SQJ960EP-T1_GE3 Vishay Siliconix

Description: MOSFET 2N-CH 60V 8A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 34W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V, Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.