SI4276DY-T1-E3
Виробник:
на замовлення 100 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SI4276DY-T1-E3
Description: MOSFET 2N-CH 30V 8A 8SO, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 8A, Drain to Source Voltage (Vdss): 30V, Power - Max: 3.6W, 2.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SI4276DY-T1-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SI4276DY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SO Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V Power - Max: 3.6W, 2.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| SI4276DY-T1-E3 | Vishay |
MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| SI4276DY-T1-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.6W, 2.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 8A 8SO
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.6W, 2.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.