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MMBTA56-AU_R1_000A1 MMBTA56-AU_R1_000A1 PanJit MMBTA05-AU_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MMBTA56-AU_R2_000A1 MMBTA56-AU_R2_000A1 PanJit Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MMBTA56_R1_00001 MMBTA56_R1_00001 PanJit MMBTA05_SERIES.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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1.5SMCJ24A-AU_R1_000A1 1.5SMCJ24A-AU_R1_000A1 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
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1.5SMCJ24A_R1_00001 1.5SMCJ24A_R1_00001 PanJit 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ24A_R1_00001 3.0SMCJ24A_R1_00001 PanJit 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
SS1060FL_R1_00001 SS1060FL_R1_00001 PanJit SS1020FL_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.7V
Features of semiconductor devices: fast switching
Max. off-state voltage: 60V
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 30µA
Case: SOD123F
Type of diode: Schottky rectifying
на замовлення 2626 шт:
термін постачання 14-30 дні (днів)
34+13.27 грн
57+7.31 грн
100+4.70 грн
500+3.35 грн
1000+3.09 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
P4SMAJ36A-AU_R1_000A1 P4SMAJ36A-AU_R1_000A1 PanJit P4SMAJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P4SMAJ36A_R1_00001 P4SMAJ36A_R1_00001 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P6KE250A_AY_00001 PanJit Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 214V
Breakdown voltage: 237...263V
Max. forward impulse current: 1.8A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE250A_R2_00001 PanJit P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 214V
Breakdown voltage: 237...263V
Max. forward impulse current: 1.8A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
P4SMAJ30A_R1_00001 P4SMAJ30A_R1_00001 PanJit P4SMA-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 8.3A
Features of semiconductor devices: glass passivated
на замовлення 1680 шт:
термін постачання 14-30 дні (днів)
19+23.89 грн
34+12.16 грн
50+9.37 грн
100+8.38 грн
174+5.42 грн
477+5.09 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
P4SMAJ30A-AU_R1_000A1 P4SMAJ30A-AU_R1_000A1 PanJit P4SMA-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 8.3A
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
BAV103_R2_10001 PanJit Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 75ns; MiniMELF; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 0.1µA
товару немає в наявності
 Мінімальне замовлення: 20000 шт
В кошику  од. на суму  грн.
P6SMBJ6.0CA_R1_00001 P6SMBJ6.0CA_R1_00001 PanJit P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
1.5SMCJ20A_R1_00001 1.5SMCJ20A_R1_00001 PanJit 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷25.5V; 46.3A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ20A_R1_00001 3.0SMCJ20A_R1_00001 PanJit 3.0SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 92.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
GBU1510_T0_00601 GBU1510_T0_00601 PanJit GBU1510.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
на замовлення 166 шт:
термін постачання 14-30 дні (днів)
6+79.63 грн
7+61.79 грн
10+54.23 грн
20+46.59 грн
100+40.01 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
BZX84C12_R1_00001 BZX84C12_R1_00001 PanJit BZX84C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 12V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 5246 шт:
термін постачання 14-30 дні (днів)
50+8.85 грн
100+4.11 грн
144+2.86 грн
250+2.28 грн
500+2.04 грн
740+1.27 грн
2035+1.20 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BZX84C12-AU_R1_000A1 BZX84C12-AU_R1_000A1 PanJit BZX84C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 12V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZX84C12W_R1_00001 BZX84C12W_R1_00001 PanJit BZX84C2V4W_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 12V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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PJMF580N60E1_T0_00001 PJMF580N60E1_T0_00001 PanJit PJMF580N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 28W
Case: ITO220AB
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate-source voltage: ±30V
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BAS40SDW-AU_R1_000A1 BAS40SDW-AU_R1_000A1 PanJit BAS40TW-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Max. forward voltage: 1V
Application: automotive industry
Leakage current: 22µA
на замовлення 2920 шт:
термін постачання 14-30 дні (днів)
32+14.20 грн
43+9.62 грн
55+7.56 грн
100+5.11 грн
255+3.67 грн
500+3.58 грн
701+3.48 грн
1000+3.46 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
BAS40S_R1_00001 BAS40S_R1_00001 PanJit BAS40_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward voltage: 1V
Leakage current: 1µA
на замовлення 1892 шт:
термін постачання 14-30 дні (днів)
38+11.89 грн
58+7.11 грн
101+4.09 грн
200+3.53 грн
500+2.88 грн
519+1.81 грн
1424+1.71 грн
Мінімальне замовлення: 38 шт
В кошику  од. на суму  грн.
