Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (105894) > Сторінка 875 з 1765
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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BM2SC121FP2-LBZE2 | Rohm Semiconductor |
Description: IC OFFLINE SW FLYBACK TO263-7Part Status: Active Control Features: EN, Frequency Control, Soft Start Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: TO-263-7 Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Topology: Flyback Internal Switch(s): Yes Frequency - Switching: 120kHz Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Output Isolation: Isolated Voltage - Breakdown: 1700V |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
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BM2SC121FP2-LBZE2 | Rohm Semiconductor |
Description: IC OFFLINE SW FLYBACK TO263-7Part Status: Active Control Features: EN, Frequency Control, Soft Start Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: TO-263-7 Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Voltage - Breakdown: 1700V Internal Switch(s): Yes Frequency - Switching: 120kHz Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Topology: Flyback Output Isolation: Isolated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RGTV80TK65DGVC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 39A TO-3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 101 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/113ns Switching Energy: 1.02mJ (on), 710µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 81 nC Part Status: Active Current - Collector (Ic) (Max): 39 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 85 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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MCR03EZPFX8203 | Rohm Semiconductor |
Description: RES SMD 820K OHM 1% 1/10W 0603Resistance: 820 kOhms Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0603 (1608 Metric) Features: Automotive AEC-Q200 Tolerance: ±1% Power (Watts): 0.1W, 1/10W Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MCR03EZPFX8202 | Rohm Semiconductor |
Description: RES SMD 82K OHM 1% 1/10W 0603Resistance: 82 kOhms Height - Seated (Max): 0.022" (0.55mm) Supplier Device Package: 0603 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Temperature Coefficient: ±100ppm/°C Package / Case: 0603 (1608 Metric) Features: Automotive AEC-Q200 Tolerance: ±1% Power (Watts): 0.1W, 1/10W Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMT1NFHATN | Rohm Semiconductor |
Description: TRANS 2PNP DUAL 50V 150MA UMT6Current - Collector (Ic) (Max): 150mA Power - Max: 150mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Grade: Automotive Qualification: AEC-Q101 Part Status: Active Supplier Device Package: UMT6 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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UMH11NFHATN | Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V UMT6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: UMT6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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UMH11NFHATN | Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V UMT6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: UMT6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3553 шт: термін постачання 21-31 дні (днів) |
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BD57021MWV-E2 | Rohm Semiconductor |
Description: IC WIRELESS PWR TX UQFN040V5050Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 4.2V ~ 5.3V Applications: Wireless Power Transmitter Current - Supply: 15mA Supplier Device Package: UQFN040V5050 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDR10EZPJ121 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPower (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 120 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ121 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPResistance: 120 Ohms Height - Seated (Max): 0.026" (0.65mm) Supplier Device Package: 0805 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Temperature Coefficient: ±200ppm/°C Package / Case: 0805 (2012 Metric) Features: Automotive AEC-Q200, Pulse Withstanding Tolerance: ±5% Power (Watts): 0.5W, 1/2W Packaging: Cut Tape (CT) |
на замовлення 9318 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ121 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSResistance: 120 Ohms Height - Seated (Max): 0.016" (0.40mm) Supplier Device Package: 0402 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Temperature Coefficient: ±200ppm/°C Package / Case: 0402 (1005 Metric) Features: Anti-Sulfur, Automotive AEC-Q200 Tolerance: ±5% Power (Watts): 0.063W, 1/16W Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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SFR01MZPJ121 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSResistance: 120 Ohms Height - Seated (Max): 0.016" (0.40mm) Supplier Device Package: 0402 Number of Terminations: 2 Ratings: AEC-Q200 Operating Temperature: -55°C ~ 155°C Composition: Thick Film Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Temperature Coefficient: ±200ppm/°C Package / Case: 0402 (1005 Metric) Features: Anti-Sulfur, Automotive AEC-Q200 Tolerance: ±5% Power (Watts): 0.063W, 1/16W Packaging: Cut Tape (CT) |
на замовлення 9989 шт: термін постачання 21-31 дні (днів) |
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UMT4403U3T106 | Rohm Semiconductor |
Description: TRANS PNP 40V 0.6A UMT3Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 600 mA Part Status: Active Supplier Device Package: UMT3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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UMT4403U3T106 | Rohm Semiconductor |
