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BC850BW_R1_00001 BC850BW_R1_00001 PanJit BC846AW_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Power dissipation: 0.25W
Kind of package: reel; tape
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BC850C-AU_R1_000A1 BC850C-AU_R1_000A1 PanJit BC846X-AU_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC850C_R1_00001 BC850C_R1_00001 PanJit BC846X_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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MMDT3904_R1_00001 MMDT3904_R1_00001 PanJit MMDT3904.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.225W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
на замовлення 2340 шт:
термін постачання 14-30 дні (днів)
39+11.50 грн
60+6.90 грн
100+4.40 грн
500+3.25 грн
1000+2.83 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
1N4746A_R2_00001 1N4746A_R2_00001 PanJit 1N4728A_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; DO41; single diode; tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N47xxA
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P6SMBJ33CA-AU_R1_000A1 P6SMBJ33CA-AU_R1_000A1 PanJit Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
на замовлення 714 шт:
термін постачання 14-30 дні (днів)
15+30.97 грн
23+17.99 грн
95+9.94 грн
261+9.37 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
BAV199_R1_00001 BAV199_R1_00001 PanJit BAS116_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: double series x2
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Leakage current: 80nA
на замовлення 5376 шт:
термін постачання 14-30 дні (днів)
44+10.25 грн
80+5.15 грн
113+3.66 грн
500+2.71 грн
559+1.68 грн
1537+1.59 грн
Мінімальне замовлення: 44 шт
В кошику  од. на суму  грн.
BAV199W_R1_00001 BAV199W_R1_00001 PanJit BAV170W_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: double series x2
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Leakage current: 80nA
на замовлення 2334 шт:
термін постачання 14-30 дні (днів)
67+6.63 грн
103+4.02 грн
152+2.71 грн
500+2.12 грн
559+1.68 грн
1537+1.59 грн
Мінімальне замовлення: 67 шт
В кошику  од. на суму  грн.
BAV199S_R1_00001 BAV199S_R1_00001 PanJit BAS116TW_SERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 3us; SOT363; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Leakage current: 80nA
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P6KE6.8A_R2_00001 PanJit P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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P6SMBJ15CA-AU_R1_000A1 P6SMBJ15CA-AU_R1_000A1 PanJit Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
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 Мінімальне замовлення: 800 шт
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P6KE20CA_AY_00001 PanJit Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; 0.6kW; P6KE; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
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 Мінімальне замовлення: 3000 шт
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P6KE20CA_R2_00001 PanJit P6KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
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 Мінімальне замовлення: 4000 шт
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P6SMBJ33CA_R2_00001 P6SMBJ33CA_R2_00001 PanJit Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
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MMBTA06-AU_R1_000A1 MMBTA06-AU_R1_000A1 PanJit MMBTA05-AU_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MER2DAL_R1_00701 MER2DAL_R1_00701 PanJit MER2DAL.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD123F; Ufmax: 0.95V
Reverse recovery time: 35ns
Mounting: SMD
Max. forward impulse current: 60A
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40µA
Case: SOD123F
Type of diode: rectifying
на замовлення 4990 шт:
термін постачання 14-30 дні (днів)
34+13.27 грн
57+7.31 грн
65+6.39 грн
100+6.10 грн
500+5.69 грн
1000+5.38 грн
3000+4.72 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
BC856B_R1_00001 BC856B_R1_00001 PanJit BC856X_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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BC856BS-AU_R1_000A1 BC856BS-AU_R1_000A1 PanJit Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC856BS_R1_00001 BC856BS_R1_00001 PanJit BC856BS.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
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BC856BW-AU_R1_000A1 BC856BW-AU_R1_000A1 PanJit BC856XW-AU_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; SOT323; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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US1D_R1_00001 US1D_R1_00001 PanJit US1A_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
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BC849B-AU_R1_000A1 BC849B-AU_R1_000A1 PanJit BC846AW_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC849B_R1_00001 BC849B_R1_00001 PanJit BC846AW_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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BC849C_R1_00001 BC849C_R1_00001 PanJit BC846X_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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BC849CW_R1_00001 BC849CW_R1_00001 PanJit BC846AW_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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P4SMAJ22A-AU_R1_000A1 P4SMAJ22A-AU_R1_000A1 PanJit P4SMAJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P4SMAJ22A_R1_00001 P4SMAJ22A_R1_00001 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
BZX84C18W_R1_00001 BZX84C18W_R1_00001 PanJit BZX84C2V4W_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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P6KE12CA_R2_00001 PanJit P6KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 11.4÷12.6V; 36A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4...12.6V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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1.5KE27A_R2_00001 PanJit 1.5KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 1250 шт
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ER1602CT_T0_00001 ER1602CT_T0_00001 PanJit ER1600CT_SERIES.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; Ifsm: 125A; TO220AB; tube; 35ns
Mounting: THT
Max. forward impulse current: 125A
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 16A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 0.5mA
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
товару немає в наявності
 Мінімальне замовлення: 9000 шт
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P6SMBJ28A_R1_00001 P6SMBJ28A_R1_00001 PanJit P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 785 шт:
термін постачання 14-30 дні (днів)
21+22.03 грн
33+12.57 грн
100+9.20 грн
167+5.67 грн
458+5.34 грн
Мінімальне замовлення: 21 шт
В кошику  од. на суму  грн.
