Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102219) > Сторінка 1075 з 1704

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RH7G04DBKFRATCB RH7G04DBKFRATCB Rohm Semiconductor datasheet?p=RH7G04DBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+33.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04DBKFRATCB RH7G04DBKFRATCB Rohm Semiconductor datasheet?p=RH7G04DBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+124.29 грн
10+75.93 грн
100+50.84 грн
500+37.63 грн
1000+34.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04CBJFRATCB RH7G04CBJFRATCB Rohm Semiconductor datasheet?p=RH7G04CBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7G04CBJFRATCB RH7G04CBJFRATCB Rohm Semiconductor datasheet?p=RH7G04CBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
3+144.44 грн
10+88.87 грн
100+59.98 грн
500+44.69 грн
1000+41.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7L04CBKFRATCB RH7L04CBKFRATCB Rohm Semiconductor datasheet?p=RH7L04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7L04CBKFRATCB RH7L04CBKFRATCB Rohm Semiconductor datasheet?p=RH7L04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
3+149.48 грн
10+91.87 грн
100+62.12 грн
500+46.36 грн
1000+43.83 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04CBKFRATCB RH7G04CBKFRATCB Rohm Semiconductor datasheet?p=RH7G04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+42.56 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04CBKFRATCB RH7G04CBKFRATCB Rohm Semiconductor datasheet?p=RH7G04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+152.00 грн
10+93.56 грн
100+63.36 грн
500+47.32 грн
1000+44.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7L04CBLFRATCB RH7L04CBLFRATCB Rohm Semiconductor datasheet?p=RH7L04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7L04CBLFRATCB RH7L04CBLFRATCB Rohm Semiconductor datasheet?p=RH7L04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
3+152.84 грн
10+94.37 грн
100+63.93 грн
500+47.76 грн
1000+45.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04CBLFRATCB RH7G04CBLFRATCB Rohm Semiconductor datasheet?p=RH7G04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7G04CBLFRATCB RH7G04CBLFRATCB Rohm Semiconductor datasheet?p=RH7G04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
3+152.84 грн
10+94.21 грн
100+63.81 грн
500+47.67 грн
1000+45.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7E04BBJFRATCB RH7E04BBJFRATCB Rohm Semiconductor datasheet?p=RH7E04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+45.34 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7E04BBJFRATCB RH7E04BBJFRATCB Rohm Semiconductor datasheet?p=RH7E04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+160.40 грн
10+98.90 грн
100+67.15 грн
500+50.27 грн
1000+48.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04BBJFRATCB RH7G04BBJFRATCB Rohm Semiconductor datasheet?p=RH7G04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+45.74 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04BBJFRATCB RH7G04BBJFRATCB Rohm Semiconductor datasheet?p=RH7G04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+162.08 грн
10+99.63 грн
100+67.70 грн
500+50.70 грн
1000+48.84 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04BBKFRATCB RH7G04BBKFRATCB Rohm Semiconductor datasheet?p=RH7G04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+47.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04BBKFRATCB RH7G04BBKFRATCB Rohm Semiconductor datasheet?p=RH7G04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+166.28 грн
10+102.38 грн
100+69.68 грн
500+52.25 грн
1000+50.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7L04BBKFRATCB RH7L04BBKFRATCB Rohm Semiconductor datasheet?p=RH7L04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+49.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7L04BBKFRATCB RH7L04BBKFRATCB Rohm Semiconductor datasheet?p=RH7L04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+172.15 грн
10+106.26 грн
100+72.42 грн
500+54.39 грн
1000+53.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RH7L04BBLFRATCB RH7L04BBLFRATCB Rohm Semiconductor rh7l04bblfratcb-e.pdf Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+49.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7L04BBLFRATCB RH7L04BBLFRATCB Rohm Semiconductor rh7l04bblfratcb-e.pdf Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+172.15 грн
10+106.26 грн
100+72.42 грн
500+54.39 грн
1000+53.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RQ3N060ATTB1 RQ3N060ATTB1 Rohm Semiconductor rq3n060attb1-e.pdf Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
товару немає в наявності
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RQ3N060ATTB1 RQ3N060ATTB1 Rohm Semiconductor rq3n060attb1-e.pdf Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
3+146.12 грн
10+90.25 грн
100+61.00 грн
500+45.48 грн
1000+42.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCR01SMQPJ000 MCR01SMQPJ000 Rohm Semiconductor datasheet?p=MCR01SMQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
