SQJ431AEP-T1_BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: P-CHANNEL 200-V (D-S) 175C MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис SQJ431AEP-T1_BE3 Vishay Siliconix
Description: VISHAY - SQJ431AEP-T1"BE3 - P-CHANNEL 200-V (D-S) 175C MOSFET 87AJ3497, tariffCode: 0, Transistormontage: Surface Mount, Drain-Source-Spannung Vds: 200V, rohsCompliant: TBA, Dauer-Drainstrom Id: 9.4A, hazardous: false, rohsPhthalatesCompliant: TBA, Qualifikation: AEC-Q101, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.5V, euEccn: NLR, Verlustleistung: 68W, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 4Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: P Channel, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.305ohm, directShipCharge: 25, SVHC: To Be Advised.
Інші пропозиції SQJ431AEP-T1_BE3 за ціною від 41.95 грн до 163.94 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQJ431AEP-T1"BE3 | VISHAY |
Description: VISHAY - SQJ431AEP-T1"BE3 - P-CHANNEL 200-V (D-S) 175C MOSFET 87AJ3497 tariffCode: 0 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 200V rohsCompliant: TBA Dauer-Drainstrom Id: 9.4A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 4Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.305ohm directShipCharge: 25 SVHC: To Be Advised |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
SQJ431AEP-T1_BE3 | Vishay Siliconix |
Description: P-CHANNEL 200-V (D-S) 175C MOSFE Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 3802 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
SQJ431AEP-T1_BE3 | Vishay Semiconductors |
MOSFETs PowerPAK SO-8L |
на замовлення 1308 шт: термін постачання 21-30 дні (днів) |
|
| SQJ431AEP-T1"BE3 |
Виробник: VISHAY
Description: VISHAY - SQJ431AEP-T1"BE3 - P-CHANNEL 200-V (D-S) 175C MOSFET 87AJ3497
tariffCode: 0
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 200V
rohsCompliant: TBA
Dauer-Drainstrom Id: 9.4A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.305ohm
directShipCharge: 25
SVHC: To Be Advised
Description: VISHAY - SQJ431AEP-T1"BE3 - P-CHANNEL 200-V (D-S) 175C MOSFET 87AJ3497
tariffCode: 0
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 200V
rohsCompliant: TBA
Dauer-Drainstrom Id: 9.4A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.305ohm
directShipCharge: 25
SVHC: To Be Advised
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 147.06 грн |
| 10+ | 94.83 грн |
| 100+ | 67.42 грн |
| 500+ | 50.97 грн |
| 1000+ | 43.26 грн |
| 2500+ | 41.95 грн |
| SQJ431AEP-T1_BE3 |
|
Виробник: Vishay Siliconix
Description: P-CHANNEL 200-V (D-S) 175C MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: P-CHANNEL 200-V (D-S) 175C MOSFE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 3802 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 158.08 грн |
| 10+ | 97.83 грн |
| 100+ | 66.69 грн |
| 500+ | 50.07 грн |
| 1000+ | 48.92 грн |
| SQJ431AEP-T1_BE3 |
|
Виробник: Vishay Semiconductors
MOSFETs PowerPAK SO-8L
MOSFETs PowerPAK SO-8L
на замовлення 1308 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 163.94 грн |
| 10+ | 105.35 грн |
| 100+ | 64.54 грн |
| 500+ | 52.49 грн |
| 1000+ | 48.29 грн |
| 3000+ | 45.46 грн |