Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105894) > Сторінка 1750 з 1765
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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RB521SM-40T2R | ROHM SEMICONDUCTOR |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.54V Leakage current: 90µA Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 5694 шт: термін постачання 14-30 дні (днів) |
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SML-D12Y1WT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; yellow; SMD; 0603; 63÷100mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA Type of diode: LED LED colour: yellow Mounting: SMD Case - inch: 0603 Luminosity: 63...100mcd Operating voltage: 2.2V DC Dimensions: 1.6x0.8x0.55mm LED current: 20mA Wavelength: 587...593nm LED lens: transparent Power: 54mW Front: flat Case - mm: 1608 |
на замовлення 3187 шт: термін постачання 14-30 дні (днів) |
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2SCR586D3TL1 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 5A; 10W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 10W Case: DPAK; TO252 Current gain: 120...390 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
на замовлення 405 шт: термін постачання 14-30 дні (днів) |
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SCT3160KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247 Case: TO247 Kind of package: tube Mounting: THT Power dissipation: 103W Gate charge: 42nC Polarisation: unipolar Technology: SiC Drain current: 17A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET On-state resistance: 0.16Ω |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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| BV2HC045EFU-CE2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; Ch: 2; SMD; -40÷150°C; 6÷19V Type of integrated circuit: power switch On-state resistance: 0.1Ω Mounting: SMD Supply voltage: 6...19V Protection: over current OCP; overheating OTP; undervoltage UVP Operating temperature: -40...150°C Kind of integrated circuit: high-side Number of channels: 2 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
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BZX84C8V2LYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 8.2V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX84C8V2LYT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 8.2V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CDZVT2R3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 100mW; 3.6V; SMD; SOD923; single diode; reel,tape Type of diode: Zener Power dissipation: 0.1W Zener voltage: 3.6V Case: SOD923 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KDZVTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.6V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PDZVTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.6V; SMD; SOD128; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Case: SOD128 Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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KDZVTFTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.6V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Case: SOD123F Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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PDZVTFTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 3.6V; SMD; SOD128; single diode; reel,tape Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Case: SOD128 Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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YFZVFHTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 3.6V; SMD; SOD323HE; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Case: SOD323HE Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RXH090N03TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BD5252G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Kind of package: reel; tape Case: SSOP5 Mounting: SMD Type of integrated circuit: supervisor circuit Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: voltage detector Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 5.2V Manufacturer series: BD52 Integrated circuit features: ±1% accuracy |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| EMH25FHAT2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ Mounting: SMD Case: SOT563 Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.15W Collector-emitter voltage: 50V Current gain: 80 Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2SD1484KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346 Polarisation: bipolar Type of transistor: NPN Current gain: 180...390 Kind of package: reel; tape Case: SC59; SOT346 Frequency: 250MHz Collector current: 0.5A Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RGS60TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 30A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 36nC Kind of package: tube Turn-on time: 46ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 405 шт: термін постачання 14-30 дні (днів) |
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| BU4809G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Case: SSOP5 Mounting: SMD Manufacturer series: BU48 Operating temperature: -40...125°C Kind of package: reel; tape Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: voltage detector Supply voltage: 700mV DC...7V DC Threshold on-voltage: 0.9V Number of channels: 1 Integrated circuit features: ±1% accuracy Type of integrated circuit: supervisor circuit |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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RB050L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.55V Max. forward impulse current: 70A Kind of package: reel; tape Leakage current: 1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB058L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 100A Kind of package: reel; tape Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB068L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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UMF28NTR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.15/0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 68...390 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz; 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| RV2C010UNT2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 2A Power dissipation: 0.4W Case: DFN1006-3 Gate-source voltage: ±8V On-state resistance: 1.05Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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R6030JNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247 Mounting: THT Case: TO247 Kind of package: tube Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 143mΩ Pulsed drain current: 90A Power dissipation: 370W Gate charge: 74nC |
на замовлення 525 шт: термін постачання 14-30 дні (днів) |
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RRQ030P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Pulsed drain current: -12A Power dissipation: 1.25W Case: SOT457 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
| RSR025P03FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -10A Drain current: -2.5A Gate charge: 5.4nC On-state resistance: 0.16Ω Power dissipation: 1W Gate-source voltage: ±20V Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||||
| RTF025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Case: TUMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 10A Drain current: 2.5A Gate charge: 3.7nC On-state resistance: 98mΩ Power dissipation: 0.8W Gate-source voltage: ±12V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RSQ025P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -10A Drain current: -2.5A Gate charge: 4.4nC On-state resistance: 0.2Ω Power dissipation: 1.25W Gate-source voltage: ±20V Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||||
| RSR025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 10A Drain current: 2.5A Gate charge: 2.9nC On-state resistance: 0.118Ω Power dissipation: 1W Gate-source voltage: ±20V Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||||
| RTQ025P02FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -10A Drain current: -2.5A Gate charge: 6.4nC On-state resistance: 0.19Ω Power dissipation: 1.25W Gate-source voltage: ±12V Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||||
