Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (98822) > Сторінка 1463 з 1648
| Фото | Назва | Виробник | Інформація |
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| RBR2MM60ATFTR | ROHM SEMICONDUCTOR |
 RBR2MM60ATFTR SMD Schottky diodes |
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| RBR2MM60ATR | ROHM SEMICONDUCTOR |
RBR2MM60ATR SMD Schottky diodes |
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| RBR2MM60BTFTR | ROHM SEMICONDUCTOR |
RBR2MM60BTFTR SMD Schottky diodes |
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| RBR2MM60BTR | ROHM SEMICONDUCTOR |
RBR2MM60BTR SMD Schottky diodes |
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| RBR2MM60CTFTR | ROHM SEMICONDUCTOR | RBR2MM60CTFTR SMD Schottky diodes |
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| RBR2MM60CTR | ROHM SEMICONDUCTOR |
RBR2MM60CTR SMD Schottky diodes |
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RBR3L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; DO214AC,SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.69V Case: DO214AC; SMA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 30A кількість в упаковці: 5 шт |
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RBR3L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; DO214AC,SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 50A Leakage current: 0.15mA Kind of package: reel; tape кількість в упаковці: 5 шт |
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| RBR3LAM30ATFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape Max. forward impulse current: 40A Max. forward voltage: 0.58V Leakage current: 50µA кількість в упаковці: 5 шт |
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| RBR3LAM30BTFTR | ROHM SEMICONDUCTOR |
RBR3LAM30BTFTR SMD Schottky diodes |
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| RBR3LAM40ATFTR | ROHM SEMICONDUCTOR |
RBR3LAM40ATFTR SMD Schottky diodes |
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| RBR3LAM40ATR | ROHM SEMICONDUCTOR |
RBR3LAM40ATR SMD Schottky diodes |
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| RBR3LAM40CTFTR | ROHM SEMICONDUCTOR | RBR3LAM40CTFTR SMD Schottky diodes |
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| RBR3LAM40CTR | ROHM SEMICONDUCTOR | RBR3LAM40CTR SMD Schottky diodes |
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| RBR3LAM60ATFTR | ROHM SEMICONDUCTOR |
RBR3LAM60ATFTR SMD Schottky diodes |
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| RBR3LAM60ATR | ROHM SEMICONDUCTOR | RBR3LAM60ATR SMD Schottky diodes |
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| RBR3LAM60BTFTR | ROHM SEMICONDUCTOR |
RBR3LAM60BTFTR SMD Schottky diodes |
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| RBR3LAM60BTR | ROHM SEMICONDUCTOR |
RBR3LAM60BTR SMD Schottky diodes |
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RBR3MM30ATFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.51V Case: SOD123F Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 30A кількість в упаковці: 5 шт |
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RBR3MM30ATR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.51V Case: SOD123F Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 30A кількість в упаковці: 5 шт |
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RBR3MM40ATFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.62V Case: SOD123F Kind of package: reel; tape Leakage current: 80µA Max. forward impulse current: 30A кількість в упаковці: 5 шт |
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RBR3MM40ATR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.62V Case: SOD123F Kind of package: reel; tape Leakage current: 80µA Max. forward impulse current: 30A кількість в упаковці: 5 шт |
на замовлення 1945 шт: термін постачання 7-14 дні (днів) |
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RBR3MM40BTFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Max. forward impulse current: 30A Leakage current: 0.1mA Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward voltage: 0.58V Load current: 3A Semiconductor structure: single diode кількість в упаковці: 5 шт |
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RBR3MM40BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123F; reel,tape Mounting: SMD Case: SOD123F Kind of package: reel; tape Max. forward impulse current: 30A Leakage current: 0.1mA Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward voltage: 0.58V Load current: 3A Semiconductor structure: single diode кількість в упаковці: 5 шт |
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RBR3MM60ATFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.66V Case: SOD123F Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 30A кількість в упаковці: 5 шт |
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RBR3MM60ATR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.66V Case: SOD123F Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 30A кількість в упаковці: 5 шт |
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RBR3MM60BTFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.61V Case: SOD123F Kind of package: reel; tape Leakage current: 120µA Max. forward impulse current: 30A кількість в упаковці: 5 шт |
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RBR3MM60BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.61V Case: SOD123F Kind of package: reel; tape Leakage current: 120µA Max. forward impulse current: 30A кількість в упаковці: 5 шт |
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| RBR40NS60AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 20Ax2; D2PAK,SC83,TO263S Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Case: D2PAK; SC83; TO263S Kind of package: reel; tape Leakage current: 0.8mA Max. forward impulse current: 100A кількість в упаковці: 1 шт |
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| RBR5L40ADDTE25 | ROHM SEMICONDUCTOR | RBR5L40ADDTE25 SMD Schottky diodes |
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| RBR5LAM30ATFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 5A; SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 5A Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape Max. forward impulse current: 75A Max. forward voltage: 0.53V Leakage current: 0.1mA кількість в упаковці: 5 шт |
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| RBR5LAM30ATR | ROHM SEMICONDUCTOR |
RBR5LAM30ATR SMD Schottky diodes |
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| RBR5LAM30BTFTR | ROHM SEMICONDUCTOR | RBR5LAM30BTFTR SMD Schottky diodes |
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| RBR5LAM30BTR | ROHM SEMICONDUCTOR | RBR5LAM30BTR SMD Schottky diodes |
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| RBR5LAM40ATFTR | ROHM SEMICONDUCTOR |
RBR5LAM40ATFTR SMD Schottky diodes |
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| RBR5LAM40ATR | ROHM SEMICONDUCTOR | RBR5LAM40ATR SMD Schottky diodes |
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| RBR5LAM60ATFTR | ROHM SEMICONDUCTOR |
RBR5LAM60ATFTR SMD Schottky diodes |
на замовлення 1031 шт: термін постачання 7-14 дні (днів) |
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| RBR5LAM60ATR | ROHM SEMICONDUCTOR |
RBR5LAM60ATR SMD Schottky diodes |
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| RBS1LAM40ATR | ROHM SEMICONDUCTOR |
