Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102066) > Сторінка 1696 з 1702
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| RQ3E150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8 Case: HSMT8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15.3nC On-state resistance: 8.8mΩ Power dissipation: 17W Drain current: 39A Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RS1E150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8 Case: HSOP8 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 10nC On-state resistance: 13.3mΩ Power dissipation: 22W Drain current: 40A Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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EDZVT2R5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 5.1V Kind of package: reel; tape Case: SC79; SOD523F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 6430 шт: термін постачання 21-30 дні (днів) |
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BAV99HYT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RUQ050N02FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BU4312F-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Mounting: SMD Manufacturer series: BU43 Kind of package: reel; tape Operating temperature: -40...125°C Kind of RESET output: CMOS Active logical level: low Case: SSOP5 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Integrated circuit features: ±1% accuracy Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 1.2V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SC3906KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346 Kind of package: reel; tape Case: SC59; SOT346 Type of transistor: NPN Mounting: SMD Collector current: 50mA Power dissipation: 0.2W Current gain: 180...390 Collector-emitter voltage: 120V Frequency: 140MHz Polarisation: bipolar |
на замовлення 2764 шт: термін постачання 21-30 дні (днів) |
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RXH125N03TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RQ3E180AJTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 72A Power dissipation: 30W Case: HSMT8 Gate-source voltage: ±12V On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1196 шт: термін постачання 21-30 дні (днів) |
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SCS106AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220AC; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. load current: 29A Max. forward impulse current: 86A Power dissipation: 65W Kind of package: tube Heatsink thickness: max. 1.27mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCS108AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. load current: 35A Max. forward impulse current: 110A Power dissipation: 75W Kind of package: tube Heatsink thickness: max. 1.27mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SC5824T100R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89 Mounting: SMD Kind of package: reel; tape Type of transistor: NPN Case: SC62; SOT89 Power dissipation: 0.5W Collector current: 3A Collector-emitter voltage: 60V Current gain: 180...390 Frequency: 200MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DA204UT106 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A Semiconductor structure: double series Kind of package: reel; tape Case: SC70; SOT323 Mounting: SMD Type of diode: switching Load current: 0.1A Max. load current: 0.2A Power dissipation: 0.2W Max. forward impulse current: 0.3A Max. forward voltage: 1V Max. off-state voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RFN20NS4SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 430V; 20A; 30ns; D2PAK; Ufmax: 1.55V Type of diode: rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 430V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 1.55V Max. forward impulse current: 100A Kind of package: reel; tape Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SST3904T116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT23 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTC143ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RS1G120MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 48A Drain current: 34A Drain-source voltage: 40V Gate charge: 9.4nC On-state resistance: 20.7mΩ Power dissipation: 25W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RS1G150MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 60A Drain current: 43A Drain-source voltage: 40V Gate charge: 15nC On-state resistance: 13.3mΩ Power dissipation: 25W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RS1G180MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 72A Drain current: 57A Drain-source voltage: 40V Gate charge: 19.5nC On-state resistance: 9.2mΩ Power dissipation: 30W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RS1G201ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -80A Drain current: -78A Drain-source voltage: -40V Gate charge: 130nC On-state resistance: 6.5mΩ Power dissipation: 40W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RS1G260MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 104A Drain current: 80A Drain-source voltage: 40V Gate charge: 44nC On-state resistance: 4.4mΩ Power dissipation: 35W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RS1G300GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 120A Drain current: 80A Drain-source voltage: 40V Gate charge: 56.8nC On-state resistance: 3mΩ Power dissipation: 35W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RHP030N03T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 10A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BA10358F-E2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 500kHz; Ch: 2; SO8; 3÷32VDC; reel,tape Mounting: SMT Kind of package: reel; tape Number of channels: dual; 2 Type of integrated circuit: operational amplifier Operating temperature: -40...85°C Input offset current: 50nA Input bias current: 0.25µA Input offset voltage: 7mV Slew rate: 0.2V/μs Voltage supply range: 3...32V DC Bandwidth: 500kHz Case: SO8 |
на замовлення 2174 шт: термін постачання 21-30 дні (днів) |
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RRD07MM4STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A Mounting: SMD Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F Load current: 0.7A Max. forward voltage: 0.98V Max. forward impulse current: 150A Max. off-state voltage: 0.4kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB160MM-60TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Leakage current: 50µA Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 1897 шт: термін постачання 21-30 дні (днів) |
