT7838_R1_00001 | Panjit International Inc. |
Description: 50V N-CHANNEL ENHANCEMENT MODE MPower - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drain to Source Voltage (Vdss): 50V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PJT7838_R1_00001 | Panjit International Inc. |
Description: 50V N-CHANNEL ENHANCEMENT MODE MRds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drain to Source Voltage (Vdss): 50V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V |
на замовлення 7895 шт: термін постачання 21-31 дні (днів) |
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PJW7N06A-AU_R2_000A1 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE MPackaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 3.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJW7N06A-AU_R2_000A1 | Panjit International Inc. |
Description: 60V N-CHANNEL ENHANCEMENT MODE MPackaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 3.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PJT7800_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 1A SOT363Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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PJT7800_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 1A SOT363Part Status: Active Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 16525 шт: термін постачання 21-31 дні (днів) |
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PJX8802_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.7A SOT563Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 300mW (Ta) Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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PJX8802_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.7A SOT563Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 300mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 2669 шт: термін постачання 21-31 дні (днів) |
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PJX8806_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.8A SOT563Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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PJX8806_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.8A SOT563Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 9145 шт: термін постачання 21-31 дні (днів) |
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PJT7802_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.5A SOT363Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Part Status: Not For New Designs Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PJT7802_R1_00001 | Panjit International Inc. |
Description: MOSFET 2N-CH 20V 0.5A SOT363Part Status: Not For New Designs Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 350mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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PJS6806_S1_00001 | Panjit International Inc. |
Description: 30V N-CHANNEL ENHANCEMENT MODE MSupplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.25W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PJS6806_S1_00001 | Panjit International Inc. |
Description: 30V N-CHANNEL ENHANCEMENT MODE MSupplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.25W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 2661 шт: термін постачання 21-31 дні (днів) |
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| PJL9410_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
| PJL9410_R2_00001 | Panjit International Inc. | Description: 30V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PJS6816_S1_00001 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE MSupplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.25W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PJS6816_S1_00001 | Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE MSupplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.25W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 4494 шт: термін постачання 21-31 дні (днів) |
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| PJX138K_R1_00001 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| PJX138K_R1_00001 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PJT138K-AU_R1_000A1 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PJT138K-AU_R1_000A1 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
товару немає в наявності |
В кошику од. на суму грн. |
| SR24-AU_R1_000A1 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 2A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 98pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 2A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 98pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 3563 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.13 грн |
| 11+ | 27.99 грн |
| 100+ | 17.93 грн |
| 500+ | 12.74 грн |
| SR24_R1_00001 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 2A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Description: DIODE SCHOTTKY 40V 2A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1800+ | 3.44 грн |
| 3600+ | 3.21 грн |
| SR24_R1_00001 |
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Виробник: Panjit International Inc.
Description: DIODE SCHOTTKY 40V 2A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 2A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 7030 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.50 грн |
| 28+ | 11.04 грн |
| 100+ | 7.98 грн |
| 500+ | 6.17 грн |
| BZT52-B4V7_R1_00001 |
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Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 78 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±1.91%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: SOD-123, ZENER
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 78 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±1.91%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.97 грн |
| 6000+ | 2.58 грн |
| BZT52-B4V7_R1_00001 |
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Виробник: Panjit International Inc.
Description: SOD-123, ZENER
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 78 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±1.91%
Packaging: Cut Tape (CT)
Description: SOD-123, ZENER
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 78 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±1.91%
Packaging: Cut Tape (CT)
на замовлення 8606 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.50 грн |
| 21+ | 14.75 грн |
| 100+ | 8.02 грн |
| 500+ | 4.63 грн |
| 1000+ | 3.16 грн |
| SM8S36A-AU_R2_000A1 |
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Виробник: Panjit International Inc.