RBS1LAM40ATR SMD Schottky diodes |
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| RBS1MM40ATR | ROHM SEMICONDUCTOR |
RBS1MM40ATR SMD Schottky diodes |
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| RBS2LAM40CTR | ROHM SEMICONDUCTOR |
RBS2LAM40CTR SMD Schottky diodes |
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| RBS3LAM40BTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 3A; SOD128; reel,tape Mounting: SMD Case: SOD128 Kind of package: reel; tape Max. forward impulse current: 60A Leakage current: 0.6mA Type of diode: Schottky rectifying Max. off-state voltage: 20V Max. forward voltage: 0.45V Load current: 3A Semiconductor structure: single diode кількість в упаковці: 5 шт |
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| RCJ120N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 52W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A Drain-source voltage: 200V Drain current: 12A On-state resistance: 0.79Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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| RCJ160N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 85W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RCJ200N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 80A; 106W; D2PAK Case: D2PAK Drain-source voltage: 200V Drain current: 20A On-state resistance: 0.31Ω Type of transistor: N-MOSFET Power dissipation: 106W Polarisation: unipolar Kind of package: reel; tape Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Mounting: SMD кількість в упаковці: 1 шт |
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| RCJ220N25TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 166W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 22A Pulsed drain current: 88A Power dissipation: 166W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RCJ330N25TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 211W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 250V Drain current: 33A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Power dissipation: 211W Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A кількість в упаковці: 1 шт |
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| RCJ510N25TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Pulsed drain current: 160A Drain-source voltage: 250V Drain current: 51A On-state resistance: 155mΩ Type of transistor: N-MOSFET Power dissipation: 304W Polarisation: unipolar Gate charge: 0.12µC Kind of channel: enhanced Gate-source voltage: ±30V кількість в упаковці: 1000 шт |
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| RCJ700N20TL | ROHM SEMICONDUCTOR |
RCJ700N20TL SMD N channel transistors |
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| RCX081N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 8A; Idm: 32A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 8A Pulsed drain current: 32A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 8.5nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RCX160N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RCX200N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 80A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Pulsed drain current: 80A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RCX220N25 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 22A Pulsed drain current: 88A Power dissipation: 61W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RCX300N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 30A; Idm: 120A; 61W; TO220FP Mounting: THT Case: TO220FP Kind of package: tube Drain-source voltage: 200V Drain current: 30A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 61W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A кількість в упаковці: 1 шт |
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| RCX330N25 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Drain-source voltage: 250V Drain current: 33A On-state resistance: 0.23Ω Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 132A кількість в упаковці: 1 шт |
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| RCX450N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 45A Pulsed drain current: 180A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RCX511N25 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 204A; 84W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 51A Pulsed drain current: 204A Power dissipation: 84W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 155mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| RD3G01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -15A On-state resistance: 49mΩ Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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| RD3G03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -35A On-state resistance: 24mΩ Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
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| RD3G07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -70A On-state resistance: 8.7mΩ Type of transistor: P-MOSFET кількість в упаковці: 2500 шт |
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| RBR3L40ADDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; DO214AC,SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.69V
Case: DO214AC; SMA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; DO214AC,SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.69V
Case: DO214AC; SMA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
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| RBR3L60BDDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; DO214AC,SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; DO214AC,SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
| RBR3LAM30ATFTR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.58V
Leakage current: 50µA
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Max. forward impulse current: 40A
Max. forward voltage: 0.58V
Leakage current: 50µA
кількість в упаковці: 5 шт
товар відсутній
| RBR3MM30ATFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
товар відсутній
| RBR3MM30ATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.51V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
товар відсутній
| RBR3MM40ATFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 80µA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 80µA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
товар відсутній
| RBR3MM40ATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 80µA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 80µA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
на замовлення 1945 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 14.49 грн |
| 30+ | 9.41 грн |
| 100+ | 7.25 грн |
| 160+ | 6.26 грн |
| 440+ | 5.93 грн |
| RBR3MM40BTFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 30A
Leakage current: 0.1mA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.58V
Load current: 3A
Semiconductor structure: single diode
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 30A
Leakage current: 0.1mA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.58V
Load current: 3A
Semiconductor structure: single diode
кількість в упаковці: 5 шт
товар відсутній
| RBR3MM40BTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 30A
Leakage current: 0.1mA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.58V
Load current: 3A
