| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PE4524CS_R1_00701 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 31V; 8.4A; unidirectional; SOD323; Ch: 1 Max. off-state voltage: 24V Semiconductor structure: unidirectional Leakage current: 0.1µA Case: SOD323 Capacitance: 0.0825nF Type of diode: TVS Number of channels: 1 Mounting: SMD Breakdown voltage: 31V Max. forward impulse current: 8.4A |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMBJ51A_R1_00001 | PanJit |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 7.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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BZT52-C2V4-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 2.4V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52-C2V4_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 2.4V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
BC847B-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJE8438_R1_00001 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.36A Case: SOT523 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJE8438TB89_R1_00701 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; SC89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.36A Case: SC89 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
 |
RS1002FL_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V Max. forward impulse current: 30A Max. forward voltage: 1.3V Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 200V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50µA Case: SOD123F Type of diode: rectifying Reverse recovery time: 0.5µs Mounting: SMD |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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RS1008FL_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V Max. forward impulse current: 30A Max. forward voltage: 1.3V Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 0.8kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50µA Case: SOD123F Type of diode: rectifying Reverse recovery time: 0.5µs Mounting: SMD |
на замовлення 2580 шт: термін постачання 14-30 дні (днів) |
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RS1006FL_R1_00001 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V Max. forward impulse current: 30A Max. forward voltage: 1.3V Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 0.6kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50µA Case: SOD123F Type of diode: rectifying Reverse recovery time: 0.5µs Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6SMBJ48CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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P6SMBJ48CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| PJB180N04S7-AU_R2_002A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 131A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 131A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||
| PJB180N04V7-AU_R2_002A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 126A; DFN5060X-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 126A Case: DFN5060X-8 Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | |||||||||||||||
 |
BC846BS-AU_R1_000A1 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.225W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT363 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
P4SMAJ120A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Max. forward impulse current: 2A Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. |
| PE4524CS_R1_00701 |
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 31V; 8.4A; unidirectional; SOD323; Ch: 1
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: SOD323
Capacitance: 0.0825nF
Type of diode: TVS
Number of channels: 1
Mounting: SMD
Breakdown voltage: 31V
Max. forward impulse current: 8.4A
Category: Protection diodes - arrays
Description: Diode: TVS; 31V; 8.4A; unidirectional; SOD323; Ch: 1
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: SOD323
Capacitance: 0.0825nF
Type of diode: TVS
Number of channels: 1
Mounting: SMD
Breakdown voltage: 31V
Max. forward impulse current: 8.4A
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| P6SMBJ51A_R1_00001 |
|
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BZT52-C2V4-AU_R1_000A1 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 2.4V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 2.4V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZT52-C2V4_R1_00001 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 2.4V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 2.4V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BC847B-AU_R1_000A1 |
|
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJE8438_R1_00001 |
|
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Case: SOT523
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Case: SOT523
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJE8438TB89_R1_00701 |
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Case: SC89
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Case: SC89
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| RS1002FL_R1_00001 |
|
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.50 грн |
| 67+ | 6.16 грн |
| 109+ | 3.78 грн |
| 257+ | 3.66 грн |
| 500+ | 3.34 грн |
| RS1008FL_R1_00001 |
|
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.8kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.8kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
на замовлення 2580 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.04 грн |
| 49+ | 8.54 грн |
| 100+ | 5.14 грн |
| 249+ | 3.77 грн |
| 500+ | 3.71 грн |
| 684+ | 3.57 грн |
| 1000+ | 3.43 грн |
| RS1006FL_R1_00001 |
|
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| P6SMBJ48CA-AU_R1_000A1 |
|
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| P6SMBJ48CA_R1_00001 |
|
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| PJB180N04S7-AU_R2_002A1 |
|
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 131A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 131A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 131A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 131A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| PJB180N04V7-AU_R2_002A1 |
|
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 126A; DFN5060X-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Case: DFN5060X-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 126A; DFN5060X-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Case: DFN5060X-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| BC846BS-AU_R1_000A1 |
|
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.225W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.225W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| P4SMAJ120A_R1_00001 |
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 2A
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 2A
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.