Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102254) > Сторінка 1698 з 1705
Фото | Назва | Виробник | Інформація |
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DTD113ECT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 1kΩ Mounting: SMD Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTD113EKT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 1kΩ Mounting: SMD Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTB113ECT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 1kΩ Mounting: SMD Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTB113EKT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 1kΩ Mounting: SMD Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
R6030JNXC7G | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 95W; TO220FP Mounting: THT Drain-source voltage: 600V Drain current: 30A On-state resistance: 143mΩ Type of transistor: N-MOSFET Power dissipation: 95W Polarisation: unipolar Kind of package: tube Gate charge: 74nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 90A Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BA10393F-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: comparator; Cmp: 2; SMT; SO8; reel,tape; OUT: open collector Operating temperature: -40...85°C Mounting: SMT Type of integrated circuit: comparator Number of comparators: 2 Input offset voltage: 5mV Kind of output: open collector Kind of package: reel; tape Input offset current: 50nA Voltage supply range: ± 1...18V DC; 2...36V DC Case: SO8 |
на замовлення 2164 шт: термін постачання 21-30 дні (днів) |
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DTC143ZEBHZGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC89 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RB520SM-40T2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Kind of package: reel; tape Max. forward voltage: 0.55V Leakage current: 10µA |
на замовлення 5928 шт: термін постачання 21-30 дні (днів) |
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RB520SM-30FHT2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 1A Kind of package: reel; tape Max. forward voltage: 0.58V Leakage current: 1µA |
на замовлення 6832 шт: термін постачання 21-30 дні (днів) |
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RB400DFHT146 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Case: SC59; SOT346 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.55V Max. forward impulse current: 3A Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BR24L02FVM-WTR | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; MSOP8 Mounting: SMD Case: MSOP8 Kind of package: reel; tape Memory: 2kb EEPROM Operating temperature: -40...85°C Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 256x8bit Access time: 5ms Clock frequency: 400kHz Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BR24L02F-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Memory: 2kb EEPROM Operating temperature: -40...85°C Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 256x8bit Access time: 5ms Clock frequency: 400kHz Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BR24L02FJ-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; SOP-J8 Mounting: SMD Case: SOP-J8 Kind of package: reel; tape Memory: 2kb EEPROM Operating temperature: -40...85°C Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 256x8bit Access time: 5ms Clock frequency: 400kHz Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BR24L02FVT-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; serial Mounting: SMD Case: TSSOP-B8 Kind of package: reel; tape Memory: 2kb EEPROM Operating temperature: -40...85°C Supply voltage: 1.7...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 256x8bit Access time: 5ms Clock frequency: 400kHz Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BD5343G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: CMOS Active logical level: low Supply voltage: 950mV DC...10V DC Case: SSOP5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 4.3V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD53 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SML-311UTT86 | ROHM SEMICONDUCTOR |
![]() Description: LED; red; SMD; 0603; 0.9÷2.5mcd; 1.6x0.8x0.8mm; 2mA; λd: 620nm Type of diode: LED LED colour: red Mounting: SMD Case: 0603 Luminosity: 0.9...2.5mcd Dimensions: 1.6x0.8x0.8mm LED current: 2mA Wavelength: 620nm LED lens: transparent Front: flat Operating voltage: 1.8V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DAN235ETL | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; 35V; 150mW; SC75A; double,common cathode; 10nA Max. off-state voltage: 35V Max. forward voltage: 1V Semiconductor structure: common cathode; double Leakage current: 10nA Power dissipation: 0.15W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: band-switching; RF Mounting: SMD Case: SC75A Capacitance: 1.2pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DAN235UT106 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; 35V; 150mW; SC70,SOT323; double,common cathode Max. off-state voltage: 35V Max. forward voltage: 1V Semiconductor structure: common cathode; double Leakage current: 10nA Power dissipation: 0.15W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: band-switching; RF Mounting: SMD Case: SC70; SOT323 Capacitance: 1.2pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMD16AT108 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.5/0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 82...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base-emitter resistor: 22kΩ Base resistor: 2.2/100kΩ |
