Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102204) > Сторінка 1696 з 1704
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| RFN20NS3STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 350V; 20A; 35ns; D2PAK; Ufmax: 1.35V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 20A Reverse recovery time: 35ns Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.35V Max. forward impulse current: 100A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SCT3160KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247 Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Gate charge: 42nC On-state resistance: 0.16Ω Drain current: 17A Power dissipation: 103W Drain-source voltage: 1.2kV Case: TO247 Technology: SiC Kind of channel: enhancement Polarisation: unipolar |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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| BUS1DJC0GWZ-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; UCSP30L1 Case: UCSP30L1 Active logical level: high Kind of integrated circuit: high-side Protection: over current OCP; overheating OTP; undervoltage UVP Kind of output: P-Channel Type of integrated circuit: power switch Mounting: SMD Operating temperature: -30...85°C On-state resistance: 245mΩ Number of channels: 1 Supply voltage: 1.1...5V Output current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BUS1DJC3GWZ-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; UCSP30L1 Case: UCSP30L1 Active logical level: high Kind of integrated circuit: high-side Protection: over current OCP; overheating OTP; undervoltage UVP Kind of output: P-Channel Type of integrated circuit: power switch Mounting: SMD Operating temperature: -30...85°C On-state resistance: 245mΩ Number of channels: 1 Supply voltage: 1.1...5V Output current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RBR1L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.52V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CDZVT2R12B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 100mW; 12V; SMD; reel,tape; SOD923; single diode Type of diode: Zener Power dissipation: 0.1W Zener voltage: 12V Kind of package: reel; tape Case: SOD923 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| EDZVT2R12B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 12V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 12V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KDZVTFTR12B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 12V; SMD; reel,tape; SOD123F; single diode; 10uA Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Kind of package: reel; tape Case: SOD123F Mounting: SMD Semiconductor structure: single diode Leakage current: 10µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| EDZVFHT2R12B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 12V; SMD; reel,tape; SC79,SOD523; single diode Type of diode: Zener Power dissipation: 0.15W Zener voltage: 12V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| UDZVFHTE-1712B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 12V; SMD; reel,tape; SC90A,SOD323F; 100nA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 12V Kind of package: reel; tape Case: SC90A; SOD323F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA143XMT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT723 Collector current: 0.1A Power dissipation: 0.15W Current gain: 30 Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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BZX84C20VLYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 20V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 20V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BA10324AF-E2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 500kHz; 3÷32V; Ch: 4; SO14; reel,tape Integrated circuit features: differential Type of integrated circuit: operational amplifier Kind of package: reel; tape Mounting: SMT Case: SO14 Operating temperature: -40...85°C Input offset current: 50nA Input bias current: 0.25µA Input offset voltage: 7mV Slew rate: 0.2V/μs Operating voltage: 3...32V Number of channels: 4 Bandwidth: 500kHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD45292G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Manufacturer series: BD45 Integrated circuit features: Counter Timer Built-in Mounting: SMD Case: SSOP5 Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Kind of integrated circuit: voltage detector Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 2.9V Type of integrated circuit: supervisor circuit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FMA4AT148 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT25 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C3V3LYT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BA33BC0WFP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD Case: TO252-5 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Type of integrated circuit: voltage regulator Operating temperature: -40...105°C Output current: 1A Voltage drop: 0.5V Number of channels: 1 Tolerance: ±2% Input voltage: 3...16V Output voltage: 3.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RQ5C060BCTCL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -18A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±8V On-state resistance: 51mΩ Mounting: SMD Gate charge: 19.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD2221G-TR | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SSOP5; -40÷85°C Operating temperature: -40...85°C Kind of integrated circuit: high-side Active logical level: low Type of integrated circuit: power switch Kind of output: N-Channel On-state resistance: 0.21Ω Number of channels: 1 Supply voltage: 2.7...5.5V Protection: over current OCP; overheating OTP; undervoltage UVP Case: SSOP5 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSQ020N03HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSJ650N10TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Pulsed drain current: 130A Power dissipation: 100W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 9.8mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1SS380VMFHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V Type of diode: switching Case: SC90A; SOD323F Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1.2V Max. forward impulse current: 0.4A Kind of package: reel; tape Max. load current: 225mA |