Description: TRANS PNP 40V 0.6A UMT3Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 600 mA Part Status: Active Supplier Device Package: UMT3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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RBR10NS60ATL | Rohm Semiconductor |
Description: RBR10NS60A IS SCHOTTKY BARRIER D |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBR10NS60ATL | Rohm Semiconductor |
Description: RBR10NS60A IS SCHOTTKY BARRIER D |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBR30NS60ATL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 15A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A Current - Reverse Leakage @ Vr: 600 µA @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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RBR30NS60ATL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 15A LPDSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A Current - Reverse Leakage @ Vr: 600 µA @ 60 V |
на замовлення 945 шт: термін постачання 21-31 дні (днів) |
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RBR20NS60ATL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 10A LPDSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBR20NS60ATL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 10A LPDSPackaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 400 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: 150°C Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBR10NS60AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 10A LPDS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RBR10NS60AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 10A LPDS |
на замовлення 999 шт: термін постачання 21-31 дні (днів) |
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RBR20NS60AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 20A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 400 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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RBR20NS60AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 20A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 400 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 855 шт: термін постачання 21-31 дні (днів) |
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RBR30NS60AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 30A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 600 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBR30NS60AFHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 60V 30A LPDSQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 600 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1330 шт: термін постачання 21-31 дні (днів) |
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ML620Q156B-628TBZWAX | Rohm Semiconductor |
Description: IC MCU 16BIT 64KB FLASH 52TQFPPackaging: Bulk Package / Case: 52-TQFP Mounting Type: Surface Mount Speed: 8.4MHz Program Memory Size: 64KB (32K x 16) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: nX-U16/100 Data Converters: A/D 12x10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 52-TQFP (10x10) Part Status: Last Time Buy Number of I/O: 34 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BU7232YFVM-CTR | Rohm Semiconductor | Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BU7232YFVM-CTR | Rohm Semiconductor | Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT |
на замовлення 2006 шт: термін постачання 21-31 дні (днів) |
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BD5291FVE-GTR | Rohm Semiconductor |
Description: INPUT/OUTPUT FULL SWING LOW INPUVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 1.7 V Current - Output / Channel: 35 mA Number of Circuits: 1 Part Status: Active Supplier Device Package: 5-VSOF Voltage - Input Offset: 100 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 3.2 MHz Slew Rate: 2.5V/µs Current - Supply: 650µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: SOT-665 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD5291FVE-GTR | Rohm Semiconductor |
Description: INPUT/OUTPUT FULL SWING LOW INPUVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 1.7 V Current - Output / Channel: 35 mA Number of Circuits: 1 Part Status: Active Supplier Device Package: 5-VSOF Voltage - Input Offset: 100 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 3.2 MHz Slew Rate: 2.5V/µs Current - Supply: 650µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Output Type: Rail-to-Rail Package / Case: SOT-665 Packaging: Cut Tape (CT) |
на замовлення 2906 шт: термін постачання 21-31 дні (днів) |
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RFUH10TB4SNZC9 | Rohm Semiconductor |
Description: DIODE STANDARD 430V 10A TO220NFMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 430 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 430 V |
на замовлення 394 шт: термін постачання 21-31 дні (днів) |
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RGT20TM65DGC9 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 10A TO220NFMPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/32ns Test Condition: 400V, 10A, 10Ohm, 15V Gate Charge: 22 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 30 A Power - Max: 25 W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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RFN10TF6SC9 | Rohm Semiconductor |
Description: DIODE STANDARD 600V 10A TO220NFMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 708 шт: термін постачання 21-31 дні (днів) |
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DA204UMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 20V 100MA UMD3FCurrent - Reverse Leakage @ Vr: 100 nA @ 15 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: UMD3F Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| ML610Q174-482GAZWAX | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFPNumber of I/O: 49 Part Status: Last Time Buy Supplier Device Package: 80-QFP (14x20) Peripherals: LCD, POR, PWM, WDT Connectivity: I²C, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 12x10b Core Processor: nX-U8/100 EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 128KB (64K x 16) Speed: 8.4MHz Mounting Type: Surface Mount DigiKey Programmable: Not Verified Package / Case: 80-BQFP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q151BT-NNNTBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q151BT-108TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q151BT-106TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q151BT-110TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q151BT-103TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q151BT-Z99TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q151BT-104TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q151BT-107TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML620Q151BT-105TBWNX | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
2SA1579U3HZGT106R | Rohm Semiconductor |
Description: TRANS PNP 120V 0.05A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Frequency - Transition: 140MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SA1579U3HZGT106R | Rohm Semiconductor |
Description: TRANS PNP 120V 0.05A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Frequency - Transition: 140MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 mW |
на замовлення 4808 шт: термін постачання 21-31 дні (днів) |
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| ML610Q174-499GAZWAX | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFPPart Status: Last Time Buy Supplier Device Package: 80-QFP (14x20) Peripherals: LCD, POR, PWM, WDT Connectivity: I²C, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 12x10b Core Processor: nX-U8/100 EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 128KB (64K x 16) Package / Case: 80-BQFP Packaging: Bulk Number of I/O: 49 DigiKey Programmable: Not Verified Speed: 8.4MHz Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
R6014YNXC7G | Rohm Semiconductor |
Description: 600V 9A TO-220FM, FAST SWITCHINGDrive Voltage (Max Rds On, Min Rds On): 10V, 12V Part Status: Active Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 6V @ 1.4mA Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V |
на замовлення 1003 шт: термін постачання 21-31 дні (днів) |
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MMBZ33VALYT116 | Rohm Semiconductor |
Description: 26V, SOT-23, DUAL LINE, ANODE CO |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BAS116HYFHT116 | Rohm Semiconductor |
Description: DIODE STANDARD 80V 215MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BAS116HYFHT116 | Rohm Semiconductor |
Description: DIODE STANDARD 80V 215MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Qualification: AEC-Q101 |
на замовлення 788 шт: термін постачання 21-31 дні (днів) |
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| ML610Q174-467GAZWAX | Rohm Semiconductor |
Description: IC MCU 8BIT 128KB FLASH 80QFPNumber of I/O: 49 Part Status: Last Time Buy Supplier Device Package: 80-QFP (14x20) Peripherals: LCD, POR, PWM, WDT Connectivity: I²C, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 12x10b Core Processor: nX-U8/100 EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 128KB (64K x 16) Speed: 8.4MHz Mounting Type: Surface Mount Package / Case: 80-BQFP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
UT6K3TCR1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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UT6KB5TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 5A HUML2020L8Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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UT6KB5TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 40V 5A HUML2020L8Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) |
на замовлення 1122 шт: термін постачання 21-31 дні (днів) |
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UT6JC5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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UT6JC5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8Part Status: Active Supplier Device Package: HUML2020L8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) |
на замовлення 371 шт: термін постачання 21-31 дні (днів) |
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2SCR564F3TR | Rohm Semiconductor |
Description: TRANS NPN 80V 4A HUML2020L3Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 4 A Part Status: Active Supplier Device Package: HUML2020L3 Frequency - Transition: 280MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| BM2SC121FP2-LBZE2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Output Isolation: Isolated
Voltage - Breakdown: 1700V
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Output Isolation: Isolated
Voltage - Breakdown: 1700V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| BM2SC121FP2-LBZE2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Topology: Flyback
Output Isolation: Isolated
Description: IC OFFLINE SW FLYBACK TO263-7
Part Status: Active
Control Features: EN, Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-263-7
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Voltage - Breakdown: 1700V
Internal Switch(s): Yes
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Topology: Flyback
Output Isolation: Isolated
товару немає в наявності
В кошику
од. на суму грн.
