Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104137) > Сторінка 279 з 1736
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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RUF025N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 2.5A TUMT3Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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RUL035N02TR | Rohm Semiconductor |
Description: MOSFET N-CH 20V 3.5A TUMT6Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RUQ050N02TR | Rohm Semiconductor |
Description: MOSFET N-CH 20V 5A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RUR040N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 4A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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RVQ040N05TR | Rohm Semiconductor |
Description: MOSFET N-CH 45V 4A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 21V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RZL025P01TR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 2.5A TUMT6Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RZL035P01TR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 3.5A TUMT6 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RZQ050P01TR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 5A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RZR025P01TL | Rohm Semiconductor |
Description: MOSFET P-CH 12V 2.5A TSMT3Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RZR040P01TL | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4A TSMT3Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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US6K4TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 20V 1.5A TUMT6Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Current - Continuous Drain (Id) @ 25°C: 1.5A Drain to Source Voltage (Vdss): 20V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BD6512F-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BD6513F-E2 | Rohm Semiconductor |
Description: IC SWITCH HIGH SIDE 2CH SOP-8 |
на замовлення 2330 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR24S128FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 128K 400KHZ 8TSSOP-B |
на замовлення 6649 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR93L56FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B |
на замовлення 3074 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR93L66FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RTR011P02TL | Rohm Semiconductor | Description: MOSFET P-CH 20V 1.1A TSMT3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RZL035P01TR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 3.5A TUMT6 |
на замовлення 8556 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BD2042AFJ-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 100mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:2 Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD2046AFJ-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 100mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 250mA Ratio - Input:Output: 1:2 Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD2051AFJ-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8Part Status: Not For New Designs Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Supplier Device Package: 8-SOP-J Ratio - Input:Output: 1:1 Current - Output (Max): 500mA Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.7V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 80mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: USB Switch Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-SOIC (0.154", 3.90mm Width) Features: Status Flag Packaging: Cut Tape (CT) |
на замовлення 2139 шт: термін постачання 21-31 дні (днів) |
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BD2052AFJ-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8Part Status: Obsolete Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Supplier Device Package: 8-SOP-J Ratio - Input:Output: 1:2 Current - Output (Max): 500mA Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.7V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 100mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: USB Switch Interface: On/Off Number of Outputs: 2 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-SOIC (0.154", 3.90mm Width) Features: Status Flag Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD2055AFJ-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8Ratio - Input:Output: 1:1 Current - Output (Max): 250mA Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.7V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 80mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: USB Switch Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-SOIC (0.154", 3.90mm Width) Features: Status Flag Packaging: Cut Tape (CT) Supplier Device Package: 8-SOP-J Part Status: Not For New Designs Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
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BD6516F-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD6517F-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BD6519FJ-E2 | Rohm Semiconductor |
Description: IC SWITCH HIGH SIDE 1CH SOP-J8Switch Type: USB Switch Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-SOIC (0.154", 3.90mm Width) Features: Load Discharge, Status Flag Packaging: Cut Tape (CT) Input Type: Non-Inverting Rds On (Typ): 100mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C Part Status: Obsolete Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Supplier Device Package: 8-SOP-J Ratio - Input:Output: 1:1 Current - Output (Max): 500mA Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 3V ~ 5.5V |
на замовлення 2292 шт: термін постачання 21-31 дні (днів) |
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BR24L04FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 4KBIT I2C 8TSSOPBMemory Organization: 512 x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-TSSOP-B Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 4Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Verified |
на замовлення 2917 шт: термін постачання 21-31 дні (днів) |
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BR24L08FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 8KBIT I2C 8TSSOPBDigiKey Programmable: Verified Memory Organization: 1K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-TSSOP-B Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 8Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR24L16FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT I2C 8TSSOPPackage / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Verified Memory Organization: 2K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-TSSOP-B Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR24L32FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 32KBIT I2C 8TSSOPDigiKey Programmable: Verified Memory Organization: 4K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-TSSOP-B Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 32Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 7527 шт: термін постачання 21-31 дні (днів) |
