Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102999) > Сторінка 418 з 1717
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PSL0101WBFD1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2020 (5050 Metric) Color: White, Warm Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 3.3V Current - Test: 350mA Current - Max: 500mA Lumens/Watt @ Current - Test: 78 lm/W Height - Seated (Max): 0.039" (1.00mm) CCT (K): 3000K CRI (Color Rendering Index): 73 Flux @ 25°C, Current - Test: 90lm (Typ) Part Status: Obsolete |
на замовлення 778 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
PSL0102WBEB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2020 (5050 Metric) Color: White, Cool Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 3.3V Current - Test: 120mA Current - Max: 200mA Lumens/Watt @ Current - Test: 95 lm/W Height - Seated (Max): 0.039" (1.00mm) CCT (K): 5000K CRI (Color Rendering Index): 80 Flux @ 25°C, Current - Test: 38lm (Typ) |
на замовлення 697 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
PSL0102WBEC1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2020 (5050 Metric) Color: White, Cool Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Mounting Type: Surface Mount Voltage - Forward (Vf) (Typ): 3.3V Current - Test: 120mA Current - Max: 200mA Lumens/Watt @ Current - Test: 75 lm/W Height - Seated (Max): 0.039" (1.00mm) CCT (K): 5000K CRI (Color Rendering Index): 90 Flux @ 25°C, Current - Test: 30lm (Typ) |
на замовлення 675 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
PSL0102WBFA1 | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
PSL0102WBFB1 | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
PSL0102WBFC1 | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
SMLE13WBC8W1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Color: White Size / Dimension: 1.60mm L x 0.80mm W Mounting Type: Surface Mount Millicandela Rating: 140mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.9V Current - Test: 5mA Height (Max): 0.46mm Supplier Device Package: 0603 (1608 Metric) Part Status: Obsolete Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 0.80mm |
на замовлення 1322 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
![]() |
SML813WBC8W1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 1305 (3412 Metric) Color: White, Cool Size / Dimension: 3.40mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 45mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.9V Lens Color: White Current - Test: 5mA Height (Max): 1.15mm Supplier Device Package: 3412(1305) Lens Transparency: Diffused Part Status: Obsolete Lens Style: Rectangle with Flat Top Lens Size: 1.20mm x 1.25mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
SMLP13WBC8W1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Color: White Size / Dimension: 1.00mm L x 0.60mm W Mounting Type: Surface Mount Millicandela Rating: 180mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.9V Current - Test: 5mA Height (Max): 0.25mm Supplier Device Package: 1006 (0402) Part Status: Obsolete Lens Style: Square with Flat Top Lens Size: 0.60mm |
на замовлення 77875 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
|
SMLK34WBEDW1 | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
SMLK18WBJAW1 | Rohm Semiconductor |
![]() |
на замовлення 1376 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
![]() |
SMLK18WBJCW1 | Rohm Semiconductor |
![]() |
на замовлення 4278 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
![]() |
SMLW36WBFDW1 | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
PSL0101WBEA1 | Rohm Semiconductor |
![]() |
на замовлення 952 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
|
PSL0101WBEB1 | Rohm Semiconductor |
![]() |
на замовлення 1421 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
|
PSL0101WBED1 | Rohm Semiconductor |
![]() |
на замовлення 994 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
|
PSL0101WBFC1 | Rohm Semiconductor |
![]() |
на замовлення 1748 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
|
BZ6A1206GM_EVK | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
BD88415GUL-E2 | Rohm Semiconductor |
![]() |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
![]() |
BD88415GUL-E2 | Rohm Semiconductor |
![]() |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
![]() |
BD88415GUL-E2 | Rohm Semiconductor |
![]() |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
![]() |
RMW130N03TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Part Status: Obsolete |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
![]() |
RMW200N03TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-PSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
RMW280N03TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 28A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-PSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
RMW130N03TB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Part Status: Obsolete |
на замовлення 2313 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
![]() |
RMW150N03TB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Part Status: Obsolete |
на замовлення 1738 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
![]() |
RMW180N03TB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Part Status: Obsolete |
на замовлення 2415 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
![]() |
RMW200N03TB | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-PSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
![]() |
R5009FNX | Rohm Semiconductor |
![]() |
на замовлення 130 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
![]() |
R5011FNX | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V |
на замовлення 418 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
![]() |
R5016FNX | Rohm Semiconductor |
![]() |
на замовлення 568 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
![]() |
