TPC8109(TE12L

Description: MOSFET P-CH 30V 10A 8-SOP, Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Part Status: Obsolete, Supplier Device Package: 8-SOP (5.5x6.0), Vgs(th) (Max) @ Id: 2V @ 1mA, Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.173", 4.40mm Width), Packaging: Cut Tape (CT).