на замовлення 2050 шт: термін постачання 21-30 дні (днів) |
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1SS380VMTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V Type of diode: switching Case: SC90A; SOD323F Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1.2V Max. forward impulse current: 0.4A Kind of package: reel; tape Max. load current: 225mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RRH090P03TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -9A Pulsed drain current: -36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 15.4mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RF505BM6SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 30ns Max. forward voltage: 1.7V Load current: 5A Max. forward impulse current: 50A Max. off-state voltage: 0.6kV Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RF505BM6STL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 30ns Max. forward voltage: 1.7V Load current: 5A Max. forward impulse current: 50A Max. off-state voltage: 0.6kV Case: DPAK |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD4942G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: CMOS Active logical level: low Supply voltage: 950mV DC...10V DC Case: SSOP5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 4.2V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD49 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FMG3AT148 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT25 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB560VM-40FHTE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Leakage current: 40µA Load current: 0.5A Max. forward voltage: 0.64V Max. forward impulse current: 2A Max. off-state voltage: 40V Kind of package: reel; tape Case: SOD323F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BA90BC0FP-E2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 9V; 1A; TO252-3; SMD; ±2% Output voltage: 9V Type of integrated circuit: voltage regulator Operating temperature: -40...105°C Voltage drop: 0.5V Number of channels: 1 Output current: 1A Tolerance: ±2% Input voltage: 3...16V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Case: TO252-3 |
на замовлення 1770 шт: термін постачання 21-30 дні (днів) |
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DTDG14GPT100 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 300 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Base-emitter resistor: 10kΩ Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BA6506F-GE2 | ROHM SEMICONDUCTOR |
Category: Motor and PWM driversDescription: IC: driver; brushless motor controller; SOP8; Ch: 2; 4÷28VDC Type of integrated circuit: driver Kind of integrated circuit: brushless motor controller Case: SOP8 Number of channels: 2 Mounting: SMT Operating temperature: -40...100°C Operating voltage: 4...28V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTC114TCAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Current gain: 100...600 Power dissipation: 0.2W Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS210AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.55V Max. load current: 28A Max. forward impulse current: 150A Power dissipation: 34W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RSQ035N06HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 87mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SB1695KT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1.5A; 200mW; SC59,SOT346 Mounting: SMD Type of transistor: PNP Power dissipation: 0.2W Collector current: 1.5A Collector-emitter voltage: 30V Current gain: 270...680 Frequency: 280MHz Kind of package: reel; tape Polarisation: bipolar Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 2SB1695TL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SC96 Mounting: SMD Type of transistor: PNP Power dissipation: 0.5W Collector current: 1.5A Collector-emitter voltage: 30V Current gain: 270...680 Frequency: 280MHz Kind of package: reel; tape Polarisation: bipolar Case: SC96 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SB1697T100 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 12V; 2A; 500mW; SC62,SOT89 Mounting: SMD Type of transistor: PNP Kind of package: reel; tape Case: SC62; SOT89 Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 12V Current gain: 270...680 Frequency: 360MHz Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC857BU3HZGT106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 210...480 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SAR502U3HZGT106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 520MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC4081U3HZGT106Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| R6015ENXC7G | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.56Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 40nC Pulsed drain current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RD3G500GNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252 Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 40V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 31nC On-state resistance: 6.3mΩ Power dissipation: 35W Drain current: 50A Pulsed drain current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SML-H12P8TT86C | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW Type of diode: LED LED colour: green Mounting: SMD Case: 0805 Luminosity: 2.5...4mcd Operating voltage: 2.2V DC Dimensions: 2x1.25x0.8mm LED current: 20mA Wavelength: 557...563nm LED lens: transparent Power: 54mW Front: flat |
на замовлення 2914 шт: термін постачання 21-30 дні (днів) |
