Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103042) > Сторінка 1074 з 1718
| Фото | Назва | Виробник | Інформація |
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SFR18EZPF1201 | Rohm Semiconductor |
Description: RES 1.2K OHM 1% 1/4W 1206Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 1.2 kOhms |
на замовлення 3885 шт: термін постачання 21-31 дні (днів) |
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DTC143ZMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1R2 LEAK ABSORPTIPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DTC143ZMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1R2 LEAK ABSORPTIPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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BD9615MUV-EVK-002 | Rohm Semiconductor |
Description: EVAL BOARD FOR BD9615Packaging: Bulk Voltage - Output: 24V Voltage - Input: 8V ~ 18V Current - Output: 2A Contents: Board(s) Frequency - Switching: 416kHz Regulator Topology: Boost Utilized IC / Part: BD9615 Main Purpose: DC/DC, Step Up Outputs and Type: 1 Non-Isolated Output |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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RF7G120BJFRATCR | Rohm Semiconductor |
Description: PCH -40V -12A, DFN2020Y8LSAA, POPackaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 10V Power Dissipation (Max): 23W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 279µA Supplier Device Package: DFN2020Y8LSAA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RF7G120BJFRATCR | Rohm Semiconductor |
Description: PCH -40V -12A, DFN2020Y8LSAA, POPackaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 10V Power Dissipation (Max): 23W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 279µA Supplier Device Package: DFN2020Y8LSAA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 605 шт: термін постачання 21-31 дні (днів) |
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AG142FGS4FRATCB | Rohm Semiconductor |
Description: NCH 40V 120A, HPLF5060T5LSAH, POPackaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 408µA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AG142FGS4FRATCB | Rohm Semiconductor |
Description: NCH 40V 120A, HPLF5060T5LSAH, POPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 408µA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AG052FPS4FRATCB | Rohm Semiconductor |
Description: NCH 100V 58A, HPLF5060T5LSAH, POPackaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1.6mA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AG052FPS4FRATCB | Rohm Semiconductor |
Description: NCH 100V 58A, HPLF5060T5LSAH, POPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1.6mA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 2855 шт: термін постачання 21-31 дні (днів) |
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AG140FGS4FRATCB | Rohm Semiconductor |
Description: NCH 40V 120A, HPLF5060T5LSAH, POPackaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.6mA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AG140FGS4FRATCB | Rohm Semiconductor |
Description: NCH 40V 120A, HPLF5060T5LSAH, POPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.6mA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 1985 шт: термін постачання 21-31 дні (днів) |
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AG045FLS4FRATCB | Rohm Semiconductor |
Description: NCH 60V 120A, HPLF5060T5LSAH, POPackaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1.9mA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AG045FLS4FRATCB | Rohm Semiconductor |
Description: NCH 60V 120A, HPLF5060T5LSAH, POPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1.9mA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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AG040FGS4FRATCB | Rohm Semiconductor |
Description: NCH 40V 120A, HPLF5060T5LSAH, POPackaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 4.2mA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AG040FGS4FRATCB | Rohm Semiconductor |
Description: NCH 40V 120A, HPLF5060T5LSAH, POPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 4.2mA Supplier Device Package: HPLF5060T5LSAH Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 2353 шт: термін постачання 21-31 дні (днів) |
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BH7881EFV-E2 | Rohm Semiconductor |
Description: IC AMP CLASS AB STER 2W 24HTSSOPPackaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Output Type: 2-Channel (Stereo) with Stereo Headphones Mounting Type: Surface Mount Type: Class AB Operating Temperature: -10°C ~ 70°C (TA) Voltage - Supply: 3.3V ~ 5.5V Max Output Power x Channels @ Load: 2W x 2 @ 4Ohm Supplier Device Package: 24-HTSSOP-B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MCH155A010CK | Rohm Semiconductor |
Description: CAP CER 1PF 50V C0G/NP0 0402Tolerance: ±0.25pF Packaging: Tape & Reel (TR) Voltage - Rated: 50V Package / Case: 0402 (1005 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.022" (0.55mm) Capacitance: 1 pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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DTC123EMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1=R2 POTENTIAL DIPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Frequency - Transition: 250MHz Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DTC123EMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1=R2 POTENTIAL DIPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Frequency - Transition: 250MHz Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DTC123JMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1R2 LEAK ABSORPTIPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DTC123JMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1R2 LEAK ABSORPTIPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPF3902 | Rohm Semiconductor |
