Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103510) > Сторінка 1080 з 1726
| Фото | Назва | Виробник | Інформація |
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LM2902EZFV-CE2 | Rohm Semiconductor |
Description: AUTOMOTIVE GROUND SENSE OPERATIOPackaging: Tape & Reel (TR) Package / Case: 14-LSSOP (0.173", 4.40mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 250µA (x4 Channels) Slew Rate: 0.2V/µs Gain Bandwidth Product: 500 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SSOPB Grade: Automotive Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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LM2902EZFV-CE2 | Rohm Semiconductor |
Description: AUTOMOTIVE GROUND SENSE OPERATIOPackaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.173", 4.40mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 250µA (x4 Channels) Slew Rate: 0.2V/µs Gain Bandwidth Product: 500 kHz Current - Input Bias: 20 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SSOPB Grade: Automotive Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SFR10EZPJ302 | Rohm Semiconductor |
Description: RES 3 KOHM 5% 1/8W 0805Packaging: Tape & Reel (TR) Power (Watts): 0.125W, 1/8W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 3 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCH185A241JK | Rohm Semiconductor |
Description: CAP CER 240PF 50V C0G/NP0 0603Packaging: Tape & Reel (TR) Tolerance: ±5% Voltage - Rated: 50V Package / Case: 0603 (1608 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.035" (0.90mm) Capacitance: 240 pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD15IC0JEFJ-E2 | Rohm Semiconductor |
Description: 1A 1.5V, FIXED OUTPUT, HIGH-ACCUPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -25°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 500 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.5V Control Features: Enable Voltage Dropout (Max): 0.6V @ 1A Protection Features: Over Current, Over Temperature |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD15IC0JEFJ-E2 | Rohm Semiconductor |
Description: 1A 1.5V, FIXED OUTPUT, HIGH-ACCUPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -25°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 500 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.5V Control Features: Enable Voltage Dropout (Max): 0.6V @ 1A Protection Features: Over Current, Over Temperature |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD15GC0WEFJ-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 1.5V 1A 8-HTSOP-JPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -25°C ~ 85°C Output Configuration: Positive Voltage - Input (Max): 14V Number of Regulators: 1 Supplier Device Package: 8-HTSOP-J Voltage - Output (Min/Fixed): 1.5V Control Features: Enable Voltage Dropout (Max): 0.92V @ 1A Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 900 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR100JZPF6802 | Rohm Semiconductor |
Description: RES SMD 68K OHM 1% 3W 2512 WIDEPackaging: Tape & Reel (TR) Power (Watts): 3W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 68 kOhms |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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LTR100JZPF6802 | Rohm Semiconductor |
Description: RES SMD 68K OHM 1% 3W 2512 WIDEPackaging: Cut Tape (CT) Power (Watts): 3W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Resistance: 68 kOhms |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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GNP2070TD-ZTR | Rohm Semiconductor |
Description: ECOGAN?, 650V 27A TOLL-8N, E-MODPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V Power Dissipation (Max): 159W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 18mA Supplier Device Package: TOLL-8N Drive Voltage (Max Rds On, Min Rds On): 5V, 6V Vgs (Max): +6.5V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GNP2070TD-ZTR | Rohm Semiconductor |
Description: ECOGAN?, 650V 27A TOLL-8N, E-MODPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V Power Dissipation (Max): 159W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 18mA Supplier Device Package: TOLL-8N Drive Voltage (Max Rds On, Min Rds On): 5V, 6V Vgs (Max): +6.5V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V |
на замовлення 1616 шт: термін постачання 21-31 дні (днів) |
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RS6P100BGTB1 | Rohm Semiconductor |
Description: NCH 100V 100A, HSOP8, POWER MOSFPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V Power Dissipation (Max): 3W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RS6P100BGTB1 | Rohm Semiconductor |
Description: NCH 100V 100A, HSOP8, POWER MOSFPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V Power Dissipation (Max): 3W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLR2371YG-CTR | Rohm Semiconductor |
Description: TLR; SERIES, AUTOMOTIVE LOW NOISPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Single Ended, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 1.13mA Slew Rate: 3V/µs Gain Bandwidth Product: 5 MHz Current - Input Bias: 2.5 pA Voltage - Input Offset: 10 µV Supplier Device Package: 5-SSOP Grade: Automotive Number of Circuits: 1 Current - Output / Channel: 22 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLR2371YG-CTR | Rohm Semiconductor |
Description: TLR; SERIES, AUTOMOTIVE LOW NOISPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Single Ended, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 1.13mA Slew Rate: 3V/µs Gain Bandwidth Product: 5 MHz Current - Input Bias: 2.5 pA Voltage - Input Offset: 10 µV Supplier Device Package: 5-SSOP Grade: Automotive Number of Circuits: 1 Current - Output / Channel: 22 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
на замовлення 2967 шт: термін постачання 21-31 дні (днів) |
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SCT4065DWATL | Rohm Semiconductor |
