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SFR03EZPJ563 SFR03EZPJ563 Rohm Semiconductor sfr-e.pdf Description: RES 56K OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
40+8.52 грн
82+4.02 грн
106+3.12 грн
128+2.42 грн
151+2.04 грн
250+1.66 грн
500+1.41 грн
1000+1.24 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
SDR10EZPJ563 SDR10EZPJ563 Rohm Semiconductor sdr-e.pdf Description: RES 56K OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 56 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+2.31 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SDR10EZPJ563 SDR10EZPJ563 Rohm Semiconductor sdr-e.pdf Description: RES 56K OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 56 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
25+13.63 грн
48+6.97 грн
60+5.51 грн
71+4.39 грн
100+3.66 грн
250+3.16 грн
500+2.76 грн
1000+2.49 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
LTR100JZPJ563 LTR100JZPJ563 Rohm Semiconductor ltr-e.pdf Description: RES SMD 56K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+11.70 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
LTR100JZPJ563 LTR100JZPJ563 Rohm Semiconductor ltr-e.pdf Description: RES SMD 56K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
8+44.28 грн
14+24.77 грн
25+20.93 грн
50+17.56 грн
100+15.89 грн
250+14.21 грн
500+13.26 грн
1000+12.26 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SDR03EZPJ563 SDR03EZPJ563 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
SDR03EZPJ563 SDR03EZPJ563 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
на замовлення 9660 шт:
термін постачання 21-31 дні (днів)
40+8.52 грн
82+4.02 грн
106+3.12 грн
128+2.42 грн
151+2.04 грн
250+1.66 грн
500+1.41 грн
1000+1.24 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
ESR03EZPF2491 ESR03EZPF2491 Rohm Semiconductor datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: RES 2.49K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.49 kOhms
товару немає в наявності
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ESR03EZPF2491 ESR03EZPF2491 Rohm Semiconductor datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: RES 2.49K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.49 kOhms
на замовлення 3385 шт:
термін постачання 21-31 дні (днів)
31+11.07 грн
62+5.33 грн
80+4.13 грн
95+3.26 грн
111+2.78 грн
250+2.29 грн
500+1.98 грн
1000+1.76 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
SLI-325YCT31W SLI-325YCT31W Rohm Semiconductor datasheet?p=SLI-325YC(W)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED YELLOW CLEAR T-1 T/H
Packaging: Cut Tape (CT)
Package / Case: Radial
Color: Yellow
Mounting Type: Through Hole
Millicandela Rating: 160mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Yellow
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.80mm
Wavelength - Dominant: 587nm
Supplier Device Package: T-1
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 3.20mm Dia
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SLI-325YCT31W SLI-325YCT31W Rohm Semiconductor datasheet?p=SLI-325YC(W)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: LED YELLOW CLEAR T-1 T/H
Packaging: Tape & Box (TB)
Package / Case: Radial
Color: Yellow
Mounting Type: Through Hole
Millicandela Rating: 160mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Yellow
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.80mm
Wavelength - Dominant: 587nm
Supplier Device Package: T-1
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 3.20mm Dia
товару немає в наявності
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SML-412MWT86 SML-412MWT86 Rohm Semiconductor SML-412MW.pdf Description: LED GREEN DIFFUSED CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 40mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: White
Current - Test: 20mA
Height (Max): 0.50mm
Wavelength - Peak: 570nm
Supplier Device Package: Chip LED
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
товару немає в наявності
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BD63717MUV-E2 Rohm Semiconductor bd63717muv-e.pdf Description: 36V HIGH-PERFORMANCE HIGH-RELIAB
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 26.4V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 26.4V
Supplier Device Package: VQFN24AV4040
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
товару немає в наявності
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BD63717MUV-E2 Rohm Semiconductor bd63717muv-e.pdf Description: 36V HIGH-PERFORMANCE HIGH-RELIAB