| RGTV80TK65DGVC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/113ns
Switching Energy: 1.02mJ (on), 710µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 85 W
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/113ns
Switching Energy: 1.02mJ (on), 710µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 85 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 587.56 грн |
| 30+ | 328.69 грн |
| 120+ | 276.73 грн |
| MCR03EZPFX8203 |
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Виробник: Rohm Semiconductor
Description: RES SMD 820K OHM 1% 1/10W 0603
Resistance: 820 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
Description: RES SMD 820K OHM 1% 1/10W 0603
Resistance: 820 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| MCR03EZPFX8202 |
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Виробник: Rohm Semiconductor
Description: RES SMD 82K OHM 1% 1/10W 0603
Resistance: 82 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
Description: RES SMD 82K OHM 1% 1/10W 0603
Resistance: 82 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| UMT1NFHATN |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP DUAL 50V 150MA UMT6
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: UMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Description: TRANS 2PNP DUAL 50V 150MA UMT6
Current - Collector (Ic) (Max): 150mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: UMT6
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| UMH11NFHATN |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| UMH11NFHATN |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3553 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.68 грн |
| 15+ | 20.69 грн |
| 100+ | 13.14 грн |
| 500+ | 9.24 грн |
| 1000+ | 8.24 грн |
| BD57021MWV-E2 |
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Виробник: Rohm Semiconductor
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 4.2V ~ 5.3V
Applications: Wireless Power Transmitter
Current - Supply: 15mA
Supplier Device Package: UQFN040V5050
Part Status: Obsolete
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 4.2V ~ 5.3V
Applications: Wireless Power Transmitter
Current - Supply: 15mA
Supplier Device Package: UQFN040V5050
Part Status: Obsolete
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| SDR10EZPJ121 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.45 грн |
| SDR10EZPJ121 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 120 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
Description: HIGH ANTI-SURGE THICK FILM CHIP
Resistance: 120 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
на замовлення 9318 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.44 грн |
| 36+ | 8.55 грн |
| 54+ | 5.73 грн |
| 100+ | 4.58 грн |
| 500+ | 3.28 грн |
| 1000+ | 2.89 грн |
| SFR01MZPJ121 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 120 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Tape & Reel (TR)
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 120 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| SFR01MZPJ121 |
![]() |
Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 120 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 120 Ohms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
на замовлення 9989 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.52 грн |
| 73+ | 4.20 грн |
| 112+ | 2.75 грн |
| 132+ | 2.19 грн |
| 500+ | 1.54 грн |
| 1000+ | 1.34 грн |
| 5000+ | 0.99 грн |
| UMT4403U3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PNP 40V 0.6A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| UMT4403U3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 40V 0.6A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PNP 40V 0.6A UMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.03 грн |
| 12+ | 26.88 грн |
| 100+ | 18.30 грн |
| 500+ | 13.48 грн |
| 1000+ | 12.26 грн |
| RBR10NS60ATL |
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Виробник: Rohm Semiconductor
Description: RBR10NS60A IS SCHOTTKY BARRIER D
Description: RBR10NS60A IS SCHOTTKY BARRIER D
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 45.28 грн |
| RBR10NS60ATL |
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Виробник: Rohm Semiconductor
Description: RBR10NS60A IS SCHOTTKY BARRIER D
Description: RBR10NS60A IS SCHOTTKY BARRIER D
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.12 грн |
| 10+ | 85.75 грн |
| 100+ | 66.87 грн |
| 500+ | 51.83 грн |
| RBR30NS60ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| RBR30NS60ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 15A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.07 грн |
| 10+ | 97.81 грн |
| 100+ | 69.62 грн |
| 500+ | 53.60 грн |
| RBR20NS60ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 53.46 грн |
| RBR20NS60ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: 150°C
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.60 грн |
| RBR10NS60AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
товару немає в наявності
В кошику
од. на суму грн.