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MCR01SMQPJ000 MCR01SMQPJ000 Rohm Semiconductor datasheet?p=MCR01SMQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
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BD7LS07G-CTL BD7LS07G-CTL Rohm Semiconductor datasheet?p=BD7LS07G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC BUFFER NON-INVERT 5.5V 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
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BD7LS07G-CTL BD7LS07G-CTL Rohm Semiconductor datasheet?p=BD7LS07G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC BUFFER NON-INVERT 5.5V 5-SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 518 шт:
термін постачання 21-31 дні (днів)
12+29.39 грн
17+19.57 грн
25+17.44 грн
100+14.16 грн
250+13.11 грн
500+12.47 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SDR10EZPF22R0 SDR10EZPF22R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22 Ohms
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SDR10EZPF22R0 SDR10EZPF22R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22 Ohms
на замовлення 5200 шт:
термін постачання 21-31 дні (днів)
22+15.96 грн
40+8.09 грн
50+6.47 грн
59+5.16 грн
100+4.49 грн
250+3.79 грн
500+3.39 грн
1000+3.02 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
LTR100JZPF16R0 LTR100JZPF16R0 Rohm Semiconductor ltr-e.pdf Description: RES SMD 16 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 16 Ohms
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LTR100JZPF16R0 LTR100JZPF16R0 Rohm Semiconductor ltr-e.pdf Description: RES SMD 16 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 16 Ohms
на замовлення 3862 шт:
термін постачання 21-31 дні (днів)
8+45.35 грн
13+26.04 грн
25+22.06 грн
50+18.53 грн
100+16.82 грн
250+15.08 грн
500+13.85 грн
1000+13.06 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
LTR100JZPF2703 LTR100JZPF2703 Rohm Semiconductor ltr-e.pdf Description: RES SMD 270K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 270 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+12.51 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
LTR100JZPF2703 LTR100JZPF2703 Rohm Semiconductor ltr-e.pdf Description: RES SMD 270K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 270 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
8+45.35 грн
13+26.04 грн
25+22.06 грн
50+18.53 грн
100+16.82 грн
250+15.08 грн
500+14.11 грн
1000+13.06 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SFR18EZPJ102 SFR18EZPJ102 Rohm Semiconductor sfr-e.pdf Description: RES 1K OHM 5% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1 kOhms
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SFR18EZPJ102 SFR18EZPJ102 Rohm Semiconductor sfr-e.pdf Description: RES 1K OHM 5% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1 kOhms
на замовлення 4978 шт:
термін постачання 21-31 дні (днів)
27+12.60 грн
56+5.82 грн
71+4.56 грн
85+3.60 грн
100+3.07 грн
250+2.55 грн
500+2.21 грн
1000+1.98 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
CSL0901MT1 CSL0901MT1 Rohm Semiconductor CSL0901MT1.pdf Description: LED YLW-GRN CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 571nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
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CSL0901MT1 CSL0901MT1 Rohm Semiconductor CSL0901MT1.pdf Description: LED YLW-GRN CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 571nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
на замовлення 895 шт:
термін постачання 21-31 дні (днів)
10+33.59 грн
15+22.16 грн
100+15.83 грн
500+12.19 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
CSL0902ET1 CSL0902ET1 Rohm Semiconductor datasheet?p=CSL0902ET&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 1100mcd
Voltage - Forward (Vf) (Typ): 3.4V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 527nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
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CSL0902ET1 CSL0902ET1 Rohm Semiconductor datasheet?p=CSL0902ET&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED GREEN CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 1100mcd
Voltage - Forward (Vf) (Typ): 3.4V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 527nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
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SDR03EZPJ150 SDR03EZPJ150 Rohm Semiconductor sdr-e.pdf Description: RES SMD 15 OHM 5% 0.3W 0603
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15 Ohms
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SDR03EZPJ150 SDR03EZPJ150 Rohm Semiconductor sdr-e.pdf Description: RES SMD 15 OHM 5% 0.3W 0603
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15 Ohms
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MCR18SEQPJ000 MCR18SEQPJ000 Rohm Semiconductor datasheet?p=MCR18SEQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 3216(1206)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 0 Ohms