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 26.4V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 26.4V
Supplier Device Package: VQFN24AV4040
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)
3+143.92 грн
10+102.59 грн
25+93.42 грн
100+78.21 грн
250+73.71 грн
500+71.00 грн
1000+67.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ML5206-001MBZ0AVL ML5206-001MBZ0AVL Rohm Semiconductor datasheet?p=ML5206-001MB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: LI-ION BATTERY MANAGEMENT LSI 5-
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Protection
Interface: 1-Wire
Operating Temperature: -20°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: 8-VSSOP
Fault Protection: Over Voltage
товару немає в наявності
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ML5206-001MBZ0AVL ML5206-001MBZ0AVL Rohm Semiconductor datasheet?p=ML5206-001MB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: LI-ION BATTERY MANAGEMENT LSI 5-
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Protection
Interface: 1-Wire
Operating Temperature: -20°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: 8-VSSOP
Fault Protection: Over Voltage
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
3+117.52 грн
10+82.83 грн
25+75.22 грн
100+62.78 грн
250+59.05 грн
500+56.80 грн
1000+54.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCR100SJQPJ000 MCR100SJQPJ000 Rohm Semiconductor datasheet?p=MCR100SJQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 6432(2512)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 2512 (6332 Metric)
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 0 Ohms
товару немає в наявності
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MCR100SJQPJ000 MCR100SJQPJ000 Rohm Semiconductor datasheet?p=MCR100SJQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 6432(2512)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 2512 (6332 Metric)
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 0 Ohms
товару немає в наявності
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MCR100SJQPF1000 MCR100SJQPF1000 Rohm Semiconductor datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 100 Ohms
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MCR100SJQPF1000 MCR100SJQPF1000 Rohm Semiconductor datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 100 Ohms
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MCR100SJQPF10R0 MCR100SJQPF10R0 Rohm Semiconductor datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 10 Ohms
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MCR100SJQPF10R0 MCR100SJQPF10R0 Rohm Semiconductor datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 10 Ohms
товару немає в наявності
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BM3G005MUV-EVK-003 BM3G005MUV-EVK-003 Rohm Semiconductor bm3g005muv-evk-003_ug-e.pdf Description: EVAL BOARD FOR BM3G005
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM3G005
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+2850.30 грн
В кошику  од. на суму  грн.
LTR100JZPJ180 LTR100JZPJ180 Rohm Semiconductor ltr-e.pdf Description: RES SMD 18 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 18 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+11.70 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
LTR100JZPJ180 LTR100JZPJ180 Rohm Semiconductor ltr-e.pdf Description: RES SMD 18 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 18 Ohms
на замовлення 4033 шт:
термін постачання 21-31 дні (днів)
8+44.28 грн
14+24.77 грн
25+20.93 грн
50+17.56 грн
100+15.89 грн
250+14.21 грн
500+13.26 грн
1000+12.26 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
LTR100JZPF1800 LTR100JZPF1800 Rohm Semiconductor ltr-e.pdf Description: RES SMD 180 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 Ohms
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LTR100JZPF1800 LTR100JZPF1800 Rohm Semiconductor ltr-e.pdf Description: RES SMD 180 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 Ohms
на замовлення 3723 шт:
термін постачання 21-31 дні (днів)
8+45.99 грн
13+26.41 грн
25+22.37 грн
50+18.79 грн
100+17.05 грн
250+15.29 грн
500+14.04 грн
1000+13.24 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
LTR100JZPF2400 LTR100JZPF2400 Rohm Semiconductor ltr-e.pdf Description: RES SMD 240 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 240 Ohms
товару немає в наявності
В кошику  од. на суму  грн.