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| 2SAR573D3FRATL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 10W Case: DPAK; TO252 Current gain: 180...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 2SAR573D3TL1 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 10W Case: DPAK; TO252 Current gain: 180...450 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SB1198KT146Q | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SB1198KT146R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RF4E100AJTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 10A Pulsed drain current: 36A Power dissipation: 2W Case: DFN2020-8S Gate-source voltage: ±12V On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2830 шт: термін постачання 21-30 дні (днів) |
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| EDZVFHT2R36B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 36V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 36V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| EDZVT2R36B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 36V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 36V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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EMT1T2R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SOT563 Type of transistor: PNP x2 Polarisation: bipolar Power dissipation: 0.15W Case: SOT563 Mounting: SMD Kind of package: reel; tape Collector current: 0.15A Collector-emitter voltage: 50V Current gain: 120...560 Frequency: 140MHz |
на замовлення 3490 шт: термін постачання 21-30 дні (днів) |
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DTC113ZCAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Current gain: 33 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGS60TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 30A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 36nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 46ns Turn-off time: 290ns |
на замовлення 417 шт: термін постачання 21-30 дні (днів) |
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| SCT3080ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 75A Power dissipation: 134W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 0.104Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMLD12BN1WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; blue; SMD; 0603; 14÷40mcd; 2.9VDC; 1.6x0.8x0.55mm; 5mA; 66mW Mounting: SMD Wavelength: 470nm Dimensions: 1.6x0.8x0.55mm LED current: 5mA Luminosity: 14...40mcd Power: 66mW Operating voltage: 2.9V DC Case: 0603 LED colour: blue LED lens: diffused; white Front: flat Type of diode: LED |
на замовлення 3218 шт: термін постачання 21-30 дні (днів) |
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RQ3E100BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 15W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 15.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 22nC Pulsed drain current: 40A |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
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2SC4098T106P | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 50mA; 200mW; SC70,SOT323 Case: SC70; SOT323 Type of transistor: NPN Mounting: SMD Kind of package: reel; tape Collector current: 50mA Power dissipation: 0.2W Collector-emitter voltage: 25V Current gain: 82...180 Frequency: 300MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RHK003N06FRAT146 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 1.2A Power dissipation: 0.2W Case: SMT3 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RB085BGE-30TL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 5Ax2 Case: DPAK; SC63; TO252 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common cathode; double Type of diode: Schottky rectifying Leakage current: 0.3mA Max. forward voltage: 0.48V Load current: 5A x2 Max. off-state voltage: 30V Max. forward impulse current: 50A |
на замовлення 786 шт: термін постачання 21-30 дні (днів) |
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| RVQ040N05TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 4A Pulsed drain current: 16A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±21V On-state resistance: 74mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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R6030JNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO247 Gate-source voltage: ±30V On-state resistance: 143mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 74nC Power dissipation: 370W Pulsed drain current: 90A |
на замовлення 534 шт: термін постачання 21-30 дні (днів) |
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SML-311UTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; red; SMD; 0603; 0.9÷2.5mcd; 1.8VDC; 1.6x0.8x0.8mm; 2mA Type of diode: LED LED colour: red Mounting: SMD Case: 0603 Luminosity: 0.9...2.5mcd Operating voltage: 1.8V DC Dimensions: 1.6x0.8x0.8mm LED current: 2mA Wavelength: 620nm LED lens: transparent Front: flat |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SML-D12V1WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; red; SMD; 0603; 25÷40mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA; 54mW Type of diode: LED LED colour: red Mounting: SMD Front: flat LED current: 20mA LED lens: diffused; white Luminosity: 25...40mcd Operating voltage: 2.2V DC Dimensions: 1.6x0.8x0.55mm Power: 54mW Case: 0603 Wavelength: 625...635nm |
на замовлення 4340 шт: термін постачання 21-30 дні (днів) |