| RTR025P02FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -10A Drain current: -2.5A Gate charge: 7nC On-state resistance: 0.16Ω Power dissipation: 1W Gate-source voltage: ±12V Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||||
| RUF025N02FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3 Case: TUMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 5A Drain current: 2.5A Gate charge: 5nC On-state resistance: 0.16Ω Power dissipation: 0.8W Gate-source voltage: ±10V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RBR5L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.53V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.2mA |
на замовлення 699 шт: термін постачання 14-30 дні (днів) |
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RB068L100DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.79V Max. forward impulse current: 110A Kind of package: reel; tape Leakage current: 3µA |
на замовлення 1417 шт: термін постачання 14-30 дні (днів) |
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RFN2L6SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SMA; Ufmax: 1.55V; Ifsm: 40A Type of diode: rectifying Case: SMA Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Semiconductor structure: single diode Max. forward voltage: 1.55V Max. forward impulse current: 40A Kind of package: reel; tape Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RFN1L6SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.8A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.45V Max. forward impulse current: 15A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RBR1L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.52V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RF201L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RBR2L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.52V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.15mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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RBR3L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RBR3L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.15mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RF101L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB050L-60DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 70A Kind of package: reel; tape Leakage current: 0.1mA |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
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RRL035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| RSQ035N03FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||||
| RSQ035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||||||
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2SD2351T106W | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323 Collector-emitter voltage: 50V Power dissipation: 0.2W Polarisation: bipolar Type of transistor: NPN Current gain: 820...2700 Kind of package: reel; tape Case: SC70; SOT323 Frequency: 250MHz Collector current: 0.15A Mounting: SMD |
на замовлення 2179 шт: термін постачання 14-30 дні (днів) |
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BAS16HYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS16HYT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RSS100N03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8 Kind of package: reel; tape Case: SOP8 On-state resistance: 18.9mΩ Mounting: SMD Pulsed drain current: 40A Power dissipation: 2W Gate charge: 14nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BC858BWT106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 210...480 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAV99HYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAV99HYT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1SS390SMFHT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape Type of diode: switching Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 35V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC123JMFHAT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Current gain: 80 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MSL0104RGBW1 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; red,blue,green; SMD; 20mA; Lens: white,diffused; Front: flat Mounting: SMD LED colour: blue; green; red LED lens: diffused; white Front: flat Type of diode: LED LED current: 20mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
| RSQ020N03HZGTR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IMX1T110 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
на замовлення 2306 шт: термін постачання 14-30 дні (днів) |
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BSS63AT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 0.1A; 200mW; SOT23 Mounting: SMD Frequency: 200MHz Polarisation: bipolar Type of transistor: PNP Case: SOT23 Collector current: 0.1A Power dissipation: 0.2W Current gain: 30 Collector-emitter voltage: 100V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| RB521SM-40T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Leakage current: 90µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Leakage current: 90µA
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 5694 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 20.10 грн |
| 35+ | 12.13 грн |
| 100+ | 6.70 грн |
| 200+ | 5.62 грн |
| 500+ | 4.50 грн |
| 1000+ | 3.83 грн |
| 2000+ | 3.30 грн |
| 4000+ | 2.87 грн |
| SML-D12Y1WT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 63÷100mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case - inch: 0603
Luminosity: 63...100mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 587...593nm
LED lens: transparent
Power: 54mW
Front: flat
Case - mm: 1608
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0603; 63÷100mcd; 2.2VDC; 1.6x0.8x0.55mm; 20mA
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case - inch: 0603
Luminosity: 63...100mcd
Operating voltage: 2.2V DC
Dimensions: 1.6x0.8x0.55mm
LED current: 20mA
Wavelength: 587...593nm
LED lens: transparent
Power: 54mW
Front: flat
Case - mm: 1608
на замовлення 3187 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.88 грн |
| 51+ | 8.40 грн |
| 100+ | 5.57 грн |
| 500+ | 4.19 грн |
| 1000+ | 3.72 грн |
| 3000+ | 3.31 грн |
| 2SCR586D3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 5A; 10W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 120...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 5A; 10W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 10W
Case: DPAK; TO252
Current gain: 120...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 405 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 106.90 грн |
| 10+ | 62.70 грн |
| 100+ | 42.42 грн |
| 250+ | 36.74 грн |
| SCT3160KLGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247
Case: TO247
Kind of package: tube
Mounting: THT
Power dissipation: 103W
Gate charge: 42nC
Polarisation: unipolar
Technology: SiC
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 0.16Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 17A; 103W; TO247
Case: TO247
Kind of package: tube
Mounting: THT
Power dissipation: 103W
Gate charge: 42nC
Polarisation: unipolar
Technology: SiC
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
On-state resistance: 0.16Ω
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 808.59 грн |
| BV2HC045EFU-CE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 2; SMD; -40÷150°C; 6÷19V
Type of integrated circuit: power switch
On-state resistance: 0.1Ω
Mounting: SMD
Supply voltage: 6...19V
Protection: over current OCP; overheating OTP; undervoltage UVP
Operating temperature: -40...150°C
Kind of integrated circuit: high-side
Number of channels: 2
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 2; SMD; -40÷150°C; 6÷19V
Type of integrated circuit: power switch
On-state resistance: 0.1Ω
Mounting: SMD
Supply voltage: 6...19V
Protection: over current OCP; overheating OTP; undervoltage UVP
Operating temperature: -40...150°C
Kind of integrated circuit: high-side
Number of channels: 2
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BZX84C8V2LYFHT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C8V2LYT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
товару немає в наявності
В кошику
од. на суму грн.