LTR100JZPF2400 LTR100JZPF2400 Rohm Semiconductor ltr-e.pdf Description: RES SMD 240 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 240 Ohms
на замовлення 3691 шт:
термін постачання 21-31 дні (днів)
8+45.99 грн
13+26.41 грн
25+22.37 грн
50+18.79 грн
100+17.05 грн
250+15.29 грн
500+14.31 грн
1000+13.24 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
LTR100JZPF5602 LTR100JZPF5602 Rohm Semiconductor ltr-e.pdf Description: RES SMD 56K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
LTR100JZPF5602 LTR100JZPF5602 Rohm Semiconductor ltr-e.pdf Description: RES SMD 56K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
на замовлення 3991 шт:
термін постачання 21-31 дні (днів)
8+45.99 грн
13+26.41 грн
25+22.37 грн
50+18.79 грн
100+17.05 грн
250+15.29 грн
500+14.31 грн
1000+13.24 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
RH7G04DBLFRATCB RH7G04DBLFRATCB Rohm Semiconductor rh7g04dblfratcb-e.pdf Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+33.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04DBLFRATCB RH7G04DBLFRATCB Rohm Semiconductor rh7g04dblfratcb-e.pdf Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+125.19 грн
10+76.43 грн
100+51.20 грн
500+37.89 грн
1000+34.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04DBKFRATCB RH7G04DBKFRATCB Rohm Semiconductor datasheet?p=RH7G04DBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+33.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04DBKFRATCB RH7G04DBKFRATCB Rohm Semiconductor datasheet?p=RH7G04DBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+126.04 грн
10+77.00 грн
100+51.56 грн
500+38.16 грн
1000+34.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04CBJFRATCB RH7G04CBJFRATCB Rohm Semiconductor datasheet?p=RH7G04CBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7G04CBJFRATCB RH7G04CBJFRATCB Rohm Semiconductor datasheet?p=RH7G04CBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
3+146.48 грн
10+90.12 грн
100+60.82 грн
500+45.32 грн
1000+42.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7L04CBKFRATCB RH7L04CBKFRATCB Rohm Semiconductor datasheet?p=RH7L04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7L04CBKFRATCB RH7L04CBKFRATCB Rohm Semiconductor datasheet?p=RH7L04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
3+151.58 грн
10+93.16 грн
100+63.00 грн
500+47.01 грн
1000+44.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04CBKFRATCB RH7G04CBKFRATCB Rohm Semiconductor datasheet?p=RH7G04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+43.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04CBKFRATCB RH7G04CBKFRATCB Rohm Semiconductor datasheet?p=RH7G04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+154.14 грн
10+94.88 грн
100+64.25 грн
500+47.99 грн
1000+45.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7L04CBLFRATCB RH7L04CBLFRATCB Rohm Semiconductor datasheet?p=RH7L04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7L04CBLFRATCB RH7L04CBLFRATCB Rohm Semiconductor datasheet?p=RH7L04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
3+154.99 грн
10+95.70 грн
100+64.83 грн
500+48.43 грн
1000+46.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04CBLFRATCB RH7G04CBLFRATCB Rohm Semiconductor datasheet?p=RH7G04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7G04CBLFRATCB RH7G04CBLFRATCB Rohm Semiconductor datasheet?p=RH7G04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
3+154.99 грн
10+95.54 грн
100+64.71 грн
500+48.34 грн
1000+45.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7E04BBJFRATCB RH7E04BBJFRATCB Rohm Semiconductor datasheet?p=RH7E04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+45.98 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7E04BBJFRATCB RH7E04BBJFRATCB Rohm Semiconductor datasheet?p=RH7E04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+162.66 грн
10+100.29 грн
100+68.10 грн
500+50.98 грн
1000+49.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04BBJFRATCB RH7G04BBJFRATCB Rohm Semiconductor datasheet?p=RH7G04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+46.39 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04BBJFRATCB RH7G04BBJFRATCB Rohm Semiconductor datasheet?p=RH7G04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+164.36 грн
10+101.03 грн
100+68.66 грн
500+51.41 грн
1000+49.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04BBKFRATCB RH7G04BBKFRATCB Rohm Semiconductor datasheet?p=RH7G04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+47.87 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04BBKFRATCB RH7G04BBKFRATCB Rohm Semiconductor datasheet?p=RH7G04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+168.62 грн
10+103.82 грн
100+70.66 грн
500+52.98 грн
1000+51.36 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7L04BBKFRATCB RH7L04BBKFRATCB Rohm Semiconductor datasheet?p=RH7L04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+49.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7L04BBKFRATCB RH7L04BBKFRATCB Rohm Semiconductor datasheet?p=RH7L04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+174.58 грн