на замовлення 1010 шт: термін постачання 21-30 дні (днів) |
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IMZ1AT108 | ROHM SEMICONDUCTOR |
![]() ![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.3W Case: SC74; SOT457 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
на замовлення 2893 шт: термін постачання 21-30 дні (днів) |
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QSZ2TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 1.5A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 30V Collector current: 1.5A Power dissipation: 0.5W Case: SOT25T Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 280MHz; 300MHz |
на замовлення 2411 шт: термін постачання 21-30 дні (днів) |
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RFN1LAM7STFTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 700V; 0.8A; 80ns; SOD128; Ufmax: 1.5V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode Max. off-state voltage: 700V Max. forward voltage: 1.5V Load current: 0.8A Reverse recovery time: 80ns Max. forward impulse current: 15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RFN1LAM7STR | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 700V; 0.8A; 80ns; SOD128; Ufmax: 1.5V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode Max. off-state voltage: 700V Max. forward voltage: 1.5V Load current: 0.8A Reverse recovery time: 80ns Max. forward impulse current: 15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTC114YKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ Case: SC59; SOT346 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 68 Collector current: 0.1A |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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SMLK28WBNCW1 | ROHM SEMICONDUCTOR |
![]() Description: LED; white; SMD; 5900mcd; 90mA; Lens: transparent; Front: flat Type of diode: LED LED colour: white Mounting: SMD Luminosity: 5900mcd LED current: 90mA LED lens: transparent Front: flat |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SA2119KT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 12V; 0.5A; 200mW; SC59,SOT346 Mounting: SMD Frequency: 260MHz Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC2412KT146Q | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
на замовлення 2251 шт: термін постачання 21-30 дні (днів) |
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2SC2412KT146R | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
на замовлення 2912 шт: термін постачання 21-30 дні (днів) |
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2SC2412KT146S | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BR24A01AF-WME2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP8 Operating temperature: -40...105°C Supply voltage: 2.5...5.5V DC Type of integrated circuit: EEPROM memory Interface: 2-wire; I2C Kind of memory: EEPROM Memory organisation: 128x8bit Access time: 5ms Clock frequency: 400kHz Kind of package: reel; tape Kind of interface: serial Memory: 1kb EEPROM Mounting: SMD Case: SOP8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BA33BC0T | ROHM SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO220FP; THT Tolerance: ±2% Output voltage: 3.3V Output current: 1A Voltage drop: 0.5V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 3...16V Kind of package: tube Kind of voltage regulator: fixed; LDO; linear Mounting: THT Operating temperature: -40...105°C Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BA33BC0FP-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD Tolerance: ±2% Output voltage: 3.3V Output current: 1A Voltage drop: 0.5V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 3...16V Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...105°C Case: TO252-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BA33BC0WFP-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.5V Output voltage: 3.3V Output current: 1A Case: TO252-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...105°C Tolerance: ±2% Number of channels: 1 Input voltage: 3...16V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
UDZLVTE-17100 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 200mW; 100V; SMD; reel,tape; SOD323F; single diode Mounting: SMD Case: SOD323F Semiconductor structure: single diode Zener voltage: 100V Leakage current: 0.2µA Power dissipation: 0.2W Kind of package: reel; tape Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BA82904YF-CE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: operational amplifier; 500kHz; Ch: 2; SOP8; ±1.5÷18VDC,3÷36VDC Mounting: SMT Operating temperature: -40...125°C Case: SOP8 Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 500kHz Input offset voltage: 9mV Kind of package: reel; tape Slew rate: 0.2V/μs Input offset current: 50A Input bias current: 0.1µA Voltage supply range: ± 1.5...18V DC; 3...36V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RSA6.1ENTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: TVS array; 6.1÷7.2V; 200W; quadruple,common anode; SOT353 Mounting: SMD Breakdown voltage: 6.1...7.2V Kind of package: reel; tape Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.2kW Case: SOT353 Semiconductor structure: common anode; quadruple |
на замовлення 1194 шт: термін постачання 21-30 дні (днів) |
