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P4SMAJ24CA_R1_00001 P4SMAJ24CA_R1_00001 PanJit P4SMA-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
PSMN015N10NS2_R2_00201 PanJit 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику  од. на суму  грн.
PJC7407_R1_00001 PJC7407_R1_00001 PanJit PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -5.2A
Gate charge: 5.4nC
на замовлення 5795 шт:
термін постачання 14-30 дні (днів)
30+15.04 грн
53+7.89 грн
58+7.15 грн
100+6.98 грн
182+5.18 грн
499+4.93 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
P6KE180A_AY_00001 PanJit Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE180A_R2_00001 PanJit P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
SK24_R1_00001 SK24_R1_00001 PanJit SK22_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 20mA
на замовлення 800 шт:
термін постачання 14-30 дні (днів)
25+17.70 грн
35+11.83 грн
100+7.48 грн
500+5.34 грн
800+5.26 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
SS10100FL-AU_R1_000A1 SS10100FL-AU_R1_000A1 PanJit SS10100FL-AU.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.8V
Features of semiconductor devices: fast switching
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: SOD123F
Type of diode: Schottky rectifying
на замовлення 3672 шт:
термін постачання 14-30 дні (днів)
27+16.72 грн
40+10.27 грн
53+7.80 грн
100+6.95 грн
210+4.48 грн
578+4.23 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
SS10100FL_R1_00001 SS10100FL_R1_00001 PanJit SS1020FL_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 0.8V
Max. load current: 2A
Leakage current: 0.1mA
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
34+13.27 грн
37+11.50 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
PMSM810_R2_00301 PanJit Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 200A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 8A
Case: M6
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P4SMAJ15CA_R1_00001 P4SMAJ15CA_R1_00001 PanJit Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P4SMAJ15CA-AU_R1_000A1 P4SMAJ15CA-AU_R1_000A1 PanJit P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
SS2040LL_R1_00001 SS2040LL_R1_00001 PanJit SS2040LL.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.45V
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 0.5mA
Type of diode: Schottky rectifying
на замовлення 735 шт:
термін постачання 14-30 дні (днів)
46+9.73 грн
67+6.16 грн
100+4.95 грн
198+4.75 грн
500+4.31 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
1.5SMCJ58A-AU_R1_000A1 1.5SMCJ58A-AU_R1_000A1 PanJit 1.5SMCJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷74.1V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
1.5SMCJ58A_R1_00001 1.5SMCJ58A_R1_00001 PanJit 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷74.1V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ58A_R1_00001 3.0SMCJ58A_R1_00001 PanJit 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6KE150A_AY_00001 PanJit Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE150A_R2_00001 PanJit P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PJSD36CW_R1_00001 PJSD36CW_R1_00001 PanJit PJSD05CW_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Max. off-state voltage: 36V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 45pF
Type of diode: TVS
Number of channels: 1
Mounting: SMD
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJSOT24C-05-AU_R1_000A1 PJSOT24C-05-AU_R1_000A1 PanJit Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Application: automotive industry
Mounting: SMD
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT23
Capacitance: 0.15nF
Type of diode: TVS
Number of channels: 2
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ12CA-AU_R1_000A1 P6SMBJ12CA-AU_R1_000A1 PanJit Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ12CA_R1_00001 P6SMBJ12CA_R1_00001 PanJit P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
BC817-16_R1_00001 BC817-16_R1_00001 PanJit BC846BS-AU_BC847AS-AU.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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BC817-16-AU_R1_000A1 BC817-16-AU_R1_000A1 PanJit BC817-AU_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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BC817-16W-AU_R1_000A1 BC817-16W-AU_R1_000A1 PanJit BC817-16W-AU_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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BC817-16W_R1_00001 BC817-16W_R1_00001 PanJit BC817-16W_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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P6SMBJ18A_R1_00001 P6SMBJ18A_R1_00001 PanJit P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
ES1G_R1_00001 ES1G_R1_00001 PanJit ES1A_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
на замовлення 1799 шт:
термін постачання 14-30 дні (днів)
20+22.12 грн
44+9.45 грн
100+7.70 грн
195+4.82 грн
500+4.81 грн
536+4.55 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BC857A-AU_R1_000A1 BC857A-AU_R1_000A1 PanJit BC856X-AU_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC857A_R1_00001 BC857A_R1_00001 PanJit BC856X_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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P6SMBJ30CA-AU_R1_000A1 P6SMBJ30CA-AU_R1_000A1 PanJit Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ30CA_R1_00001 P6SMBJ30CA_R1_00001 PanJit P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