P6SMBJ28A-AU_R2_000A1 P6SMBJ28A-AU_R2_000A1 PanJit P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ30A-AU_R1_000A1 P6SMBJ30A-AU_R1_000A1 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
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GBJ3510_T0_00601 GBJ3510_T0_00601 PanJit GBJ3510.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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GBJ3510H_T0_00601 PanJit GBJ3510H Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
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2SD1781A_R1_00001 2SD1781A_R1_00001 PanJit 2SD1781A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 5A
Current gain: 300...900
на замовлення 3242 шт:
термін постачання 14-30 дні (днів)
16+29.20 грн
24+17.58 грн
100+11.01 грн
500+7.56 грн
1000+6.16 грн
3000+5.92 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
P6SMBJ36A-AU_R1_000A1 P6SMBJ36A-AU_R1_000A1 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMBJ36A_R1_00001 P6SMBJ36A_R1_00001 PanJit P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P4SMAJ33A-AU_R1_000A1 P4SMAJ33A-AU_R1_000A1 PanJit P4SMAJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P4SMAJ33A_R1_00001 P4SMAJ33A_R1_00001 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
BC848B-AU_R1_000A1 BC848B-AU_R1_000A1 PanJit BC846X-AU_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC848B_R1_00001 BC848B_R1_00001 PanJit BC846X_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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P6SMBJ10A-AU_R2_000A1 P6SMBJ10A-AU_R2_000A1 PanJit P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ10A_R1_00001 P6SMBJ10A_R1_00001 PanJit P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
1N4752A_R2_00001 1N4752A_R2_00001 PanJit 1N4728A_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 33V; DO41; single diode; tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: tape
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1SMA4746_R1_00001 1SMA4746_R1_00001 PanJit 1SMA4728_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
6+73.44 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
RS1010FL_R1_00001 RS1010FL_R1_00001 PanJit RS1001FL_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
на замовлення 55 шт:
термін постачання 14-30 дні (днів)
28+15.93 грн
45+9.28 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
BAS21_R1_00001 BAS21_R1_00001 PanJit Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 1µA
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2.5A
Max. forward voltage: 1V
Features of semiconductor devices: fast switching
Max. off-state voltage: 250V
Load current: 0.2A
на замовлення 2825 шт:
термін постачання 14-30 дні (днів)
50+8.85 грн
80+5.18 грн
119+3.46 грн
500+2.65 грн
640+1.47 грн
1757+1.39 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
P6KE39CA_AY_00001 PanJit Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 11.2A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P4SMAJ6.0CA_R1_00001 P4SMAJ6.0CA_R1_00001 PanJit Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
ES2D_R1_00001 ES2D_R1_00001 PanJit ES2A_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1420 шт:
термін постачання 14-30 дні (днів)
20+22.12 грн
31+13.47 грн
100+9.70 грн
140+6.74 грн
385+6.33 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
SBA0530Q-AU_R1_000A1 SBA0530Q-AU_R1_000A1 PanJit SBA0520Q-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; DFN2L; SMD; 30V; 0.5A; reel,tape
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 0.52V
Max. off-state voltage: 30V
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 3.5mA
Case: DFN2L
Type of diode: Schottky switching
на замовлення 31000 шт:
термін постачання 14-30 дні (днів)
24+18.58 грн
46+9.04 грн
91+4.54 грн
118+3.48 грн
500+3.14 грн
1000+2.97 грн
4000+2.88 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
P6SMBJ26A-AU_R1_000A1 P6SMBJ26A-AU_R1_000A1 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ26A_R1_00001 P6SMBJ26A_R1_00001 PanJit P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PBHV8050SA_R1_00501 PBHV8050SA_R1_00501 PanJit Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 5957 шт:
термін постачання 14-30 дні (днів)
13+34.51 грн
19+22.51 грн
100+11.11 грн
199+4.72 грн
547+4.46 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
1N5359B_AY_00001 1N5359B_AY_00001 PanJit 1N5338B_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
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1N5359B_R2_00001 1N5359B_R2_00001 PanJit 1N5338B_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
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PEC11SD03M1Q_R1_00501 PanJit Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Version: ESD
Max. off-state voltage: 3V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DFN1006-2
Capacitance: 0.19pF
Type of diode: TVS
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BC858C-AU_R1_000A1 BC858C-AU_R1_000A1 PanJit BC856XW_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC850BW_R1_00001 BC846AW_SERIES.pdf
BC850BW_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Power dissipation: 0.25W
Kind of package: reel; tape
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BC850C-AU_R1_000A1 BC846X-AU_SERIES.pdf
BC850C-AU_R1_000A1
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC850C_R1_00001 BC846X_SERIES.pdf
BC850C_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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MMDT3904_R1_00001 MMDT3904.pdf
MMDT3904_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.225W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
на замовлення 2340 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
39+11.50 грн
60+6.90 грн
100+4.40 грн
500+3.25 грн
1000+2.83 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
1N4746A_R2_00001 1N4728A_SERIES.pdf
1N4746A_R2_00001