RS1J_R1_00001 RS1J_R1_00001 PanJit RS1A_SERIES.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.15mA
на замовлення 1022 шт:
термін постачання 14-30 дні (днів)
27+16.81 грн
59+7.07 грн
63+6.62 грн
100+6.05 грн
337+2.79 грн
926+2.64 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
P4SMAJ18A-AU_R1_000A1 P4SMAJ18A-AU_R1_000A1 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P4SMAJ18A_R1_00001 P4SMAJ18A_R1_00001 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
PJMF280N60E1_T0_00001 PJMF280N60E1_T0_00001 PanJit PJMF280N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 34W
Case: ITO220AB
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 41.4A
Gate-source voltage: ±30V
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
3+161.04 грн
10+88.74 грн
50+80.52 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
PJMD280N60E1_L2_00601 PanJit PJMD280N60E1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 49.1W
Case: TO252AA
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 41.4A
Gate-source voltage: ±30V
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PJMD580N60E1_L2_00001 PJMD580N60E1_L2_00001 PanJit Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 54W
Case: TO252AA
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 24A
Gate-source voltage: ±30V
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P6KE160A_AY_00001 PanJit Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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P6KE160A_R2_00001 PanJit P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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P6KE24CA_AY_00001 PanJit Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Kind of package: Ammo Pack
Max. forward impulse current: 18A
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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1.5KE6.8CA_R2_00001 PanJit 1.5KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45÷7.14V; 143A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
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 Мінімальне замовлення: 1250 шт
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BC848C-AU_R1_000A1 BC848C-AU_R1_000A1 PanJit BC846X-AU_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC848C_R1_00001 BC848C_R1_00001 PanJit BC846X_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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2N7002K-AU_R1_000A2 2N7002K-AU_R1_000A2 PanJit 2N7002K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Gate charge: 0.8nC
Application: automotive industry
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P6KE15A_AY_00001 PanJit Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: Ammo Pack
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE15A_R2_00001 PanJit P6KE_SERIES.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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P6SMBJ16A-AU_R1_000A1 P6SMBJ16A-AU_R1_000A1 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ16A_R1_00001 P6SMBJ16A_R1_00001 PanJit P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
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BZX84C5V1_R1_00001 BZX84C5V1_R1_00001 PanJit BZX84C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 2713 шт:
термін постачання 14-30 дні (днів)
59+7.57 грн
88+4.68 грн
136+3.02 грн
500+2.19 грн
738+1.27 грн
2029+1.20 грн
Мінімальне замовлення: 59 шт
В кошику  од. на суму  грн.
BZX84C5V1-AU_R1_000A1 BZX84C5V1-AU_R1_000A1 PanJit BZX84C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZX84C5V1W_R1_00001 BZX84C5V1W_R1_00001 PanJit BZX84C2V4W_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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2N7002K_R1_00001 2N7002K_R1_00001 PanJit 2N7002K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Gate charge: 0.8nC
на замовлення 188 шт:
термін постачання 14-30 дні (днів)
56+7.96 грн
109+3.78 грн
153+2.69 грн
Мінімальне замовлення: 56 шт
В кошику  од. на суму  грн.
2N7002K_R2_00001 2N7002K_R2_00001 PanJit Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002KTB_R1_00001 PanJit 2N7002KTB.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT523
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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BZX84C15W-AU_R1_000A1 BZX84C15W-AU_R1_000A1 PanJit BZX84C2V4W-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BAT54CW_R1_00001 BAT54CW_R1_00001 PanJit BAT54W_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Leakage current: 2µA
на замовлення 1543 шт:
термін постачання 14-30 дні (днів)
37+12.27 грн
78+5.29 грн
114+3.61 грн
500+2.46 грн
649+1.45 грн
Мінімальне замовлення: 37 шт
В кошику  од. на суму  грн.