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BR24L64FJ-WE2 | Rohm Semiconductor |
Description: IC EEPROM 64KBIT I2C 8SOPJDigiKey Programmable: Verified Memory Organization: 8K x 8 Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP-J Memory Format: EEPROM Clock Frequency: 400 kHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 64Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 6928 шт: термін постачання 21-31 дні (днів) |
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BR24S128FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 128K 400KHZ 8TSSOP-B |
на замовлення 6649 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR24S256FJ-WE2 | Rohm Semiconductor |
Description: IC EEPROM 256KBIT I2C 8SOPJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BR93L46FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT MICROWIRE 8TSSOPDigiKey Programmable: Not Verified Memory Organization: 64 x 16 Memory Interface: Microwire Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-TSSOP-B Memory Format: EEPROM Clock Frequency: 2 kHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Kbit Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 2934 шт: термін постачання 21-31 дні (днів) |
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BR93L56FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B |
на замовлення 3074 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR93L66FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B |
на замовлення 3032 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BR93L86FJ-WE2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOPJDigiKey Programmable: Verified Memory Organization: 1K x 16 Memory Interface: Microwire Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-SOP-J Memory Format: EEPROM Clock Frequency: 2 MHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EM5K5T2R | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 0.3A EMT5 |
на замовлення 12847 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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EM6M1T2R | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V/20V EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V FET Feature: Logic Level Gate Supplier Device Package: EMT6 Part Status: Not For New Designs |
на замовлення 7965 шт: термін постачання 21-31 дні (днів) |
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QS6K21TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 45V 1A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 1A Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) |
на замовлення 2822 шт: термін постачання 21-31 дні (днів) |
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RRL025P03TR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2.5A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V |
на замовлення 5480 шт: термін постачання 21-31 дні (днів) |
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RRQ045P03TR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 4.5A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V |
на замовлення 5444 шт: термін постачання 21-31 дні (днів) |
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| RRR030P03TL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 3A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V |
на замовлення 5544 шт: термін постачання 21-31 дні (днів) |
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RSQ020N03TR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V |
на замовлення 1408 шт: термін постачання 21-31 дні (днів) |
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RSR030N06TL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 3A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V |
на замовлення 1981 шт: термін постачання 21-31 дні (днів) |
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RTR011P02TL | Rohm Semiconductor | Description: MOSFET P-CH 20V 1.1A TSMT3 |
на замовлення 2672 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RTR025N05TL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2.5A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RTR030N05TL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 3A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V |
на замовлення 39635 шт: термін постачання 21-31 дні (днів) |
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RUE002N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 200MA EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V |
на замовлення 23161 шт: термін постачання 21-31 дні (днів) |
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RUF025N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 2.5A TUMT3Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V |
на замовлення 12930 шт: термін постачання 21-31 дні (днів) |
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RUL035N02TR | Rohm Semiconductor |
Description: MOSFET N-CH 20V 3.5A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V |
на замовлення 643 шт: термін постачання 21-31 дні (днів) |
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RUQ050N02TR | Rohm Semiconductor |
Description: MOSFET N-CH 20V 5A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1.3V @ 1mA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 2786 шт: термін постачання 21-31 дні (днів) |
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RUR040N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 4A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V |
на замовлення 14318 шт: термін постачання 21-31 дні (днів) |
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RVQ040N05TR | Rohm Semiconductor |
Description: MOSFET N-CH 45V 4A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): 21V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 4328 шт: термін постачання 21-31 дні (днів) |
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RZL025P01TR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 2.5A TUMT6Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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RZL035P01TR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 3.5A TUMT6 |
на замовлення 8556 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RZQ050P01TR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 5A TSMT6Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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RZR025P01TL | Rohm Semiconductor |
Description: MOSFET P-CH 12V 2.5A TSMT3Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 8935 шт: термін постачання 21-31 дні (днів) |
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RZR040P01TL | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4A TSMT3Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel |
на замовлення 2965 шт: термін постачання 21-31 дні (днів) |