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RF501BM2SFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: DPAK Max. forward voltage: 0.92V Max. forward impulse current: 40A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RR601BM4SFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 40A Kind of package: reel; tape Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RR601BM4STL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A Type of diode: rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 40A Kind of package: reel; tape Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BC858BWT106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 210...480 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BA2901SF-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: comparator; Cmp: 4; SMT; SOP14; reel,tape; Iio: 200nA; IB: 0.5uA Type of integrated circuit: comparator Case: SOP14 Mounting: SMT Operating temperature: -40...105°C Kind of package: reel; tape Number of comparators: 4 Input offset voltage: 15mV Input offset current: 200nA Input bias current: 0.5µA Voltage supply range: ± 1...18V DC; 2...36V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BA2901F-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: comparator; Cmp: 4; SMT; SOP14; reel,tape; Iio: 200nA; IB: 0.5uA Type of integrated circuit: comparator Case: SOP14 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Number of comparators: 4 Input offset voltage: 15mV Input offset current: 200nA Input bias current: 0.5µA Voltage supply range: ± 1...18V DC; 2...36V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RSR025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.118Ω Mounting: SMD Gate charge: 2.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SP8K32HZGTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 2372 шт: термін постачання 21-30 дні (днів) |
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SP8K31FRATB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SP8K31HZGTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SP8K33FRATB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5A Pulsed drain current: 20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SP8K33HZGTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 5A Pulsed drain current: 20A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA144EMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.15W Current gain: 68 Frequency: 250MHz |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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DTA144EKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA144GUAT106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTA144TUAT106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Current gain: 100...600 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DTA144EETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA144ECAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DTA143EMFHAT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ Case: SOT723 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RB501SM-30FHT2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.1A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 1A Kind of package: reel; tape Max. forward voltage: 0.35V Leakage current: 10µA |
на замовлення 4078 шт: термін постачання 21-30 дні (днів) |
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BR25G1MF-3GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1Mb EEPROM Interface: SPI Memory organisation: 128kx8bit Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.8...5.5V DC Access time: 5ms Clock frequency: 10MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RB021VAM90TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 90V; 0.2A; reel,tape Mounting: SMD Max. off-state voltage: 90V Max. forward voltage: 0.49V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 5A Leakage current: 0.9mA Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD323HE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BD8LB600FS-CE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: power switch; low-side; 200mA; Ch: 8; SMD; -40÷150°C; 3÷5.5V Supply voltage: 3...5.5V Operating temperature: -40...150°C Kind of integrated circuit: low-side Protection: over current OCP; overheating OTP; undervoltage UVP Mounting: SMD On-state resistance: 1.4Ω Output current: 0.2A Type of integrated circuit: power switch Number of channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RQ3L050GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 20A; 14.8W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Pulsed drain current: 20A Power dissipation: 14.8W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 86mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
DTD113ECT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Mounting: SMD
Case: SOT23
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Mounting: SMD
Case: SOT23
товару немає в наявності
В кошику
од. на суму грн.
DTD113EKT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Mounting: SMD
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Mounting: SMD
Case: SC59; SOT346
товару немає в наявності
В кошику
од. на суму грн.
DTB113ECT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Mounting: SMD
Case: SOT23
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Mounting: SMD
Case: SOT23
товару немає в наявності
В кошику
од. на суму грн.
DTB113EKT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Mounting: SMD
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346; R1: 1kΩ
Frequency: 200MHz
Collector-emitter voltage: 50V
Current gain: 33
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Mounting: SMD
Case: SC59; SOT346
товару немає в наявності
В кошику
од. на суму грн.