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MCR18SEQPJ000 MCR18SEQPJ000 Rohm Semiconductor datasheet?p=MCR18SEQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 3216(1206)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 0 Ohms
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RSDT27BMFHTL RSDT27BMFHTL Rohm Semiconductor datasheet?p=RSDT27BMFH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TVS DIODE 22VWM TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: TO-252
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+64.10 грн
Мінімальне замовлення: 2500
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RSDT27BMFHTL RSDT27BMFHTL Rohm Semiconductor datasheet?p=RSDT27BMFH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TVS DIODE 22VWM TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: TO-252
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+211.62 грн
10+114.51 грн
100+91.23 грн
500+70.90 грн
Мінімальне замовлення: 2
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BU90023NUX-TR BU90023NUX-TR Rohm Semiconductor datasheet?p=BU90023NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK 1.23V 1.5A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VSON008X2030
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.3V
Voltage - Output (Min/Fixed): 1.23V
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BU90023NUX-TR BU90023NUX-TR Rohm Semiconductor datasheet?p=BU90023NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG BUCK 1.23V 1.5A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VSON008X2030
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.3V
Voltage - Output (Min/Fixed): 1.23V
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ESR18EZPF6800 ESR18EZPF6800 Rohm Semiconductor esr-e.pdf Description: RES 680 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 680 Ohms
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ESR18EZPF6800 ESR18EZPF6800 Rohm Semiconductor esr-e.pdf Description: RES 680 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 680 Ohms
на замовлення 1613 шт:
термін постачання 21-31 дні (днів)
27+12.60 грн
56+5.82 грн
71+4.56 грн
85+3.60 грн
100+3.07 грн
250+2.55 грн
500+2.18 грн
1000+1.98 грн
Мінімальне замовлення: 27
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ESR10EZPF6800 ESR10EZPF6800 Rohm Semiconductor esr-e.pdf Description: RES 680 OHM 1% 1/2W 0805
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 680 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+2.04 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ESR10EZPF6800 ESR10EZPF6800 Rohm Semiconductor esr-e.pdf Description: RES 680 OHM 1% 1/2W 0805
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 680 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
25+13.44 грн
51+6.39 грн
65+5.01 грн
77+3.96 грн
100+3.40 грн
250+2.84 грн
500+2.47 грн
1000+2.22 грн
Мінімальне замовлення: 25
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EMH25FHAT2R EMH25FHAT2R Rohm Semiconductor SiC_SCS_AECQ.pdf Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMH25FHAT2R EMH25FHAT2R Rohm Semiconductor SiC_SCS_AECQ.pdf Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMH10FHAT2R EMH10FHAT2R Rohm Semiconductor EMT6_Marking.pdf Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMH10FHAT2R EMH10FHAT2R Rohm Semiconductor EMT6_Marking.pdf Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMH2FHAT2R EMH2FHAT2R Rohm Semiconductor emh2fha-e.pdf Description: TRANS PREBIAS 2NPN 50V EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMH2FHAT2R EMH2FHAT2R Rohm Semiconductor emh2fha-e.pdf Description: TRANS PREBIAS 2NPN 50V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMH4FHAT2R EMH4FHAT2R Rohm Semiconductor emh4fha-e.pdf Description: TRANS PREBIAS 2NPN 50V EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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LA-401VN LA-401VN Rohm Semiconductor datasheet?p=LA-401VN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DISPLAY 7-SEG 0.4" SGL RED 10DIP
Packaging: Bulk
Package / Case: 10-DIP (0.300", 7.62mm)
Color: Red
Display Type: 7-Segment
Size / Dimension: 0.512" H x 0.378" W x 0.276" D (13.00mm x 9.60mm x 7.00mm)
Number of Characters: 1
Millicandela Rating: 16mcd
Common Pin: Common Cathode
Digit/Alpha Size: 0.40" (10.16mm)
Voltage - Forward (Vf) (Typ): 2V
Current - Test: 10mA
Wavelength - Peak: 650nm
Power Dissipation (Max): 40mW
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
2+230.94 грн
10+162.06 грн
Мінімальне замовлення: 2
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RH7G04DBKFRATCB datasheet?p=RH7G04DBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04DBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+33.50 грн
Мінімальне замовлення: 3000
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RH7G04DBKFRATCB datasheet?p=RH7G04DBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04DBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.29 грн
10+75.93 грн
100+50.84 грн
500+37.63 грн
1000+34.39 грн
Мінімальне замовлення: 3
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RH7G04CBJFRATCB datasheet?p=RH7G04CBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBJFRATCB
Виробник: Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
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RH7G04CBJFRATCB datasheet?p=RH7G04CBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBJFRATCB
Виробник: Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.44 грн
10+88.87 грн
100+59.98 грн
500+44.69 грн
1000+41.92 грн
Мінімальне замовлення: 3
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RH7L04CBKFRATCB datasheet?p=RH7L04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04CBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
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RH7L04CBKFRATCB datasheet?p=RH7L04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04CBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.48 грн
10+91.87 грн
100+62.12 грн
500+46.36 грн
1000+43.83 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04CBKFRATCB datasheet?p=RH7G04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+42.56 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04CBKFRATCB datasheet?p=RH7G04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+152.00 грн
10+93.56 грн
100+63.36 грн
500+47.32 грн
1000+44.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7L04CBLFRATCB datasheet?p=RH7L04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04CBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7L04CBLFRATCB datasheet?p=RH7L04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04CBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+152.84 грн
10+94.37 грн
100+63.93 грн
500+47.76 грн
1000+45.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04CBLFRATCB datasheet?p=RH7G04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7G04CBLFRATCB datasheet?p=RH7G04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+152.84 грн
10+94.21 грн
100+63.81 грн
500+47.67 грн
1000+45.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7E04BBJFRATCB datasheet?p=RH7E04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7E04BBJFRATCB
Виробник: Rohm Semiconductor
Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+45.34 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7E04BBJFRATCB datasheet?p=RH7E04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7E04BBJFRATCB
Виробник: Rohm Semiconductor
Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+160.40 грн
10+98.90 грн
100+67.15 грн
500+50.27 грн
1000+48.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04BBJFRATCB datasheet?p=RH7G04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04BBJFRATCB
Виробник: Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+45.74 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04BBJFRATCB datasheet?p=RH7G04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04BBJFRATCB
Виробник: Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+162.08 грн
10+99.63 грн
100+67.70 грн
500+50.70 грн
1000+48.84 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04BBKFRATCB datasheet?p=RH7G04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04BBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+47.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04BBKFRATCB datasheet?p=RH7G04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04BBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+166.28 грн
10+102.38 грн
100+69.68 грн
500+52.25 грн
1000+50.65 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7L04BBKFRATCB datasheet?p=RH7L04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04BBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+49.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7L04BBKFRATCB datasheet?p=RH7L04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04BBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+172.15 грн
10+106.26 грн
100+72.42 грн
500+54.39 грн
1000+53.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RH7L04BBLFRATCB rh7l04bblfratcb-e.pdf
RH7L04BBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+49.22 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7L04BBLFRATCB rh7l04bblfratcb-e.pdf
RH7L04BBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+172.15 грн
10+106.26 грн
100+72.42 грн
500+54.39 грн
1000+53.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RQ3N060ATTB1 rq3n060attb1-e.pdf
RQ3N060ATTB1
Виробник: Rohm Semiconductor
Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
RQ3N060ATTB1 rq3n060attb1-e.pdf
RQ3N060ATTB1
Виробник: Rohm Semiconductor
Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.12 грн
10+90.25 грн
100+61.00 грн
500+45.48 грн
1000+42.82 грн
Мінімальне замовлення: 3
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MCR01SMQPJ000 datasheet?p=MCR01SMQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPJ000
Виробник: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
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MCR01SMQPJ000 datasheet?p=MCR01SMQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPJ000
Виробник: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