BAT54C_R1_00001 BAT54C_R1_00001 PanJit BAT54_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Leakage current: 2µA
на замовлення 1855 шт:
термін постачання 14-30 дні (днів)
43+10.48 грн
91+4.56 грн
114+3.62 грн
130+3.17 грн
250+2.56 грн
500+2.21 грн
671+1.40 грн
1842+1.32 грн
Мінімальне замовлення: 43 шт
В кошику  од. на суму  грн.
BAT54C-AU_R1_000A1 BAT54C-AU_R1_000A1 PanJit BAT54-AU_SERIES.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Leakage current: 90µA
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BAT54CTB6_R1_00001 BAT54CTB6_R1_00001 PanJit BAT54TB6_BAT54CTB6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT563
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Leakage current: 2µA
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1N4448WS_R1_00001 1N4448WS_R1_00001 PanJit Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Kind of package: reel; tape
на замовлення 4490 шт:
термін постачання 14-30 дні (днів)
23+19.47 грн
46+9.04 грн
65+6.34 грн
100+4.54 грн
250+3.17 грн
500+2.54 грн
692+1.36 грн
1901+1.28 грн
Мінімальне замовлення: 23 шт
В кошику  од. на суму  грн.
MMSZ5240B-AU_R1_000A1 MMSZ5240B-AU_R1_000A1 PanJit MMSZ5221B-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 10V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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MMSZ5240B_R1_00001 MMSZ5240B_R1_00001 PanJit MMSZ5221B_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 10V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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MMSZ5240BS_R1_00001 MMSZ5240BS_R1_00001 PanJit MMSZ5221BS_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 10V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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P4SMAJ24CA-AU_R1_000A1 P4SMAJ24CA-AU_R1_000A1 PanJit P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
20+22.21 грн
137+6.90 грн
375+6.49 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BC850CW-AU_R1_000A1 BC850CW-AU_R1_000A1 PanJit BC846AW-AU_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC850B-AU_R1_000A1 BC850B-AU_R1_000A1 PanJit BC846AW_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Power dissipation: 0.33W
Application: automotive industry
Kind of package: reel; tape
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BC850B_R1_00001 BC850B_R1_00001 PanJit BC846AW_SERIES.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Power dissipation: 0.33W
Kind of package: reel; tape
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MMBTA56-AU_R1_000A1 MMBTA05-AU_SERIES.pdf
MMBTA56-AU_R1_000A1
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MMBTA56-AU_R2_000A1
MMBTA56-AU_R2_000A1
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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MMBTA56_R1_00001 MMBTA05_SERIES.pdf
MMBTA56_R1_00001
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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1.5SMCJ24A-AU_R1_000A1
1.5SMCJ24A-AU_R1_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
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1.5SMCJ24A_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ24A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ24A_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ24A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
SS1060FL_R1_00001 SS1020FL_SERIES.pdf
SS1060FL_R1_00001
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.7V
Features of semiconductor devices: fast switching
Max. off-state voltage: 60V
Load current: 1A
Max. load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 30µA
Case: SOD123F
Type of diode: Schottky rectifying
на замовлення 2626 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
34+13.27 грн
57+7.31 грн
100+4.70 грн
500+3.35 грн
1000+3.09 грн
Мінімальне замовлення: 34 шт
В кошику  од. на суму  грн.
P4SMAJ36A-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
P4SMAJ36A-AU_R1_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P4SMAJ36A_R1_00001
P4SMAJ36A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷44.2V; 6.9A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P6KE250A_AY_00001
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 214V
Breakdown voltage: 237...263V
Max. forward impulse current: 1.8A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE250A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 237÷263V; 1.8A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 214V
Breakdown voltage: 237...263V
Max. forward impulse current: 1.8A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
P4SMAJ30A_R1_00001 P4SMA-AU_SERIES.pdf
P4SMAJ30A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 8.3A
Features of semiconductor devices: glass passivated
на замовлення 1680 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
19+23.89 грн
34+12.16 грн
50+9.37 грн
100+8.38 грн
174+5.42 грн
477+5.09 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
P4SMAJ30A-AU_R1_000A1 P4SMA-AU_SERIES.pdf
P4SMAJ30A-AU_R1_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Max. forward impulse current: 8.3A
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
BAV103_R2_10001
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 75ns; MiniMELF; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Leakage current: 0.1µA
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику  од. на суму  грн.