R6030JNXC7G |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 95W; TO220FP
Mounting: THT
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 143mΩ
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Kind of package: tube
Gate charge: 74nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 90A
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 95W; TO220FP
Mounting: THT
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 143mΩ
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Kind of package: tube
Gate charge: 74nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 90A
Case: TO220FP
товару немає в наявності
В кошику
од. на суму грн.
BA10393F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; SO8; reel,tape; OUT: open collector
Operating temperature: -40...85°C
Mounting: SMT
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 5mV
Kind of output: open collector
Kind of package: reel; tape
Input offset current: 50nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Case: SO8
Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; SO8; reel,tape; OUT: open collector
Operating temperature: -40...85°C
Mounting: SMT
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 5mV
Kind of output: open collector
Kind of package: reel; tape
Input offset current: 50nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Case: SO8
на замовлення 2164 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.87 грн |
36+ | 26.00 грн |
97+ | 24.59 грн |
100+ | 23.62 грн |
DTC143ZEBHZGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
RB520SM-40T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. forward voltage: 0.55V
Leakage current: 10µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. forward voltage: 0.55V
Leakage current: 10µA
на замовлення 5928 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.00 грн |
47+ | 8.26 грн |
100+ | 4.39 грн |
500+ | 3.26 грн |
581+ | 1.57 грн |
1596+ | 1.49 грн |
RB520SM-30FHT2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. forward voltage: 0.58V
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. forward voltage: 0.58V
Leakage current: 1µA
на замовлення 6832 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.76 грн |
32+ | 12.16 грн |
50+ | 7.84 грн |
100+ | 6.54 грн |
255+ | 3.59 грн |
702+ | 3.39 грн |
5000+ | 3.36 грн |
RB400DFHT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SC59; SOT346
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59,SOT346; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Case: SC59; SOT346
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. forward impulse current: 3A
Leakage current: 50µA
товару немає в наявності
В кошику
од. на суму грн.
BR24L02FVM-WTR |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; MSOP8
Mounting: SMD
Case: MSOP8
Kind of package: reel; tape
Memory: 2kb EEPROM
Operating temperature: -40...85°C
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; MSOP8
Mounting: SMD
Case: MSOP8
Kind of package: reel; tape
Memory: 2kb EEPROM
Operating temperature: -40...85°C
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
BR24L02F-WE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Memory: 2kb EEPROM
Operating temperature: -40...85°C
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Memory: 2kb EEPROM
Operating temperature: -40...85°C
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
BR24L02FJ-WE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; SOP-J8
Mounting: SMD
Case: SOP-J8
Kind of package: reel; tape
Memory: 2kb EEPROM
Operating temperature: -40...85°C
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; SOP-J8
Mounting: SMD
Case: SOP-J8
Kind of package: reel; tape
Memory: 2kb EEPROM
Operating temperature: -40...85°C
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
BR24L02FVT-WE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; serial
Mounting: SMD
Case: TSSOP-B8
Kind of package: reel; tape
Memory: 2kb EEPROM
Operating temperature: -40...85°C
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; 2-wire,I2C; 256x8bit; 400kHz; serial
Mounting: SMD
Case: TSSOP-B8
Kind of package: reel; tape
Memory: 2kb EEPROM
Operating temperature: -40...85°C
Supply voltage: 1.7...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of interface: serial
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BD5343G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.3V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.3V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD53
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SML-311UTT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 0.9÷2.5mcd; 1.6x0.8x0.8mm; 2mA; λd: 620nm
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0603
Luminosity: 0.9...2.5mcd
Dimensions: 1.6x0.8x0.8mm
LED current: 2mA
Wavelength: 620nm
LED lens: transparent
Front: flat
Operating voltage: 1.8V DC
Category: SMD colour LEDs
Description: LED; red; SMD; 0603; 0.9÷2.5mcd; 1.6x0.8x0.8mm; 2mA; λd: 620nm
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0603
Luminosity: 0.9...2.5mcd
Dimensions: 1.6x0.8x0.8mm
LED current: 2mA
Wavelength: 620nm
LED lens: transparent
Front: flat
Operating voltage: 1.8V DC
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DAN235ETL |
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Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC75A; double,common cathode; 10nA
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Mounting: SMD
Case: SC75A
Capacitance: 1.2pF
Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC75A; double,common cathode; 10nA