Description: 750V, 22A, 7-PIN SMD, TRENCH-STRPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 6.15mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SCT4065DWATL | Rohm Semiconductor |
Description: 750V, 22A, 7-PIN SMD, TRENCH-STRPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 6.15mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V |
на замовлення 1100 шт: термін постачання 21-31 дні (днів) |
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SCT4090KWATL | Rohm Semiconductor |
Description: 1200V, 17A, 7-PIN SMD, TRENCH-STPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 4.44mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SCT4090KWATL | Rohm Semiconductor |
Description: 1200V, 17A, 7-PIN SMD, TRENCH-STPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 4.44mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SCT4065DWAHRTL | Rohm Semiconductor |
Description: 750V, 22A, 7-PIN SMD, TRENCH-STRPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 6.15mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCT4065DWAHRTL | Rohm Semiconductor |
Description: 750V, 22A, 7-PIN SMD, TRENCH-STRPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 6.15mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V Qualification: AEC-Q101 |
на замовлення 997 шт: термін постачання 21-31 дні (днів) |
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SCT4090KWAHRTL | Rohm Semiconductor |
Description: 1200V, 17A, 7-PIN SMD, TRENCH-STPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tj) Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 4.44mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCT4090KWAHRTL | Rohm Semiconductor |
Description: 1200V, 17A, 7-PIN SMD, TRENCH-STPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tj) Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V Power Dissipation (Max): 71W Vgs(th) (Max) @ Id: 4.8V @ 4.44mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 997 шт: термін постачання 21-31 дні (днів) |
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SCT4036DWATL | Rohm Semiconductor |
Description: 750V, 38A, 7-PIN SMD, TRENCH-STRPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SCT4036DWATL | Rohm Semiconductor |
Description: 750V, 38A, 7-PIN SMD, TRENCH-STRPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SCT4036DWAHRTL | Rohm Semiconductor |
Description: 750V, 38A, 7-PIN SMD, TRENCH-STRPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SCT4036DWAHRTL | Rohm Semiconductor |
Description: 750V, 38A, 7-PIN SMD, TRENCH-STRPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 115W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SCT4036KWATL | Rohm Semiconductor |
Description: 1200V, 40A, 7-PIN SMD, TRENCH-STPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCT4036KWATL | Rohm Semiconductor |
Description: 1200V, 40A, 7-PIN SMD, TRENCH-STPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 4.8V @ 11.1mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V |
на замовлення 961 шт: термін постачання 21-31 дні (днів) |
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SCT4018KWATL | Rohm Semiconductor |
Description: 1200V, 75A, 7-PIN SMD, TRENCH-STPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 4.8V @ 22.2mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SCT4018KWATL | Rohm Semiconductor |
Description: 1200V, 75A, 7-PIN SMD, TRENCH-STPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V Power Dissipation (Max): 267W Vgs(th) (Max) @ Id: 4.8V @ 22.2mA Supplier Device Package: TO-263-7LA Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RS7P200BMTB1 | Rohm Semiconductor |
Description: NCH 100V 200A, DFN5060-8S, WIDE-Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: DFN5060-8S Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RS7P200BMTB1 | Rohm Semiconductor |
Description: NCH 100V 200A, DFN5060-8S, WIDE-Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 217W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: DFN5060-8S Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 50 V |
на замовлення 1082 шт: термін постачання 21-31 дні (днів) |
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GMR50HJBFGR018 | Rohm Semiconductor |
Description: RES 18M OHM 1% 4W 2010Packaging: Tape & Reel (TR) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: 2010 (5025 Metric) Temperature Coefficient: ±25ppm/°C Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm) Composition: Metal Element Operating Temperature: -65°C ~ 170°C Number of Terminations: 2 Supplier Device Package: 2010 Height - Seated (Max): 0.022" (0.55mm) Resistance: 18 mOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GMR50HJBFGR018 | Rohm Semiconductor |
Description: RES 18M OHM 1% 4W 2010Packaging: Cut Tape (CT) Power (Watts): 4W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: 2010 (5025 Metric) Temperature Coefficient: ±25ppm/°C Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm) Composition: Metal Element Operating Temperature: -65°C ~ 170°C Number of Terminations: 2 Supplier Device Package: 2010 Height - Seated (Max): 0.022" (0.55mm) Resistance: 18 mOhms |
на замовлення 1988 шт: термін постачання 21-31 дні (днів) |
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ESR18EZPF91R0 | Rohm Semiconductor |
Description: RES 91 OHM 1% 3/4W 1206Packaging: Tape & Reel (TR) Power (Watts): 0.75W, 3/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 91 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ESR18EZPF91R0 | Rohm Semiconductor |
Description: RES 91 OHM 1% 3/4W 1206Packaging: Cut Tape (CT) Power (Watts): 0.75W, 3/4W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 91 Ohms |
на замовлення 2686 шт: термін постачання 21-31 дні (днів) |
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BST91B1P4K01-VC | Rohm Semiconductor |
