SUD45P03-15-E3
Виробник:
на замовлення 200000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SUD45P03-15-E3
Description: MOSFET P-CH 30V TO252, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Power Dissipation (Max): 4W (Ta), 70W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції SUD45P03-15-E3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SUD45P03-15-E3 | Vishay Siliconix |
Description: MOSFET P-CH 30V TO252 Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Power Dissipation (Max): 4W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| SUD45P03-15-E3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V TO252
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 4W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V TO252
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 4W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.