R6008FNX | Rohm Semiconductor |
![]() |
на замовлення 777 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
![]() |
R6012FNX | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
R6015FNX | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V |
на замовлення 648 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
![]() |
R6020FNX | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
R6004CNDTL | Rohm Semiconductor |
![]() |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
![]() |
R6008FNJTL | Rohm Semiconductor |
![]() |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
![]() |
RFN10B3STL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: CPD Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 350 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
MP6K11TCR | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
MP6K12TCR | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
MP6K14TCR | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
MP6K31TCR | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
MP6M11TCR | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
MP6M12TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
MP6M14TCR | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
QS8K51TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Supplier Device Package: TSMT8 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
QS8M11TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 3.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Supplier Device Package: TSMT8 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
QS8M12TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
QS8M13TCR | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
QS8M51TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
![]() |
RCJ300N20TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
RCJ330N25TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
RCJ450N20TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
RCJ510N25TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
![]() |
RCJ700N20TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
RF201L4STE25 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
RFN1L6STE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 800MA PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
RFN1L7STE25 | Rohm Semiconductor |
Description: DIODE GEN PURP 700V 800MA PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA Current - Reverse Leakage @ Vr: 1 µA @ 700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
RFUH10NS6STL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
![]() |
RFUH20NS6STL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. |
PSL0101WBFD1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED PSL0101 WARM WHT 3000K 2SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Warm
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 3.3V
Current - Test: 350mA
Current - Max: 500mA
Lumens/Watt @ Current - Test: 78 lm/W
Height - Seated (Max): 0.039" (1.00mm)
CCT (K): 3000K
CRI (Color Rendering Index): 73
Flux @ 25°C, Current - Test: 90lm (Typ)
Part Status: Obsolete
Description: LED PSL0101 WARM WHT 3000K 2SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Warm
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 3.3V
Current - Test: 350mA
Current - Max: 500mA
Lumens/Watt @ Current - Test: 78 lm/W
Height - Seated (Max): 0.039" (1.00mm)
CCT (K): 3000K
CRI (Color Rendering Index): 73
Flux @ 25°C, Current - Test: 90lm (Typ)
Part Status: Obsolete
на замовлення 778 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 343.77 грн |
10+ | 227.12 грн |
100+ | 173.55 грн |
500+ | 143.03 грн |
PSL0102WBEB1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED PSL0102 COOL WHT 5000K 2SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 3.3V
Current - Test: 120mA
Current - Max: 200mA
Lumens/Watt @ Current - Test: 95 lm/W
Height - Seated (Max): 0.039" (1.00mm)
CCT (K): 5000K
CRI (Color Rendering Index): 80
Flux @ 25°C, Current - Test: 38lm (Typ)
Description: LED PSL0102 COOL WHT 5000K 2SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 3.3V
Current - Test: 120mA
Current - Max: 200mA
Lumens/Watt @ Current - Test: 95 lm/W
Height - Seated (Max): 0.039" (1.00mm)
CCT (K): 5000K
CRI (Color Rendering Index): 80
Flux @ 25°C, Current - Test: 38lm (Typ)
на замовлення 697 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 324.31 грн |
10+ | 220.64 грн |
100+ | 180.74 грн |
500+ | 142.99 грн |
PSL0102WBEC1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED PSL0102 COOL WHT 5000K 2SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 3.3V
Current - Test: 120mA
Current - Max: 200mA
Lumens/Watt @ Current - Test: 75 lm/W
Height - Seated (Max): 0.039" (1.00mm)
CCT (K): 5000K
CRI (Color Rendering Index): 90
Flux @ 25°C, Current - Test: 30lm (Typ)
Description: LED PSL0102 COOL WHT 5000K 2SMD
Packaging: Cut Tape (CT)
Package / Case: 2020 (5050 Metric)
Color: White, Cool
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 3.3V
Current - Test: 120mA
Current - Max: 200mA
Lumens/Watt @ Current - Test: 75 lm/W
Height - Seated (Max): 0.039" (1.00mm)
CCT (K): 5000K
CRI (Color Rendering Index): 90
Flux @ 25°C, Current - Test: 30lm (Typ)
на замовлення 675 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 317.82 грн |
10+ | 216.19 грн |
100+ | 177.07 грн |
500+ | 140.09 грн |
PSL0102WBFA1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED PSL0102 WARM WHT 3000K 2SMD
Description: LED PSL0102 WARM WHT 3000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
PSL0102WBFB1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED PSL0102 WARM WHT 3000K 2SMD
Description: LED PSL0102 WARM WHT 3000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
PSL0102WBFC1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED PSL0102 WARM WHT 3000K 2SMD
Description: LED PSL0102 WARM WHT 3000K 2SMD
товару немає в наявності
В кошику
од. на суму грн.
SMLE13WBC8W1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED WHITE 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: White
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 140mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Current - Test: 5mA
Height (Max): 0.46mm
Supplier Device Package: 0603 (1608 Metric)
Part Status: Obsolete
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
Description: LED WHITE 0603 SMD
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Color: White
Size / Dimension: 1.60mm L x 0.80mm W
Mounting Type: Surface Mount
Millicandela Rating: 140mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Current - Test: 5mA
Height (Max): 0.46mm
Supplier Device Package: 0603 (1608 Metric)
Part Status: Obsolete
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 0.80mm
на замовлення 1322 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 51.08 грн |
10+ | 31.78 грн |
100+ | 20.81 грн |
1000+ | 15.42 грн |
SML813WBC8W1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED COOL WHITE DIFFUSED 3412 SMD
Packaging: Cut Tape (CT)
Package / Case: 1305 (3412 Metric)
Color: White, Cool
Size / Dimension: 3.40mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 45mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: White
Current - Test: 5mA
Height (Max): 1.15mm
Supplier Device Package: 3412(1305)
Lens Transparency: Diffused
Part Status: Obsolete
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 1.25mm
Description: LED COOL WHITE DIFFUSED 3412 SMD
Packaging: Cut Tape (CT)
Package / Case: 1305 (3412 Metric)
Color: White, Cool
Size / Dimension: 3.40mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 45mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: White
Current - Test: 5mA
Height (Max): 1.15mm
Supplier Device Package: 3412(1305)
Lens Transparency: Diffused
Part Status: Obsolete
Lens Style: Rectangle with Flat Top
Lens Size: 1.20mm x 1.25mm
товару немає в наявності
В кошику
од. на суму грн.
SMLP13WBC8W1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED WHITE 1006 SMD
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Color: White
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Current - Test: 5mA
Height (Max): 0.25mm
Supplier Device Package: 1006 (0402)
Part Status: Obsolete
Lens Style: Square with Flat Top
Lens Size: 0.60mm
Description: LED WHITE 1006 SMD
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Color: White
Size / Dimension: 1.00mm L x 0.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 180mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Current - Test: 5mA
Height (Max): 0.25mm
Supplier Device Package: 1006 (0402)
Part Status: Obsolete
Lens Style: Square with Flat Top
Lens Size: 0.60mm
на замовлення 77875 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.11 грн |
13+ | 24.05 грн |
100+ | 15.90 грн |
1000+ | 11.53 грн |
2000+ | 10.41 грн |
SMLK34WBEDW1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED COOL WHITE DIFFUSED 1808 SMD
Description: LED COOL WHITE DIFFUSED 1808 SMD
товару немає в наявності
В кошику
од. на суму грн.
SMLK18WBJAW1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED SML COOL WHITE 5000K 4SMD
Description: LED SML COOL WHITE 5000K 4SMD
на замовлення 1376 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SMLK18WBJCW1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED SML COOL WHITE 8000K 4SMD
Description: LED SML COOL WHITE 8000K 4SMD
на замовлення 4278 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SMLW36WBFDW1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED SMLV36 COOL WHT 5000K 6SOIC
Description: LED SMLV36 COOL WHT 5000K 6SOIC
товару немає в наявності
В кошику
од. на суму грн.
PSL0101WBEA1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED PSL0101 COOL WHT 5000K 2SMD
Description: LED PSL0101 COOL WHT 5000K 2SMD
на замовлення 952 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
PSL0101WBEB1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED PSL0101 COOL WHT 5000K 2SMD
Description: LED PSL0101 COOL WHT 5000K 2SMD
на замовлення 1421 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
PSL0101WBED1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED PSL0101 COOL WHT 5000K 2SMD
Description: LED PSL0101 COOL WHT 5000K 2SMD
на замовлення 994 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
PSL0101WBFC1 |
![]() |
Виробник: Rohm Semiconductor
Description: LED PSL0101 WARM WHT 3000K 2SMD
Description: LED PSL0101 WARM WHT 3000K 2SMD
на замовлення 1748 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BZ6A1206GM_EVK |
![]() |
Виробник: Rohm Semiconductor
Description: BOARD EVAL BUCK 1.2V BZ6A1206
Description: BOARD EVAL BUCK 1.2V BZ6A1206
товару немає в наявності
В кошику
од. на суму грн.