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Mounting: SMD
Case: SC75A
Capacitance: 1.2pF
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DAN235UT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC70,SOT323; double,common cathode
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Mounting: SMD
Case: SC70; SOT323
Capacitance: 1.2pF
Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC70,SOT323; double,common cathode
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Mounting: SMD
Case: SC70; SOT323
Capacitance: 1.2pF
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IMD16AT108 |
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Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.5/0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 82...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 22kΩ
Base resistor: 2.2/100kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.5/0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 82...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 22kΩ
Base resistor: 2.2/100kΩ
на замовлення 1010 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.23 грн |
31+ | 12.54 грн |
100+ | 9.33 грн |
131+ | 6.80 грн |
361+ | 6.42 грн |
IMZ1AT108 | ![]() |
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Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SC74; SOT457
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SC74; SOT457
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
на замовлення 2893 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 54.34 грн |
9+ | 44.49 грн |
25+ | 36.54 грн |
68+ | 34.48 грн |
500+ | 33.26 грн |
QSZ2TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 1.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 30V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT25T
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 280MHz; 300MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 1.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 30V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SOT25T
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 280MHz; 300MHz
на замовлення 2411 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 45.28 грн |
14+ | 27.45 грн |
86+ | 10.47 грн |
235+ | 9.86 грн |
RFN1LAM7STFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 700V; 0.8A; 80ns; SOD128; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Max. off-state voltage: 700V
Max. forward voltage: 1.5V
Load current: 0.8A
Reverse recovery time: 80ns
Max. forward impulse current: 15A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 700V; 0.8A; 80ns; SOD128; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Max. off-state voltage: 700V
Max. forward voltage: 1.5V
Load current: 0.8A
Reverse recovery time: 80ns
Max. forward impulse current: 15A
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RFN1LAM7STR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 700V; 0.8A; 80ns; SOD128; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Max. off-state voltage: 700V
Max. forward voltage: 1.5V
Load current: 0.8A
Reverse recovery time: 80ns
Max. forward impulse current: 15A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 700V; 0.8A; 80ns; SOD128; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Max. off-state voltage: 700V
Max. forward voltage: 1.5V
Load current: 0.8A
Reverse recovery time: 80ns
Max. forward impulse current: 15A
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DTC114YKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SC59; SOT346
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 68
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SC59; SOT346
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 68
Collector current: 0.1A
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.64 грн |
43+ | 9.10 грн |
59+ | 6.57 грн |
100+ | 5.74 грн |
388+ | 2.32 грн |
1067+ | 2.19 грн |
SMLK28WBNCW1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD white LEDs
Description: LED; white; SMD; 5900mcd; 90mA; Lens: transparent; Front: flat
Type of diode: LED
LED colour: white
Mounting: SMD
Luminosity: 5900mcd
LED current: 90mA
LED lens: transparent
Front: flat
Category: SMD white LEDs
Description: LED; white; SMD; 5900mcd; 90mA; Lens: transparent; Front: flat
Type of diode: LED
LED colour: white
Mounting: SMD
Luminosity: 5900mcd
LED current: 90mA
LED lens: transparent
Front: flat
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2SA2119KT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 260MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Frequency: 260MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC59; SOT346
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2SC2412KT146Q |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
на замовлення 2251 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.47 грн |
42+ | 9.25 грн |
100+ | 5.04 грн |
361+ | 2.48 грн |
991+ | 2.35 грн |
2SC2412KT146R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
на замовлення 2912 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.00 грн |
48+ | 8.10 грн |
72+ | 5.34 грн |
100+ | 4.43 грн |
387+ | 2.31 грн |
1063+ | 2.19 грн |
2SC2412KT146S |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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BR24A01AF-WME2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP8
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 128x8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1kb EEPROM
Mounting: SMD
