SQ2318AES-T1_BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 3000+ | 15.63 грн |
| 6000+ | 13.83 грн |
| 9000+ | 13.21 грн |
| 15000+ | 11.74 грн |
| 21000+ | 11.35 грн |
| 30000+ | 11.15 грн |
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Технічний опис SQ2318AES-T1_BE3 Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3W (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції SQ2318AES-T1_BE3 за ціною від 11.98 грн до 65.02 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQ2318AES-T1_BE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 40V (D-S) |
на замовлення 260923 шт: термін постачання 21-30 дні (днів) |
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SQ2318AES-T1_BE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 8A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 48297 шт: термін постачання 21-31 дні (днів) |
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| SQ2318AES-T1_BE3 |
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Виробник: Vishay / Siliconix
MOSFETs N-CHANNEL 40V (D-S)
MOSFETs N-CHANNEL 40V (D-S)
на замовлення 260923 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 53.04 грн |
| 11+ | 32.26 грн |
| 100+ | 20.65 грн |
| 500+ | 16.35 грн |
| 1000+ | 13.81 грн |
| 3000+ | 12.19 грн |
| 6000+ | 11.98 грн |
| SQ2318AES-T1_BE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 48297 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.02 грн |
| 10+ | 39.02 грн |
| 100+ | 25.30 грн |
| 500+ | 18.19 грн |
| 1000+ | 16.40 грн |