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1N5352B_AY_00001 1N5352B_AY_00001 PanJit 1N5338B_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 5W; 15V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 15V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
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PJSD36CW-AU_R1_000A1 PJSD36CW-AU_R1_000A1 PanJit PJSD05CW-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Max. off-state voltage: 36V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 45pF
Type of diode: TVS
Number of channels: 1
Mounting: SMD
Breakdown voltage: 40.57V
Peak pulse power dissipation: 0.35kW
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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PCDH2065CCG1_T0_00601 PCDH2065CCG1_T0_00601 PanJit PCDH2065CCG1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 0.64kA
Max. forward voltage: 1.8V
Power dissipation: 98W
Technology: SiC
Load current: 10A x2
Max. load current: 40A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 70µA
Case: TO247-3
Type of diode: Schottky rectifying
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
2+415.87 грн
4+274.42 грн
10+258.81 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PCDH2065CCGB_T0_00601 PanJit PCDH2065CCGB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 704A
Max. forward voltage: 1.4V
Power dissipation: 138W
Technology: SiC
Load current: 10A x2
Max. load current: 48A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Case: TO247-3
Type of diode: Schottky rectifying
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PCDH2065CCGC_T0_00601 PanJit PCDH2065CCGC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 384A
Max. forward voltage: 1.8V
Power dissipation: 90W
Technology: SiC
Load current: 10A x2
Max. load current: 28A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Case: TO247-3
Type of diode: Schottky rectifying
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MB310_R1_00001 MB310_R1_00001 PanJit MB34_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 1mA
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.8V
Max. off-state voltage: 0.1kV
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P6SMBJ28CA-AU_R1_000A1 P6SMBJ28CA-AU_R1_000A1 PanJit Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
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P6SMBJ28CA_R1_00001 P6SMBJ28CA_R1_00001 PanJit Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
1N5350B_AY_00001 1N5350B_AY_00001 PanJit 1N5338B_SERIES.pdf Category: THT Zener diodes
Description: Diode: Zener; 5W; 13V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 13V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
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MMBTA06_R1_00001 MMBTA06_R1_00001 PanJit MMBTA05_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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В кошику  од. на суму  грн.
BC857BS_R1_00001 BC857BS_R1_00001 PanJit BC857BS.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
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В кошику  од. на суму  грн.
P4SMAJ12CA_R1_00001 P4SMAJ12CA_R1_00001 PanJit P4SMA-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
на замовлення 2091 шт:
термін постачання 14-30 дні (днів)
21+21.24 грн
39+10.68 грн
51+8.13 грн
100+7.23 грн
500+6.08 грн
Мінімальне замовлення: 21 шт
В кошику  од. на суму  грн.
1.5SMCJ8.0A_R1_00001 1.5SMCJ8.0A_R1_00001 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 8.89÷10.23V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
BZX84C33-AU_R1_000A1 BZX84C33-AU_R1_000A1 PanJit BZX84C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 33V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZX84C33_R1_00501 BZX84C33_R1_00501 PanJit BZX84C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 33V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84C33W_R1_00001 BZX84C33W_R1_00001 PanJit BZX84C2V4W_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 33V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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В кошику  од. на суму  грн.
1.5SMCJ5.0A_R1_00001 1.5SMCJ5.0A_R1_00001 PanJit 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ5.0A_R2_00001 3.0SMCJ5.0A_R2_00001 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS70S-AU_R1_000A1 BAS70S-AU_R1_000A1 PanJit BAS70-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 0.9V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 45µA
на замовлення 26970 шт:
термін постачання 14-30 дні (днів)
59+7.56 грн
83+4.98 грн
125+3.29 грн
449+2.10 грн
1235+1.98 грн
Мінімальне замовлення: 59 шт
В кошику  од. на суму  грн.
BC857AW-AU_R1_000A1 BC857AW-AU_R1_000A1 PanJit BC856XW_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC857AW_R1_00001 BC857AW_R1_00001 PanJit 20191022120008o3371igSG63.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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В кошику  од. на суму  грн.