Description: RES SMD 39K OHM 1% 1/16W 0402Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 39 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SFR01MZPF3902 | Rohm Semiconductor |
Description: RES SMD 39K OHM 1% 1/16W 0402Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 39 kOhms |
на замовлення 7793 шт: термін постачання 21-31 дні (днів) |
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LTR100JZPJ330 | Rohm Semiconductor |
Description: RES SMD 33 OHM 5% 3W 2512 WIDEPower (Watts): 3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 33 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LTR100JZPJ330 | Rohm Semiconductor |
Description: RES SMD 33 OHM 5% 3W 2512 WIDEPower (Watts): 3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 33 Ohms |
на замовлення 2385 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ470 | Rohm Semiconductor |
Description: RES 47 OHM 5% 1/2W 0805Power (Watts): 0.667W, 2/3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 47 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SDR10EZPJ470 | Rohm Semiconductor |
Description: RES 47 OHM 5% 1/2W 0805Power (Watts): 0.667W, 2/3W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 47 Ohms |
на замовлення 4760 шт: термін постачання 21-31 дні (днів) |
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ESR18EZPF24R0 | Rohm Semiconductor |
Description: RES 24 OHM 1% 3/4W 1206Power (Watts): 0.75W, 3/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 24 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESR18EZPF24R0 | Rohm Semiconductor |
Description: RES 24 OHM 1% 3/4W 1206Power (Watts): 0.75W, 3/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 24 Ohms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPF3902 | Rohm Semiconductor |
Description: RES 39K OHM 1% 1/4W 1206Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 39 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPF3902 | Rohm Semiconductor |
Description: RES 39K OHM 1% 1/4W 1206Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 39 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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ESR01MZPF6203 | Rohm Semiconductor |
Description: RES 620K OHM 1% 1/5W 0402Power (Watts): 0.2W, 1/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 620 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESR01MZPF6203 | Rohm Semiconductor |
Description: RES 620K OHM 1% 1/5W 0402Power (Watts): 0.2W, 1/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 620 kOhms |
на замовлення 8790 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ624 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSPower (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 620 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SFR01MZPJ624 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSPower (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 620 kOhms |
на замовлення 9980 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPF6202 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSPower (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 62 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SFR01MZPF6202 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSPower (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 62 kOhms |
на замовлення 9966 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPF6201 | Rohm Semiconductor |
Description: RES 6.2K OHM 1% 1/16W 0402Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 6.2 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SFR01MZPF6201 | Rohm Semiconductor |
Description: RES 6.2K OHM 1% 1/16W 0402Power (Watts): 0.063W, 1/16W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 6.2 kOhms |
на замовлення 9876 шт: термін постачання 21-31 дні (днів) |
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ESR01MZPF6202 | Rohm Semiconductor |
Description: RES 62K OHM 1% 1/5W 0402Power (Watts): 0.2W, 1/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 62 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESR01MZPF6202 | Rohm Semiconductor |
Description: RES 62K OHM 1% 1/5W 0402Power (Watts): 0.2W, 1/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 62 kOhms |
на замовлення 9980 шт: термін постачання 21-31 дні (днів) |
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ESR01MZPF6201 | Rohm Semiconductor |
Description: RES 6.2K OHM 1% 1/5W 0402Power (Watts): 0.2W, 1/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 6.2 kOhms |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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ESR01MZPF6201 | Rohm Semiconductor |
Description: RES 6.2K OHM 1% 1/5W 0402Power (Watts): 0.2W, 1/5W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 6.2 kOhms |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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DTA013ZUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V UMT3FPackaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA013ZUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BM65374S-VC | Rohm Semiconductor |