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US6K4TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 20V 1.5A TUMT6Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Current - Continuous Drain (Id) @ 25°C: 1.5A Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 20V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) |
на замовлення 9287 шт: термін постачання 21-31 дні (днів) |
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| RUF025N02TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.20 грн |
| 6000+ | 14.37 грн |
| 9000+ | 13.75 грн |
| RUL035N02TR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 3.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Description: MOSFET N-CH 20V 3.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RUQ050N02TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RUR040N02TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.78 грн |
| 6000+ | 16.69 грн |
| 9000+ | 15.98 грн |
| RVQ040N05TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
Description: MOSFET N-CH 45V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 19.82 грн |
| RZL025P01TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 2.5A TUMT6
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET P-CH 12V 2.5A TUMT6
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RZL035P01TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 3.5A TUMT6
Description: MOSFET P-CH 12V 3.5A TUMT6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| RZQ050P01TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 12V 5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RZR025P01TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 2.5A TSMT3
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Description: MOSFET P-CH 12V 2.5A TSMT3
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.97 грн |
| 6000+ | 12.76 грн |
| RZR040P01TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A TSMT3
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 12V 4A TSMT3
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| US6K4TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 1.5A TUMT6
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 1.5A TUMT6
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.66 грн |
| 6000+ | 15.67 грн |
| BD6512F-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
| BD6513F-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC SWITCH HIGH SIDE 2CH SOP-8
Description: IC SWITCH HIGH SIDE 2CH SOP-8
на замовлення 2330 шт:
термін постачання 21-31 дні (днів)
| BR24S128FVT-WE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 128K 400KHZ 8TSSOP-B
Description: IC EEPROM 128K 400KHZ 8TSSOP-B
на замовлення 6649 шт:
термін постачання 21-31 дні (днів)
| BR93L56FVT-WE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B
Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B
на замовлення 3074 шт:
термін постачання 21-31 дні (днів)
| BR93L66FVT-WE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B
Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B
товару немає в наявності
В кошику
од. на суму грн.
| RTR011P02TL |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.1A TSMT3
Description: MOSFET P-CH 20V 1.1A TSMT3
товару немає в наявності
В кошику
од. на суму грн.
| RZL035P01TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 3.5A TUMT6
Description: MOSFET P-CH 12V 3.5A TUMT6
на замовлення 8556 шт:
термін постачання 21-31 дні (днів)
| BD2042AFJ-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| BD2046AFJ-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| BD2051AFJ-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-SOP-J
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Status Flag
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-SOP-J
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Status Flag
Packaging: Cut Tape (CT)
на замовлення 2139 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.31 грн |
| 10+ | 138.88 грн |
| 25+ | 117.99 грн |
| 100+ | 88.55 грн |
| 250+ | 77.66 грн |
| 500+ | 70.96 грн |
| 1000+ | 64.28 грн |
| BD2052AFJ-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-SOP-J
Ratio - Input:Output: 1:2
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 100mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Status Flag
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-SOP-J
Ratio - Input:Output: 1:2
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 100mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Status Flag
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BD2055AFJ-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Ratio - Input:Output: 1:1
Current - Output (Max): 250mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Status Flag
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOP-J
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Ratio - Input:Output: 1:1
Current - Output (Max): 250mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.7V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Status Flag
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOP-J
Part Status: Not For New Designs
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 195.95 грн |
| 10+ | 169.22 грн |
| 25+ | 159.62 грн |
| BD6516F-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
товару немає в наявності
В кошику
од. на суму грн.
| BD6517F-E2 |
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Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| BD6519FJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC SWITCH HIGH SIDE 1CH SOP-J8
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Input Type: Non-Inverting
Rds On (Typ): 100mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-SOP-J
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 3V ~ 5.5V
Description: IC SWITCH HIGH SIDE 1CH SOP-J8
Switch Type: USB Switch
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Input Type: Non-Inverting
Rds On (Typ): 100mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Supplier Device Package: 8-SOP-J
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 3V ~ 5.5V
на замовлення 2292 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.52 грн |
| 10+ | 145.82 грн |
| 25+ | 137.55 грн |
| 100+ | 109.98 грн |
| 250+ | 103.27 грн |
| 500+ | 90.36 грн |
| 1000+ | 73.64 грн |
| BR24L04FVT-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT I2C 8TSSOPB
Memory Organization: 512 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT I2C 8TSSOPB
Memory Organization: 512 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Verified
на замовлення 2917 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.52 грн |
| 10+ | 44.83 грн |
| 25+ | 42.75 грн |
| 50+ | 38.72 грн |
| 100+ | 37.34 грн |
| 250+ | 35.61 грн |
| 500+ | 33.79 грн |
| 1000+ | 32.59 грн |
| BR24L08FVT-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 8TSSOPB
DigiKey Programmable: Verified
Memory Organization: 1K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 8KBIT I2C 8TSSOPB
DigiKey Programmable: Verified
Memory Organization: 1K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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од. на суму грн.