| RBR10NS60AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
Description: DIODE ARRAY SCHOTT 60V 10A LPDS
на замовлення 999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.81 грн |
| 10+ | 76.51 грн |
| 100+ | 59.61 грн |
| 500+ | 46.21 грн |
| RBR20NS60AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| RBR20NS60AFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 60V 20A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 855 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.29 грн |
| 10+ | 80.48 грн |
| 100+ | 62.60 грн |
| 500+ | 49.80 грн |
| RBR30NS60AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 59.32 грн |
| RBR30NS60AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 60V 30A LPDS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 184.75 грн |
| 10+ | 114.08 грн |
| 50+ | 86.57 грн |
| 100+ | 72.91 грн |
| 500+ | 55.00 грн |
| ML620Q156B-628TBZWAX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 52TQFP
Packaging: Bulk
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Last Time Buy
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 52TQFP
Packaging: Bulk
Package / Case: 52-TQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U16/100
Data Converters: A/D 12x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 52-TQFP (10x10)
Part Status: Last Time Buy
Number of I/O: 34
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| BU7232YFVM-CTR |
Виробник: Rohm Semiconductor
Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BU7232YFVM-CTR |
Виробник: Rohm Semiconductor
Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
Description: RAIL-TO-RAIL INPUT PUSH-PULL OUT
на замовлення 2006 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.15 грн |
| 10+ | 102.32 грн |
| 25+ | 96.54 грн |
| 100+ | 77.20 грн |
| 250+ | 72.49 грн |
| 500+ | 63.43 грн |
| 1000+ | 51.69 грн |
| BD5291FVE-GTR |
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Виробник: Rohm Semiconductor
Description: INPUT/OUTPUT FULL SWING LOW INPU
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.7 V
Current - Output / Channel: 35 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-VSOF
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 3.2 MHz
Slew Rate: 2.5V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SOT-665
Packaging: Tape & Reel (TR)
Description: INPUT/OUTPUT FULL SWING LOW INPU
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.7 V
Current - Output / Channel: 35 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-VSOF
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 3.2 MHz
Slew Rate: 2.5V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SOT-665
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD5291FVE-GTR |
![]() |
Виробник: Rohm Semiconductor
Description: INPUT/OUTPUT FULL SWING LOW INPU
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.7 V
Current - Output / Channel: 35 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-VSOF
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 3.2 MHz
Slew Rate: 2.5V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SOT-665
Packaging: Cut Tape (CT)
Description: INPUT/OUTPUT FULL SWING LOW INPU
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.7 V
Current - Output / Channel: 35 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: 5-VSOF
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 3.2 MHz
Slew Rate: 2.5V/µs
Current - Supply: 650µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: SOT-665
Packaging: Cut Tape (CT)
на замовлення 2906 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.88 грн |
| 10+ | 40.09 грн |
| 25+ | 36.04 грн |
| 100+ | 29.69 грн |
| 250+ | 27.73 грн |
| 500+ | 26.54 грн |
| 1000+ | 26.10 грн |
| RFUH10TB4SNZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 430V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Description: DIODE STANDARD 430V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
на замовлення 394 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.96 грн |
| 10+ | 99.26 грн |
| 50+ | 75.20 грн |
| 100+ | 63.27 грн |
| RGT20TM65DGC9 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/32ns
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 25 W
Description: IGBT TRENCH FS 650V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/32ns
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 25 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| RFN10TF6SC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 10A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 708 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 197.44 грн |
| 10+ | 123.01 грн |
| 50+ | 93.87 грн |
| 100+ | 79.27 грн |
| 500+ | 63.82 грн |
| DA204UMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 20V 100MA UMD3F
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 20V 100MA UMD3F
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: UMD3F
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-85
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ML610Q174-482GAZWAX |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Number of I/O: 49
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 80-BQFP
Packaging: Bulk