| CDZVT2R3.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 3.6V; SMD; SOD923; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 3.6V
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 3.6V; SMD; SOD923; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 3.6V
Case: SOD923
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| KDZVTR3.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PDZVTR3.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; SOD128; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; SOD128; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
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В кошику
од. на суму грн.
| KDZVTFTR3.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Case: SOD123F
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PDZVTFTR3.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; SOD128; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; SOD128; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Case: SOD128
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| YFZVFHTR3.6B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.6V; SMD; SOD323HE; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.6V; SMD; SOD323HE; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: SOD323HE
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| RXH090N03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BD5252G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Kind of package: reel; tape
Case: SSOP5
Mounting: SMD
Type of integrated circuit: supervisor circuit
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 5.2V
Manufacturer series: BD52
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Kind of package: reel; tape
Case: SSOP5
Mounting: SMD
Type of integrated circuit: supervisor circuit
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 5.2V
Manufacturer series: BD52
Integrated circuit features: ±1% accuracy
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Мінімальне замовлення: 3000 шт
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| EMH25FHAT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ
Mounting: SMD
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 80
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ
Mounting: SMD
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 80
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
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| 2SD1484KT146R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346
Polarisation: bipolar
Type of transistor: NPN
Current gain: 180...390
Kind of package: reel; tape
Case: SC59; SOT346
Frequency: 250MHz
Collector current: 0.5A
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346
Polarisation: bipolar
Type of transistor: NPN
Current gain: 180...390
Kind of package: reel; tape
Case: SC59; SOT346
Frequency: 250MHz
Collector current: 0.5A
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.2W
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| RGS60TS65DHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 111W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Turn-on time: 46ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 405 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 547.28 грн |
| 10+ | 337.66 грн |
| 30+ | 300.33 грн |
| 90+ | 295.24 грн |
| BU4809G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Case: SSOP5
Mounting: SMD
Manufacturer series: BU48
Operating temperature: -40...125°C
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: voltage detector
Supply voltage: 700mV DC...7V DC
Threshold on-voltage: 0.9V
Number of channels: 1
Integrated circuit features: ±1% accuracy
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Case: SSOP5
Mounting: SMD
Manufacturer series: BU48
Operating temperature: -40...125°C
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: voltage detector
Supply voltage: 700mV DC...7V DC
Threshold on-voltage: 0.9V
Number of channels: 1
Integrated circuit features: ±1% accuracy
Type of integrated circuit: supervisor circuit
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Мінімальне замовлення: 3000 шт
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| RB050L-40DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 1mA
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| RB058L-40DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
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| RB068L-40DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
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| UMF28NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15/0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15/0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
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| RV2C010UNT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| R6030JNZ4C13 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 143mΩ
Pulsed drain current: 90A
Power dissipation: 370W
Gate charge: 74nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 143mΩ
Pulsed drain current: 90A
Power dissipation: 370W
Gate charge: 74nC
на замовлення 525 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 599.36 грн |
| 5+ | 487.83 грн |
| 10+ | 453.89 грн |
| 30+ | 415.72 грн |
| 60+ | 386.87 грн |
| 120+ | 357.18 грн |
| 150+ | 349.54 грн |
| 300+ | 330.88 грн |
| 510+ | 320.70 грн |
| RRQ030P03FRATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT457
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT457
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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Мінімальне замовлення: 3 шт
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| RSR025P03FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 5.4nC
On-state resistance: 0.16Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 5.4nC
On-state resistance: 0.16Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3 шт
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| RTF025N03FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 10A
Drain current: 2.5A
Gate charge: 3.7nC
On-state resistance: 98mΩ
Power dissipation: 0.8W
Gate-source voltage: ±12V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 10A
Drain current: 2.5A
Gate charge: 3.7nC
On-state resistance: 98mΩ
Power dissipation: 0.8W
Gate-source voltage: ±12V
Kind of channel: enhancement
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| RSQ025P03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 4.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.25W
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 4.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.25W
Gate-source voltage: ±20V
Kind of channel: enhancement
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Мінімальне замовлення: 3 шт
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од. на суму грн.