10+107.76 грн
100+73.44 грн
500+55.15 грн
1000+53.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RH7L04BBLFRATCB RH7L04BBLFRATCB Rohm Semiconductor rh7l04bblfratcb-e.pdf Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+49.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7L04BBLFRATCB RH7L04BBLFRATCB Rohm Semiconductor rh7l04bblfratcb-e.pdf Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+174.58 грн
10+107.76 грн
100+73.44 грн
500+55.15 грн
1000+53.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RQ3N060ATTB1 RQ3N060ATTB1 Rohm Semiconductor rq3n060attb1-e.pdf Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
RQ3N060ATTB1 RQ3N060ATTB1 Rohm Semiconductor rq3n060attb1-e.pdf Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
3+148.18 грн
10+91.52 грн
100+61.86 грн
500+46.12 грн
1000+43.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCR01SMQPJ000 MCR01SMQPJ000 Rohm Semiconductor datasheet?p=MCR01SMQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
товару немає в наявності
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MCR01SMQPJ000 MCR01SMQPJ000 Rohm Semiconductor datasheet?p=MCR01SMQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: 1005(0402)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
товару немає в наявності
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BD7LS07G-CTL BD7LS07G-CTL Rohm Semiconductor datasheet?p=BD7LS07G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC BUFFER NON-INVERT 5.5V 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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SFR03EZPJ563 sfr-e.pdf
SFR03EZPJ563
Виробник: Rohm Semiconductor
Description: RES 56K OHM 5% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
40+8.52 грн
82+4.02 грн
106+3.12 грн
128+2.42 грн
151+2.04 грн
250+1.66 грн
500+1.41 грн
1000+1.24 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
SDR10EZPJ563 sdr-e.pdf
SDR10EZPJ563
Виробник: Rohm Semiconductor
Description: RES 56K OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 56 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+2.31 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SDR10EZPJ563 sdr-e.pdf
SDR10EZPJ563
Виробник: Rohm Semiconductor
Description: RES 56K OHM 5% 1/2W 0805
Power (Watts): 0.667W, 2/3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 56 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.63 грн
48+6.97 грн
60+5.51 грн
71+4.39 грн
100+3.66 грн
250+3.16 грн
500+2.76 грн
1000+2.49 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
LTR100JZPJ563 ltr-e.pdf
LTR100JZPJ563
Виробник: Rohm Semiconductor
Description: RES SMD 56K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+11.70 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
LTR100JZPJ563 ltr-e.pdf
LTR100JZPJ563
Виробник: Rohm Semiconductor
Description: RES SMD 56K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.28 грн
14+24.77 грн
25+20.93 грн
50+17.56 грн
100+15.89 грн
250+14.21 грн
500+13.26 грн
1000+12.26 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SDR03EZPJ563 sdr-e.pdf
SDR03EZPJ563
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
товару немає в наявності
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SDR03EZPJ563 sdr-e.pdf
SDR03EZPJ563
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 56 kOhms
на замовлення 9660 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
40+8.52 грн
82+4.02 грн
106+3.12 грн
128+2.42 грн
151+2.04 грн
250+1.66 грн
500+1.41 грн
1000+1.24 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
ESR03EZPF2491 datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ESR03EZPF2491
Виробник: Rohm Semiconductor
Description: RES 2.49K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.49 kOhms
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ESR03EZPF2491 datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
ESR03EZPF2491
Виробник: Rohm Semiconductor
Description: RES 2.49K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.49 kOhms
на замовлення 3385 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+11.07 грн
62+5.33 грн
80+4.13 грн
95+3.26 грн
111+2.78 грн
250+2.29 грн
500+1.98 грн
1000+1.76 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
SLI-325YCT31W datasheet?p=SLI-325YC(W)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SLI-325YCT31W
Виробник: Rohm Semiconductor
Description: LED YELLOW CLEAR T-1 T/H
Packaging: Cut Tape (CT)
Package / Case: Radial
Color: Yellow
Mounting Type: Through Hole
Millicandela Rating: 160mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Yellow
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.80mm
Wavelength - Dominant: 587nm
Supplier Device Package: T-1
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 3.20mm Dia
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SLI-325YCT31W datasheet?p=SLI-325YC(W)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SLI-325YCT31W
Виробник: Rohm Semiconductor
Description: LED YELLOW CLEAR T-1 T/H
Packaging: Tape & Box (TB)
Package / Case: Radial
Color: Yellow
