SQUN700E-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: 40-V N- & P-CH COMMON DRAIN + 20
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc)
Drain to Source Voltage (Vdss): 200V, 40V
Power - Max: 50W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual), P-Channel
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
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Технічний опис SQUN700E-T1_GE3 Vishay Siliconix
Description: 40-V N- & P-CH COMMON DRAIN + 20, Part Status: Active, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V, Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc), Drain to Source Voltage (Vdss): 200V, 40V, Power - Max: 50W (Tc), 48W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), P-Channel, Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR).
Інші пропозиції SQUN700E-T1_GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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SQUN700E-T1_GE3 | Vishay Siliconix |
Description: 40-V N- & P-CH COMMON DRAIN + 20 Part Status: Active Supplier Device Package: Die Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc) Drain to Source Voltage (Vdss): 200V, 40V Power - Max: 50W (Tc), 48W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual), P-Channel Mounting Type: Surface Mount Package / Case: Die Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| SQUN700E-T1/GE3 | Vishay | Vishay |
товару немає в наявності |
В кошику од. на суму грн. |
| SQUN700E-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: 40-V N- & P-CH COMMON DRAIN + 20
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc)
Drain to Source Voltage (Vdss): 200V, 40V
Power - Max: 50W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual), P-Channel
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Description: 40-V N- & P-CH COMMON DRAIN + 20
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc)
Drain to Source Voltage (Vdss): 200V, 40V
Power - Max: 50W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual), P-Channel
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.