Description: 600V MOSFET (PRESTOMOS) INTELLIG Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BM65374S-VA | Rohm Semiconductor |
Description: 600V MOSFET (PRESTOMOS) INTELLIG Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BM65375S-VA | Rohm Semiconductor |
Description: 600V MOSFET (PRESTOMOS) INTELLIG Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BM65375S-VC | Rohm Semiconductor |
Description: 600V MOSFET (PRESTOMOS) INTELLIG Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PBZLTBR1130 | Rohm Semiconductor |
Description: 1000MW, 102V, DO-214AA(SMB), ZENTolerance: ±6.15% Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 130 V Impedance (Max) (Zzt): 1100 Ohms Supplier Device Package: SMBP Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 102 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PBZLTBR1130 | Rohm Semiconductor |
Description: 1000MW, 102V, DO-214AA(SMB), ZENTolerance: ±6.15% Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 130 V Impedance (Max) (Zzt): 1100 Ohms Supplier Device Package: SMBP Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 102 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC143EMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1=R2 POTENTIAL DIPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DTC143EMHZGT2L | Rohm Semiconductor |
Description: NPN, SOT-723, R1=R2 POTENTIAL DIPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: VMT3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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DTC114TUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC114TUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RV7L020GNTCR1 | Rohm Semiconductor |
Description: NCH 60V 2A MIDDLE POWER MOSFET :Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 50µA Supplier Device Package: DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RV7L020GNTCR1 | Rohm Semiconductor |
Description: NCH 60V 2A MIDDLE POWER MOSFET :Packaging: Cut Tape (CT) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 50µA Supplier Device Package: DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V |
на замовлення 1850 шт: термін постачання 21-31 дні (днів) |
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LM2902EYFV-CE2 | Rohm Semiconductor |
Description: EMARMOUR, AUTOMOTIVE EXCEPackaging: Tape & Reel (TR) Package / Case: 14-LSSOP (0.173", 4.40mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 150°C Current - Supply: 250µA (x4 Channels) Slew Rate: 0.2V/µs Gain Bandwidth Product: 500 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SSOPB Grade: Automotive Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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LM2902EYFV-CE2 | Rohm Semiconductor |
Description: EMARMOUR, AUTOMOTIVE EXCEPackaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.173", 4.40mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 150°C Current - Supply: 250µA (x4 Channels) Slew Rate: 0.2V/µs Gain Bandwidth Product: 500 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SSOPB Grade: Automotive Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
на замовлення 1930 шт: термін постачання 21-31 дні (днів) |
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| SFR18EZPF1201 |
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Виробник: Rohm Semiconductor
Description: RES 1.2K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 kOhms
Description: RES 1.2K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.2 kOhms
на замовлення 3885 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.08 грн |
| 44+ | 6.93 грн |
| 55+ | 5.51 грн |
| 64+ | 4.43 грн |
| 100+ | 3.82 грн |
| 250+ | 3.22 грн |
| 500+ | 2.88 грн |
| 1000+ | 2.56 грн |
| DTC143ZMHZGT2L |
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Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 2.89 грн |
| DTC143ZMHZGT2L |
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Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.82 грн |
| 58+ | 5.27 грн |
| 66+ | 4.58 грн |
| 100+ | 3.61 грн |
| 250+ | 3.29 грн |
| 500+ | 3.10 грн |
| 1000+ | 2.89 грн |
| 2500+ | 2.72 грн |
| BD9615MUV-EVK-002 |
![]() |
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD9615
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 8V ~ 18V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 416kHz
Regulator Topology: Boost
Utilized IC / Part: BD9615
Main Purpose: DC/DC, Step Up
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR BD9615
Packaging: Bulk
Voltage - Output: 24V
Voltage - Input: 8V ~ 18V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 416kHz
Regulator Topology: Boost
Utilized IC / Part: BD9615
Main Purpose: DC/DC, Step Up
Outputs and Type: 1 Non-Isolated Output
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9033.86 грн |
| RF7G120BJFRATCR |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -40V -12A, DFN2020Y8LSAA, PO
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 279µA
Supplier Device Package: DFN2020Y8LSAA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
Description: PCH -40V -12A, DFN2020Y8LSAA, PO
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 279µA
Supplier Device Package: DFN2020Y8LSAA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RF7G120BJFRATCR |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -40V -12A, DFN2020Y8LSAA, PO
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 279µA
Supplier Device Package: DFN2020Y8LSAA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