Case: SOP8
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP8
Operating temperature: -40...105°C
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: 2-wire; I2C
Kind of memory: EEPROM
Memory organisation: 128x8bit
Access time: 5ms
Clock frequency: 400kHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1kb EEPROM
Mounting: SMD
Case: SOP8
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BA33BC0T |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO220FP; THT
Tolerance: ±2%
Output voltage: 3.3V
Output current: 1A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...16V
Kind of package: tube
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Operating temperature: -40...105°C
Case: TO220FP
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO220FP; THT
Tolerance: ±2%
Output voltage: 3.3V
Output current: 1A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...16V
Kind of package: tube
Kind of voltage regulator: fixed; LDO; linear
Mounting: THT
Operating temperature: -40...105°C
Case: TO220FP
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BA33BC0FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Tolerance: ±2%
Output voltage: 3.3V
Output current: 1A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...16V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...105°C
Case: TO252-3
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-3; SMD
Tolerance: ±2%
Output voltage: 3.3V
Output current: 1A
Voltage drop: 0.5V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 3...16V
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...105°C
Case: TO252-3
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BA33BC0WFP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
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UDZLVTE-17100 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 100V; SMD; reel,tape; SOD323F; single diode
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Zener voltage: 100V
Leakage current: 0.2µA
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 100V; SMD; reel,tape; SOD323F; single diode
Mounting: SMD
Case: SOD323F
Semiconductor structure: single diode
Zener voltage: 100V
Leakage current: 0.2µA
Power dissipation: 0.2W
Kind of package: reel; tape
Type of diode: Zener
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BA82904YF-CE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 500kHz; Ch: 2; SOP8; ±1.5÷18VDC,3÷36VDC
Mounting: SMT
Operating temperature: -40...125°C
Case: SOP8
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 500kHz
Input offset voltage: 9mV
Kind of package: reel; tape
Slew rate: 0.2V/μs
Input offset current: 50A
Input bias current: 0.1µA
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 500kHz; Ch: 2; SOP8; ±1.5÷18VDC,3÷36VDC
Mounting: SMT
Operating temperature: -40...125°C
Case: SOP8
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 500kHz
Input offset voltage: 9mV
Kind of package: reel; tape
Slew rate: 0.2V/μs
Input offset current: 50A
Input bias current: 0.1µA
Voltage supply range: ± 1.5...18V DC; 3...36V DC
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RSA6.1ENTR |
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Виробник: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; 200W; quadruple,common anode; SOT353
Mounting: SMD
Breakdown voltage: 6.1...7.2V
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2kW
Case: SOT353
Semiconductor structure: common anode; quadruple
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1÷7.2V; 200W; quadruple,common anode; SOT353
Mounting: SMD
Breakdown voltage: 6.1...7.2V
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.2kW
Case: SOT353
Semiconductor structure: common anode; quadruple
на замовлення 1194 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.16 грн |
15+ | 25.84 грн |
100+ | 17.05 грн |
154+ | 5.81 грн |
423+ | 5.50 грн |
RF501BM2SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 0.92V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 0.92V
Max. forward impulse current: 40A
Kind of package: reel; tape
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RR601BM4SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Max. forward voltage: 1.1V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Max. forward voltage: 1.1V
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RR601BM4STL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Max. forward voltage: 1.1V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 6A; DPAK; Ufmax: 1.1V; Ifsm: 40A
Type of diode: rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Kind of package: reel; tape
Max. forward voltage: 1.1V
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BC858BWT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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BA2901SF-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: comparator; Cmp: 4; SMT; SOP14; reel,tape; Iio: 200nA; IB: 0.5uA
Type of integrated circuit: comparator
Case: SOP14
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Number of comparators: 4
Input offset voltage: 15mV
Input offset current: 200nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Category: SMD operational amplifiers
Description: IC: comparator; Cmp: 4; SMT; SOP14; reel,tape; Iio: 200nA; IB: 0.5uA
Type of integrated circuit: comparator
Case: SOP14
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Number of comparators: 4
Input offset voltage: 15mV
Input offset current: 200nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
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BA2901F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: comparator; Cmp: 4; SMT; SOP14; reel,tape; Iio: 200nA; IB: 0.5uA
Type of integrated circuit: comparator
Case: SOP14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of comparators: 4
Input offset voltage: 15mV
Input offset current: 200nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
Category: SMD operational amplifiers
Description: IC: comparator; Cmp: 4; SMT; SOP14; reel,tape; Iio: 200nA; IB: 0.5uA
Type of integrated circuit: comparator
Case: SOP14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of comparators: 4
Input offset voltage: 15mV
Input offset current: 200nA
Input bias current: 0.5µA
Voltage supply range: ± 1...18V DC; 2...36V DC
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RSR025N03FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 2.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 2.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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SP8K32HZGTB |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; Idm: 18A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 2372 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 137.49 грн |
10+ | 88.99 грн |
28+ | 33.64 грн |
75+ | 31.80 грн |
SP8K31FRATB |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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SP8K31HZGTB |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; Idm: 14A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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SP8K33FRATB |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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SP8K33HZGTB |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 5A; Idm: 20A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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DTA144EMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 68
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 68
Frequency: 250MHz
на замовлення 280 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.06 грн |
73+ | 5.27 грн |
102+ | 3.78 грн |
DTA144EKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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DTA144GUAT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base-emitter resistor: 47kΩ
Current gain: 68
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DTA144TUAT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Current gain: 100...600
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DTA144EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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DTA144ECAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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DTA143EMFHAT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 4.7kΩ
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 250MHz
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RB501SM-30FHT2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. forward voltage: 0.35V
Leakage current: 10µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. forward voltage: 0.35V
Leakage current: 10µA
на замовлення 4078 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.70 грн |
59+ | 6.50 грн |
77+ | 4.98 грн |
116+ | 3.30 грн |
571+ | 1.61 грн |
1571+ | 1.51 грн |
BR25G1MF-3GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: SPI
Memory organisation: 128kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: SPI
Memory organisation: 128kx8bit
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.8...5.5V DC
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
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RB021VAM90TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 90V; 0.2A; reel,tape
Mounting: SMD
Max. off-state voltage: 90V
Max. forward voltage: 0.49V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.9mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD323HE
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 90V; 0.2A; reel,tape
Mounting: SMD
Max. off-state voltage: 90V
Max. forward voltage: 0.49V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Leakage current: 0.9mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD323HE
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BD8LB600FS-CE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 200mA; Ch: 8; SMD; -40÷150°C; 3÷5.5V
Supply voltage: 3...5.5V
Operating temperature: -40...150°C
Kind of integrated circuit: low-side
Protection: over current OCP; overheating OTP; undervoltage UVP
Mounting: SMD
On-state resistance: 1.4Ω
Output current: 0.2A
Type of integrated circuit: power switch
Number of channels: 8
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 200mA; Ch: 8; SMD; -40÷150°C; 3÷5.5V
Supply voltage: 3...5.5V
Operating temperature: -40...150°C
Kind of integrated circuit: low-side
Protection: over current OCP; overheating OTP; undervoltage UVP
Mounting: SMD
On-state resistance: 1.4Ω
Output current: 0.2A
Type of integrated circuit: power switch
Number of channels: 8
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RQ3L050GNTB |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 20A; 14.8W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 20A
Power dissipation: 14.8W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 20A; 14.8W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 20A
Power dissipation: 14.8W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.