SQJB02ELP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 27W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 31.88 грн |
| 6000+ | 28.57 грн |
| 9000+ | 27.49 грн |
| 15000+ | 24.65 грн |
| 21000+ | 24.45 грн |
Відгуки про товар
Написати відгук
Технічний опис SQJB02ELP-T1_GE3 Vishay Siliconix
Description: VISHAY - SQJB02ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 6000 µohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 30A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: PowerPAK SO-8L, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 6000µohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Zweifach n-Kanal, Verlustleistung, n-Kanal: 27W, Betriebstemperatur, max.: 175°C, SVHC: No SVHC (07-Nov-2024).
Інші пропозиції SQJB02ELP-T1_GE3 за ціною від 32.79 грн до 119.66 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SQJB02ELP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 30A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 38738 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
SQJB02ELP-T1_GE3 | VISHAY |
Description: VISHAY - SQJB02ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 6000 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: PowerPAK SO-8L Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 6000µohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 27W Betriebstemperatur, max.: 175°C SVHC: No SVHC (07-Nov-2024) |
на замовлення 2340 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
 |
SQJB02ELP-T1"GE3 | VISHAY |
Description: VISHAY - SQJB02ELP-T1"GE3 - DUAL N-CHANNEL 40-V (D-S) 175C MOSFE 42AJ0825 tariffCode: 0 euEccn: NLR rohsCompliant: TBA Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 40V SVHC: To Be Advised Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0075ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Dual N Channel Verlustleistung, n-Kanal: 27W Betriebstemperatur, max.: 175°C directShipCharge: 25 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
 |
SQJB02ELP-T1_GE3 | Vishay / Siliconix |
MOSFET DUAL N-CHANNEL 40-V (D-S) 175C MOSFE |
на замовлення 5987 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
|
|
SQJB02ELP-T1_GE3 | VISHAY |
Description: VISHAY - SQJB02ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 6000 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: PowerPAK SO-8L Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 6000µohm productTraceability: No Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 27W Betriebstemperatur, max.: 175°C SVHC: No SVHC (07-Nov-2024) |
на замовлення 2340 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SQJB02ELP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 38738 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.66 грн |
| 10+ | 72.83 грн |
| 100+ | 48.63 грн |
| 500+ | 35.91 грн |
| 1000+ | 32.79 грн |
| SQJB02ELP-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQJB02ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 6000 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: PowerPAK SO-8L
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 6000µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 27W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (07-Nov-2024)
Description: VISHAY - SQJB02ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 6000 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: PowerPAK SO-8L
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 6000µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 27W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (07-Nov-2024)
на замовлення 2340 шт:
термін постачання 21-31 дні (днів)
| SQJB02ELP-T1"GE3 |
Виробник: VISHAY
Description: VISHAY - SQJB02ELP-T1"GE3 - DUAL N-CHANNEL 40-V (D-S) 175C MOSFE 42AJ0825
tariffCode: 0
euEccn: NLR
rohsCompliant: TBA
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
SVHC: To Be Advised
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0075ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Dual N Channel
Verlustleistung, n-Kanal: 27W
Betriebstemperatur, max.: 175°C
directShipCharge: 25
Description: VISHAY - SQJB02ELP-T1"GE3 - DUAL N-CHANNEL 40-V (D-S) 175C MOSFE 42AJ0825
tariffCode: 0
euEccn: NLR
rohsCompliant: TBA
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
SVHC: To Be Advised
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0075ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Dual N Channel
Verlustleistung, n-Kanal: 27W
Betriebstemperatur, max.: 175°C
directShipCharge: 25
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| SQJB02ELP-T1_GE3 |
|
Виробник: Vishay / Siliconix
MOSFET DUAL N-CHANNEL 40-V (D-S) 175C MOSFE
MOSFET DUAL N-CHANNEL 40-V (D-S) 175C MOSFE
на замовлення 5987 шт:
термін постачання 21-30 дні (днів)
| SQJB02ELP-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQJB02ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 6000 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: PowerPAK SO-8L
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 6000µohm
productTraceability: No
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 27W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (07-Nov-2024)
Description: VISHAY - SQJB02ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 6000 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: PowerPAK SO-8L
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 6000µohm
productTraceability: No
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 27W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (07-Nov-2024)
на замовлення 2340 шт:
термін постачання 21-31 дні (днів)