Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102204) > Сторінка 1697 з 1704
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DTA013ZMT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT723 Collector current: 0.1A Power dissipation: 0.15W Current gain: 30 Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
на замовлення 975 шт: термін постачання 21-30 дні (днів) |
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DTA123YCAT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SOT23 Collector current: 0.1A Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 856 шт: термін постачання 21-30 дні (днів) |
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BA10393F-E2 | ROHM SEMICONDUCTOR |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA Mounting: SMT Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: comparator Kind of output: open collector Case: SO8 Kind of comparator: universal Input offset current: 50nA Input offset voltage: 5mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 2 |
на замовлення 2098 шт: термін постачання 21-30 дні (днів) |
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| BA4584FV-E2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape Kind of package: reel; tape Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: 4 Integrated circuit features: low noise Case: SSOP-B14 Operating temperature: -40...85°C Input offset current: 200nA Input bias current: 0.5µA Input offset voltage: 3mV Voltage supply range: ± 2...16V DC; 4...32V DC Slew rate: 5V/μs Bandwidth: 10MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BA4584YFV-MGE2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape Kind of package: reel; tape Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: 4 Integrated circuit features: low noise Case: SSOP-B14 Operating temperature: -40...105°C Input offset current: 200nA Input bias current: 0.5µA Input offset voltage: 3mV Voltage supply range: ± 2...16V DC; 4...32V DC Slew rate: 5V/μs Bandwidth: 10MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CDZVT2R3.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 100mW; 3.3V; SMD; reel,tape; SOD923; single diode Type of diode: Zener Power dissipation: 0.1W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD923 Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| EDZVT2R3.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 3.3V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KDZVTFTR3.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 3.3V; SMD; reel,tape; SOD123F; single diode; 80uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.3V Mounting: SMD Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 80µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| UDZVTE-173.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| EDZVFHT2R3.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 3.3V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| UDZVFHTE-173.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RQ3E150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15.3nC On-state resistance: 8.8mΩ Power dissipation: 17W Drain current: 39A Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RS1E150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 10nC On-state resistance: 13.3mΩ Power dissipation: 22W Drain current: 40A Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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EDZVT2R5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 5.1V Kind of package: reel; tape Case: SC79; SOD523F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 6430 шт: термін постачання 21-30 дні (днів) |
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BAV99HYT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RUQ050N02FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BU4312F-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Mounting: SMD Manufacturer series: BU43 Kind of package: reel; tape Operating temperature: -40...125°C Kind of RESET output: CMOS Active logical level: low Case: SSOP5 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Integrated circuit features: ±1% accuracy Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 1.2V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SC3906KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346 Kind of package: reel; tape Case: SC59; SOT346 Type of transistor: NPN Mounting: SMD Collector current: 50mA Power dissipation: 0.2W Current gain: 180...390 Collector-emitter voltage: 120V Frequency: 140MHz Polarisation: bipolar |
на замовлення 2785 шт: термін постачання 21-30 дні (днів) |
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RXH125N03TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RQ3E180AJTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 72A Power dissipation: 30W Case: HSMT8 Gate-source voltage: ±12V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1196 шт: термін постачання 21-30 дні (днів) |
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BD9G341AEFJ-E2 | ROHM SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 12÷76VDC; Uout: 1÷76VDC; 3A; HTSSOP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: HTSSOP8 Mounting: SMD Operating temperature: -40...85°C Topology: buck Kind of package: reel; tape Number of channels: 1 Output voltage: 1...76V DC Output current: 3A Input voltage: 12...76V DC Frequency: 750kHz |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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RB058L-60DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.64V Max. forward impulse current: 120A Kind of package: reel; tape Leakage current: 4µA |
на замовлення 880 шт: термін постачання 21-30 дні (днів) |
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RBR5L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.53V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.2mA |
на замовлення 1490 шт: термін постачання 21-30 дні (днів) |