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BD7LS07G-CTL datasheet?p=BD7LS07G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7LS07G-CTL
Виробник: Rohm Semiconductor
Description: IC BUFFER NON-INVERT 5.5V 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
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BD7LS07G-CTL datasheet?p=BD7LS07G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7LS07G-CTL
Виробник: Rohm Semiconductor
Description: IC BUFFER NON-INVERT 5.5V 5-SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 518 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.39 грн
17+19.57 грн
25+17.44 грн
100+14.16 грн
250+13.11 грн
500+12.47 грн
Мінімальне замовлення: 12
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SDR10EZPF22R0 sdr-e.pdf
SDR10EZPF22R0
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22 Ohms
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SDR10EZPF22R0 sdr-e.pdf
SDR10EZPF22R0
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.667W, 2/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 22 Ohms
на замовлення 5200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+15.96 грн
40+8.09 грн
50+6.47 грн
59+5.16 грн
100+4.49 грн
250+3.79 грн
500+3.39 грн
1000+3.02 грн
Мінімальне замовлення: 22
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LTR100JZPF16R0 ltr-e.pdf
LTR100JZPF16R0
Виробник: Rohm Semiconductor
Description: RES SMD 16 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 16 Ohms
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LTR100JZPF16R0 ltr-e.pdf
LTR100JZPF16R0
Виробник: Rohm Semiconductor
Description: RES SMD 16 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 16 Ohms
на замовлення 3862 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.35 грн
13+26.04 грн
25+22.06 грн
50+18.53 грн
100+16.82 грн
250+15.08 грн
500+13.85 грн
1000+13.06 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
LTR100JZPF2703 ltr-e.pdf
LTR100JZPF2703
Виробник: Rohm Semiconductor
Description: RES SMD 270K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 270 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+12.51 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
LTR100JZPF2703 ltr-e.pdf
LTR100JZPF2703
Виробник: Rohm Semiconductor
Description: RES SMD 270K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 270 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.35 грн
13+26.04 грн
25+22.06 грн
50+18.53 грн
100+16.82 грн
250+15.08 грн
500+14.11 грн
1000+13.06 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SFR18EZPJ102 sfr-e.pdf
SFR18EZPJ102
Виробник: Rohm Semiconductor
Description: RES 1K OHM 5% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1 kOhms
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SFR18EZPJ102 sfr-e.pdf
SFR18EZPJ102
Виробник: Rohm Semiconductor
Description: RES 1K OHM 5% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1 kOhms
на замовлення 4978 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.60 грн
56+5.82 грн
71+4.56 грн
85+3.60 грн
100+3.07 грн
250+2.55 грн
500+2.21 грн
1000+1.98 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
CSL0901MT1 CSL0901MT1.pdf
CSL0901MT1
Виробник: Rohm Semiconductor
Description: LED YLW-GRN CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 571nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
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CSL0901MT1 CSL0901MT1.pdf
CSL0901MT1
Виробник: Rohm Semiconductor
Description: LED YLW-GRN CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Yellow-Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 100mcd
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 571nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
на замовлення 895 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.59 грн
15+22.16 грн
100+15.83 грн
500+12.19 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
CSL0902ET1 datasheet?p=CSL0902ET&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902ET1
Виробник: Rohm Semiconductor
Description: LED GREEN CLEAR 0603 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 1100mcd
Voltage - Forward (Vf) (Typ): 3.4V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 527nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
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CSL0902ET1 datasheet?p=CSL0902ET&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
CSL0902ET1
Виробник: Rohm Semiconductor
Description: LED GREEN CLEAR 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 1100mcd
Voltage - Forward (Vf) (Typ): 3.4V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 1.34mm
Wavelength - Dominant: 527nm
Supplier Device Package: 0603
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.14mm Dia
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SDR03EZPJ150 sdr-e.pdf
SDR03EZPJ150
Виробник: Rohm Semiconductor
Description: RES SMD 15 OHM 5% 0.3W 0603
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15 Ohms
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SDR03EZPJ150 sdr-e.pdf
SDR03EZPJ150