Mounting Type: Through Hole
Millicandela Rating: 160mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 1.9V
Lens Color: Yellow
Current - Test: 20mA
Viewing Angle: 40°
Height (Max): 5.80mm
Wavelength - Dominant: 587nm
Supplier Device Package: T-1
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 3.20mm Dia
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SML-412MWT86 SML-412MW.pdf
SML-412MWT86
Виробник: Rohm Semiconductor
Description: LED GREEN DIFFUSED CHIP SMD
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Color: Green
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 40mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: White
Current - Test: 20mA
Height (Max): 0.50mm
Wavelength - Peak: 570nm
Supplier Device Package: Chip LED
Lens Transparency: Diffused
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
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BD63717MUV-E2 bd63717muv-e.pdf
Виробник: Rohm Semiconductor
Description: 36V HIGH-PERFORMANCE HIGH-RELIAB
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 26.4V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 26.4V
Supplier Device Package: VQFN24AV4040
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
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BD63717MUV-E2 bd63717muv-e.pdf
Виробник: Rohm Semiconductor
Description: 36V HIGH-PERFORMANCE HIGH-RELIAB
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 26.4V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 26.4V
Supplier Device Package: VQFN24AV4040
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
на замовлення 2495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+143.92 грн
10+102.59 грн
25+93.42 грн
100+78.21 грн
250+73.71 грн
500+71.00 грн
1000+67.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ML5206-001MBZ0AVL datasheet?p=ML5206-001MB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML5206-001MBZ0AVL
Виробник: Rohm Semiconductor
Description: LI-ION BATTERY MANAGEMENT LSI 5-
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Protection
Interface: 1-Wire
Operating Temperature: -20°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: 8-VSSOP
Fault Protection: Over Voltage
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ML5206-001MBZ0AVL datasheet?p=ML5206-001MB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
ML5206-001MBZ0AVL
Виробник: Rohm Semiconductor
Description: LI-ION BATTERY MANAGEMENT LSI 5-
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Number of Cells: 3 ~ 5
Mounting Type: Surface Mount
Function: Battery Protection
Interface: 1-Wire
Operating Temperature: -20°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: 8-VSSOP
Fault Protection: Over Voltage
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.52 грн
10+82.83 грн
25+75.22 грн
100+62.78 грн
250+59.05 грн
500+56.80 грн
1000+54.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCR100SJQPJ000 datasheet?p=MCR100SJQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR100SJQPJ000
Виробник: Rohm Semiconductor
Description: 6432(2512)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 2512 (6332 Metric)
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 0 Ohms
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MCR100SJQPJ000 datasheet?p=MCR100SJQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR100SJQPJ000
Виробник: Rohm Semiconductor
Description: 6432(2512)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 2512 (6332 Metric)
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 0 Ohms
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MCR100SJQPF1000 datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR100SJQPF1000
Виробник: Rohm Semiconductor
Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 100 Ohms
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MCR100SJQPF1000 datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR100SJQPF1000
Виробник: Rohm Semiconductor
Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 100 Ohms
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MCR100SJQPF10R0 datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR100SJQPF10R0
Виробник: Rohm Semiconductor
Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 10 Ohms
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MCR100SJQPF10R0 datasheet?p=MCR100SJQPF&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR100SJQPF10R0
Виробник: Rohm Semiconductor
Description: 6432(2512)SIZE, HIGH POWER THICK
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 2512 (6332 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.252" L x 0.124" W (6.40mm x 3.15mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 2512
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 10 Ohms
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BM3G005MUV-EVK-003 bm3g005muv-evk-003_ug-e.pdf
BM3G005MUV-EVK-003
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BM3G005
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BM3G005
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2850.30 грн
В кошику  од. на суму  грн.
