SI2365EDS-T1-GE3

Виробник: Vishay Semiconductors
MOSFETs -20V Vds 8V Vgs SOT-23

Виробник: Vishay Siliconix
Description: MOSFET P-CH 20V 5.9A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V

Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -20A
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 36nC
On-state resistance: 32mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET