Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104132) > Сторінка 240 з 1736
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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DTB713ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 150MW VMT3 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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DTC614TKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 20V 0.6A SMT3Resistor - Base (R1): 10 kOhms Frequency - Transition: 150 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 600 mA Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC614TUT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW UMT3Packaging: Tape & Reel (TR) Resistor - Base (R1): 10 kOhms Frequency - Transition: 150 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 600 mA Part Status: Active Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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EM6K6T2R | Rohm Semiconductor |
Description: MOSFET 2N-CH 20V 0.3A EMT6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT6 Part Status: Active |
на замовлення 5051 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5051 шт В кошику од. на суму грн. | ||||||||||||
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EMD4T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms, 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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EMD5T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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IMD3AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) Supplier Device Package: SMT6 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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QS5U33TR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2A TSMT5 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RSF010P03TL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 1A TUMT3Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TUMT3 Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RTR020N05TL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2A TSMT3 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: TSMT3 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RTR040N03TL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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RUE003N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 300MA EMT3Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V Drain to Source Voltage (Vdss): 20 V Part Status: Not For New Designs Supplier Device Package: EMT3 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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RUM003N02T2L | Rohm Semiconductor |
Description: MOSFET N-CH 20V 300MA VMT3Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Not For New Designs Supplier Device Package: VMT3 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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US5U3TR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 1.5A TUMT5Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): 12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: TUMT5 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 1W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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2SA1807TLP | Rohm Semiconductor |
Description: TRANS PNP 600V 1A CPT3Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: CPT3 Frequency - Transition: 15MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 60mA, 300mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SA2029T2LR | Rohm Semiconductor |
Description: TRANS PNP 50V 0.15A VMT3Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: VMT3 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Current - Collector Cutoff (Max): 100nA (ICBO) |
на замовлення 2938 шт: термін постачання 21-31 дні (днів) |
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2SB1308T100R | Rohm Semiconductor |
Description: TRANS PNP 20V 3A MPT3Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 3 A Part Status: Not For New Designs Supplier Device Package: MPT3 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SB1695KT146 | Rohm Semiconductor |
Description: TRANS PNP 30V 1.5A SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Frequency - Transition: 280MHz Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW |
на замовлення 2792 шт: термін постачання 21-31 дні (днів) |
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2SB1698T100 | Rohm Semiconductor |
Description: TRANS PNP 30V 1.5A SOT-89 |
на замовлення 1369 шт: термін постачання 21-31 дні (днів) |
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2SB1707TL | Rohm Semiconductor |
Description: TRANS PNP 12V 4A TSMT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TSMT3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SB1710TL | Rohm Semiconductor |
Description: TRANS PNP 30V 1A TSMT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: TSMT3 Frequency - Transition: 320MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
на замовлення 710 шт: термін постачання 21-31 дні (днів) |
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2SC3906KT146S | Rohm Semiconductor |
Description: TRANS NPN 120V 0.05A SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Frequency - Transition: 140MHz Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 mW |
на замовлення 5834 шт: термін постачання 21-31 дні (днів) |
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2SD2444KT146R | Rohm Semiconductor |
Description: TRANS NPN 15V 1A SMT3Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 15 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: SMT3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 400mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 350 шт: термін постачання 21-31 дні (днів) |
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2SD2657KT146 | Rohm Semiconductor |
Description: TRANS NPN 30V 1.5A SMT3 |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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2SD2662T100 | Rohm Semiconductor |
Description: TRANS NPN 30V 1.5A SOT-89 |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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2SD2670TL | Rohm Semiconductor |
Description: TRANS NPN 12V 3A TSMT3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TSMT3 Frequency - Transition: 360MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
на замовлення 5291 шт: термін постачання 21-31 дні (днів) |
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2SD2675TL | Rohm Semiconductor |
Description: TRANS NPN 30V 1A TSMT3Frequency - Transition: 320MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: TSMT3 |
на замовлення 2988 шт: термін постачання 21-31 дні (днів) |
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2SD2704KT146 | Rohm Semiconductor |
Description: TRANS NPN 20V 0.3A SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V Frequency - Transition: 35MHz Supplier Device Package: SMT3 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW |
на замовлення 4844 шт: термін постачання 21-31 дні (днів) |
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DTA143ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A VMT3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: VMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 5593 шт: термін постачання 21-31 дні (днів) |
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DTB143TKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 40V 0.5A SMT3Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Resistors Included: R1 Only |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTB513ZETL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 12V 0.5A EMT3Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 260 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: EMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
на замовлення 5852 шт: термін постачання 21-31 дні (днів) |
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DTB713ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 150MW VMT3 |
на замовлення 12624 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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DTC614TKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 20V 0.6A SMT3Resistor - Base (R1): 10 kOhms Frequency - Transition: 150 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 600 mA Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 3975 шт: термін постачання 21-31 дні (днів) |
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DTC614TUT106 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW UMT3Resistor - Base (R1): 10 kOhms Frequency - Transition: 150 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 600 mA Part Status: Active Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 299 шт: термін постачання 21-31 дні (днів) |
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EM6K6T2R | Rohm Semiconductor |
Description: MOSFET 2N-CH 20V 0.3A EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT6 Part Status: Active |
на замовлення 7016 шт: термін постачання 21-31 дні (днів) |
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EMD29T2R | Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 120mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V Frequency - Transition: 250MHz, 260MHz Resistor - Base (R1): 1kOhms, 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: EMT6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EMD4T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Supplier Device Package: EMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms, 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 5974 шт: термін постачання 21-31 дні (днів) |
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EMD5T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 |
на замовлення 22781 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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EMX18T2R | Rohm Semiconductor |
Description: TRANS 2NPN DUAL 12V 500MA EMT6Current - Collector (Ic) (Max): 500mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: EMT6 Frequency - Transition: 320MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Voltage - Collector Emitter Breakdown (Max): 12V |
на замовлення 6725 шт: термін постачання 21-31 дні (днів) |
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EMZ7T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP 12V 0.5A 6EMTPart Status: Active Supplier Device Package: EMT6 Frequency - Transition: 320MHz, 260MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 500mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 1 NPN, 1 PNP Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 7721 шт: термін постачання 21-31 дні (днів) |
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IMD3AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6Power - Max: 300mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) Supplier Device Package: SMT6 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA |
на замовлення 4597 шт: термін постачання 21-31 дні (днів) |
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RSF010P03TL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 1A TUMT3Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TUMT3 Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RTR020N05TL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2A TSMT3 Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
на замовлення 3779 шт: термін постачання 21-31 дні (днів) |
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RTR040N03TL | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RUE003N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 300MA EMT3Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Not For New Designs Supplier Device Package: EMT3 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V |
на замовлення 48574 шт: термін постачання 21-31 дні (днів) |
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RUM003N02T2L | Rohm Semiconductor |
Description: MOSFET N-CH 20V 300MA VMT3Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Not For New Designs Supplier Device Package: VMT3 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 194 шт: термін постачання 21-31 дні (днів) |
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UMX18NTN | Rohm Semiconductor |
Description: TRANS 2NPN DUAL 12V 500MA UMT6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Frequency - Transition: 320MHz Supplier Device Package: UMT6 Part Status: Active |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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US5U3TR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 1.5A TUMT5Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): 12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: TUMT5 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 1W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2639 шт: термін постачання 21-31 дні (днів) |
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DTB713ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 150MW VMT3 |
на замовлення 12624 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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EMD5T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 |
на замовлення 22781 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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MCR006YZPF1502 | Rohm Semiconductor |
Description: RES SMD 15K OHM 1% 1/20W 0201 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCR006YZPF3002 | Rohm Semiconductor |
Description: RES SMD 30K OHM 1% 1/20W 0201 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCR006YZPF1003 | Rohm Semiconductor |
Description: RES SMD 100K OHM 1% 1/20W 0201 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCR006YZPF4701 | Rohm Semiconductor |
Description: RES SMD 4.7K OHM 1% 1/20W 0201 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCR006YZPF8200 | Rohm Semiconductor |
Description: RES SMD 820 OHM 1% 1/20W 0201 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCR006YZPF4532 | Rohm Semiconductor |
Description: RES SMD 45.3K OHM 1% 1/20W 0201 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TCA0G226M8R | Rohm Semiconductor |
Description: CAP TANT 22UF 4V 20% 1206 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TCA0G336M8R | Rohm Semiconductor |
Description: CAP TANT 33UF 4V 20% 1206 |
на замовлення 1732 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TCP0J335M8R | Rohm Semiconductor |
Description: CAP TANT 3.3UF 6.3V 20% 0805 |
на замовлення 4440 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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TCA0J685M8R | Rohm Semiconductor |
Description: CAP TANT 6.8UF 6.3V 20% 1206 |
товару немає в наявності |
В кошику од. на суму грн. |
| DTB713ZMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW VMT3
Description: TRANS PREBIAS PNP 150MW VMT3
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| DTC614TKT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.32 грн |
| DTC614TUT106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| EM6K6T2R |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 0.3A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.3A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
на замовлення 5051 шт:
термін постачання 21-31 дні (днів)
| EMD4T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms, 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms, 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| EMD5T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| IMD3AT108 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.34 грн |
| QS5U33TR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TSMT5
Description: MOSFET P-CH 30V 2A TSMT5
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RSF010P03TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 1A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TUMT3
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 1A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TUMT3
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RTR020N05TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Description: MOSFET N-CH 45V 2A TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 24.97 грн |
| RTR040N03TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RUE003N02TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA EMT3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Not For New Designs
Supplier Device Package: EMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Description: MOSFET N-CH 20V 300MA EMT3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Not For New Designs
Supplier Device Package: EMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.40 грн |
| 6000+ | 5.59 грн |
| 9000+ | 5.29 грн |
| 15000+ | 4.66 грн |
| 21000+ | 4.47 грн |
| 30000+ | 4.29 грн |
| RUM003N02T2L |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 300MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| US5U3TR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.5A TUMT5
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TUMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 1.5A TUMT5
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TUMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 2SA1807TLP |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 600V 1A CPT3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: CPT3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 60mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: TRANS PNP 600V 1A CPT3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: CPT3
Frequency - Transition: 15MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 60mA, 300mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| 2SA2029T2LR |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 50V 0.15A VMT3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: VMT3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Current - Collector Cutoff (Max): 100nA (ICBO)
Description: TRANS PNP 50V 0.15A VMT3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: VMT3
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Current - Collector Cutoff (Max): 100nA (ICBO)
на замовлення 2938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.73 грн |
| 23+ | 13.21 грн |
| 100+ | 8.26 грн |
| 500+ | 5.74 грн |
| 1000+ | 5.09 грн |
| 2000+ | 4.54 грн |
| 2SB1308T100R |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 20V 3A MPT3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 3 A
Part Status: Not For New Designs
Supplier Device Package: MPT3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 20V 3A MPT3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 3 A
Part Status: Not For New Designs
Supplier Device Package: MPT3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SB1695KT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 1.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Description: TRANS PNP 30V 1.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Frequency - Transition: 280MHz
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
на замовлення 2792 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.38 грн |
| 11+ | 29.29 грн |
| 100+ | 18.80 грн |
| 500+ | 13.40 грн |
| 1000+ | 12.03 грн |
| 2SB1698T100 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 1.5A SOT-89
Description: TRANS PNP 30V 1.5A SOT-89
на замовлення 1369 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.11 грн |
| 10+ | 35.85 грн |
| 100+ | 26.75 грн |
| 500+ | 19.72 грн |
| 2SB1707TL |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 12V 4A TSMT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TSMT3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Description: TRANS PNP 12V 4A TSMT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TSMT3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 40mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SB1710TL |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 1A TSMT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TSMT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Description: TRANS PNP 30V 1A TSMT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TSMT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
на замовлення 710 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.84 грн |
| 10+ | 30.27 грн |
| 100+ | 21.05 грн |
| 500+ | 15.42 грн |
| 2SC3906KT146S |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 120V 0.05A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Description: TRANS NPN 120V 0.05A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
на замовлення 5834 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.62 грн |
| 14+ | 22.27 грн |
| 100+ | 14.17 грн |
| 500+ | 10.02 грн |
| 1000+ | 8.96 грн |
| 2SD2444KT146R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 15V 1A SMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 15V 1A SMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.87 грн |
| 10+ | 32.91 грн |
| 100+ | 21.28 грн |
| 2SD2657KT146 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1.5A SMT3
Description: TRANS NPN 30V 1.5A SMT3
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.35 грн |
| 12+ | 26.12 грн |
| 2SD2662T100 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1.5A SOT-89
Description: TRANS NPN 30V 1.5A SOT-89
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| 2SD2670TL |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 12V 3A TSMT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TSMT3
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Description: TRANS NPN 12V 3A TSMT3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TSMT3
Frequency - Transition: 360MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
на замовлення 5291 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.57 грн |
| 10+ | 35.63 грн |
| 100+ | 23.01 грн |
| 500+ | 16.49 грн |
| 1000+ | 14.84 грн |
| 2SD2675TL |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 1A TSMT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TSMT3
Description: TRANS NPN 30V 1A TSMT3
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TSMT3
на замовлення 2988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.52 грн |
| 10+ | 31.25 грн |
| 100+ | 20.17 грн |
| 500+ | 14.45 грн |
| 1000+ | 13.00 грн |
| 2SD2704KT146 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 20V 0.3A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V
Frequency - Transition: 35MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Description: TRANS NPN 20V 0.3A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 4ma, 2V
Frequency - Transition: 35MHz
Supplier Device Package: SMT3
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
на замовлення 4844 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.43 грн |
| 19+ | 16.08 грн |
| 100+ | 10.11 грн |
| 500+ | 7.07 грн |
| 1000+ | 6.29 грн |
| DTA143ZMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 5593 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.38 грн |
| 26+ | 11.77 грн |
| 100+ | 7.35 грн |
| 500+ | 5.09 грн |
| 1000+ | 4.50 грн |
| 2000+ | 4.01 грн |
| DTB143TKT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 40V 0.5A SMT3
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 40V 0.5A SMT3
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistors Included: R1 Only
товару немає в наявності
В кошику
од. на суму грн.
| DTB513ZETL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
на замовлення 5852 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.06 грн |
| 15+ | 21.36 грн |
| 100+ | 13.54 грн |
| 500+ | 9.53 грн |
| 1000+ | 8.50 грн |
| DTB713ZMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW VMT3
Description: TRANS PREBIAS PNP 150MW VMT3
на замовлення 12624 шт:
термін постачання 21-31 дні (днів)
| DTC614TKT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 3975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.70 грн |
| 14+ | 23.02 грн |
| 100+ | 11.59 грн |
| 500+ | 9.64 грн |
| 1000+ | 7.50 грн |
| DTC614TUT106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 200MW UMT3
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 13+ | 23.40 грн |
| 100+ | 15.92 грн |
| EM6K6T2R |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 0.3A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
Description: MOSFET 2N-CH 20V 0.3A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
на замовлення 7016 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.54 грн |
| 13+ | 24.83 грн |
| 100+ | 15.87 грн |
| 500+ | 11.27 грн |
| 1000+ | 10.09 грн |
| 2000+ | 9.11 грн |
| EMD29T2R |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 120mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 1kOhms, 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Description: TRANS PREBIAS 1NPN 1PNP EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 120mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 1kOhms, 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.19 грн |
| 14+ | 23.17 грн |
| 100+ | 14.77 грн |
| 500+ | 10.46 грн |
| 1000+ | 9.36 грн |
| 2000+ | 8.43 грн |
| EMD4T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms, 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Supplier Device Package: EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms, 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 5974 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.43 грн |
| 15+ | 20.38 грн |
| 100+ | 12.24 грн |
| 500+ | 10.63 грн |
| 1000+ | 7.23 грн |
| 2000+ | 6.66 грн |
| EMD5T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
на замовлення 22781 шт:
термін постачання 21-31 дні (днів)
| EMX18T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN DUAL 12V 500MA EMT6
Current - Collector (Ic) (Max): 500mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max): 12V
Description: TRANS 2NPN DUAL 12V 500MA EMT6
Current - Collector (Ic) (Max): 500mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max): 12V
на замовлення 6725 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.43 грн |
| 10+ | 33.66 грн |
| 100+ | 21.78 грн |
| 500+ | 15.64 грн |
| 1000+ | 14.09 грн |
| 2000+ | 12.79 грн |
| EMZ7T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 12V 0.5A 6EMT
Part Status: Active
Supplier Device Package: EMT6
Frequency - Transition: 320MHz, 260MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 500mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP 12V 0.5A 6EMT
Part Status: Active
Supplier Device Package: EMT6
Frequency - Transition: 320MHz, 260MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 500mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 7721 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.71 грн |
| 10+ | 37.59 грн |
| 100+ | 24.32 грн |
| 500+ | 17.46 грн |
| 1000+ | 15.73 грн |
| 2000+ | 14.28 грн |
| IMD3AT108 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Description: TRANS PREBIAS 1NPN 1PNP 50V SMT6
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Supplier Device Package: SMT6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
на замовлення 4597 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.62 грн |
| 14+ | 22.19 грн |
| 100+ | 14.13 грн |
| 500+ | 9.96 грн |
| 1000+ | 8.90 грн |
| RSF010P03TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 1A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TUMT3
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 1A TUMT3
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TUMT3
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
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| RTR020N05TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Description: MOSFET N-CH 45V 2A TSMT3
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
на замовлення 3779 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.19 грн |
| 10+ | 58.87 грн |
| 100+ | 38.90 грн |
| 500+ | 28.45 грн |
| 1000+ | 25.86 грн |
| RTR040N03TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
Description: MOSFET N-CH 30V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V
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| RUE003N02TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA EMT3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Not For New Designs
Supplier Device Package: EMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Description: MOSFET N-CH 20V 300MA EMT3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Not For New Designs
Supplier Device Package: EMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
на замовлення 48574 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 18+ | 17.44 грн |
| 100+ | 11.00 грн |
| 500+ | 7.71 грн |
| 1000+ | 6.86 грн |
| RUM003N02T2L |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 300MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 300MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Not For New Designs
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 4V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.35 грн |
| 13+ | 24.23 грн |
| 100+ | 16.48 грн |
| UMX18NTN |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN DUAL 12V 500MA UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: UMT6
Part Status: Active
Description: TRANS 2NPN DUAL 12V 500MA UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: UMT6
Part Status: Active
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.25 грн |
| 11+ | 27.63 грн |
| 100+ | 17.74 грн |
| US5U3TR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.5A TUMT5
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TUMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 1.5A TUMT5
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: TUMT5
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2639 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.46 грн |
| 10+ | 38.27 грн |
| 100+ | 26.50 грн |
| 500+ | 20.78 грн |
| 1000+ | 17.68 грн |
| DTB713ZMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW VMT3
Description: TRANS PREBIAS PNP 150MW VMT3
на замовлення 12624 шт:
термін постачання 21-31 дні (днів)
| EMD5T2R |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
на замовлення 22781 шт:
термін постачання 21-31 дні (днів)
| MCR006YZPF1502 |
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Виробник: Rohm Semiconductor
Description: RES SMD 15K OHM 1% 1/20W 0201
Description: RES SMD 15K OHM 1% 1/20W 0201
товару немає в наявності
В кошику
од. на суму грн.
| MCR006YZPF3002 |
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Виробник: Rohm Semiconductor
Description: RES SMD 30K OHM 1% 1/20W 0201
Description: RES SMD 30K OHM 1% 1/20W 0201
товару немає в наявності
В кошику
од. на суму грн.
| MCR006YZPF1003 |
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Виробник: Rohm Semiconductor
Description: RES SMD 100K OHM 1% 1/20W 0201
Description: RES SMD 100K OHM 1% 1/20W 0201
товару немає в наявності
В кошику
од. на суму грн.
| MCR006YZPF4701 |
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Виробник: Rohm Semiconductor
Description: RES SMD 4.7K OHM 1% 1/20W 0201
Description: RES SMD 4.7K OHM 1% 1/20W 0201
товару немає в наявності
В кошику
од. на суму грн.
| MCR006YZPF8200 |
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Виробник: Rohm Semiconductor
Description: RES SMD 820 OHM 1% 1/20W 0201
Description: RES SMD 820 OHM 1% 1/20W 0201
товару немає в наявності
В кошику
од. на суму грн.
| MCR006YZPF4532 |
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Виробник: Rohm Semiconductor
Description: RES SMD 45.3K OHM 1% 1/20W 0201
Description: RES SMD 45.3K OHM 1% 1/20W 0201
товару немає в наявності
В кошику
од. на суму грн.
| TCA0G226M8R |
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Виробник: Rohm Semiconductor
Description: CAP TANT 22UF 4V 20% 1206
Description: CAP TANT 22UF 4V 20% 1206
товару немає в наявності
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од. на суму грн.
| TCA0G336M8R |
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Виробник: Rohm Semiconductor
Description: CAP TANT 33UF 4V 20% 1206
Description: CAP TANT 33UF 4V 20% 1206
на замовлення 1732 шт:
термін постачання 21-31 дні (днів)
| TCP0J335M8R |
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Виробник: Rohm Semiconductor
Description: CAP TANT 3.3UF 6.3V 20% 0805
Description: CAP TANT 3.3UF 6.3V 20% 0805
на замовлення 4440 шт:
термін постачання 21-31 дні (днів)
| TCA0J685M8R |
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Виробник: Rohm Semiconductor
Description: CAP TANT 6.8UF 6.3V 20% 1206
Description: CAP TANT 6.8UF 6.3V 20% 1206
товару немає в наявності
В кошику
од. на суму грн.


























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