Description: HSDIP20, 750V, 90A, FULL-BRIDGE,Packaging: Box Package / Case: 20-PowerDIP Module (1.508", 38.30mm) Mounting Type: Through Hole Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C Technology: Silicon Carbide (SiC) Power - Max: 385W (Tc) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Supplier Device Package: 20-HSDIP |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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BST91T1P4K01-VC | Rohm Semiconductor |
Description: HSDIP20, 750V, 90A, 3-PHASE-BRIDPackaging: Box Package / Case: 20-PowerDIP Module (1.508", 38.30mm) Mounting Type: Through Hole Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C Technology: Silicon Carbide (SiC) Power - Max: 385W (Tc) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V Vgs(th) (Max) @ Id: 4.8V @ 30.8mA Supplier Device Package: 20-HSDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| CSL0402WBN1W | Rohm Semiconductor |
Description: LED INDICATION SMD Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BD521VNVX-2CTL | Rohm Semiconductor |
Description: NANO ENERGY, 0.965V, ADJUSTABLEPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active High Operating Temperature: -40°C ~ 125°C Number of Voltages Monitored: 1 Reset Timeout: 27.7ms Minimum Voltage - Threshold: 0.965V Supplier Device Package: SSON004R1010 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD521VNVX-2CTL | Rohm Semiconductor |
Description: NANO ENERGY, 0.965V, ADJUSTABLEPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active High Operating Temperature: -40°C ~ 125°C Number of Voltages Monitored: 1 Reset Timeout: 27.7ms Minimum Voltage - Threshold: 0.965V Supplier Device Package: SSON004R1010 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4995 шт: термін постачання 21-31 дні (днів) |
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BU31TD2WNVX-TL | Rohm Semiconductor |
Description: IC REG LIN 3.1V 200MA 4SSONPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SSON004X1010 Voltage - Output (Min/Fixed): 3.1V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.46V @ 200mA Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BU31TD2WNVX-TL | Rohm Semiconductor |
Description: IC REG LIN 3.1V 200MA 4SSONPackaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SSON004X1010 Voltage - Output (Min/Fixed): 3.1V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.46V @ 200mA Protection Features: Over Current, Over Temperature |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BU1BTD2WNVX-TL | Rohm Semiconductor |
Description: IC REG LINEAR 1.15V 200MA 4SSONPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SSON004X1010 Voltage - Output (Min/Fixed): 1.15V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 1.1V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BU2JTD2WNVX-TL | Rohm Semiconductor |
Description: IC REG LINEAR 2.85V 200MA 4SSONPackaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SSON004X1010 Voltage - Output (Min/Fixed): 2.85V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.5V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LTR18EZPD47R0 | Rohm Semiconductor |
Description: WIDE TERMINAL RES 1206, 0,5%Packaging: Tape & Reel (TR) Power (Watts): 0.75W, 3/4W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: Wide 1206 (3216 Metric), 0612 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0612 Height - Seated (Max): 0.027" (0.68mm) Resistance: 47 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MCH155A8R2DK | Rohm Semiconductor |
Description: CAP CER 8.2PF 50V C0G/NP0 0402Packaging: Tape & Reel (TR) Tolerance: ±0.5pF Voltage - Rated: 50V Package / Case: 0402 (1005 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.022" (0.55mm) Capacitance: 8.2 pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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UMZ6.8NFMT106 | Rohm Semiconductor |
Description: 5V, 200MW, HIGHLY RELIABLE, TRANPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C Applications: General Purpose Capacitance @ Frequency: 28pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UMD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.47V Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMZ6.8NFMT106 | Rohm Semiconductor |
Description: 5V, 200MW, HIGHLY RELIABLE, TRANPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C Applications: General Purpose Capacitance @ Frequency: 28pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UMD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.47V Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMZ6.8NFMFHT106 | Rohm Semiconductor |
Description: 5V, 200MW, AUTOMOTIVE TRANSIENTPackaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C Applications: General Purpose Capacitance @ Frequency: 28pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UMD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.47V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMZ6.8NFMFHT106 | Rohm Semiconductor |
Description: 5V, 200MW, AUTOMOTIVE TRANSIENTPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C Applications: General Purpose Capacitance @ Frequency: 28pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: UMD3 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6.47V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BD7LS02ZG-CTL | Rohm Semiconductor |
Description: AUTOMOTIVE SINGLE 2-INPUT NOR GAPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF Grade: Automotive Number of Circuits: 1 Current - Quiescent (Max): 10 µA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD7LS02ZG-CTL | Rohm Semiconductor |
Description: AUTOMOTIVE SINGLE 2-INPUT NOR GAPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF Grade: Automotive Number of Circuits: 1 Current - Quiescent (Max): 10 µA Qualification: AEC-Q100 |
на замовлення 2897 шт: термін постачання 21-31 дні (днів) |
