SQUN700E-T1_GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: 40-V N- & P-CH COMMON DRAIN + 20
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 200V, 40V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA
Supplier Device Package: Die
Part Status: Active
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Технічний опис SQUN700E-T1_GE3 Vishay Siliconix
Description: 40-V N- & P-CH COMMON DRAIN + 20, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), P-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 50W (Tc), 48W (Tc), Drain to Source Voltage (Vdss): 200V, 40V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V, Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA, Supplier Device Package: Die, Part Status: Active.
Інші пропозиції SQUN700E-T1_GE3
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SQUN700E-T1_GE3 | Виробник : Vishay Siliconix |
Description: 40-V N- & P-CH COMMON DRAIN + 20 Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W (Tc), 48W (Tc) Drain to Source Voltage (Vdss): 200V, 40V Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA Supplier Device Package: Die Part Status: Active |
товару немає в наявності |
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| SQUN700E-T1/GE3 | Виробник : Vishay | Vishay |
товару немає в наявності |