Description: TVS DIODE 36VWM 58.1VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 114A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Description: TVS DIODE 36VWM 58.1VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 114A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| SM8S36A-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: TVS DIODE 36VWM 58.1VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 114A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Cut Tape (CT)
Description: TVS DIODE 36VWM 58.1VC DO218AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 58.1V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 114A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Cut Tape (CT)
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 277.30 грн |
| 10+ | 175.58 грн |
| 100+ | 123.64 грн |
| PEC1305S1Q_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: ULTRA LOW CAPACITANCE ESD PROTEC
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: DFN0603-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.25pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Description: ULTRA LOW CAPACITANCE ESD PROTEC
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: DFN0603-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.25pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8740000 шт
В кошику
од. на суму грн.
| PEC1305S1Q_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: ULTRA LOW CAPACITANCE ESD PROTEC
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: DFN0603-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.25pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
Description: ULTRA LOW CAPACITANCE ESD PROTEC
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 19V (Typ)
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: DFN0603-2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 0.25pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB200AS_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: TVS DIODE 171VWM 274VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: TVS DIODE 171VWM 274VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 11.23 грн |
| P6SMB200AS_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: TVS DIODE 171VWM 274VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: TVS DIODE 171VWM 274VC DO214AA
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 274V
Voltage - Breakdown (Min): 190V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 171V
Current - Peak Pulse (10/1000µs): 2.2A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 41.63 грн |
| ES1A_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
на замовлення 1577 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 20.42 грн |
| 26+ | 12.03 грн |
| 100+ | 7.51 грн |
| 500+ | 5.20 грн |
| PBHV9110DA-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PBHV9110DA-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: TRANS PNP 100V 1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 100V 1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1192 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.28 грн |
| 30+ | 10.29 грн |
| 100+ | 6.39 грн |
| 500+ | 4.41 грн |
| 1000+ | 3.89 грн |
| 2SD1781A_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: TRANS NPN 50V 3A SOT-23
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 50V 3A SOT-23
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 6.76 грн |
| 6000+ | 5.91 грн |
| 9000+ | 5.60 грн |
| 15000+ | 4.93 грн |
| 2SD1781A_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: TRANS NPN 50V 3A SOT-23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Description: TRANS NPN 50V 3A SOT-23
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 140mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
на замовлення 26091 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.42 грн |
| 17+ | 18.38 грн |
| 100+ | 11.59 грн |
| 500+ | 8.13 грн |
| 1000+ | 7.24 грн |
| PJL9480_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Description: 150V N-CHANNEL ENHANCEMENT MODE
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| PJL9480_R2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Description: 150V N-CHANNEL ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
на замовлення 2170 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 87.98 грн |
| 10+ | 57.26 грн |
| 100+ | 39.90 грн |
| 500+ | 30.13 грн |
| 1000+ | 27.73 грн |
| PJQ5494_R2_00001 |
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Description: 150V N-CHANNEL ENHANCEMENT MODE
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJQ5494_R2_00001 |
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Description: 150V N-CHANNEL ENHANCEMENT MODE
товару немає в наявності
В кошику
од. на суму грн.
| PJD30N15_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: 150V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJD30N15_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Description: 150V N-CHANNEL ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 102W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
на замовлення 2966 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 92.70 грн |
| 10+ | 60.14 грн |
| 100+ | 41.96 грн |
| 500+ | 31.72 грн |
| 1000+ | 29.21 грн |
| PJD40N15_L2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V
Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2207 pF @ 75 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJQ2800_R1_00001 |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Description: 20V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJQ2800_R1_00001 |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Description: 20V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJX138K-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Description: 50V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| PJX138K-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Description: 50V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJT7802_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJT7802_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PJX8808_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Description: MOSFET 2N-CH 20V 0.5A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| PJX8808_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT563
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 20V 0.5A SOT563
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate, 1.2V Drive
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-563
на замовлення 3384 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.06 грн |
| 13+ | 24.13 грн |
| 100+ | 15.39 грн |
| 500+ | 10.86 грн |
| 1000+ | 9.71 грн |
| 2000+ | 8.74 грн |
| PJW7N04-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Description: 40V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| PJW7N04-AU_R2_000A1 |
Виробник: Panjit International Inc.