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BA3474F-E2 | Rohm Semiconductor |
Description: IC OPAMP GP 4 CIRCUIT 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 8mA Slew Rate: 10V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 100 nA Voltage - Input Offset: 1.5 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BA3474F-E2 | Rohm Semiconductor |
Description: IC OPAMP GP 4 CIRCUIT 14SOPPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Current - Supply: 8mA Slew Rate: 10V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 100 nA Voltage - Input Offset: 1.5 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 36 V |
на замовлення 2465 шт: термін постачання 21-31 дні (днів) |
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ESD6V8ASAFHT2RB | Rohm Semiconductor |
Description: 5V, 180W, AUTOMOTIVE TRANSIENT VPackaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount, Wettable Flank Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006-2W Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.2V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 180W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ESD6V8ASAFHT2RB | Rohm Semiconductor |
Description: 5V, 180W, AUTOMOTIVE TRANSIENT VPackaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount, Wettable Flank Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: DFN1006-2W Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.2V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 180W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGW40TS65GC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 40A TO-247GEPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A Supplier Device Package: TO-247GE IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/76ns Switching Energy: 330µJ (on), 300µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 59 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 136 W |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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RGW40TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 40A TO-247GEPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A Supplier Device Package: TO-247GE IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/76ns Switching Energy: 330µJ (on), 300µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 59 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 136 W |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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| LM2902EZFV-CE2 |
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Виробник: Rohm Semiconductor
Description: AUTOMOTIVE GROUND SENSE OPERATIO
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: AUTOMOTIVE GROUND SENSE OPERATIO
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 31.32 грн |
| LM2902EZFV-CE2 |
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Виробник: Rohm Semiconductor
Description: AUTOMOTIVE GROUND SENSE OPERATIO
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: AUTOMOTIVE GROUND SENSE OPERATIO
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA (x4 Channels)
Slew Rate: 0.2V/µs
Gain Bandwidth Product: 500 kHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SSOPB
Grade: Automotive
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.67 грн |
| 10+ | 45.79 грн |
| 25+ | 41.29 грн |
| 100+ | 34.10 грн |
| 250+ | 31.89 грн |
| 500+ | 30.56 грн |
| 1000+ | 29.17 грн |
| SFR10EZPJ302 |
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Виробник: Rohm Semiconductor
Description: RES 3 KOHM 5% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3 kOhms
Description: RES 3 KOHM 5% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3 kOhms
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| MCH185A241JK |
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Виробник: Rohm Semiconductor
Description: CAP CER 240PF 50V C0G/NP0 0603
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Voltage - Rated: 50V
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.035" (0.90mm)
Capacitance: 240 pF
Description: CAP CER 240PF 50V C0G/NP0 0603
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Voltage - Rated: 50V
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.035" (0.90mm)
Capacitance: 240 pF
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| BD15IC0JEFJ-E2 |
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Виробник: Rohm Semiconductor
Description: 1A 1.5V, FIXED OUTPUT, HIGH-ACCU
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -25°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 1A
Protection Features: Over Current, Over Temperature
Description: 1A 1.5V, FIXED OUTPUT, HIGH-ACCU
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -25°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 1A
Protection Features: Over Current, Over Temperature
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 25.77 грн |
| BD15IC0JEFJ-E2 |
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Виробник: Rohm Semiconductor
Description: 1A 1.5V, FIXED OUTPUT, HIGH-ACCU
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -25°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 1A
Protection Features: Over Current, Over Temperature
Description: 1A 1.5V, FIXED OUTPUT, HIGH-ACCU
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -25°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 1A
Protection Features: Over Current, Over Temperature
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 55.38 грн |
| 10+ | 38.17 грн |
| 25+ | 34.28 грн |
| 100+ | 28.23 грн |
| 250+ | 26.35 грн |
| 500+ | 25.21 грн |
| 1000+ | 23.88 грн |
| BD15GC0WEFJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.5V 1A 8-HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -25°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Voltage Dropout (Max): 0.92V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 900 µA