| RSR025N03FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 10A
Drain current: 2.5A
Gate charge: 2.9nC
On-state resistance: 0.118Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 10A
Drain current: 2.5A
Gate charge: 2.9nC
On-state resistance: 0.118Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3 шт
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| RTQ025P02FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 6.4nC
On-state resistance: 0.19Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 6.4nC
On-state resistance: 0.19Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3 шт
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| RTR025P02FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 7nC
On-state resistance: 0.16Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 7nC
On-state resistance: 0.16Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3 шт
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| RUF025N02FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 5A
Drain current: 2.5A
Gate charge: 5nC
On-state resistance: 0.16Ω
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 5A
Drain current: 2.5A
Gate charge: 5nC
On-state resistance: 0.16Ω
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of channel: enhancement
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| RBR5L40ADDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.2mA
на замовлення 699 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 72.18 грн |
| 10+ | 48.53 грн |
| 100+ | 34.02 грн |
| 500+ | 27.23 грн |
| RB068L100DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 3µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 3µA
на замовлення 1417 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.77 грн |
| 16+ | 27.15 грн |
| 50+ | 20.19 грн |
| 100+ | 17.56 грн |
| 250+ | 14.17 грн |
| 500+ | 12.39 грн |
| 1000+ | 10.44 грн |
| RFN2L6SDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SMA; Ufmax: 1.55V; Ifsm: 40A
Type of diode: rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 40A
Kind of package: reel; tape
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SMA; Ufmax: 1.55V; Ifsm: 40A
Type of diode: rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 40A
Kind of package: reel; tape
Reverse recovery time: 35ns
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| RFN1L6SDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
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| RBR1L40ADDTE25 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 30A
Kind of package: reel; tape
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| RF201L2SDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
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| RBR2L60BDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
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Мінімальне замовлення: 1500 шт
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| RBR3L40ADDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
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| RBR3L60BDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
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| RF101L2SDDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
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| RB050L-60DDTE25 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.1mA
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Мінімальне замовлення: 1500 шт
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| RRL035P03FRATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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| RSQ035N03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3 шт
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| RSQ035P03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3 шт
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| 2SD2351T106W |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 820...2700
Kind of package: reel; tape
Case: SC70; SOT323
Frequency: 250MHz
Collector current: 0.15A
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Collector-emitter voltage: 50V
Power dissipation: 0.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 820...2700
Kind of package: reel; tape
Case: SC70; SOT323
Frequency: 250MHz
Collector current: 0.15A
Mounting: SMD
на замовлення 2179 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.55 грн |
| 18+ | 24.60 грн |
| 50+ | 16.63 грн |
| 100+ | 14.00 грн |
| 500+ | 9.84 грн |
| 1000+ | 8.65 грн |
| BAS16HYFHT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
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| BAS16HYT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Max. load current: 0.5A
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| RSS100N03HZGTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Kind of package: reel; tape
Case: SOP8
On-state resistance: 18.9mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 2W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2W; SOP8
Kind of package: reel; tape
Case: SOP8
On-state resistance: 18.9mΩ
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 2W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
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| BC858BWT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| BAV99HYFHT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
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| BAV99HYT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
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| 1SS390SMFHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC79,SOD523; Ufmax: 1V; reel,tape
Type of diode: switching
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
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| DTC123JMFHAT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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| MSL0104RGBW1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red,blue,green; SMD; 20mA; Lens: white,diffused; Front: flat
Mounting: SMD
LED colour: blue; green; red
LED lens: diffused; white
Front: flat
Type of diode: LED
LED current: 20mA
Category: SMD colour LEDs
Description: LED; red,blue,green; SMD; 20mA; Lens: white,diffused; Front: flat
Mounting: SMD
LED colour: blue; green; red
LED lens: diffused; white
Front: flat
Type of diode: LED
LED current: 20mA
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Мінімальне замовлення: 1000 шт
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| RSQ020N03HZGTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IMX1T110 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
на замовлення 2306 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 21.01 грн |
| 30+ | 14.25 грн |
| 100+ | 9.16 грн |
| 250+ | 8.06 грн |
| 500+ | 7.30 грн |
| 1000+ | 6.62 грн |
| BSS63AT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 200mW; SOT23
Mounting: SMD
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 30
Collector-emitter voltage: 100V
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 200mW; SOT23
Mounting: SMD
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 30
Collector-emitter voltage: 100V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.