P6SMBJ6.0CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ6.0CA_R1_00001
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
1.5SMCJ20A_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ20A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷25.5V; 46.3A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 46.3A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ20A_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ20A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 22.2÷25.5V; 92.6A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...25.5V
Max. forward impulse current: 92.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
GBU1510_T0_00601 GBU1510.pdf
GBU1510_T0_00601
Виробник: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
на замовлення 166 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
6+79.63 грн
7+61.79 грн
10+54.23 грн
20+46.59 грн
100+40.01 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
BZX84C12_R1_00001 BZX84C2V4_SERIES.pdf
BZX84C12_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 12V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 5246 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
50+8.85 грн
100+4.11 грн
144+2.86 грн
250+2.28 грн
500+2.04 грн
740+1.27 грн
2035+1.20 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
BZX84C12-AU_R1_000A1 BZX84C2V4-AU_SER.pdf
BZX84C12-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 12V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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В кошику  од. на суму  грн.
BZX84C12W_R1_00001 BZX84C2V4W_SER.pdf
BZX84C12W_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 12V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
PJMF580N60E1_T0_00001 PJMF580N60E1.pdf
PJMF580N60E1_T0_00001
Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 28W
Case: ITO220AB
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate-source voltage: ±30V
товару немає в наявності
В кошику  од. на суму  грн.
BAS40SDW-AU_R1_000A1 BAS40TW-AU_SERIES.pdf
BAS40SDW-AU_R1_000A1
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT363; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT363
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series x2
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Max. forward voltage: 1V
Application: automotive industry
Leakage current: 22µA
на замовлення 2920 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
32+14.20 грн
43+9.62 грн
55+7.56 грн
100+5.11 грн
255+3.67 грн
500+3.58 грн
701+3.48 грн
1000+3.46 грн
Мінімальне замовлення: 32 шт
В кошику  од. на суму  грн.
BAS40S_R1_00001 BAS40_SERIES.pdf
BAS40S_R1_00001
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Max. forward voltage: 1V
Leakage current: 1µA
на замовлення 1892 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
38+11.89 грн
58+7.11 грн
101+4.09 грн
200+3.53 грн
500+2.88 грн
519+1.81 грн
1424+1.71 грн
Мінімальне замовлення: 38 шт
В кошику  од. на суму  грн.
RS1J_R1_00001 RS1A_SERIES.pdf
RS1J_R1_00001
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 0.15mA
на замовлення 1022 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
27+16.81 грн
59+7.07 грн
63+6.62 грн
100+6.05 грн
337+2.79 грн
926+2.64 грн
Мінімальне замовлення: 27 шт
В кошику  од. на суму  грн.
P4SMAJ18A-AU_R1_000A1
P4SMAJ18A-AU_R1_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P4SMAJ18A_R1_00001
P4SMAJ18A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
PJMF280N60E1_T0_00001 PJMF280N60E1.pdf
PJMF280N60E1_T0_00001
Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 34W
Case: ITO220AB
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 41.4A
Gate-source voltage: ±30V
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+161.04 грн
10+88.74 грн
50+80.52 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
PJMD280N60E1_L2_00601 PJMD280N60E1.pdf
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 49.1W
Case: TO252AA
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 41.4A
Gate-source voltage: ±30V
товару немає в наявності
В кошику  од. на суму  грн.
PJMD580N60E1_L2_00001
PJMD580N60E1_L2_00001
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 54W
Case: TO252AA
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 24A
Gate-source voltage: ±30V
товару немає в наявності
В кошику  од. на суму  грн.