Description: IC REG LINEAR 1.5V 1A 8-HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -25°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 14V
Number of Regulators: 1
Supplier Device Package: 8-HTSOP-J
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Voltage Dropout (Max): 0.92V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 900 µA
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| LTR100JZPF6802 |
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Виробник: Rohm Semiconductor
Description: RES SMD 68K OHM 1% 3W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 68 kOhms
Description: RES SMD 68K OHM 1% 3W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 68 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 13.36 грн |
| LTR100JZPF6802 |
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Виробник: Rohm Semiconductor
Description: RES SMD 68K OHM 1% 3W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 68 kOhms
Description: RES SMD 68K OHM 1% 3W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 68 kOhms
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.89 грн |
| 12+ | 25.98 грн |
| 25+ | 21.94 грн |
| 50+ | 18.45 грн |
| 100+ | 16.74 грн |
| 250+ | 15.01 грн |
| 500+ | 13.78 грн |
| 1000+ | 12.99 грн |
| GNP2070TD-ZTR |
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Виробник: Rohm Semiconductor
Description: ECOGAN?, 650V 27A TOLL-8N, E-MOD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V
Power Dissipation (Max): 159W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 5V, 6V
Vgs (Max): +6.5V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V
Description: ECOGAN?, 650V 27A TOLL-8N, E-MOD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V
Power Dissipation (Max): 159W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 5V, 6V
Vgs (Max): +6.5V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V
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| GNP2070TD-ZTR |
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Виробник: Rohm Semiconductor
Description: ECOGAN?, 650V 27A TOLL-8N, E-MOD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V
Power Dissipation (Max): 159W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 5V, 6V
Vgs (Max): +6.5V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V
Description: ECOGAN?, 650V 27A TOLL-8N, E-MOD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V
Power Dissipation (Max): 159W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 5V, 6V
Vgs (Max): +6.5V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V
на замовлення 1616 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 898.76 грн |
| 10+ | 603.09 грн |
| 100+ | 487.81 грн |
| RS6P100BGTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 100A, HSOP8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Description: NCH 100V 100A, HSOP8, POWER MOSF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 70.66 грн |
| RS6P100BGTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 100A, HSOP8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Description: NCH 100V 100A, HSOP8, POWER MOSF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 228.65 грн |
| 10+ | 143.31 грн |
| 100+ | 99.37 грн |
| 500+ | 75.64 грн |
| 1000+ | 73.82 грн |
| TLR2371YG-CTR |
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Виробник: Rohm Semiconductor
Description: TLR; SERIES, AUTOMOTIVE LOW NOIS
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Single Ended, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.13mA
Slew Rate: 3V/µs
Gain Bandwidth Product: 5 MHz
Current - Input Bias: 2.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 22 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: TLR; SERIES, AUTOMOTIVE LOW NOIS
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Single Ended, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.13mA
Slew Rate: 3V/µs
Gain Bandwidth Product: 5 MHz
Current - Input Bias: 2.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 22 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
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| TLR2371YG-CTR |
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Виробник: Rohm Semiconductor
Description: TLR; SERIES, AUTOMOTIVE LOW NOIS
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Single Ended, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.13mA
Slew Rate: 3V/µs
Gain Bandwidth Product: 5 MHz
Current - Input Bias: 2.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 22 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: TLR; SERIES, AUTOMOTIVE LOW NOIS
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Single Ended, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.13mA
Slew Rate: 3V/µs
Gain Bandwidth Product: 5 MHz
Current - Input Bias: 2.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 22 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
на замовлення 2967 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.13 грн |
| 10+ | 41.06 грн |
| 25+ | 36.97 грн |
| 100+ | 30.47 грн |
| 250+ | 28.46 грн |
| 500+ | 27.25 грн |
| 1000+ | 25.88 грн |
| SCT4065DWATL |
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Виробник: Rohm Semiconductor
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 251.57 грн |
| SCT4065DWATL |
![]() |
Виробник: Rohm Semiconductor
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 614.73 грн |
| 10+ | 404.01 грн |
| 100+ | 297.66 грн |
| 500+ | 278.26 грн |
| SCT4090KWATL |
![]() |
Виробник: Rohm Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 257.28 грн |
| SCT4090KWATL |
![]() |
Виробник: Rohm Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 625.02 грн |
| 10+ | 411.33 грн |
| 100+ | 303.37 грн |
| 500+ | 284.59 грн |
| SCT4065DWAHRTL |
![]() |
Виробник: Rohm Semiconductor
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Qualification: AEC-Q101
