SIA447DJ-T1-GE3

Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 6 V

Виробник: Vishay
Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 T/R

Виробник: Vishay
Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 T/R

Виробник: Vishay
Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 T/R

Виробник: Vishay
Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 T/R

Виробник: Vishay
Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 T/R

Виробник: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 6 V

Виробник: Vishay Semiconductors
MOSFETs -12V Vds 8V Vgs PowerPAK SC-70

Виробник: VISHAY
Description: VISHAY - SIA447DJ-T1-GE3 - Leistungs-MOSFET, p-Kanal, 12 V, 12 A, 0.0135 ohm, PowerPAK SC-70, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 12V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 400mV
Verlustleistung: 19W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.0135ohm

Виробник: Vishay
Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 T/R