Semiconductor structure: single diode
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SOD123F; reel,tape
Mounting: SMD
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 30A
Leakage current: 0.1mA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward voltage: 0.58V
Load current: 3A
Semiconductor structure: single diode
кількість в упаковці: 5 шт
товар відсутній
| RBR3MM60ATFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
товар відсутній
| RBR3MM60ATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
товар відсутній
| RBR3MM60BTFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 120µA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 120µA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
товар відсутній
| RBR3MM60BTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 120µA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Case: SOD123F
Kind of package: reel; tape
Leakage current: 120µA
Max. forward impulse current: 30A
кількість в упаковці: 5 шт
товар відсутній
| RBR40NS60AFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 20Ax2; D2PAK,SC83,TO263S
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Case: D2PAK; SC83; TO263S
Kind of package: reel; tape
Leakage current: 0.8mA
Max. forward impulse current: 100A
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 20Ax2; D2PAK,SC83,TO263S
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Case: D2PAK; SC83; TO263S
Kind of package: reel; tape
Leakage current: 0.8mA
Max. forward impulse current: 100A
кількість в упаковці: 1 шт
товар відсутній
| RBR5LAM30ATFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 0.53V
Leakage current: 0.1mA
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 5A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Max. forward impulse current: 75A
Max. forward voltage: 0.53V
Leakage current: 0.1mA
кількість в упаковці: 5 шт
товар відсутній
| RBR5LAM60ATFTR |
|
Виробник: ROHM SEMICONDUCTOR
RBR5LAM60ATFTR SMD Schottky diodes
RBR5LAM60ATFTR SMD Schottky diodes
на замовлення 1031 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.43 грн |
| 65+ | 15.52 грн |
| 178+ | 14.67 грн |
| RBS3LAM40BTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Max. forward impulse current: 60A
Leakage current: 0.6mA
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward voltage: 0.45V
Load current: 3A
Semiconductor structure: single diode
кількість в упаковці: 5 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 3A; SOD128; reel,tape
Mounting: SMD
Case: SOD128
Kind of package: reel; tape
Max. forward impulse current: 60A
Leakage current: 0.6mA
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Max. forward voltage: 0.45V
Load current: 3A
Semiconductor structure: single diode
кількість в упаковці: 5 шт
товар відсутній
| RCJ120N20TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Drain-source voltage: 200V
Drain current: 12A
On-state resistance: 0.79Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Drain-source voltage: 200V
Drain current: 12A
On-state resistance: 0.79Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RCJ160N20TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RCJ200N20TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 80A; 106W; D2PAK
Case: D2PAK
Drain-source voltage: 200V
Drain current: 20A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 106W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 80A; 106W; D2PAK
Case: D2PAK
Drain-source voltage: 200V
Drain current: 20A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 106W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 40nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 80A
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| RCJ220N25TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 166W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 166W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 166W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 166W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RCJ330N25TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 211W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 250V
Drain current: 33A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Power dissipation: 211W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 211W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 250V
Drain current: 33A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Power dissipation: 211W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
кількість в упаковці: 1 шт
товар відсутній
| RCJ510N25TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 160A
Drain-source voltage: 250V
Drain current: 51A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 304W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 160A
Drain-source voltage: 250V
Drain current: 51A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 304W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1000 шт
товар відсутній
| RCX081N20 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 8A; Idm: 32A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 8A; Idm: 32A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 8.5nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RCX160N20 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RCX200N20 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 80A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 80A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RCX220N25 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 61W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 61W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RCX300N20 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; Idm: 120A; 61W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain-source voltage: 200V
Drain current: 30A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 61W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; Idm: 120A; 61W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain-source voltage: 200V
Drain current: 30A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 61W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
кількість в упаковці: 1 шт
товар відсутній
| RCX330N25 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 250V
Drain current: 33A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; Idm: 132A; 40W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 250V
Drain current: 33A
On-state resistance: 0.23Ω
Type of transistor: N-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 132A
кількість в упаковці: 1 шт
товар відсутній
| RCX450N20 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RCX511N25 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 204A; 84W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 51A
Pulsed drain current: 204A
Power dissipation: 84W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 204A; 84W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 51A
Pulsed drain current: 204A
Power dissipation: 84W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| RD3G01BATTL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -15A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -15A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RD3G03BATTL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
товар відсутній
| RD3G07BATTL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 2500 шт
товар відсутній