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SCT4065DWAHRTL |
![]() |
Виробник: Rohm Semiconductor
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Qualification: AEC-Q101
Description: 750V, 22A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 6.15mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1066 pF @ 500 V
Qualification: AEC-Q101
на замовлення 997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 629.77 грн |
| 10+ | 413.92 грн |
| 100+ | 305.62 грн |
| SCT4090KWAHRTL |
![]() |
Виробник: Rohm Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Qualification: AEC-Q101
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SCT4090KWAHRTL |
![]() |
Виробник: Rohm Semiconductor
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Qualification: AEC-Q101
Description: 1200V, 17A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.3A, 18V
Power Dissipation (Max): 71W
Vgs(th) (Max) @ Id: 4.8V @ 4.44mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1026 pF @ 800 V
Qualification: AEC-Q101
на замовлення 997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 640.05 грн |
| 10+ | 421.39 грн |
| 100+ | 312.56 грн |
| SCT4036DWATL |
![]() |
Виробник: Rohm Semiconductor
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 368.56 грн |
| SCT4036DWATL |
![]() |
Виробник: Rohm Semiconductor
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 822.02 грн |
| 10+ | 549.00 грн |
| 100+ | 434.41 грн |
| SCT4036DWAHRTL |
![]() |
Виробник: Rohm Semiconductor
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 380.00 грн |
| SCT4036DWAHRTL |
![]() |
Виробник: Rohm Semiconductor
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
Description: 750V, 38A, 7-PIN SMD, TRENCH-STR
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1794 pF @ 500 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 841.80 грн |
| 10+ | 562.71 грн |
| 100+ | 447.88 грн |
| SCT4036KWATL |
![]() |
Виробник: Rohm Semiconductor
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
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| SCT4036KWATL |
![]() |
Виробник: Rohm Semiconductor
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Description: 1200V, 40A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
на замовлення 961 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1083.89 грн |
| 10+ | 735.27 грн |
| 100+ | 622.15 грн |
| SCT4018KWATL |
![]() |
Виробник: Rohm Semiconductor
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 1064.51 грн |
| SCT4018KWATL |
![]() |
Виробник: Rohm Semiconductor
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
Description: 1200V, 75A, 7-PIN SMD, TRENCH-ST
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 267W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-263-7LA
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1875.85 грн |
| 10+ | 1314.21 грн |
| 100+ | 1254.70 грн |
| RS7P200BMTB1 |
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Виробник: Rohm Semiconductor
Description: NCH 100V 200A, DFN5060-8S, WIDE-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DFN5060-8S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 50 V
Description: NCH 100V 200A, DFN5060-8S, WIDE-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DFN5060-8S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 50 V
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| RS7P200BMTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: NCH 100V 200A, DFN5060-8S, WIDE-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DFN5060-8S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 50 V
Description: NCH 100V 200A, DFN5060-8S, WIDE-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DFN5060-8S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 50 V
на замовлення 1082 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 360.77 грн |
| 10+ | 231.00 грн |
| 100+ | 164.62 грн |
| 500+ | 136.95 грн |
| GMR50HJBFGR018 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 18M OHM 1% 4W 2010
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 2010 (5025 Metric)
Temperature Coefficient: ±25ppm/°C
Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Number of Terminations: 2
Supplier Device Package: 2010
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 18 mOhms
Description: RES 18M OHM 1% 4W 2010
Packaging: Tape & Reel (TR)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 2010 (5025 Metric)
Temperature Coefficient: ±25ppm/°C
Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Number of Terminations: 2
Supplier Device Package: 2010
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 18 mOhms
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| GMR50HJBFGR018 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 18M OHM 1% 4W 2010
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 2010 (5025 Metric)
Temperature Coefficient: ±25ppm/°C
Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Number of Terminations: 2
Supplier Device Package: 2010
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 18 mOhms
Description: RES 18M OHM 1% 4W 2010
Packaging: Cut Tape (CT)
Power (Watts): 4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: 2010 (5025 Metric)
Temperature Coefficient: ±25ppm/°C
Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Composition: Metal Element
Operating Temperature: -65°C ~ 170°C
Number of Terminations: 2
Supplier Device Package: 2010
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 18 mOhms
на замовлення 1988 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.12 грн |
| 10+ | 84.57 грн |
| 25+ | 72.83 грн |
| 50+ | 61.45 грн |
| 100+ | 55.59 грн |
| 250+ | 49.16 грн |
| 500+ | 44.40 грн |
| 1000+ | 41.04 грн |
| ESR18EZPF91R0 |
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Виробник: Rohm Semiconductor
Description: RES 91 OHM 1% 3/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 Ohms