Description: IC MCU 8BIT 128KB FLASH 80QFP
Number of I/O: 49
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
DigiKey Programmable: Not Verified
Package / Case: 80-BQFP
Packaging: Bulk
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| ML620Q151BT-NNNTBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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| ML620Q151BT-108TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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| ML620Q151BT-106TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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| ML620Q151BT-110TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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| ML620Q151BT-103TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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| ML620Q151BT-Z99TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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| ML620Q151BT-104TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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| ML620Q151BT-107TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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| ML620Q151BT-105TBWNX |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
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| 2SA1579U3HZGT106R |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.56 грн |
| 2SA1579U3HZGT106R |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
Description: TRANS PNP 120V 0.05A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 mW
на замовлення 4808 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.03 грн |
| 13+ | 25.20 грн |
| 100+ | 16.05 грн |
| 500+ | 11.36 грн |
| 1000+ | 10.16 грн |
| ML610Q174-499GAZWAX |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Package / Case: 80-BQFP
Packaging: Bulk
Number of I/O: 49
DigiKey Programmable: Not Verified
Speed: 8.4MHz
Mounting Type: Surface Mount
Description: IC MCU 8BIT 128KB FLASH 80QFP
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Package / Case: 80-BQFP
Packaging: Bulk
Number of I/O: 49
DigiKey Programmable: Not Verified
Speed: 8.4MHz
Mounting Type: Surface Mount
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| R6014YNXC7G |
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Виробник: Rohm Semiconductor
Description: 600V 9A TO-220FM, FAST SWITCHING
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Description: 600V 9A TO-220FM, FAST SWITCHING
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Part Status: Active
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 5A, 12V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
на замовлення 1003 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.86 грн |
| 50+ | 81.55 грн |
| 100+ | 73.30 грн |
| 500+ | 55.20 грн |
| 1000+ | 50.84 грн |
| MMBZ33VALYT116 |
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Виробник: Rohm Semiconductor
Description: 26V, SOT-23, DUAL LINE, ANODE CO
Description: 26V, SOT-23, DUAL LINE, ANODE CO
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| BAS116HYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BAS116HYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Description: DIODE STANDARD 80V 215MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.17 грн |
| 20+ | 15.35 грн |
| 50+ | 11.06 грн |
| 100+ | 9.05 грн |
| 500+ | 6.71 грн |
| ML610Q174-467GAZWAX |
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Виробник: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Number of I/O: 49
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Bulk
Description: IC MCU 8BIT 128KB FLASH 80QFP
Number of I/O: 49
Part Status: Last Time Buy
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, POR, PWM, WDT
Connectivity: I²C, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x10b
Core Processor: nX-U8/100
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 128KB (64K x 16)
Speed: 8.4MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| UT6K3TCR1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| UT6KB5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| UT6KB5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Description: MOSFET 2N-CH 40V 5A HUML2020L8
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
на замовлення 1122 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.58 грн |
| 10+ | 32.30 грн |
| 25+ | 29.02 грн |
| 100+ | 23.79 грн |
| 250+ | 22.15 грн |
| 500+ | 21.17 грн |
| 1000+ | 20.02 грн |
| UT6JC5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| UT6JC5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 60V 2.5A HUML2020L8
Part Status: Active
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
на замовлення 371 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.39 грн |
| 10+ | 54.67 грн |
| 100+ | 36.01 грн |
| 2SCR564F3TR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 4A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: TRANS NPN 80V 4A HUML2020L3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: HUML2020L3
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.39 грн |



