Виробник: Rohm Semiconductor
Description: RES SMD 15 OHM 5% 0.3W 0603
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 15 Ohms
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MCR18SEQPJ000 datasheet?p=MCR18SEQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR18SEQPJ000
Виробник: Rohm Semiconductor
Description: 3216(1206)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 0 Ohms
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MCR18SEQPJ000 datasheet?p=MCR18SEQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR18SEQPJ000
Виробник: Rohm Semiconductor
Description: 3216(1206)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 0 Ohms
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RSDT27BMFHTL datasheet?p=RSDT27BMFH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RSDT27BMFHTL
Виробник: Rohm Semiconductor
Description: TVS DIODE 22VWM TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: TO-252
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+64.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RSDT27BMFHTL datasheet?p=RSDT27BMFH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RSDT27BMFHTL
Виробник: Rohm Semiconductor
Description: TVS DIODE 22VWM TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: TO-252
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24V
Power - Peak Pulse: 2500W (2.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+211.62 грн
10+114.51 грн
100+91.23 грн
500+70.90 грн
Мінімальне замовлення: 2
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BU90023NUX-TR datasheet?p=BU90023NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU90023NUX-TR
Виробник: Rohm Semiconductor
Description: IC REG BUCK 1.23V 1.5A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VSON008X2030
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.3V
Voltage - Output (Min/Fixed): 1.23V
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BU90023NUX-TR datasheet?p=BU90023NUX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU90023NUX-TR
Виробник: Rohm Semiconductor
Description: IC REG BUCK 1.23V 1.5A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: VSON008X2030
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.3V
Voltage - Output (Min/Fixed): 1.23V
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ESR18EZPF6800 esr-e.pdf
ESR18EZPF6800
Виробник: Rohm Semiconductor
Description: RES 680 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 680 Ohms
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ESR18EZPF6800 esr-e.pdf
ESR18EZPF6800
Виробник: Rohm Semiconductor
Description: RES 680 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 680 Ohms
на замовлення 1613 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.60 грн
56+5.82 грн
71+4.56 грн
85+3.60 грн
100+3.07 грн
250+2.55 грн
500+2.18 грн
1000+1.98 грн
Мінімальне замовлення: 27
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ESR10EZPF6800 esr-e.pdf
ESR10EZPF6800
Виробник: Rohm Semiconductor
Description: RES 680 OHM 1% 1/2W 0805
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 680 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+2.04 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ESR10EZPF6800 esr-e.pdf
ESR10EZPF6800
Виробник: Rohm Semiconductor
Description: RES 680 OHM 1% 1/2W 0805
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 680 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.44 грн
51+6.39 грн
65+5.01 грн
77+3.96 грн
100+3.40 грн
250+2.84 грн
500+2.47 грн
1000+2.22 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
EMH25FHAT2R SiC_SCS_AECQ.pdf
EMH25FHAT2R
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMH25FHAT2R SiC_SCS_AECQ.pdf
EMH25FHAT2R
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMH10FHAT2R EMT6_Marking.pdf
EMH10FHAT2R
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
EMH10FHAT2R EMT6_Marking.pdf
EMH10FHAT2R
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 100MA EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMH2FHAT2R emh2fha-e.pdf
EMH2FHAT2R
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMH2FHAT2R emh2fha-e.pdf
EMH2FHAT2R
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMH4FHAT2R emh4fha-e.pdf
EMH4FHAT2R
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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LA-401VN datasheet?p=LA-401VN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
LA-401VN
Виробник: Rohm Semiconductor
Description: DISPLAY 7-SEG 0.4" SGL RED 10DIP
Packaging: Bulk
Package / Case: 10-DIP (0.300", 7.62mm)
Color: Red
Display Type: 7-Segment
Size / Dimension: 0.512" H x 0.378" W x 0.276" D (13.00mm x 9.60mm x 7.00mm)
Number of Characters: 1
Millicandela Rating: 16mcd
Common Pin: Common Cathode
Digit/Alpha Size: 0.40" (10.16mm)
Voltage - Forward (Vf) (Typ): 2V
Current - Test: 10mA
Wavelength - Peak: 650nm
Power Dissipation (Max): 40mW
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+230.94 грн
10+162.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
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