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| BD4850FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1 Supply voltage: 950mV DC...10V DC Mounting: SMD Operating temperature: -40...105°C Kind of RESET output: open drain Kind of package: reel; tape Case: VSOF5 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 5V Integrated circuit features: ±1% accuracy Manufacturer series: BD48 Active logical level: low |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BD4850G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Supply voltage: 950mV DC...10V DC Mounting: SMD Operating temperature: -40...105°C Kind of RESET output: open drain Kind of package: reel; tape Case: SSOP5 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 5V Integrated circuit features: ±1% accuracy Manufacturer series: BD48 Active logical level: low |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RCX160N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KDZLVTFTR100 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA Type of diode: Zener Power dissipation: 1W Zener voltage: 100V Kind of package: reel; tape Case: SOD123F Mounting: SMD Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SML-D12Y1WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; yellow; SMD; 0603; 63÷100mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA Type of diode: LED LED colour: yellow Mounting: SMD Case: 0603 Luminosity: 63...100mcd Operating voltage: 2.2V DC Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 587...593nm LED lens: transparent Power: 54mW Front: flat |
на замовлення 3737 шт: термін постачання 21-30 дні (днів) |
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SCS210KGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; 150W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.6V Max. load current: 50A Max. forward impulse current: 160A Power dissipation: 150W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IMX8T108 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457 Case: SC74; SOT457 Mounting: SMD Polarisation: bipolar Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 50mA Power dissipation: 0.3W Collector-emitter voltage: 120V Current gain: 180...820 Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA124EKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Power dissipation: 0.2W Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA124EU3T106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Power dissipation: 0.2W Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA124ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Power dissipation: 0.2W Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DTA124EETL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SC75A; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 56 Power dissipation: 0.15W Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BD5424EFS-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 20W; Ch: 2; Amp.class: D Type of integrated circuit: audio amplifier Amplifier class: D Number of channels: 2 Output power: 20W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
SH8J31GZETB | ROHM SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -4.5A; Idm: -18A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.5A Pulsed drain current: -18A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 85mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SCS315AHGC9 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220AC; Ir: 300uA Case: TO220AC Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 0.3mA Max. forward voltage: 1.71V Max. forward impulse current: 410A Max. off-state voltage: 650V Load current: 15A Max. load current: 64A Power dissipation: 93W Technology: SiC |
товару немає в наявності |
В кошику од. на суму грн. |
| RQ3E150GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 8.8mΩ
Power dissipation: 17W
Drain current: 39A
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8
Case: HSMT8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 8.8mΩ
Power dissipation: 17W
Drain current: 39A
Pulsed drain current: 60A
товару немає в наявності
В кошику
од. на суму грн.
| RS1E150GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 13.3mΩ
Power dissipation: 22W
Drain current: 40A
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Case: HSOP8
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 13.3mΩ
Power dissipation: 22W
Drain current: 40A
Pulsed drain current: 60A
товару немає в наявності
В кошику
од. на суму грн.
| EDZVT2R5.1B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SC79; SOD523F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SC79; SOD523F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 6430 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.67 грн |
| 65+ | 6.37 грн |
| 100+ | 4.19 грн |
| 200+ | 3.68 грн |
| 500+ | 3.10 грн |
| 1000+ | 2.73 грн |
| 2000+ | 2.40 грн |
| 5000+ | 2.02 грн |
| BAV99HYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
товару немає в наявності
В кошику
од. на суму грн.
| RUQ050N02FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BU4312F-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Mounting: SMD
Manufacturer series: BU43
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Integrated circuit features: ±1% accuracy
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 1.2V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Mounting: SMD
Manufacturer series: BU43
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Integrated circuit features: ±1% accuracy
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 1.2V
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3906KT146R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Case: SC59; SOT346
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.2W
Current gain: 180...390
Collector-emitter voltage: 120V
Frequency: 140MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Case: SC59; SOT346
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.2W
Current gain: 180...390
Collector-emitter voltage: 120V
Frequency: 140MHz
Polarisation: bipolar
на замовлення 2764 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.16 грн |
| 16+ | 26.94 грн |
| 18+ | 23.26 грн |
| 100+ | 13.31 грн |
| 500+ | 9.47 грн |
| 1000+ | 8.41 грн |
| RXH125N03TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| RQ3E180AJTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 72A
Power dissipation: 30W
Case: HSMT8
Gate-source voltage: ±12V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 72A
Power dissipation: 30W
Case: HSMT8
Gate-source voltage: ±12V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1196 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.50 грн |
| 10+ | 41.55 грн |
| 100+ | 32.16 грн |
| 250+ | 30.12 грн |
| 500+ | 29.06 грн |
| SCS106AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 29A
Max. forward impulse current: 86A
Power dissipation: 65W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 29A
Max. forward impulse current: 86A
Power dissipation: 65W
Kind of package: tube
Heatsink thickness: max. 1.27mm
товару немає в наявності
В кошику
од. на суму грн.