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RB050L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.55V Max. forward impulse current: 70A Kind of package: reel; tape Leakage current: 1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB058L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 100A Kind of package: reel; tape Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB068L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCS106AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220AC; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. load current: 29A Max. forward impulse current: 86A Power dissipation: 65W Kind of package: tube Heatsink thickness: max. 1.27mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCS108AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. load current: 35A Max. forward impulse current: 110A Power dissipation: 75W Kind of package: tube Heatsink thickness: max. 1.27mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SC5824T100R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Case: SC62; SOT89 Power dissipation: 0.5W Collector current: 3A Collector-emitter voltage: 60V Current gain: 180...390 Frequency: 200MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DA204UT106 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A Semiconductor structure: double series Kind of package: reel; tape Case: SC70; SOT323 Mounting: SMD Type of diode: switching Load current: 0.1A Max. load current: 0.2A Power dissipation: 0.2W Max. forward impulse current: 0.3A Max. forward voltage: 1V Max. off-state voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RFN20NS4SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 430V; 20A; 30ns; D2PAK; Ufmax: 1.55V Type of diode: rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 430V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 1.55V Max. forward impulse current: 100A Kind of package: reel; tape Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RE1J002YNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT416F Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 528 шт: термін постачання 21-30 дні (днів) |
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SST3904T116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT23 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB531SM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.35V Leakage current: 10µA Max. forward impulse current: 1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTC143ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SML-812MTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; yellow green; SMD; 1305; 14÷40mcd; 2.1VDC; 3.4x1.25x1.1mm Case: 1305 Mounting: SMD LED lens: transparent LED colour: yellow green Wavelength: 569...575nm Power: 65mW Dimensions: 3.4x1.25x1.1mm Luminosity: 14...40mcd LED current: 20mA Operating voltage: 2.1V DC Front: flat Type of diode: LED |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
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UM6K31NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Pulsed drain current: 1A |
на замовлення 2847 шт: термін постачання 21-30 дні (днів) |
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| RS1G120MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 48A Drain current: 34A Drain-source voltage: 40V Gate charge: 9.4nC On-state resistance: 20.7mΩ Power dissipation: 25W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RS1G150MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 60A Drain current: 43A Drain-source voltage: 40V Gate charge: 15nC On-state resistance: 13.3mΩ Power dissipation: 25W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RS1G180MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 72A Drain current: 57A Drain-source voltage: 40V Gate charge: 19.5nC On-state resistance: 9.2mΩ Power dissipation: 30W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RS1G201ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -80A Drain current: -78A Drain-source voltage: -40V Gate charge: 130nC On-state resistance: 6.5mΩ Power dissipation: 40W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RS1G260MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 104A Drain current: 80A Drain-source voltage: 40V Gate charge: 44nC On-state resistance: 4.4mΩ Power dissipation: 35W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RS1G300GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 56.8nC On-state resistance: 3mΩ Power dissipation: 35W Drain current: 80A Pulsed drain current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RHP030N03T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 10A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
2SD1781KT146Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346 Case: SC59; SOT346 Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Collector current: 0.8A Power dissipation: 0.2W Collector-emitter voltage: 32V Current gain: 120...270 Frequency: 150MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BA10358F-E2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 500kHz; Ch: 2; SO8; 3÷32VDC; reel,tape Mounting: SMT Kind of package: reel; tape Number of channels: dual; 2 Type of integrated circuit: operational amplifier Operating temperature: -40...85°C Input offset current: 50nA Input bias current: 0.25µA Input offset voltage: 7mV Slew rate: 0.2V/μs Voltage supply range: 3...32V DC Bandwidth: 500kHz Case: SO8 |
на замовлення 2174 шт: термін постачання 21-30 дні (днів) |
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SLR-332MG3F | ROHM SEMICONDUCTOR |
Category: THT LEDs RoundDescription: LED; yellow green; 3.2mm; 5.6÷16mcd; 85°; Front: convex; 2.1VDC Type of diode: LED LED colour: yellow green LED diameter: 3.2mm Luminosity: 5.6...16mcd Viewing angle: 85° Wavelength: 563nm LED lens: transparent LED current: 10mA Mounting: THT Front: convex Operating voltage: 2.1V DC Number of terminals: 2 Terminal pitch: 2.54mm |
на замовлення 2442 шт: термін постачання 21-30 дні (днів) |