LTR100JZPJ180 ltr-e.pdf
LTR100JZPJ180
Виробник: Rohm Semiconductor
Description: RES SMD 18 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 18 Ohms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+11.70 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
LTR100JZPJ180 ltr-e.pdf
LTR100JZPJ180
Виробник: Rohm Semiconductor
Description: RES SMD 18 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 18 Ohms
на замовлення 4033 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.28 грн
14+24.77 грн
25+20.93 грн
50+17.56 грн
100+15.89 грн
250+14.21 грн
500+13.26 грн
1000+12.26 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
LTR100JZPF1800 ltr-e.pdf
LTR100JZPF1800
Виробник: Rohm Semiconductor
Description: RES SMD 180 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 Ohms
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LTR100JZPF1800 ltr-e.pdf
LTR100JZPF1800
Виробник: Rohm Semiconductor
Description: RES SMD 180 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 Ohms
на замовлення 3723 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.99 грн
13+26.41 грн
25+22.37 грн
50+18.79 грн
100+17.05 грн
250+15.29 грн
500+14.04 грн
1000+13.24 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
LTR100JZPF2400 ltr-e.pdf
LTR100JZPF2400
Виробник: Rohm Semiconductor
Description: RES SMD 240 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 240 Ohms
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LTR100JZPF2400 ltr-e.pdf
LTR100JZPF2400
Виробник: Rohm Semiconductor
Description: RES SMD 240 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 240 Ohms
на замовлення 3691 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.99 грн
13+26.41 грн
25+22.37 грн
50+18.79 грн
100+17.05 грн
250+15.29 грн
500+14.31 грн
1000+13.24 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
LTR100JZPF5602 ltr-e.pdf
LTR100JZPF5602
Виробник: Rohm Semiconductor
Description: RES SMD 56K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
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LTR100JZPF5602 ltr-e.pdf
LTR100JZPF5602
Виробник: Rohm Semiconductor
Description: RES SMD 56K OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 56 kOhms
на замовлення 3991 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.99 грн
13+26.41 грн
25+22.37 грн
50+18.79 грн
100+17.05 грн
250+15.29 грн
500+14.31 грн
1000+13.24 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
RH7G04DBLFRATCB rh7g04dblfratcb-e.pdf
RH7G04DBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+33.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04DBLFRATCB rh7g04dblfratcb-e.pdf
RH7G04DBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.19 грн
10+76.43 грн
100+51.20 грн
500+37.89 грн
1000+34.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04DBKFRATCB datasheet?p=RH7G04DBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04DBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+33.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04DBKFRATCB datasheet?p=RH7G04DBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04DBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 20A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+126.04 грн
10+77.00 грн
100+51.56 грн
500+38.16 грн
1000+34.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04CBJFRATCB datasheet?p=RH7G04CBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBJFRATCB
Виробник: Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7G04CBJFRATCB datasheet?p=RH7G04CBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBJFRATCB
Виробник: Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.3mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+146.48 грн
10+90.12 грн
100+60.82 грн
500+45.32 грн
1000+42.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7L04CBKFRATCB datasheet?p=RH7L04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04CBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7L04CBKFRATCB datasheet?p=RH7L04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04CBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+151.58 грн
10+93.16 грн
100+63.00 грн
500+47.01 грн
1000+44.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04CBKFRATCB datasheet?p=RH7G04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+43.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04CBKFRATCB datasheet?p=RH7G04CBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.14 грн
10+94.88 грн
100+64.25 грн
500+47.99 грн
1000+45.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7L04CBLFRATCB datasheet?p=RH7L04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04CBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7L04CBLFRATCB datasheet?p=RH7L04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04CBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.99 грн
