Технічний опис 2SC4793(F,M) Toshiba
Description: TRANS NPN 230V 1A TO-220NIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: TO-220NIS, Part Status: Obsolete, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 230 V, Power - Max: 2 W.
Інші пропозиції 2SC4793(F,M)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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2SC4793(F,M) | Виробник : Toshiba Semiconductor and Storage |
 Description: TRANS NPN 230V 1A TO-220NISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-220NIS Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 230 V Power - Max: 2 W |
товару немає в наявності |
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| 2SC4793 (F,M) | Виробник : onsemi / Fairchild | Bipolar Transistors - BJT |
товару немає в наявності |