| SCS108AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 35A
Max. forward impulse current: 110A
Power dissipation: 75W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 35A
Max. forward impulse current: 110A
Power dissipation: 75W
Kind of package: tube
Heatsink thickness: max. 1.27mm
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5824T100R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Case: SC62; SOT89
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 180...390
Frequency: 200MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Mounting: SMD
Kind of package: reel; tape
Type of transistor: NPN
Case: SC62; SOT89
Power dissipation: 0.5W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 180...390
Frequency: 200MHz
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.
| DA204UT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A
Semiconductor structure: double series
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 0.2A
Power dissipation: 0.2W
Max. forward impulse current: 0.3A
Max. forward voltage: 1V
Max. off-state voltage: 20V
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A
Semiconductor structure: double series
Kind of package: reel; tape
Case: SC70; SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Max. load current: 0.2A
Power dissipation: 0.2W
Max. forward impulse current: 0.3A
Max. forward voltage: 1V
Max. off-state voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| RFN20NS4SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 20A; 30ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 430V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 30ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 20A; 30ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 430V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 30ns
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| SST3904T116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| DTC143ECAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT
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| RS1G120MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 48A
Drain current: 34A
Drain-source voltage: 40V
Gate charge: 9.4nC
On-state resistance: 20.7mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 48A
Drain current: 34A
Drain-source voltage: 40V
Gate charge: 9.4nC
On-state resistance: 20.7mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
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| RS1G150MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 43A
Drain-source voltage: 40V
Gate charge: 15nC
On-state resistance: 13.3mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 43A
Drain-source voltage: 40V
Gate charge: 15nC
On-state resistance: 13.3mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
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| RS1G180MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 72A
Drain current: 57A
Drain-source voltage: 40V
Gate charge: 19.5nC
On-state resistance: 9.2mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 72A
Drain current: 57A
Drain-source voltage: 40V
Gate charge: 19.5nC
On-state resistance: 9.2mΩ
Power dissipation: 30W
Gate-source voltage: ±20V
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| RS1G201ATTB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -78A
Drain-source voltage: -40V
Gate charge: 130nC
On-state resistance: 6.5mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -78A
Drain-source voltage: -40V
Gate charge: 130nC
On-state resistance: 6.5mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
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| RS1G260MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 104A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 44nC
On-state resistance: 4.4mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 104A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 104A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 44nC
On-state resistance: 4.4mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
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| RS1G300GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 120A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 56.8nC
On-state resistance: 3mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 120A; 35W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 120A
Drain current: 80A
Drain-source voltage: 40V
Gate charge: 56.8nC
On-state resistance: 3mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
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| RHP030N03T100 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 10A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 10A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 10A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BA10358F-E2 | ![]() |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 500kHz; Ch: 2; SO8; 3÷32VDC; reel,tape
Mounting: SMT
Kind of package: reel; tape
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Input offset current: 50nA
Input bias current: 0.25µA
Input offset voltage: 7mV
Slew rate: 0.2V/μs
Voltage supply range: 3...32V DC
Bandwidth: 500kHz
Case: SO8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 500kHz; Ch: 2; SO8; 3÷32VDC; reel,tape
Mounting: SMT
Kind of package: reel; tape
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Operating temperature: -40...85°C
Input offset current: 50nA
Input bias current: 0.25µA
Input offset voltage: 7mV
Slew rate: 0.2V/μs
Voltage supply range: 3...32V DC
Bandwidth: 500kHz
Case: SO8
на замовлення 2174 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.07 грн |
| 12+ | 34.04 грн |
| 14+ | 30.53 грн |
| 25+ | 26.94 грн |
| 100+ | 26.45 грн |
| 250+ | 23.51 грн |
| RRD07MM4STR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Load current: 0.7A
Max. forward voltage: 0.98V
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.7A; SOD123F; Ufmax: 0.98V; Ifsm: 150A
Mounting: SMD
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Load current: 0.7A
Max. forward voltage: 0.98V
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
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| RB160MM-60TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 1897 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.73 грн |
| 28+ | 14.94 грн |
| 40+ | 11.92 грн |
| 100+ | 10.12 грн |
| 500+ | 7.51 грн |
| 1000+ | 6.78 грн |
| 2SAR573D3FRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| 2SAR573D3TL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 10W; DPAK,TO252
