Інші пропозиції AO3420 за ціною від 3.90 грн до 43.19 грн
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AO3420 | ALPHA&OMEGA |
N-Channel MOSFET; 20V; 12V; 55mOhm; 6A; 1,4W; -55°C ~ 150°C; AO3420 TAO3420кількість в упаковці: 3000 шт |
на замовлення 1759 шт: термін постачання 28-31 дні (днів) |
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AO3420 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 6A SOT23-3LPackaging: Tape & Reel (TR) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 |
на замовлення 618000 шт: термін постачання 21-31 дні (днів) |
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AO3420 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 5A; 0.9W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Power dissipation: 0.9W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Gate charge: 12.5nC Kind of channel: enhancement |
на замовлення 1210 шт: термін постачання 14-30 дні (днів) |
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AO3420 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 20V 6A SOT23-3LPackaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10 |
на замовлення 618227 шт: термін постачання 21-31 дні (днів) |
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| AO3420 |
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Виробник: ALPHA&OMEGA
N-Channel MOSFET; 20V; 12V; 55mOhm; 6A; 1,4W; -55°C ~ 150°C; AO3420 TAO3420
кількість в упаковці: 3000 шт
N-Channel MOSFET; 20V; 12V; 55mOhm; 6A; 1,4W; -55°C ~ 150°C; AO3420 TAO3420
кількість в упаковці: 3000 шт
на замовлення 1759 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.28 грн |
| AO3420 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 6A SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Description: MOSFET N-CH 20V 6A SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
на замовлення 618000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.92 грн |
| 9000+ | 8.29 грн |
| AO3420 |
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Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; 0.9W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; 0.9W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of channel: enhancement
на замовлення 1210 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.62 грн |
| 68+ | 6.11 грн |
| 100+ | 5.53 грн |
| 229+ | 4.13 грн |
| 629+ | 3.90 грн |
| AO3420 |
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Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 6A SOT23-3L
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Description: MOSFET N-CH 20V 6A SOT23-3L
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
на замовлення 618227 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.19 грн |
| 12+ | 25.92 грн |
| 50+ | 18.88 грн |
| 100+ | 15.57 грн |
| 500+ | 11.76 грн |