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SML-H12P8TT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW Type of diode: LED LED colour: green Mounting: SMD Case: 0805 Luminosity: 2.5...4mcd Operating voltage: 2.2V DC Dimensions: 2x1.25x0.8mm LED current: 20mA Wavelength: 557...563nm LED lens: transparent Power: 54mW Front: flat |
на замовлення 3012 шт: термін постачання 21-30 дні (днів) |
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| RJP020N06FRAT100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RJP020N06T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RHP020N06T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSR020N06FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSR020N06HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SCT3030ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 39mΩ Mounting: THT Gate charge: 104nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RV2C010UNT2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 2A Power dissipation: 0.4W Case: DFN1006-3 Gate-source voltage: ±8V On-state resistance: 1.05Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RB088BM100FHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 5Ax2 Mounting: SMD Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Type of diode: Schottky rectifying Leakage current: 5µA Max. forward voltage: 0.87V Load current: 5A x2 Max. off-state voltage: 100V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1E280BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 112A Power dissipation: 30W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 94nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1E280GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 112A Power dissipation: 31W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX84C10VLYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 2µA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C10VLYT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAV99HYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS40-06HYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 120mA x2 Semiconductor structure: common anode; double Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Max. load current: 120mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
DTC013ZMT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Case: SOT723 Collector current: 0.1A Power dissipation: 0.15W Current gain: 30 Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| RFN20NS3STL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 35ns; D2PAK; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.35V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 35ns; D2PAK; Ufmax: 1.35V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.35V
Max. forward impulse current: 100A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SCT3160KLGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 42nC
On-state resistance: 0.16Ω
Drain current: 17A
Power dissipation: 103W
Drain-source voltage: 1.2kV
Case: TO247
Technology: SiC
Kind of channel: enhancement
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 42nC
On-state resistance: 0.16Ω
Drain current: 17A
Power dissipation: 103W
Drain-source voltage: 1.2kV
Case: TO247
Technology: SiC
Kind of channel: enhancement
Polarisation: unipolar
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 913.56 грн |
| BUS1DJC0GWZ-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; UCSP30L1
Case: UCSP30L1
Active logical level: high
Kind of integrated circuit: high-side
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -30...85°C
On-state resistance: 245mΩ
Number of channels: 1
Supply voltage: 1.1...5V
Output current: 2A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; UCSP30L1
Case: UCSP30L1
Active logical level: high
Kind of integrated circuit: high-side
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -30...85°C
On-state resistance: 245mΩ
Number of channels: 1
Supply voltage: 1.1...5V
Output current: 2A
товару немає в наявності
В кошику
од. на суму грн.
| BUS1DJC3GWZ-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; UCSP30L1
Case: UCSP30L1
Active logical level: high
Kind of integrated circuit: high-side
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -30...85°C
On-state resistance: 245mΩ
Number of channels: 1
Supply voltage: 1.1...5V
Output current: 2A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; UCSP30L1
Case: UCSP30L1
Active logical level: high
Kind of integrated circuit: high-side
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of output: P-Channel
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -30...85°C
On-state resistance: 245mΩ
Number of channels: 1
Supply voltage: 1.1...5V
Output current: 2A
товару немає в наявності
В кошику
од. на суму грн.
| RBR1L40ADDTE25 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 30A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| CDZVT2R12B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 12V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 12V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
товару немає в наявності
В кошику
од. на суму грн.
| EDZVT2R12B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
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В кошику
од. на суму грн.
| KDZVTFTR12B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; reel,tape; SOD123F; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; reel,tape; SOD123F; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Leakage current: 10µA
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В кошику
од. на суму грн.
| EDZVFHT2R12B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 12V; SMD; reel,tape; SC79,SOD523; single diode
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 0.1µA
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В кошику
од. на суму грн.
| UDZVFHTE-1712B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 12V; SMD; reel,tape; SC90A,SOD323F; 100nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 12V
Kind of package: reel; tape
Case: SC90A; SOD323F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
товару немає в наявності
В кошику
од. на суму грн.