Description: 40V N-CHANNEL ENHANCEMENT MODE M
Description: 40V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJT138K_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 236mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 50V 0.36A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 236mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.61 грн |
| PJT138K_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 50V 0.36A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 236mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 50V 0.36A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 236mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 9484 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.00 грн |
| 41+ | 7.49 грн |
| 100+ | 3.87 грн |
| PJA3416-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJA3416-AU_R1_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 35.35 грн |
| 13+ | 24.21 грн |
| 100+ | 12.22 грн |
| 500+ | 9.35 грн |
| 1000+ | 6.94 грн |
| PJS6834_S2_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.75A SOT23-6
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 0.75A SOT23-6
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PJT7838_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 8.82 грн |
| PJT7838_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 50V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
на замовлення 7895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.06 грн |
| 11+ | 28.75 грн |
| 100+ | 17.93 грн |
| 500+ | 11.51 грн |
| 1000+ | 8.86 грн |
| PJW7N06A-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJW7N06A-AU_R2_000A1 |
![]() |
Виробник: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| PJT7800_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 8.00 грн |
| 6000+ | 7.53 грн |
| 9000+ | 6.67 грн |
| PJT7800_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 1A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 16525 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.14 грн |
| 13+ | 24.74 грн |
| 100+ | 12.48 грн |
| 500+ | 10.38 грн |
| 1000+ | 8.08 грн |
| PJX8802_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Description: MOSFET 2N-CH 20V 0.7A SOT563
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| PJX8802_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.7A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 0.7A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 300mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 2669 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.06 грн |
| 13+ | 24.13 грн |
| 100+ | 15.39 грн |
| 500+ | 10.86 грн |
| 1000+ | 9.71 грн |
| 2000+ | 8.74 грн |
| PJX8806_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.8A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 0.8A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4000+ | 8.76 грн |
| 8000+ | 7.71 грн |
| PJX8806_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.8A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 0.8A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 9145 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.06 грн |
| 13+ | 24.13 грн |
| 100+ | 15.39 грн |
| 500+ | 10.86 грн |
| 1000+ | 9.71 грн |
| 2000+ | 8.74 грн |
| PJT7802_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT363
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: MOSFET 2N-CH 20V 0.5A SOT363
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJT7802_R1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.5A SOT363
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 0.5A SOT363
Part Status: Not For New Designs
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 350mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 36.14 грн |
| 13+ | 24.74 грн |
| 100+ | 12.46 грн |
| 500+ | 10.36 грн |
| 1000+ | 8.06 грн |
| PJS6806_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJS6806_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 2661 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 37.71 грн |
| 11+ | 27.69 грн |
| 100+ | 16.62 грн |
| 500+ | 14.44 грн |
| 1000+ | 9.82 грн |
| PJL9410_R2_00001 |
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Description: 30V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| PJL9410_R2_00001 |
Виробник: Panjit International Inc.
Description: 30V N-CHANNEL ENHANCEMENT MODE M
Description: 30V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJS6816_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJS6816_S1_00001 |
![]() |
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 4494 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 29.85 грн |
| 13+ | 24.74 грн |
| 100+ | 17.16 грн |
| 500+ | 12.58 грн |
| 1000+ | 10.22 грн |
| PJX138K_R1_00001 |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Description: 50V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| PJX138K_R1_00001 |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Description: 50V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.
| PJT138K-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Description: 50V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PJT138K-AU_R1_000A1 |
Виробник: Panjit International Inc.
Description: 50V N-CHANNEL ENHANCEMENT MODE M
Description: 50V N-CHANNEL ENHANCEMENT MODE M
товару немає в наявності
В кошику
од. на суму грн.


