P6SMBJ24CA-AU_R1_000A1 P6SMBJ24CA-AU_R1_000A1 PanJit Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ24CA_R1_00001 P6SMBJ24CA_R1_00001 PanJit P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
MMBT2369A_R1_00001 MMBT2369A_R1_00001 PanJit MMBT2369A.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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BC858B-AU_R1_000A1 BC858B-AU_R1_000A1 PanJit BC856X-AU_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC858B_R1_00001 BC858B_R1_00001 PanJit BC856X_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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BC858BW_R1_00001 BC858BW_R1_00001 PanJit BC856XW_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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BC817DS-AU_R1_000A1 PanJit Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23-6L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Application: automotive industry
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BC817DS-25_R1_00001 PanJit BC817DS-25 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23-6L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
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P4SMAJ24CA_R1_00001 P4SMA-AU_SERIES.pdf
P4SMAJ24CA_R1_00001
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
PSMN015N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Виробник: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -5.2A
Gate charge: 5.4nC
на замовлення 5795 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
30+15.04 грн
53+7.89 грн
58+7.15 грн
100+6.98 грн
182+5.18 грн
499+4.93 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
P6KE180A_AY_00001
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE180A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 171÷189V; 2.4A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 171...189V
Max. forward impulse current: 2.4A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
SK24_R1_00001 SK22_SERIES.pdf
SK24_R1_00001
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 20mA
на замовлення 800 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
25+17.70 грн
35+11.83 грн
100+7.48 грн
500+5.34 грн
800+5.26 грн
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
SS10100FL-AU_R1_000A1 SS10100FL-AU.pdf
SS10100FL-AU_R1_000A1
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.8V
Features of semiconductor devices: fast switching
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: SOD123F
Type of diode: Schottky rectifying
на замовлення 3672 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
27+16.72 грн
40+10.27 грн
53+7.80 грн
100+6.95 грн
210+4.48 грн
578+4.23 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
SS10100FL_R1_00001 SS1020FL_SERIES.pdf
SS10100FL_R1_00001
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward voltage: 0.8V
Max. load current: 2A
Leakage current: 0.1mA
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
34+13.27 грн
37+11.50 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
PMSM810_R2_00301
Виробник: PanJit
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 200A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 8A
Case: M6
товару немає в наявності
В кошику  од. на суму  грн.
P4SMAJ15CA_R1_00001
P4SMAJ15CA_R1_00001
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P4SMAJ15CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
P4SMAJ15CA-AU_R1_000A1
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
SS2040LL_R1_00001 SS2040LL.pdf
SS2040LL_R1_00001
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 2A; reel,tape
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.45V
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Leakage current: 0.5mA
Type of diode: Schottky rectifying
на замовлення 735 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
46+9.73 грн
67+6.16 грн
100+4.95 грн
198+4.75 грн
500+4.31 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
1.5SMCJ58A-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
1.5SMCJ58A-AU_R1_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷74.1V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
1.5SMCJ58A_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ58A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷74.1V; 16A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ58A_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ58A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 64.4÷74.1V; 32A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.1V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6KE150A_AY_00001
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE150A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 143÷158V; 2.9A; unidirectional; DO15; P6KE
Type of diode: TVS
Max. off-state voltage: 128V
Breakdown voltage: 143...158V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PJSD36CW_R1_00001 PJSD05CW_SERIES.pdf
PJSD36CW_R1_00001
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Max. off-state voltage: 36V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 45pF
Type of diode: TVS
Number of channels: 1
Mounting: SMD
Breakdown voltage: 29.4V
Peak pulse power dissipation: 0.35kW
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJSOT24C-05-AU_R1_000A1
PJSOT24C-05-AU_R1_000A1
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Application: automotive industry
Mounting: SMD
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT23
Capacitance: 0.15nF
Type of diode: TVS
Number of channels: 2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ12CA-AU_R1_000A1
P6SMBJ12CA-AU_R1_000A1
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ12CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ12CA_R1_00001
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 30.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
BC817-16_R1_00001 BC846BS-AU_BC847AS-AU.pdf
BC817-16_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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В кошику  од. на суму  грн.