| DTA143XMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.35 грн |
| 148+ | 2.75 грн |
| 177+ | 2.30 грн |
| 250+ | 2.06 грн |
| 500+ | 1.92 грн |
| 1000+ | 1.83 грн |
| BZX84C20VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 20V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 20V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BA10324AF-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 500kHz; 3÷32V; Ch: 4; SO14; reel,tape
Integrated circuit features: differential
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Input offset current: 50nA
Input bias current: 0.25µA
Input offset voltage: 7mV
Slew rate: 0.2V/μs
Operating voltage: 3...32V
Number of channels: 4
Bandwidth: 500kHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 500kHz; 3÷32V; Ch: 4; SO14; reel,tape
Integrated circuit features: differential
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Input offset current: 50nA
Input bias current: 0.25µA
Input offset voltage: 7mV
Slew rate: 0.2V/μs
Operating voltage: 3...32V
Number of channels: 4
Bandwidth: 500kHz
товару немає в наявності
В кошику
од. на суму грн.
| BD45292G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Manufacturer series: BD45
Integrated circuit features: Counter Timer Built-in
Mounting: SMD
Case: SSOP5
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 2.9V
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Manufacturer series: BD45
Integrated circuit features: Counter Timer Built-in
Mounting: SMD
Case: SSOP5
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 2.9V
Type of integrated circuit: supervisor circuit
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В кошику
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| FMA4AT148 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
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| BZX84C3V3LYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
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| BA33BC0WFP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD
Case: TO252-5
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...105°C
Output current: 1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...16V
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD
Case: TO252-5
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...105°C
Output current: 1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...16V
Output voltage: 3.3V
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| RQ5C060BCTCL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±8V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±8V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BD2221G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SSOP5; -40÷85°C
Operating temperature: -40...85°C
Kind of integrated circuit: high-side
Active logical level: low
Type of integrated circuit: power switch
Kind of output: N-Channel
On-state resistance: 0.21Ω
Number of channels: 1
Supply voltage: 2.7...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Case: SSOP5
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SSOP5; -40÷85°C
Operating temperature: -40...85°C
Kind of integrated circuit: high-side
Active logical level: low
Type of integrated circuit: power switch
Kind of output: N-Channel
On-state resistance: 0.21Ω
Number of channels: 1
Supply voltage: 2.7...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Case: SSOP5
Mounting: SMD
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| RSQ020N03HZGTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RSJ650N10TL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 130A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 130A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 1SS380VMFHTE-17 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Case: SC90A; SOD323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.4A
Kind of package: reel; tape
Max. load current: 225mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Case: SC90A; SOD323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.4A
Kind of package: reel; tape
Max. load current: 225mA
на замовлення 2050 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.16 грн |
| 37+ | 11.16 грн |
| 100+ | 6.66 грн |
| 250+ | 5.53 грн |
| 500+ | 4.87 грн |
| 1000+ | 4.33 грн |
| 1SS380VMTE-17 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Case: SC90A; SOD323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.4A
Kind of package: reel; tape
Max. load current: 225mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Case: SC90A; SOD323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.4A
Kind of package: reel; tape
Max. load current: 225mA
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| RRH090P03TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| RF505BM6SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
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| RF505BM6STL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
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| BD4942G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD49
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD49
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| FMG3AT148 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
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| RB560VM-40FHTE-17 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Leakage current: 40µA
Load current: 0.5A
Max. forward voltage: 0.64V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOD323F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Leakage current: 40µA
Load current: 0.5A
Max. forward voltage: 0.64V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOD323F
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| BA90BC0FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 1A; TO252-3; SMD; ±2%
Output voltage: 9V
Type of integrated circuit: voltage regulator
Operating temperature: -40...105°C
Voltage drop: 0.5V
Number of channels: 1
Output current: 1A
Tolerance: ±2%
Input voltage: 3...16V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Case: TO252-3
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 1A; TO252-3; SMD; ±2%
Output voltage: 9V
Type of integrated circuit: voltage regulator
Operating temperature: -40...105°C
Voltage drop: 0.5V
Number of channels: 1
Output current: 1A
Tolerance: ±2%
Input voltage: 3...16V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Case: TO252-3
на замовлення 1770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.86 грн |
| 10+ | 55.96 грн |
| 25+ | 50.78 грн |
| 50+ | 47.71 грн |
| 100+ | 45.21 грн |
| 250+ | 42.46 грн |
| 500+ | 40.92 грн |
| DTDG14GPT100 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 300
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
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| BA6506F-GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SOP8; Ch: 2; 4÷28VDC