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 180...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| 2SB1198KT146Q |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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| 2SB1198KT146R |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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| RF4E100AJTCR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±12V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 36A; 2W; DFN2020-8S
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 10A
Pulsed drain current: 36A
Power dissipation: 2W
Case: DFN2020-8S
Gate-source voltage: ±12V
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2830 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.29 грн |
| 11+ | 39.67 грн |
| 100+ | 30.77 грн |
| 500+ | 24.90 грн |
| 1000+ | 22.45 грн |
| EDZVFHT2R36B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 36V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 36V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 36V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 36V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
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| EDZVT2R36B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 36V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 36V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 36V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 36V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
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| EMT1T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.15A
Collector-emitter voltage: 50V
Current gain: 120...560
Frequency: 140MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 50V; 0.15A; 150mW; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Power dissipation: 0.15W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.15A
Collector-emitter voltage: 50V
Current gain: 120...560
Frequency: 140MHz
на замовлення 3490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.13 грн |
| 23+ | 18.53 грн |
| 100+ | 10.53 грн |
| 500+ | 7.43 грн |
| 1000+ | 6.53 грн |
| 2000+ | 5.80 грн |
| DTC113ZCAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Current gain: 33
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
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| RGS60TS65DHRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 46ns
Turn-off time: 290ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 46ns
Turn-off time: 290ns
на замовлення 417 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 411.40 грн |
| 10+ | 342.02 грн |
| 30+ | 296.31 грн |
| 90+ | 284.88 грн |
| SCT3080ARC14 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 30A; Idm: 75A; 134W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 134W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| SMLD12BN1WT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; blue; SMD; 0603; 14÷40mcd; 2.9VDC; 1.6x0.8x0.55mm; 5mA; 66mW
Mounting: SMD
Wavelength: 470nm
Dimensions: 1.6x0.8x0.55mm
LED current: 5mA
Luminosity: 14...40mcd
Power: 66mW
Operating voltage: 2.9V DC
Case: 0603
LED colour: blue
LED lens: diffused; white
Front: flat
Type of diode: LED
Category: SMD colour LEDs
Description: LED; blue; SMD; 0603; 14÷40mcd; 2.9VDC; 1.6x0.8x0.55mm; 5mA; 66mW
Mounting: SMD
Wavelength: 470nm
Dimensions: 1.6x0.8x0.55mm
LED current: 5mA
Luminosity: 14...40mcd
Power: 66mW
Operating voltage: 2.9V DC
Case: 0603
LED colour: blue
LED lens: diffused; white
Front: flat
Type of diode: LED
на замовлення 3218 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.22 грн |
| 25+ | 16.65 грн |
| 50+ | 14.61 грн |
| 100+ | 13.63 грн |
| 500+ | 11.51 грн |
| 3000+ | 9.31 грн |
| RQ3E100BNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 40A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 40A; 15W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 15W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 15.3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 40A
на замовлення 126 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.16 грн |
| 18+ | 23.02 грн |
| 100+ | 16.57 грн |
| 2SC4098T106P |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 50mA; 200mW; SC70,SOT323
Case: SC70; SOT323
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 25V
Current gain: 82...180
Frequency: 300MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 50mA; 200mW; SC70,SOT323
Case: SC70; SOT323
Type of transistor: NPN
Mounting: SMD
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 25V
Current gain: 82...180
Frequency: 300MHz
Polarisation: bipolar
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| RHK003N06FRAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 1.2A
Power dissipation: 0.2W
Case: SMT3
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RB085BGE-30TL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 5Ax2
Case: DPAK; SC63; TO252
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Leakage current: 0.3mA
Max. forward voltage: 0.48V
Load current: 5A x2
Max. off-state voltage: 30V
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 5Ax2
Case: DPAK; SC63; TO252
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Type of diode: Schottky rectifying
Leakage current: 0.3mA
Max. forward voltage: 0.48V
Load current: 5A x2
Max. off-state voltage: 30V
Max. forward impulse current: 50A
на замовлення 786 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.70 грн |
| 10+ | 62.85 грн |
| 100+ | 46.36 грн |
| 250+ | 40.00 грн |
| 500+ | 39.51 грн |
| RVQ040N05TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±21V
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 4A; Idm: 16A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±21V
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| R6030JNZ4C13 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 143mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 74nC
Power dissipation: 370W
Pulsed drain current: 90A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 143mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 74nC
Power dissipation: 370W
Pulsed drain current: 90A
на замовлення 534 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 493.16 грн |
| 5+ | 413.85 грн |
| 30+ | 337.94 грн |
| SML-311UTT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 0.9÷2.5mcd; 1.8VDC; 1.6x0.8x0.8mm; 2mA
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0603
Luminosity: 0.9...2.5mcd