Description: PCH -40V -12A, DFN2020Y8LSAA, PO
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 3A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 279µA
Supplier Device Package: DFN2020Y8LSAA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V
Qualification: AEC-Q101
на замовлення 605 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 99.36 грн |
| 10+ | 60.72 грн |
| 100+ | 40.37 грн |
| 500+ | 29.71 грн |
| AG142FGS4FRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 408µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V
Qualification: AEC-Q101
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 408µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 48.30 грн |
| AG142FGS4FRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 408µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V
Qualification: AEC-Q101
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 408µA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.57 грн |
| 10+ | 69.08 грн |
| 25+ | 62.71 грн |
| 100+ | 52.22 грн |
| 250+ | 49.06 грн |
| 500+ | 47.15 грн |
| 1000+ | 44.84 грн |
| AG052FPS4FRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 100V 58A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V
Qualification: AEC-Q101
Description: NCH 100V 58A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| AG052FPS4FRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 100V 58A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V
Qualification: AEC-Q101
Description: NCH 100V 58A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 50 V
Qualification: AEC-Q101
на замовлення 2855 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 157.25 грн |
| 10+ | 97.18 грн |
| 100+ | 66.21 грн |
| 500+ | 49.69 грн |
| 1000+ | 48.41 грн |
| AG140FGS4FRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Qualification: AEC-Q101
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| AG140FGS4FRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Qualification: AEC-Q101
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.6mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1985 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 170.55 грн |
| 10+ | 121.97 грн |
| 25+ | 111.41 грн |
| 100+ | 93.73 грн |
| 250+ | 88.56 грн |
| 500+ | 85.44 грн |
| 1000+ | 81.52 грн |
| AG045FLS4FRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 60V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.9mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V
Qualification: AEC-Q101
Description: NCH 60V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.9mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| AG045FLS4FRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 60V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.9mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V
Qualification: AEC-Q101
Description: NCH 60V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 10A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.9mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4390 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 171.33 грн |
| 10+ | 122.42 грн |
| 25+ | 111.86 грн |
| 100+ | 94.10 грн |
| 250+ | 88.91 грн |
| 500+ | 85.79 грн |
| 1000+ | 81.85 грн |
| AG040FGS4FRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 4.2mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Qualification: AEC-Q101
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 4.2mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Qualification: AEC-Q101
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| AG040FGS4FRATCB |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 4.2mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Qualification: AEC-Q101
Description: NCH 40V 120A, HPLF5060T5LSAH, PO
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 120A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 4.2mA
Supplier Device Package: HPLF5060T5LSAH
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 72.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2353 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 240.96 грн |
| 10+ | 151.50 грн |
| 100+ | 105.79 грн |
| 500+ | 86.67 грн |
| BH7881EFV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC AMP CLASS AB STER 2W 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -10°C ~ 70°C (TA)
Voltage - Supply: 3.3V ~ 5.5V
Max Output Power x Channels @ Load: 2W x 2 @ 4Ohm
Supplier Device Package: 24-HTSSOP-B
Description: IC AMP CLASS AB STER 2W 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Output Type: 2-Channel (Stereo) with Stereo Headphones
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -10°C ~ 70°C (TA)
Voltage - Supply: 3.3V ~ 5.5V
Max Output Power x Channels @ Load: 2W x 2 @ 4Ohm
Supplier Device Package: 24-HTSSOP-B
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| MCH155A010CK |
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Виробник: Rohm Semiconductor
Description: CAP CER 1PF 50V C0G/NP0 0402
Tolerance: ±0.25pF
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.022" (0.55mm)
Capacitance: 1 pF
Description: CAP CER 1PF 50V C0G/NP0 0402
Tolerance: ±0.25pF
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.022" (0.55mm)
Capacitance: 1 pF
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| DTC123EMHZGT2L |
![]() |
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 2.87 грн |
| DTC123EMHZGT2L |
![]() |
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.82 грн |