Виробник: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; DO41; single diode; tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N47xxA
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ33CA-AU_R1_000A1
P6SMBJ33CA-AU_R1_000A1
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
на замовлення 714 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
15+30.97 грн
23+17.99 грн
95+9.94 грн
261+9.37 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
BAV199_R1_00001 BAS116_SERIES.pdf
BAV199_R1_00001
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: double series x2
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Leakage current: 80nA
на замовлення 5376 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
44+10.25 грн
80+5.15 грн
113+3.66 грн
500+2.71 грн
559+1.68 грн
1537+1.59 грн
Мінімальне замовлення: 44 шт
В кошику  од. на суму  грн.
BAV199W_R1_00001 BAV170W_SERIES.pdf
BAV199W_R1_00001
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 3us; SOT323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: double series x2
Case: SOT323
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 4A
Leakage current: 80nA
на замовлення 2334 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
67+6.63 грн
103+4.02 грн
152+2.71 грн
500+2.12 грн
559+1.68 грн
1537+1.59 грн
Мінімальне замовлення: 67 шт
В кошику  од. на суму  грн.
BAV199S_R1_00001 BAS116TW_SERIES.pdf
BAV199S_R1_00001
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 3us; SOT363; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: double series x2
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Leakage current: 80nA
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P6KE6.8A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
P6SMBJ15CA-AU_R1_000A1
P6SMBJ15CA-AU_R1_000A1
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6KE20CA_AY_00001
Виробник: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; 0.6kW; P6KE; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE20CA_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 19÷21V; 22A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
P6SMBJ33CA_R2_00001
P6SMBJ33CA_R2_00001
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
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MMBTA06-AU_R1_000A1 MMBTA05-AU_SERIES.pdf
MMBTA06-AU_R1_000A1
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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MER2DAL_R1_00701 MER2DAL.pdf
MER2DAL_R1_00701
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD123F; Ufmax: 0.95V
Reverse recovery time: 35ns
Mounting: SMD
Max. forward impulse current: 60A
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40µA
Case: SOD123F
Type of diode: rectifying
на замовлення 4990 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
34+13.27 грн
57+7.31 грн
65+6.39 грн
100+6.10 грн
500+5.69 грн
1000+5.38 грн
3000+4.72 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
BC856B_R1_00001 BC856X_SERIES.pdf
BC856B_R1_00001
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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BC856BS-AU_R1_000A1
BC856BS-AU_R1_000A1
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC856BS_R1_00001 BC856BS.pdf
BC856BS_R1_00001
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
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BC856BW-AU_R1_000A1 BC856XW-AU_SERIES.pdf
BC856BW-AU_R1_000A1
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; SOT323; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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US1D_R1_00001 US1A_SERIES.pdf
US1D_R1_00001
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: SMA
Max. forward voltage: 1V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
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BC849B-AU_R1_000A1 BC846AW_SERIES.pdf
BC849B-AU_R1_000A1
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC849B_R1_00001 BC846AW_SERIES.pdf
BC849B_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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BC849C_R1_00001 BC846X_SERIES.pdf
BC849C_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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BC849CW_R1_00001 BC846AW_SERIES.pdf
BC849CW_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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P4SMAJ22A-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
P4SMAJ22A-AU_R1_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P4SMAJ22A_R1_00001
P4SMAJ22A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.2A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
BZX84C18W_R1_00001 BZX84C2V4W_SER.pdf
BZX84C18W_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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P6KE12CA_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 11.4÷12.6V; 36A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 10.2V
Breakdown voltage: 11.4...12.6V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
1.5KE27A_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 25.7÷28.4V; 40A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 23.1V
Breakdown voltage: 25.7...28.4V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
ER1602CT_T0_00001 ER1600CT_SERIES.pdf
ER1602CT_T0_00001
Виробник: PanJit
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; Ifsm: 125A; TO220AB; tube; 35ns
Mounting: THT
Max. forward impulse current: 125A
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 16A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 0.5mA
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 35ns
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
P6SMBJ28A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ28A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
на замовлення 785 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
21+22.03 грн
33+12.57 грн
100+9.20 грн
167+5.67 грн
458+5.34 грн
Мінімальне замовлення: 21 шт
В кошику  од. на суму  грн.