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| RF501BM2SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A Case: DPAK Mounting: SMD Kind of package: reel; tape Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward voltage: 0.92V Load current: 5A Max. forward impulse current: 40A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RRD07MM4STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A Mounting: SMD Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F Load current: 0.7A Max. forward voltage: 0.98V Max. forward impulse current: 150A Max. off-state voltage: 0.4kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BV2HD045EFU-CE2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; Ch: 2; SMD; -40÷150°C; 6÷28V Protection: over current OCP; overheating OTP; undervoltage UVP Type of integrated circuit: power switch Mounting: SMD Operating temperature: -40...150°C On-state resistance: 0.1Ω Number of channels: 2 Supply voltage: 6...28V Kind of integrated circuit: high-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RB160MM-60TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 50µA |
на замовлення 4122 шт: термін постачання 21-30 дні (днів) |
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RB168MM-40TFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.65V Leakage current: 0.55µA Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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2SAR586D3TL1 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 5A; 10W; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 10W Case: DPAK; TO252 Current gain: 120...390 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 1036 шт: термін постачання 21-30 дні (днів) |
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| 2SAR573D3FRATL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 10W Case: DPAK; TO252 Current gain: 180...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2SAR573D3TL1 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 10W Case: DPAK; TO252 Current gain: 180...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DTB114ECT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 56 Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTB114EKT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 56 Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTB114GKT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base-emitter resistor: 10kΩ Current gain: 56 Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SB1198KT146Q | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SB1198KT146R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| DTA013ZMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
на замовлення 975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.10 грн |
| 120+ | 3.40 грн |
| 170+ | 2.39 грн |
| 500+ | 1.97 грн |
| DTA123YCAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 856 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.71 грн |
| 87+ | 4.69 грн |
| 129+ | 3.15 грн |
| 500+ | 2.48 грн |
| BA10393F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: comparator
Kind of output: open collector
Case: SO8
Kind of comparator: universal
Input offset current: 50nA
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA
Mounting: SMT
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: comparator
Kind of output: open collector
Case: SO8
Kind of comparator: universal
Input offset current: 50nA
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
на замовлення 2098 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.35 грн |
| 100+ | 23.78 грн |
| BA4584FV-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Integrated circuit features: low noise
Case: SSOP-B14
Operating temperature: -40...85°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 3mV
Voltage supply range: ± 2...16V DC; 4...32V DC
Slew rate: 5V/μs
Bandwidth: 10MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Integrated circuit features: low noise
Case: SSOP-B14
Operating temperature: -40...85°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 3mV
Voltage supply range: ± 2...16V DC; 4...32V DC
Slew rate: 5V/μs
Bandwidth: 10MHz
товару немає в наявності
В кошику
од. на суму грн.
| BA4584YFV-MGE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Integrated circuit features: low noise
Case: SSOP-B14
Operating temperature: -40...105°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 3mV
Voltage supply range: ± 2...16V DC; 4...32V DC
Slew rate: 5V/μs
Bandwidth: 10MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Integrated circuit features: low noise
Case: SSOP-B14
Operating temperature: -40...105°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 3mV
Voltage supply range: ± 2...16V DC; 4...32V DC
Slew rate: 5V/μs
Bandwidth: 10MHz
товару немає в наявності
В кошику
од. на суму грн.
| CDZVT2R3.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 3.3V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 3.3V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Leakage current: 20µA
товару немає в наявності
В кошику
од. на суму грн.
| EDZVT2R3.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 20µA
товару немає в наявності
В кошику
од. на суму грн.
| KDZVTFTR3.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; SOD123F; single diode; 80uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 80µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; SOD123F; single diode; 80uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 80µA
товару немає в наявності
В кошику
од. на суму грн.
| UDZVTE-173.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 20µA
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В кошику
од. на суму грн.
| EDZVFHT2R3.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 20µA
товару немає в наявності
В кошику
од. на суму грн.
| UDZVFHTE-173.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 20µA
товару немає в наявності
В кошику
од. на суму грн.
| RQ3E150GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 8.8mΩ
Power dissipation: 17W
Drain current: 39A
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 8.8mΩ
Power dissipation: 17W
Drain current: 39A
Pulsed drain current: 60A
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В кошику
од. на суму грн.
| RS1E150GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 13.3mΩ
Power dissipation: 22W
Drain current: 40A
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 13.3mΩ
Power dissipation: 22W
Drain current: 40A
Pulsed drain current: 60A
товару немає в наявності
В кошику
од. на суму грн.