| 58+ | 5.20 грн |
| 67+ | 4.55 грн |
| 100+ | 3.59 грн |
| 250+ | 3.27 грн |
| 500+ | 3.08 грн |
| 1000+ | 2.87 грн |
| 2500+ | 2.71 грн |
| DTC123JMHZGT2L |
![]() |
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 2.87 грн |
| DTC123JMHZGT2L |
![]() |
Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1R2 LEAK ABSORPTI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.82 грн |
| 58+ | 5.20 грн |
| 67+ | 4.55 грн |
| 100+ | 3.59 грн |
| 250+ | 3.27 грн |
| 500+ | 3.08 грн |
| 1000+ | 2.87 грн |
| 2500+ | 2.71 грн |
| SFR01MZPF3902 |
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Виробник: Rohm Semiconductor
Description: RES SMD 39K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 39 kOhms
Description: RES SMD 39K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 39 kOhms
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| SFR01MZPF3902 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 39K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 39 kOhms
Description: RES SMD 39K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 39 kOhms
на замовлення 7793 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.39 грн |
| 72+ | 4.22 грн |
| 92+ | 3.28 грн |
| 110+ | 2.57 грн |
| 131+ | 2.16 грн |
| 250+ | 1.79 грн |
| 500+ | 1.53 грн |
| 1000+ | 1.36 грн |
| 5000+ | 1.08 грн |
| LTR100JZPJ330 |
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Виробник: Rohm Semiconductor
Description: RES SMD 33 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 33 Ohms
Description: RES SMD 33 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 33 Ohms
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| LTR100JZPJ330 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 33 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 33 Ohms
Description: RES SMD 33 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 33 Ohms
на замовлення 2385 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.90 грн |
| 14+ | 22.37 грн |
| 25+ | 18.89 грн |
| 50+ | 15.84 грн |
| 100+ | 14.34 грн |
| 250+ | 12.82 грн |
| 500+ | 11.75 грн |
| 1000+ | 11.06 грн |
| SDR10EZPJ470 |
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Виробник: Rohm Semiconductor
Description: RES 47 OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 Ohms
Description: RES 47 OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 Ohms
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| SDR10EZPJ470 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 47 OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 Ohms
Description: RES 47 OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 47 Ohms
на замовлення 4760 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.08 грн |
| 46+ | 6.63 грн |
| 58+ | 5.27 грн |
| 68+ | 4.20 грн |
| 100+ | 3.62 грн |
| 250+ | 3.03 грн |
| 500+ | 2.65 грн |
| 1000+ | 2.38 грн |
| ESR18EZPF24R0 |
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Виробник: Rohm Semiconductor
Description: RES 24 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
Description: RES 24 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
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| ESR18EZPF24R0 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 24 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
Description: RES 24 OHM 1% 3/4W 1206
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 24 Ohms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.95 грн |
| 58+ | 5.27 грн |
| 73+ | 4.16 грн |
| 87+ | 3.28 грн |
| 105+ | 2.70 грн |
| 250+ | 2.28 грн |
| 500+ | 2.03 грн |
| 1000+ | 1.81 грн |
| SFR18EZPF3902 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 39K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
Description: RES 39K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 2.43 грн |
| SFR18EZPF3902 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 39K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
Description: RES 39K OHM 1% 1/4W 1206
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 39 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ESR01MZPF6203 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 620K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Description: RES 620K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| ESR01MZPF6203 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 620K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Description: RES 620K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
на замовлення 8790 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.43 грн |
| 37+ | 8.36 грн |
| 45+ | 6.75 грн |
| 52+ | 5.44 грн |
| 100+ | 4.74 грн |
| 250+ | 4.04 грн |
| 500+ | 3.58 грн |
| 1000+ | 3.26 грн |
| 5000+ | 2.75 грн |
| SFR01MZPJ624 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| SFR01MZPJ624 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 620 kOhms
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.82 грн |
| 84+ | 3.62 грн |
| 108+ | 2.80 грн |
| 130+ | 2.18 грн |
| 155+ | 1.83 грн |
| 250+ | 1.49 грн |
| 500+ | 1.24 грн |
| 1000+ | 1.08 грн |
| 5000+ | 0.87 грн |
| SFR01MZPF6202 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| SFR01MZPF6202 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
на замовлення 9966 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.39 грн |
| 72+ | 4.22 грн |
| 93+ | 3.25 грн |
| 111+ | 2.56 грн |
| 131+ | 2.17 грн |
| 250+ | 1.78 грн |
| 500+ | 1.53 грн |
| 1000+ | 1.35 грн |
| 5000+ | 1.07 грн |