Type of integrated circuit: driver
Kind of integrated circuit: brushless motor controller
Case: SOP8
Number of channels: 2
Mounting: SMT
Operating temperature: -40...100°C
Operating voltage: 4...28V DC
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SOP8; Ch: 2; 4÷28VDC
Type of integrated circuit: driver
Kind of integrated circuit: brushless motor controller
Case: SOP8
Number of channels: 2
Mounting: SMT
Operating temperature: -40...100°C
Operating voltage: 4...28V DC
Kind of package: reel; tape
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| DTC114TCAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Current gain: 100...600
Power dissipation: 0.2W
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Current gain: 100...600
Power dissipation: 0.2W
Frequency: 250MHz
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| SCS210AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 28A
Max. forward impulse current: 150A
Power dissipation: 34W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 28A
Max. forward impulse current: 150A
Power dissipation: 34W
Kind of package: tube
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| RSQ035N06HZGTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 2SB1695KT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 200mW; SC59,SOT346
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 1.5A
Collector-emitter voltage: 30V
Current gain: 270...680
Frequency: 280MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 200mW; SC59,SOT346
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 1.5A
Collector-emitter voltage: 30V
Current gain: 270...680
Frequency: 280MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SC59; SOT346
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| 2SB1695TL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SC96
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.5W
Collector current: 1.5A
Collector-emitter voltage: 30V
Current gain: 270...680
Frequency: 280MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SC96
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SC96
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.5W
Collector current: 1.5A
Collector-emitter voltage: 30V
Current gain: 270...680
Frequency: 280MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SC96
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| 2SB1697T100 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2A; 500mW; SC62,SOT89
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Case: SC62; SOT89
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 12V
Current gain: 270...680
Frequency: 360MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2A; 500mW; SC62,SOT89
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Case: SC62; SOT89
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 12V
Current gain: 270...680
Frequency: 360MHz
Polarisation: bipolar
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| BC857BU3HZGT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| 2SAR502U3HZGT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
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| 2SC4081U3HZGT106Q |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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| R6015ENXC7G |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 30A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 30A
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| RD3G500GNTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 31nC
On-state resistance: 6.3mΩ
Power dissipation: 35W
Drain current: 50A
Pulsed drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 31nC
On-state resistance: 6.3mΩ
Power dissipation: 35W
Drain current: 50A
Pulsed drain current: 100A
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| SML-H12P8TT86C |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0805
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0805
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
на замовлення 2914 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.64 грн |
| 27+ | 15.20 грн |
| 32+ | 12.94 грн |
| 100+ | 10.11 грн |
| 141+ | 6.79 грн |
| 386+ | 6.39 грн |
| SML-H12P8TT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0805
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0805
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
на замовлення 3012 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.74 грн |
| 21+ | 19.81 грн |
| 50+ | 14.31 грн |
| 100+ | 12.37 грн |
| 133+ | 7.20 грн |
| 365+ | 6.79 грн |
| RJP020N06FRAT100 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RJP020N06T100 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RHP020N06T100 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RSR020N06FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RSR020N06HZGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SCT3030ARC14 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| RV2C010UNT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| RB088BM100FHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 5Ax2
Mounting: SMD
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Type of diode: Schottky rectifying
Leakage current: 5µA
Max. forward voltage: 0.87V
Load current: 5A x2
Max. off-state voltage: 100V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 5Ax2
Mounting: SMD
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Type of diode: Schottky rectifying
Leakage current: 5µA
Max. forward voltage: 0.87V
Load current: 5A x2
Max. off-state voltage: 100V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| RS1E280BNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 30W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 30W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 94nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RS1E280GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 31W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 112A
Power dissipation: 31W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BZX84C10VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Application: automotive industry
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| BZX84C10VLYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
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| BAV99HYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
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| BAS40-06HYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 120mA x2
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Max. load current: 120mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 120mA x2
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Max. load current: 120mA
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| DTC013ZMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 16.17 грн |