| EDZVT2R5.1B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SC79; SOD523F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SC79; SOD523F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 6430 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.58 грн |
| 65+ | 6.31 грн |
| 100+ | 4.15 грн |
| 200+ | 3.65 грн |
| 500+ | 3.07 грн |
| 1000+ | 2.70 грн |
| 2000+ | 2.38 грн |
| 5000+ | 2.01 грн |
| BAV99HYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
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| RUQ050N02FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BU4312F-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Mounting: SMD
Manufacturer series: BU43
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Integrated circuit features: ±1% accuracy
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 1.2V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Mounting: SMD
Manufacturer series: BU43
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Integrated circuit features: ±1% accuracy
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 1.2V
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| 2SC3906KT146R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Case: SC59; SOT346
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.2W
Current gain: 180...390
Collector-emitter voltage: 120V
Frequency: 140MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Case: SC59; SOT346
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.2W
Current gain: 180...390
Collector-emitter voltage: 120V
Frequency: 140MHz
Polarisation: bipolar
на замовлення 2785 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.84 грн |
| 16+ | 26.69 грн |
| 18+ | 23.05 грн |
| 100+ | 13.18 грн |
| 500+ | 9.38 грн |
| 1000+ | 8.33 грн |
| RXH125N03TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RQ3E180AJTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 72A
Power dissipation: 30W
Case: HSMT8
Gate-source voltage: ±12V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 72A
Power dissipation: 30W
Case: HSMT8
Gate-source voltage: ±12V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1196 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.99 грн |
| 10+ | 41.16 грн |
| 100+ | 31.86 грн |
| 250+ | 29.84 грн |
| 500+ | 28.79 грн |
| BD9G341AEFJ-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 12÷76VDC; Uout: 1÷76VDC; 3A; HTSSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: HTSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: buck
Kind of package: reel; tape
Number of channels: 1
Output voltage: 1...76V DC
Output current: 3A
Input voltage: 12...76V DC
Frequency: 750kHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 12÷76VDC; Uout: 1÷76VDC; 3A; HTSSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: HTSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: buck
Kind of package: reel; tape
Number of channels: 1
Output voltage: 1...76V DC
Output current: 3A
Input voltage: 12...76V DC
Frequency: 750kHz
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 254.30 грн |
| 10+ | 179.53 грн |
| 25+ | 164.16 грн |
| RB058L-60DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.64V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 4µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.64V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 4µA
на замовлення 880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 54.87 грн |
| 12+ | 33.80 грн |
| 50+ | 26.69 грн |
| 100+ | 24.02 грн |
| 250+ | 20.78 грн |
| 500+ | 18.60 грн |
| RBR5L40ADDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.2mA
на замовлення 1490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.32 грн |
| 10+ | 47.47 грн |
| 25+ | 41.08 грн |
| 100+ | 32.59 грн |
| 500+ | 25.47 грн |
| 1000+ | 23.13 грн |
| RB050L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 1mA
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| RB058L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
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| RB068L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
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| SCS106AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 29A
Max. forward impulse current: 86A
Power dissipation: 65W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 29A
Max. forward impulse current: 86A
Power dissipation: 65W
Kind of package: tube
Heatsink thickness: max. 1.27mm
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| SCS108AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 35A
Max. forward impulse current: 110A
Power dissipation: 75W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 35A
Max. forward impulse current: 110A
Power dissipation: 75W
Kind of package: tube
Heatsink thickness: max. 1.27mm
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| 2SC5824T100R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Case: SC62; SOT89
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 180...390
Frequency: 200MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Case: SC62; SOT89
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 180...390
Frequency: 200MHz
Polarisation: bipolar
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| DA204UT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A
Semiconductor structure: double series
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 0.2A
Power dissipation: 0.2W
Max. forward impulse current: 0.3A