| SFR01MZPF6201 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 6.2K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
Description: RES 6.2K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| SFR01MZPF6201 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 6.2K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
Description: RES 6.2K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
на замовлення 9876 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.39 грн |
| 72+ | 4.22 грн |
| 93+ | 3.25 грн |
| 111+ | 2.56 грн |
| 131+ | 2.17 грн |
| 250+ | 1.78 грн |
| 500+ | 1.53 грн |
| 1000+ | 1.35 грн |
| 5000+ | 1.07 грн |
| ESR01MZPF6202 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 62K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Description: RES 62K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| ESR01MZPF6202 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 62K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
Description: RES 62K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 62 kOhms
на замовлення 9980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.43 грн |
| 37+ | 8.36 грн |
| 45+ | 6.75 грн |
| 52+ | 5.44 грн |
| 100+ | 4.74 грн |
| 250+ | 4.04 грн |
| 500+ | 3.58 грн |
| 1000+ | 3.26 грн |
| 5000+ | 2.75 грн |
| ESR01MZPF6201 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 6.2K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
Description: RES 6.2K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.12 грн |
| ESR01MZPF6201 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 6.2K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
Description: RES 6.2K OHM 1% 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 6.2 kOhms
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.78 грн |
| DTA013ZUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.04 грн |
| DTA013ZUBTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.65 грн |
| 34+ | 8.89 грн |
| 100+ | 5.49 грн |
| 500+ | 3.77 грн |
| 1000+ | 3.32 грн |
| PBZLTBR1130 |
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Виробник: Rohm Semiconductor
Description: 1000MW, 102V, DO-214AA(SMB), ZEN
Tolerance: ±6.15%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SMBP
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 102 V
Description: 1000MW, 102V, DO-214AA(SMB), ZEN
Tolerance: ±6.15%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SMBP
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 102 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 11.86 грн |
| PBZLTBR1130 |
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Виробник: Rohm Semiconductor
Description: 1000MW, 102V, DO-214AA(SMB), ZEN
Tolerance: ±6.15%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SMBP
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 102 V
Description: 1000MW, 102V, DO-214AA(SMB), ZEN
Tolerance: ±6.15%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 1100 Ohms
Supplier Device Package: SMBP
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 102 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.07 грн |
| 11+ | 30.06 грн |
| 100+ | 19.41 грн |
| 500+ | 13.89 грн |
| 1000+ | 12.49 грн |
| DTC143EMHZGT2L |
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Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 3.83 грн |
| DTC143EMHZGT2L |
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Виробник: Rohm Semiconductor
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: NPN, SOT-723, R1=R2 POTENTIAL DI
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VMT3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.12 грн |
| 24+ | 12.58 грн |
| 100+ | 7.85 грн |
| 500+ | 5.44 грн |
| 1000+ | 4.81 грн |
| 2000+ | 4.28 грн |
| DTC114TUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.44 грн |
| DTC114TUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.73 грн |
| 42+ | 7.23 грн |
| 100+ | 4.45 грн |
| 500+ | 3.04 грн |
| 1000+ | 2.67 грн |
| RV7L020GNTCR1 |
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Виробник: Rohm Semiconductor
Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| RV7L020GNTCR1 |
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Виробник: Rohm Semiconductor
Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Description: NCH 60V 2A MIDDLE POWER MOSFET :
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 50µA
Supplier Device Package: DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
на замовлення 1850 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.33 грн |
| 10+ | 33.83 грн |
| 100+ | 21.89 грн |
| 500+ | 15.73 грн |
| 1000+ | 14.17 грн |
| LM2902EYFV-CE2 |
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Виробник: Rohm Semiconductor
Description: EMARMOUR, AUTOMOTIVE EXCE
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 150°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: EMARMOUR, AUTOMOTIVE EXCE
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 150°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| LM2902EYFV-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: EMARMOUR, AUTOMOTIVE EXCE
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 150°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: EMARMOUR, AUTOMOTIVE EXCE
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 150°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.89 грн |
| 10+ | 52.74 грн |
| 25+ | 47.67 грн |
| 100+ | 39.49 грн |
| 250+ | 36.98 грн |
| 500+ | 35.47 грн |
| 1000+ | 34.09 грн |


