BC817-16-AU_R1_000A1 BC817-AU_SERIES.pdf
BC817-16-AU_R1_000A1
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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BC817-16W-AU_R1_000A1 BC817-16W-AU_SERIES.pdf
BC817-16W-AU_R1_000A1
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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BC817-16W_R1_00001 BC817-16W_SERIES.pdf
BC817-16W_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.3W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT323
Pulsed collector current: 1A
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ18A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ18A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
ES1G_R1_00001 ES1A_SERIES.pdf
ES1G_R1_00001
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
на замовлення 1799 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.12 грн
44+9.45 грн
100+7.70 грн
195+4.82 грн
500+4.81 грн
536+4.55 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BC857A-AU_R1_000A1 BC856X-AU_SERIES.pdf
BC857A-AU_R1_000A1
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
BC857A_R1_00001 BC856X_SERIES.pdf
BC857A_R1_00001
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
P6SMBJ30CA-AU_R1_000A1
P6SMBJ30CA-AU_R1_000A1
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ30CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ30CA_R1_00001
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
1N5352B_AY_00001 1N5338B_SERIES.pdf
1N5352B_AY_00001
Виробник: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 15V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 15V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
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PJSD36CW-AU_R1_000A1 PJSD05CW-AU_SERIES.pdf
PJSD36CW-AU_R1_000A1
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Max. off-state voltage: 36V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOD323
Capacitance: 45pF
Type of diode: TVS
Number of channels: 1
Mounting: SMD
Breakdown voltage: 40.57V
Peak pulse power dissipation: 0.35kW
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PCDH2065CCG1_T0_00601 PCDH2065CCG1.pdf
PCDH2065CCG1_T0_00601
Виробник: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 0.64kA
Max. forward voltage: 1.8V
Power dissipation: 98W
Technology: SiC
Load current: 10A x2
Max. load current: 40A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 70µA
Case: TO247-3
Type of diode: Schottky rectifying
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+415.87 грн
4+274.42 грн
10+258.81 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PCDH2065CCGB_T0_00601 PCDH2065CCGB.pdf
Виробник: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 704A
Max. forward voltage: 1.4V
Power dissipation: 138W
Technology: SiC
Load current: 10A x2
Max. load current: 48A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Case: TO247-3
Type of diode: Schottky rectifying
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PCDH2065CCGC_T0_00601 PCDH2065CCGC.pdf
Виробник: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Mounting: THT
Max. off-state voltage: 650V
Max. forward impulse current: 384A
Max. forward voltage: 1.8V
Power dissipation: 90W
Technology: SiC
Load current: 10A x2
Max. load current: 28A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Case: TO247-3
Type of diode: Schottky rectifying
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MB310_R1_00001 MB34_SERIES.pdf
MB310_R1_00001
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 1mA
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.8V
Max. off-state voltage: 0.1kV
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P6SMBJ28CA-AU_R1_000A1
P6SMBJ28CA-AU_R1_000A1
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
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P6SMBJ28CA_R1_00001
P6SMBJ28CA_R1_00001
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
1N5350B_AY_00001 1N5338B_SERIES.pdf
1N5350B_AY_00001
Виробник: PanJit
Category: THT Zener diodes
Description: Diode: Zener; 5W; 13V; DO201AE; single diode; Ammo Pack; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 13V
Case: DO201AE
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N53xxB
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MMBTA06_R1_00001 MMBTA05_SERIES.pdf
MMBTA06_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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BC857BS_R1_00001 BC857BS.pdf
BC857BS_R1_00001
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
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P4SMAJ12CA_R1_00001 P4SMA-AU_SERIES.pdf
P4SMAJ12CA_R1_00001
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
на замовлення 2091 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
21+21.24 грн
39+10.68 грн
51+8.13 грн
100+7.23 грн
500+6.08 грн
Мінімальне замовлення: 21 шт
В кошику  од. на суму  грн.
1.5SMCJ8.0A_R1_00001
1.5SMCJ8.0A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 8.89÷10.23V; 110.3A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...10.23V
Max. forward impulse current: 110.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
BZX84C33-AU_R1_000A1 BZX84C2V4-AU_SER.pdf
BZX84C33-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 33V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZX84C33_R1_00501 BZX84C2V4_SERIES.pdf
BZX84C33_R1_00501
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 33V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84C33W_R1_00001 BZX84C2V4W_SER.pdf
BZX84C33W_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 33V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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1.5SMCJ5.0A_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ5.0A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7.25V; 163A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 163A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ5.0A_R2_00001
3.0SMCJ5.0A_R2_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 6.4÷7.25V; 326A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.25V
Max. forward impulse current: 326A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BAS70S-AU_R1_000A1 BAS70-AU_SERIES.pdf
BAS70S-AU_R1_000A1
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward voltage: 0.9V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 45µA
на замовлення 26970 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
59+7.56 грн
83+4.98 грн
125+3.29 грн
449+2.10 грн
1235+1.98 грн
Мінімальне замовлення: 59 шт
В кошику  од. на суму  грн.
BC857AW-AU_R1_000A1 BC856XW_SERIES.pdf
BC857AW-AU_R1_000A1
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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В кошику  од. на суму  грн.
BC857AW_R1_00001 20191022120008o3371igSG63.pdf
BC857AW_R1_00001
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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P6SMBJ24CA-AU_R1_000A1
P6SMBJ24CA-AU_R1_000A1
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ24CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ24CA_R1_00001
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
MMBT2369A_R1_00001 MMBT2369A.pdf
MMBT2369A_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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BC858B-AU_R1_000A1 BC856X-AU_SERIES.pdf
BC858B-AU_R1_000A1
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC858B_R1_00001 BC856X_SERIES.pdf
BC858B_R1_00001
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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BC858BW_R1_00001 BC856XW_SERIES.pdf
BC858BW_R1_00001
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
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BC817DS-AU_R1_000A1
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23-6L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
Application: automotive industry
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BC817DS-25_R1_00001 BC817DS-25
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.33W; SOT23-6L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 1A
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В кошику  од. на суму  грн.