Operating voltage: 1.8V DC
Dimensions: 1.6x0.8x0.8mm
LED current: 2mA
Wavelength: 620nm
LED lens: transparent
Front: flat
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 0.9÷2.5mcd; 1.8VDC; 1.6x0.8x0.8mm; 2mA
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0603
Luminosity: 0.9...2.5mcd
Operating voltage: 1.8V DC
Dimensions: 1.6x0.8x0.8mm
LED current: 2mA
Wavelength: 620nm
LED lens: transparent
Front: flat
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| SML-D12V1WT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 25÷40mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA; 54mW
Type of diode: LED
LED colour: red
Mounting: SMD
Front: flat
LED current: 20mA
LED lens: diffused; white
Luminosity: 25...40mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
Power: 54mW
Case: 0603
Wavelength: 625...635nm
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 25÷40mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA; 54mW
Type of diode: LED
LED colour: red
Mounting: SMD
Front: flat
LED current: 20mA
LED lens: diffused; white
Luminosity: 25...40mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
Power: 54mW
Case: 0603
Wavelength: 625...635nm
на замовлення 4340 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.43 грн |
| 51+ | 8.08 грн |
| 100+ | 5.22 грн |
| 500+ | 3.99 грн |
| 1000+ | 3.61 грн |
| 3000+ | 3.56 грн |
| BD4850FVE-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Supply voltage: 950mV DC...10V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open drain
Kind of package: reel; tape
Case: VSOF5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 5V
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Supply voltage: 950mV DC...10V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open drain
Kind of package: reel; tape
Case: VSOF5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 5V
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Active logical level: low
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| BD4850G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 950mV DC...10V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open drain
Kind of package: reel; tape
Case: SSOP5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 5V
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 950mV DC...10V DC
Mounting: SMD
Operating temperature: -40...105°C
Kind of RESET output: open drain
Kind of package: reel; tape
Case: SSOP5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 5V
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Active logical level: low
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| RCX160N20 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
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| KDZLVTFTR100 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 100V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 100V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 5µA
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| SML-D12Y1WT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 63÷100mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case: 0603
Luminosity: 63...100mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 587...593nm
LED lens: transparent
Power: 54mW
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 63÷100mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case: 0603
Luminosity: 63...100mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 587...593nm
LED lens: transparent
Power: 54mW
Front: flat
на замовлення 3737 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.43 грн |
| 51+ | 8.08 грн |
| 100+ | 5.31 грн |
| 500+ | 4.04 грн |
| 1000+ | 3.64 грн |
| 3000+ | 3.33 грн |
| SCS210KGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; 150W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 50A
Max. forward impulse current: 160A
Power dissipation: 150W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; 150W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.6V
Max. load current: 50A
Max. forward impulse current: 160A
Power dissipation: 150W
Kind of package: tube
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| IMX8T108 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Polarisation: bipolar
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 180...820
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 120V; 50mA; 300mW; SC74,SOT457
Case: SC74; SOT457
Mounting: SMD
Polarisation: bipolar
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.3W
Collector-emitter voltage: 120V
Current gain: 180...820
Frequency: 140MHz
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| DTA124EKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
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| DTA124EU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
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| DTA124ECAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.2W
Frequency: 250MHz
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| DTA124EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.15W
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 56
Power dissipation: 0.15W
Frequency: 250MHz
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| BD5424EFS-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 20W; Ch: 2; Amp.class: D
Type of integrated circuit: audio amplifier
Amplifier class: D
Number of channels: 2
Output power: 20W
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 20W; Ch: 2; Amp.class: D
Type of integrated circuit: audio amplifier
Amplifier class: D
Number of channels: 2
Output power: 20W
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| SH8J31GZETB |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.5A; Idm: -18A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.5A; Idm: -18A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| SCS315AHGC9 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220AC; Ir: 300uA
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 0.3mA
Max. forward voltage: 1.71V
Max. forward impulse current: 410A
Max. off-state voltage: 650V
Load current: 15A
Max. load current: 64A
Power dissipation: 93W
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220AC; Ir: 300uA
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 0.3mA
Max. forward voltage: 1.71V
Max. forward impulse current: 410A
Max. off-state voltage: 650V
Load current: 15A
Max. load current: 64A
Power dissipation: 93W
Technology: SiC
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