Технічний опис 2SA1887F TOSHIBA
Description: TRANS PNP 50V 10A TO220NIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V, Frequency - Transition: 45MHz, Supplier Device Package: TO-220NIS, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 2 W.
Інші пропозиції 2SA1887F
| Фото | Назва | Виробник | Інформація |
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2SA1887(F) | Виробник : Toshiba Semiconductor and Storage |
 Description: TRANS PNP 50V 10A TO220NISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V Frequency - Transition: 45MHz Supplier Device Package: TO-220NIS Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
товару немає в наявності |
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2SA1887 (F) | Виробник : Toshiba | Bipolar Transistors - BJT |
товару немає в наявності |