Description: RES 91 OHM 1% 3/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 Ohms
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| ESR18EZPF91R0 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 91 OHM 1% 3/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 Ohms
Description: RES 91 OHM 1% 3/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.75W, 3/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 Ohms
на замовлення 2686 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 54+ | 5.71 грн |
| 69+ | 4.45 грн |
| 81+ | 3.53 грн |
| 100+ | 3.02 грн |
| 250+ | 2.51 грн |
| 500+ | 2.18 грн |
| 1000+ | 1.95 грн |
| BST91B1P4K01-VC |
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Виробник: Rohm Semiconductor
Description: HSDIP20, 750V, 90A, FULL-BRIDGE,
Packaging: Box
Package / Case: 20-PowerDIP Module (1.508", 38.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V
Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: 20-HSDIP
Description: HSDIP20, 750V, 90A, FULL-BRIDGE,
Packaging: Box
Package / Case: 20-PowerDIP Module (1.508", 38.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V
Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: 20-HSDIP
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6502.57 грн |
| BST91T1P4K01-VC |
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Виробник: Rohm Semiconductor
Description: HSDIP20, 750V, 90A, 3-PHASE-BRID
Packaging: Box
Package / Case: 20-PowerDIP Module (1.508", 38.30mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V
Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: 20-HSDIP
Description: HSDIP20, 750V, 90A, 3-PHASE-BRID
Packaging: Box
Package / Case: 20-PowerDIP Module (1.508", 38.30mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 385W (Tc)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4580pF @ 500V
Rds On (Max) @ Id, Vgs: 19mOhm @ 91A, 18V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 18V
Vgs(th) (Max) @ Id: 4.8V @ 30.8mA
Supplier Device Package: 20-HSDIP
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| BD521VNVX-2CTL |
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Виробник: Rohm Semiconductor
Description: NANO ENERGY, 0.965V, ADJUSTABLE
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 0.965V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
Description: NANO ENERGY, 0.965V, ADJUSTABLE
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 0.965V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
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| BD521VNVX-2CTL |
![]() |
Виробник: Rohm Semiconductor
Description: NANO ENERGY, 0.965V, ADJUSTABLE
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 0.965V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
Description: NANO ENERGY, 0.965V, ADJUSTABLE
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C
Number of Voltages Monitored: 1
Reset Timeout: 27.7ms Minimum
Voltage - Threshold: 0.965V
Supplier Device Package: SSON004R1010
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.18 грн |
| 13+ | 25.22 грн |
| 25+ | 22.61 грн |
| 100+ | 18.46 грн |
| 250+ | 17.15 грн |
| 500+ | 16.36 грн |
| 1000+ | 15.45 грн |
| 2500+ | 15.18 грн |
| BU31TD2WNVX-TL |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 3.1V 200MA 4SSON
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.46V @ 200mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 3.1V 200MA 4SSON
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.46V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 17.48 грн |
| BU31TD2WNVX-TL |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 3.1V 200MA 4SSON
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.46V @ 200mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 3.1V 200MA 4SSON
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.46V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.35 грн |
| 12+ | 27.20 грн |
| 25+ | 24.35 грн |
| 100+ | 19.92 грн |
| 250+ | 18.52 грн |
| 500+ | 17.67 грн |
| 1000+ | 16.70 грн |
| 2500+ | 16.46 грн |
| BU1BTD2WNVX-TL |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.15V 200MA 4SSON
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 1.15V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.1V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 1.15V 200MA 4SSON
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 1.15V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 1.1V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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| BU2JTD2WNVX-TL |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 2.85V 200MA 4SSON
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 2.85V 200MA 4SSON
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SSON004X1010
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
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| LTR18EZPD47R0 |
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Виробник: Rohm Semiconductor
Description: WIDE TERMINAL RES 1206, 0,5%
Packaging: Tape & Reel (TR)
Power (Watts): 0.75W, 3/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Resistance: 47 Ohms
Description: WIDE TERMINAL RES 1206, 0,5%
Packaging: Tape & Reel (TR)
Power (Watts): 0.75W, 3/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 1206 (3216 Metric), 0612
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0612
Height - Seated (Max): 0.027" (0.68mm)
Resistance: 47 Ohms
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| MCH155A8R2DK |
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Виробник: Rohm Semiconductor
Description: CAP CER 8.2PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±0.5pF
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.022" (0.55mm)
Capacitance: 8.2 pF
Description: CAP CER 8.2PF 50V C0G/NP0 0402
Packaging: Tape & Reel (TR)
Tolerance: ±0.5pF
Voltage - Rated: 50V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.022" (0.55mm)
