SIHF16N50C-E3

Description: MOSFET N-CH 500V 16A TO220, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220 Full Pack, Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 38W (Tc).