Технічний опис 2SA1887F TOSHIBA
Description: TRANS PNP 50V 10A TO220NIS, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 10 A, Supplier Device Package: TO-220NIS, Frequency - Transition: 45MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції 2SA1887F
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
2SA1887(F) | Toshiba Semiconductor and Storage |
 Description: TRANS PNP 50V 10A TO220NISPower - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 10 A Supplier Device Package: TO-220NIS Frequency - Transition: 45MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
2SA1887 (F) | Toshiba | Bipolar Transistors - BJT |
товару немає в наявності |
В кошику од. на суму грн. |
| 2SA1887(F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 10A TO220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 45MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: TRANS PNP 50V 10A TO220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 45MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1887 (F) |
Виробник: Toshiba
Bipolar Transistors - BJT
Bipolar Transistors - BJT
товару немає в наявності
В кошику
од. на суму грн.