P6SMBJ28A-AU_R2_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ28A-AU_R2_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ30A-AU_R1_000A1
P6SMBJ30A-AU_R1_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
GBJ3510_T0_00601 GBJ3510.pdf
GBJ3510_T0_00601
Виробник: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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GBJ3510H_T0_00601 GBJ3510H
Виробник: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
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2SD1781A_R1_00001 2SD1781A.pdf
2SD1781A_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Pulsed collector current: 5A
Current gain: 300...900
на замовлення 3242 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
16+29.20 грн
24+17.58 грн
100+11.01 грн
500+7.56 грн
1000+6.16 грн
3000+5.92 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
P6SMBJ36A-AU_R1_000A1
P6SMBJ36A-AU_R1_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ36A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ36A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P4SMAJ33A-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
P4SMAJ33A-AU_R1_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P4SMAJ33A_R1_00001
P4SMAJ33A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7÷40.6V; 7.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
BC848B-AU_R1_000A1 BC846X-AU_SERIES.pdf
BC848B-AU_R1_000A1
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC848B_R1_00001 BC846X_SERIES.pdf
BC848B_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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P6SMBJ10A-AU_R2_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ10A-AU_R2_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ10A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ10A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
1N4752A_R2_00001 1N4728A_SERIES.pdf
1N4752A_R2_00001
Виробник: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 1W; 33V; DO41; single diode; tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 33V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: tape
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1SMA4746_R1_00001 1SMA4728_SERIES.pdf
1SMA4746_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
6+73.44 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
RS1010FL_R1_00001 RS1001FL_SERIES.pdf
RS1010FL_R1_00001
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 500ns; SOD123F; Ufmax: 1.3V; Ir: 50uA
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 1kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
на замовлення 55 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
28+15.93 грн
45+9.28 грн
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
BAS21_R1_00001
BAS21_R1_00001
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1V; Ifsm: 2.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 1µA
Case: SOT23
Type of diode: switching
Reverse recovery time: 50ns
Mounting: SMD
Max. forward impulse current: 2.5A
Max. forward voltage: 1V
Features of semiconductor devices: fast switching
Max. off-state voltage: 250V
Load current: 0.2A
на замовлення 2825 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
50+8.85 грн
80+5.18 грн
119+3.46 грн
500+2.65 грн
640+1.47 грн
1757+1.39 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
P6KE39CA_AY_00001
Виробник: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 37.1÷41V; 11.2A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P4SMAJ6.0CA_R1_00001
P4SMAJ6.0CA_R1_00001
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
ES2D_R1_00001 ES2A_SERIES.pdf
ES2D_R1_00001
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1420 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.12 грн
31+13.47 грн
100+9.70 грн
140+6.74 грн
385+6.33 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
SBA0530Q-AU_R1_000A1 SBA0520Q-AU_SERIES.pdf
SBA0530Q-AU_R1_000A1
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DFN2L; SMD; 30V; 0.5A; reel,tape
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 0.52V
Max. off-state voltage: 30V
Load current: 0.5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 3.5mA
Case: DFN2L
Type of diode: Schottky switching
на замовлення 31000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
24+18.58 грн
46+9.04 грн
91+4.54 грн
118+3.48 грн
500+3.14 грн
1000+2.97 грн
4000+2.88 грн
Мінімальне замовлення: 24 шт
В кошику  од. на суму  грн.
P6SMBJ26A-AU_R1_000A1
P6SMBJ26A-AU_R1_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ26A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ26A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PBHV8050SA_R1_00501
PBHV8050SA_R1_00501
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 5957 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
13+34.51 грн
19+22.51 грн
100+11.11 грн
199+4.72 грн
547+4.46 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
1N5359B_AY_00001 1N5338B_SERIES.pdf
1N5359B_AY_00001
Виробник: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
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1N5359B_R2_00001 1N5338B_SERIES.pdf
1N5359B_R2_00001
Виробник: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; DO201AE; single diode; tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Manufacturer series: 1N53xxB
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В кошику  од. на суму  грн.
PEC11SD03M1Q_R1_00501
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Version: ESD
Max. off-state voltage: 3V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DFN1006-2
Capacitance: 0.19pF
Type of diode: TVS
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BC858C-AU_R1_000A1 BC856XW_SERIES.pdf
BC858C-AU_R1_000A1
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.