P6KE160A_AY_00001
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE160A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 152÷168V; 2.7A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 136V
Breakdown voltage: 152...168V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
P6KE24CA_AY_00001
Виробник: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 18A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Manufacturer series: P6KE
Kind of package: Ammo Pack
Max. forward impulse current: 18A
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
1.5KE6.8CA_R2_00001 1.5KE_SERIES.pdf
Виробник: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45÷7.14V; 143A; bidirectional; DO201AE; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
BC848C-AU_R1_000A1 BC846X-AU_SERIES.pdf
BC848C-AU_R1_000A1
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC848C_R1_00001 BC846X_SERIES.pdf
BC848C_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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2N7002K-AU_R1_000A2 2N7002K-AU.pdf
2N7002K-AU_R1_000A2
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Gate charge: 0.8nC
Application: automotive industry
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P6KE15A_AY_00001
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: Ammo Pack
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Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6KE15A_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 14.3÷15.8V; 28A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 14.3...15.8V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
P6SMBJ16A-AU_R1_000A1
P6SMBJ16A-AU_R1_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ16A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ16A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
BZX84C5V1_R1_00001 BZX84C2V4_SERIES.pdf
BZX84C5V1_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 2713 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
59+7.57 грн
88+4.68 грн
136+3.02 грн
500+2.19 грн
738+1.27 грн
2029+1.20 грн
Мінімальне замовлення: 59 шт
В кошику  од. на суму  грн.
BZX84C5V1-AU_R1_000A1 BZX84C2V4-AU_SER.pdf
BZX84C5V1-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.1V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZX84C5V1W_R1_00001 BZX84C2V4W_SER.pdf
BZX84C5V1W_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
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2N7002K_R1_00001 2N7002K.pdf
2N7002K_R1_00001
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2A
Gate charge: 0.8nC
на замовлення 188 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
56+7.96 грн
109+3.78 грн
153+2.69 грн
Мінімальне замовлення: 56 шт
В кошику  од. на суму  грн.
2N7002K_R2_00001
2N7002K_R2_00001
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Case: SOT23
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002KTB_R1_00001 2N7002KTB.pdf
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 115mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Case: SOT523
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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BZX84C15W-AU_R1_000A1 BZX84C2V4W-AU_SER.pdf
BZX84C15W-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; SOT323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BAT54CW_R1_00001 BAT54W_SERIES.pdf
BAT54CW_R1_00001
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Leakage current: 2µA
на замовлення 1543 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
37+12.27 грн
78+5.29 грн
114+3.61 грн
500+2.46 грн
649+1.45 грн
Мінімальне замовлення: 37 шт
В кошику  од. на суму  грн.
BAT54C_R1_00001 BAT54_SERIES.pdf
BAT54C_R1_00001
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.225W
Features of semiconductor devices: fast switching
Leakage current: 2µA
на замовлення 1855 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
43+10.48 грн
91+4.56 грн
114+3.62 грн
130+3.17 грн
250+2.56 грн
500+2.21 грн
671+1.40 грн
1842+1.32 грн
Мінімальне замовлення: 43 шт
В кошику  од. на суму  грн.
BAT54C-AU_R1_000A1 BAT54-AU_SERIES.pdf
BAT54C-AU_R1_000A1
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Leakage current: 90µA
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BAT54CTB6_R1_00001 BAT54TB6_BAT54CTB6.pdf
BAT54CTB6_R1_00001
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT563; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT563
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. load current: 0.3A
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Leakage current: 2µA
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1N4448WS_R1_00001
1N4448WS_R1_00001
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD323
Kind of package: reel; tape
на замовлення 4490 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
23+19.47 грн
46+9.04 грн
65+6.34 грн
100+4.54 грн
250+3.17 грн
500+2.54 грн
692+1.36 грн
1901+1.28 грн
Мінімальне замовлення: 23 шт
В кошику  од. на суму  грн.
MMSZ5240B-AU_R1_000A1 MMSZ5221B-AU_SER.pdf
MMSZ5240B-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 10V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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MMSZ5240B_R1_00001 MMSZ5221B_SERIES.pdf
MMSZ5240B_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 10V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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MMSZ5240BS_R1_00001 MMSZ5221BS_SERIES.pdf
MMSZ5240BS_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 10V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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P4SMAJ24CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
P4SMAJ24CA-AU_R1_000A1
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.21 грн
137+6.90 грн
375+6.49 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BC850CW-AU_R1_000A1 BC846AW-AU_SERIES.pdf
BC850CW-AU_R1_000A1
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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BC850B-AU_R1_000A1 BC846AW_SERIES.pdf
BC850B-AU_R1_000A1
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Power dissipation: 0.33W
Application: automotive industry
Kind of package: reel; tape
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BC850B_R1_00001 BC846AW_SERIES.pdf
BC850B_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Power dissipation: 0.33W
Kind of package: reel; tape
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