| BR24L16FVT-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 8TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Verified
Memory Organization: 2K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Description: IC EEPROM 16KBIT I2C 8TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Verified
Memory Organization: 2K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
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од. на суму грн.
| BR24L32FVT-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 32KBIT I2C 8TSSOP
DigiKey Programmable: Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 7527 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.30 грн |
| 10+ | 74.27 грн |
| 25+ | 72.22 грн |
| 50+ | 66.30 грн |
| 100+ | 64.81 грн |
| 250+ | 62.83 грн |
| 500+ | 60.33 грн |
| 1000+ | 58.86 грн |
| BR24L64FJ-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C 8SOPJ
DigiKey Programmable: Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 64KBIT I2C 8SOPJ
DigiKey Programmable: Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 400 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 6928 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.63 грн |
| 10+ | 109.44 грн |
| 25+ | 106.45 грн |
| 50+ | 99.38 грн |
| 100+ | 88.84 грн |
| 250+ | 88.58 грн |
| 500+ | 85.81 грн |
| 1000+ | 82.17 грн |
| BR24S128FVT-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 128K 400KHZ 8TSSOP-B
Description: IC EEPROM 128K 400KHZ 8TSSOP-B
на замовлення 6649 шт:
термін постачання 21-31 дні (днів)
| BR24S256FJ-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 256KBIT I2C 8SOPJ
Description: IC EEPROM 256KBIT I2C 8SOPJ
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од. на суму грн.
| BR93L46FVT-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT MICROWIRE 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 2 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 1KBIT MICROWIRE 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 64 x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP-B
Memory Format: EEPROM
Clock Frequency: 2 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Kbit
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 2934 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.46 грн |
| 10+ | 43.25 грн |
| 25+ | 40.12 грн |
| 50+ | 37.46 грн |
| 100+ | 33.26 грн |
| 250+ | 32.84 грн |
| 500+ | 31.81 грн |
| 1000+ | 30.96 грн |
| BR93L56FVT-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B
Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B
на замовлення 3074 шт:
термін постачання 21-31 дні (днів)
| BR93L66FVT-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B
Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B
на замовлення 3032 шт:
термін постачання 21-31 дні (днів)
| BR93L86FJ-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOPJ
DigiKey Programmable: Verified
Memory Organization: 1K x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 2 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOPJ
DigiKey Programmable: Verified
Memory Organization: 1K x 16
Memory Interface: Microwire
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 2 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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од. на суму грн.