Max. forward voltage: 1V
Max. off-state voltage: 20V
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A
Semiconductor structure: double series
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 0.2A
Power dissipation: 0.2W
Max. forward impulse current: 0.3A
Max. forward voltage: 1V
Max. off-state voltage: 20V
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| RFN20NS4SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 20A; 30ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 430V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 30ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 20A; 30ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 430V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 30ns
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| RE1J002YNTCL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 528 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.03 грн |
| 31+ | 13.10 грн |
| 100+ | 7.34 грн |
| 500+ | 5.06 грн |
| SST3904T116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| RB531SM-30T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.35V
Leakage current: 10µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.35V
Leakage current: 10µA
Max. forward impulse current: 1A
Kind of package: reel; tape
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| DTC143ECAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT
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| SML-812MTT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow green; SMD; 1305; 14÷40mcd; 2.1VDC; 3.4x1.25x1.1mm
Case: 1305
Mounting: SMD
LED lens: transparent
LED colour: yellow green
Wavelength: 569...575nm
Power: 65mW
Dimensions: 3.4x1.25x1.1mm
Luminosity: 14...40mcd
LED current: 20mA
Operating voltage: 2.1V DC
Front: flat
Type of diode: LED
Category: SMD colour LEDs
Description: LED; yellow green; SMD; 1305; 14÷40mcd; 2.1VDC; 3.4x1.25x1.1mm
Case: 1305
Mounting: SMD
LED lens: transparent
LED colour: yellow green
Wavelength: 569...575nm
Power: 65mW
Dimensions: 3.4x1.25x1.1mm
Luminosity: 14...40mcd
LED current: 20mA
Operating voltage: 2.1V DC
Front: flat
Type of diode: LED
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.90 грн |
| 13+ | 32.91 грн |
| UM6K31NTN |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 1A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 1A
на замовлення 2847 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.35 грн |
| 18+ | 22.80 грн |
| 23+ | 18.20 грн |
| 100+ | 7.28 грн |
| 500+ | 5.50 грн |
| RS1G120MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 48A
Drain current: 34A
Drain-source voltage: 40V
Gate charge: 9.4nC
On-state resistance: 20.7mΩ
Power dissipation: 25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 48A
Drain current: 34A
Drain-source voltage: 40V
Gate charge: 9.4nC
On-state resistance: 20.7mΩ
Power dissipation: 25W
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| RS1G150MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 43A
Drain-source voltage: 40V
Gate charge: 15nC
On-state resistance: 13.3mΩ
Power dissipation: 25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 43A
Drain-source voltage: 40V
Gate charge: 15nC
On-state resistance: 13.3mΩ
Power dissipation: 25W
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| RS1G180MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 72A
Drain current: 57A
Drain-source voltage: 40V
Gate charge: 19.5nC
On-state resistance: 9.2mΩ
Power dissipation: 30W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 72A
Drain current: 57A
Drain-source voltage: 40V
Gate charge: 19.5nC
On-state resistance: 9.2mΩ
Power dissipation: 30W
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| RS1G201ATTB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -78A
Drain-source voltage: -40V
Gate charge: 130nC
On-state resistance: 6.5mΩ
Power dissipation: 40W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -78A
Drain-source voltage: -40V
Gate charge: 130nC
On-state resistance: 6.5mΩ
Power dissipation: 40W
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| RS1G260MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 104A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 44nC
On-state resistance: 4.4mΩ
Power dissipation: 35W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 104A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 44nC
On-state resistance: 4.4mΩ
Power dissipation: 35W
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| RS1G300GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56.8nC
On-state resistance: 3mΩ
Power dissipation: 35W
Drain current: 80A
Pulsed drain current: 120A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 56.8nC
On-state resistance: 3mΩ
Power dissipation: 35W
Drain current: 80A
Pulsed drain current: 120A
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| RHP030N03T100 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 10A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 10A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 2SD1781KT146Q |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Case: SC59; SOT346
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.8A
Power dissipation: 0.2W
Collector-emitter voltage: 32V
Current gain: 120...270
Frequency: 150MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Case: SC59; SOT346
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Collector current: 0.8A
Power dissipation: 0.2W