10+95.70 грн
100+64.83 грн
500+48.43 грн
1000+46.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04CBLFRATCB datasheet?p=RH7G04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RH7G04CBLFRATCB datasheet?p=RH7G04CBLFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04CBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.99 грн
10+95.54 грн
100+64.71 грн
500+48.34 грн
1000+45.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7E04BBJFRATCB datasheet?p=RH7E04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7E04BBJFRATCB
Виробник: Rohm Semiconductor
Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+45.98 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7E04BBJFRATCB datasheet?p=RH7E04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7E04BBJFRATCB
Виробник: Rohm Semiconductor
Description: PCH -30V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 2.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+162.66 грн
10+100.29 грн
100+68.10 грн
500+50.98 грн
1000+49.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04BBJFRATCB datasheet?p=RH7G04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04BBJFRATCB
Виробник: Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+46.39 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04BBJFRATCB datasheet?p=RH7G04BBJFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04BBJFRATCB
Виробник: Rohm Semiconductor
Description: PCH -40V -40A, DFN3333T8LSAB, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.7mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+164.36 грн
10+101.03 грн
100+68.66 грн
500+51.41 грн
1000+49.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7G04BBKFRATCB datasheet?p=RH7G04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04BBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+47.87 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7G04BBKFRATCB datasheet?p=RH7G04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7G04BBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 40V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 20 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+168.62 грн
10+103.82 грн
100+70.66 грн
500+52.98 грн
1000+51.36 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RH7L04BBKFRATCB datasheet?p=RH7L04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04BBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+49.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7L04BBKFRATCB datasheet?p=RH7L04BBKFRA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RH7L04BBKFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.58 грн
10+107.76 грн
100+73.44 грн
500+55.15 грн
1000+53.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RH7L04BBLFRATCB rh7l04bblfratcb-e.pdf
RH7L04BBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+49.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RH7L04BBLFRATCB rh7l04bblfratcb-e.pdf
RH7L04BBLFRATCB
Виробник: Rohm Semiconductor
Description: NCH 60V 40A, DFN3333T8LSAB, POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: DFN3333T8LSAB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 30 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.58 грн
10+107.76 грн
100+73.44 грн
500+55.15 грн
1000+53.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RQ3N060ATTB1 rq3n060attb1-e.pdf
RQ3N060ATTB1
Виробник: Rohm Semiconductor
Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
RQ3N060ATTB1 rq3n060attb1-e.pdf
RQ3N060ATTB1
Виробник: Rohm Semiconductor
Description: PCH -80V -18A, HSMT8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 40 V
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.18 грн
10+91.52 грн
100+61.86 грн
500+46.12 грн
1000+43.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCR01SMQPJ000 datasheet?p=MCR01SMQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPJ000
Виробник: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
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MCR01SMQPJ000 datasheet?p=MCR01SMQPJ000&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
MCR01SMQPJ000
Виробник: Rohm Semiconductor
Description: 1005(0402)SIZE, HIGH POWER THICK
Tolerance: Jumper
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
товару немає в наявності
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BD7LS07G-CTL datasheet?p=BD7LS07G-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7LS07G-CTL
Виробник: Rohm Semiconductor
Description: IC BUFFER NON-INVERT 5.5V 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA
Supplier Device Package: 5-SSOP
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
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