Capacitance: 8.2 pF
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| UMZ6.8NFMT106 |
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Виробник: Rohm Semiconductor
Description: 5V, 200MW, HIGHLY RELIABLE, TRAN
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Description: 5V, 200MW, HIGHLY RELIABLE, TRAN
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.80 грн |
| UMZ6.8NFMT106 |
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Виробник: Rohm Semiconductor
Description: 5V, 200MW, HIGHLY RELIABLE, TRAN
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Description: 5V, 200MW, HIGHLY RELIABLE, TRAN
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.60 грн |
| 15+ | 20.95 грн |
| 100+ | 13.29 грн |
| 500+ | 9.35 грн |
| 1000+ | 8.34 грн |
| UMZ6.8NFMFHT106 |
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Виробник: Rohm Semiconductor
Description: 5V, 200MW, AUTOMOTIVE TRANSIENT
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 5V, 200MW, AUTOMOTIVE TRANSIENT
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.08 грн |
| UMZ6.8NFMFHT106 |
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Виробник: Rohm Semiconductor
Description: 5V, 200MW, AUTOMOTIVE TRANSIENT
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 5V, 200MW, AUTOMOTIVE TRANSIENT
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C
Applications: General Purpose
Capacitance @ Frequency: 28pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UMD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.47V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.35 грн |
| 13+ | 24.00 грн |
| 100+ | 15.30 грн |
| 500+ | 10.81 грн |
| 1000+ | 9.67 грн |
| BD7LS02ZG-CTL |
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Виробник: Rohm Semiconductor
Description: AUTOMOTIVE SINGLE 2-INPUT NOR GA
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
Description: AUTOMOTIVE SINGLE 2-INPUT NOR GA
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
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| BD7LS02ZG-CTL |
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Виробник: Rohm Semiconductor
Description: AUTOMOTIVE SINGLE 2-INPUT NOR GA
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
Description: AUTOMOTIVE SINGLE 2-INPUT NOR GA
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
на замовлення 2897 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.86 грн |
| 15+ | 20.80 грн |
| 25+ | 18.53 грн |
| 100+ | 15.08 грн |
| 250+ | 13.98 грн |
| 500+ | 13.32 грн |
| 1000+ | 12.62 грн |
| BA3474F-E2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 8mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 8mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
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| BA3474F-E2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 8mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 8mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 100 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 36 V
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.94 грн |
| 10+ | 119.31 грн |
| 25+ | 108.98 грн |
| 100+ | 91.65 грн |
| 250+ | 86.58 грн |
| 500+ | 83.52 грн |
| 1000+ | 79.68 грн |
| ESD6V8ASAFHT2RB |
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Виробник: Rohm Semiconductor
Description: 5V, 180W, AUTOMOTIVE TRANSIENT V
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2W
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 180W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 5V, 180W, AUTOMOTIVE TRANSIENT V
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2W
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 180W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| ESD6V8ASAFHT2RB |
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Виробник: Rohm Semiconductor
Description: 5V, 180W, AUTOMOTIVE TRANSIENT V
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2W
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 180W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 5V, 180W, AUTOMOTIVE TRANSIENT V
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006-2W
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 180W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| RGW40TS65GC13 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A TO-247GE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-247GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/76ns
Switching Energy: 330µJ (on), 300µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 59 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 136 W
Description: IGBT TRENCH FS 650V 40A TO-247GE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-247GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/76ns
Switching Energy: 330µJ (on), 300µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 59 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 136 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 345.74 грн |
| 10+ | 220.63 грн |
| 120+ | 153.29 грн |
| 600+ | 119.48 грн |
| RGW40TS65DGC13 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A TO-247GE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-247GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/76ns
Switching Energy: 330µJ (on), 300µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 59 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 136 W
Description: IGBT TRENCH FS 650V 40A TO-247GE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-247GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/76ns
Switching Energy: 330µJ (on), 300µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 59 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 136 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 402.70 грн |
| 30+ | 218.83 грн |
| 120+ | 181.67 грн |
| 510+ | 144.91 грн |






