Collector-emitter voltage: 32V
Current gain: 120...270
Frequency: 150MHz
Polarisation: bipolar
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| BA10358F-E2 | ![]() |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 500kHz; Ch: 2; SO8; 3÷32VDC; reel,tape
Mounting: SMT
Kind of package: reel; tape
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Input offset current: 50nA
Input bias current: 0.25µA
Input offset voltage: 7mV
Slew rate: 0.2V/μs
Voltage supply range: 3...32V DC
Bandwidth: 500kHz
Case: SO8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 500kHz; Ch: 2; SO8; 3÷32VDC; reel,tape
Mounting: SMT
Kind of package: reel; tape
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Input offset current: 50nA
Input bias current: 0.25µA
Input offset voltage: 7mV
Slew rate: 0.2V/μs
Voltage supply range: 3...32V DC
Bandwidth: 500kHz
Case: SO8
на замовлення 2174 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.67 грн |
| 12+ | 33.72 грн |
| 14+ | 30.24 грн |
| 25+ | 26.69 грн |
| 100+ | 26.20 грн |
| 250+ | 23.29 грн |
| SLR-332MG3F |
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Виробник: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; yellow green; 3.2mm; 5.6÷16mcd; 85°; Front: convex; 2.1VDC
Type of diode: LED
LED colour: yellow green
LED diameter: 3.2mm
Luminosity: 5.6...16mcd
Viewing angle: 85°
Wavelength: 563nm
LED lens: transparent
LED current: 10mA
Mounting: THT
Front: convex
Operating voltage: 2.1V DC
Number of terminals: 2
Terminal pitch: 2.54mm
Category: THT LEDs Round
Description: LED; yellow green; 3.2mm; 5.6÷16mcd; 85°; Front: convex; 2.1VDC
Type of diode: LED
LED colour: yellow green
LED diameter: 3.2mm
Luminosity: 5.6...16mcd
Viewing angle: 85°
Wavelength: 563nm
LED lens: transparent
LED current: 10mA
Mounting: THT
Front: convex
Operating voltage: 2.1V DC
Number of terminals: 2
Terminal pitch: 2.54mm
на замовлення 2442 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.35 грн |
| 21+ | 20.14 грн |
| 72+ | 13.34 грн |
| 196+ | 12.62 грн |
| 500+ | 12.13 грн |
| RF501BM2SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward voltage: 0.92V
Load current: 5A
Max. forward impulse current: 40A
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward voltage: 0.92V
Load current: 5A
Max. forward impulse current: 40A
Max. off-state voltage: 200V
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| RRD07MM4STR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Load current: 0.7A
Max. forward voltage: 0.98V
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Load current: 0.7A
Max. forward voltage: 0.98V
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
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| BV2HD045EFU-CE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 2; SMD; -40÷150°C; 6÷28V
Protection: over current OCP; overheating OTP; undervoltage UVP
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 0.1Ω
Number of channels: 2
Supply voltage: 6...28V
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 2; SMD; -40÷150°C; 6÷28V
Protection: over current OCP; overheating OTP; undervoltage UVP
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 0.1Ω
Number of channels: 2
Supply voltage: 6...28V
Kind of integrated circuit: high-side
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| RB160MM-60TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
на замовлення 4122 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.51 грн |
| 28+ | 14.80 грн |
| 40+ | 11.81 грн |
| 100+ | 10.03 грн |
| 500+ | 7.44 грн |
| 1000+ | 6.71 грн |
| RB168MM-40TFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Leakage current: 0.55µA
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Leakage current: 0.55µA
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 50.14 грн |
| 2SAR586D3TL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 5A; 10W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 120...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 5A; 10W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 120...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 1036 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.73 грн |
| 10+ | 66.55 грн |
| 50+ | 50.70 грн |
| 100+ | 45.37 грн |
| 250+ | 39.22 грн |
| 500+ | 35.26 грн |
| 1000+ | 31.86 грн |
| 2SAR573D3FRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| 2SAR573D3TL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| DTB114ECT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Power dissipation: 0.2W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Power dissipation: 0.2W
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| DTB114EKT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Power dissipation: 0.2W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Power dissipation: 0.2W
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| DTB114GKT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base-emitter resistor: 10kΩ
Current gain: 56
Power dissipation: 0.2W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base-emitter resistor: 10kΩ
Current gain: 56
Power dissipation: 0.2W
товару немає в наявності
В кошику
од. на суму грн.
| 2SB1198KT146Q |
![]() |
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
товару немає в наявності
В кошику
од. на суму грн.
| 2SB1198KT146R |
![]() |
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
товару немає в наявності
В кошику
од. на суму грн.


