| EM5K5T2R |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 0.3A EMT5
Description: MOSFET 2N-CH 30V 0.3A EMT5
на замовлення 12847 шт:
термін постачання 21-31 дні (днів)
| EM6M1T2R |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: EMT6
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V/20V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: EMT6
Part Status: Not For New Designs
на замовлення 7965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.84 грн |
| 10+ | 30.27 грн |
| 100+ | 21.05 грн |
| 500+ | 15.42 грн |
| 1000+ | 12.54 грн |
| 2000+ | 11.21 грн |
| QS6K21TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 1A
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Description: MOSFET 2N-CH 45V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 1A
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
на замовлення 2822 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.84 грн |
| 10+ | 39.32 грн |
| 100+ | 25.64 грн |
| 500+ | 18.54 грн |
| 1000+ | 16.75 грн |
| RRL025P03TR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Description: MOSFET P-CH 30V 2.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
на замовлення 5480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.52 грн |
| 10+ | 48.83 грн |
| 100+ | 31.93 грн |
| 500+ | 23.17 грн |
| 1000+ | 20.98 грн |
| RRQ045P03TR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Description: MOSFET P-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
на замовлення 5444 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 104.25 грн |
| 10+ | 63.63 грн |
| 100+ | 42.18 грн |
| 500+ | 30.95 грн |
| 1000+ | 28.16 грн |
| RRR030P03TL |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Description: MOSFET P-CH 30V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
на замовлення 5544 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.14 грн |
| 10+ | 36.68 грн |
| 100+ | 23.79 грн |
| 500+ | 17.10 грн |
| 1000+ | 15.42 грн |
| RSQ020N03TR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
на замовлення 1408 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.54 грн |
| 10+ | 42.42 грн |
| 100+ | 27.75 грн |
| 500+ | 20.11 грн |
| 1000+ | 18.19 грн |
| RSR030N06TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
на замовлення 1981 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.60 грн |
| 11+ | 29.13 грн |
| 100+ | 18.72 грн |
| 500+ | 13.37 грн |
| 1000+ | 12.01 грн |
| RTR011P02TL |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.1A TSMT3
Description: MOSFET P-CH 20V 1.1A TSMT3
на замовлення 2672 шт:
термін постачання 21-31 дні (днів)
| RTR025N05TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| RTR030N05TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
на замовлення 39635 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.11 грн |
| 10+ | 35.17 грн |
| 100+ | 24.44 грн |
| 500+ | 17.91 грн |
| RUE002N02TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 200MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Description: MOSFET N-CH 20V 200MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
на замовлення 23161 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.43 грн |
| 19+ | 16.15 грн |
| 100+ | 10.18 грн |
| 500+ | 7.10 грн |
| 1000+ | 6.31 грн |
| RUF025N02TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
на замовлення 12930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.84 грн |
| 10+ | 39.70 грн |
| 100+ | 25.89 грн |
| 500+ | 18.72 грн |
| 1000+ | 16.92 грн |
| RUL035N02TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 3.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Description: MOSFET N-CH 20V 3.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
на замовлення 643 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 41.36 грн |
| 100+ | 27.00 грн |
| 500+ | 19.56 грн |
| RUQ050N02TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 2786 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.95 грн |
| 10+ | 48.23 грн |
| 100+ | 31.76 грн |
| 500+ | 23.14 грн |
| 1000+ | 21.00 грн |
| RUR040N02TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
на замовлення 14318 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.03 грн |
| 10+ | 45.66 грн |
| 100+ | 29.85 грн |
| 500+ | 21.64 грн |
| 1000+ | 19.59 грн |
| RVQ040N05TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 4A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): 21V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 45V 4A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): 21V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 4328 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.38 грн |
| 10+ | 47.55 грн |
| 100+ | 31.21 грн |
| 500+ | 22.72 грн |
| 1000+ | 20.60 грн |
| RZL025P01TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 2.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 12V 2.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.35 грн |
| 12+ | 26.42 грн |
| 100+ | 18.33 грн |
| 500+ | 13.43 грн |
| 1000+ | 11.65 грн |
| RZL035P01TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 3.5A TUMT6
Description: MOSFET P-CH 12V 3.5A TUMT6
на замовлення 8556 шт:
термін постачання 21-31 дні (днів)
| RZQ050P01TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 5A TSMT6
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 12V 5A TSMT6
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.14 грн |
| 10+ | 50.72 грн |
| RZR025P01TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 2.5A TSMT3
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 12V 2.5A TSMT3
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 8935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.54 грн |
| 10+ | 34.12 грн |
| 100+ | 23.71 грн |
| 500+ | 17.37 грн |
| 1000+ | 14.12 грн |
| RZR040P01TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A TSMT3
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Description: MOSFET P-CH 12V 4A TSMT3
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.81 грн |
| 10+ | 46.27 грн |
| 100+ | 30.36 грн |
| 500+ | 22.07 грн |
| 1000+ | 20.00 грн |
| US6K4TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 1.5A TUMT6
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Description: MOSFET 2N-CH 20V 1.5A TUMT6
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
на замовлення 9287 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.11 грн |
| 10+ | 43.32 грн |
| 100+ | 28.23 грн |
| 500+ | 20.41 грн |
| 1000+ | 18.45 грн |
























