SQ4917EY-T1_BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 47.56 грн |
| 5000+ | 43.57 грн |
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Технічний опис SQ4917EY-T1_BE3 Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V, Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 5W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SQ4917EY-T1_BE3 за ціною від 43.53 грн до 164.29 грн
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SQ4917EY-T1_BE3 | Виробник : Vishay Semiconductors |
MOSFET Dual P-CHANNEL 60 V |
на замовлення 41589 шт: термін постачання 21-30 дні (днів) |
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SQ4917EY-T1_BE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 60V 8A 8SOIC Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 22307 шт: термін постачання 21-31 дні (днів) |
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