BD88415GUL-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC HEADPHONE AMP 2-CH 14CSP
Description: IC HEADPHONE AMP 2-CH 14CSP
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BD88415GUL-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC HEADPHONE AMP 2-CH 14CSP
Description: IC HEADPHONE AMP 2-CH 14CSP
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BD88415GUL-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC HEADPHONE AMP 2-CH 14CSP
Description: IC HEADPHONE AMP 2-CH 14CSP
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RMW130N03TB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8PSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: MOSFET N-CH 30V 13A 8PSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 26.09 грн |
RMW200N03TB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 20A 8PSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-PSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
Description: MOSFET N-CH 30V 20A 8PSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-PSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
RMW280N03TB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 28A 8PSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-PSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 15 V
Description: MOSFET N-CH 30V 28A 8PSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-PSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
RMW130N03TB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 13A 8PSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: MOSFET N-CH 30V 13A 8PSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
на замовлення 2313 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 84.32 грн |
10+ | 54.50 грн |
100+ | 37.82 грн |
500+ | 28.43 грн |
1000+ | 26.11 грн |
RMW150N03TB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 15A 8PSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: MOSFET N-CH 30V 15A 8PSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
на замовлення 1738 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 80.27 грн |
10+ | 51.76 грн |
100+ | 35.89 грн |
500+ | 26.97 грн |
1000+ | 24.77 грн |
RMW180N03TB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 18A 8PSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
Description: MOSFET N-CH 30V 18A 8PSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
на замовлення 2415 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 94.86 грн |
10+ | 61.68 грн |
100+ | 43.00 грн |
500+ | 32.51 грн |
1000+ | 29.94 грн |
RMW200N03TB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 20A 8PSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-PSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
Description: MOSFET N-CH 30V 20A 8PSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-PSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
R5009FNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 500V 9A TO220FM
Description: MOSFET N-CH 500V 9A TO220FM
на замовлення 130 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 297.55 грн |
10+ | 257.65 грн |
100+ | 211.07 грн |
R5011FNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 500V 11A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Description: MOSFET N-CH 500V 11A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
на замовлення 418 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 304.04 грн |
10+ | 245.31 грн |
100+ | 198.49 грн |
R5016FNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 500V 16A TO-220FM
Description: MOSFET N-CH 500V 16A TO-220FM
на замовлення 568 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
R6008FNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A TO-220FM
Description: MOSFET N-CH 600V 8A TO-220FM
на замовлення 777 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
R6012FNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A TO220FM
Description: MOSFET N-CH 600V 12A TO220FM
товару немає в наявності
В кошику
од. на суму грн.
R6015FNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Description: MOSFET N-CH 600V 15A TO-220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
на замовлення 648 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 431.33 грн |
10+ | 348.53 грн |
100+ | 281.92 грн |
500+ | 235.18 грн |
R6020FNX |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
R6004CNDTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A CPT
Description: MOSFET N-CH 600V 4A CPT
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
R6008FNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 8A LPTS
Description: MOSFET N-CH 600V 8A LPTS
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RFN10B3STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 350V 10A CPD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: CPD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Description: DIODE STANDARD 350V 10A CPD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: CPD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
товару немає в наявності
В кошику
од. на суму грн.
MP6K11TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A MPT6
Description: MOSFET 2N-CH 30V 3.5A MPT6
товару немає в наявності
В кошику
од. на суму грн.
MP6K12TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A MPT6
Description: MOSFET 2N-CH 30V 5A MPT6
товару немає в наявності
В кошику
од. на суму грн.
MP6K14TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A MPT6
Description: MOSFET 2N-CH 30V 8A MPT6
товару немає в наявності
В кошику
од. на суму грн.
MP6K31TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 2A MPT6
Description: MOSFET 2N-CH 60V 2A MPT6
товару немає в наявності
В кошику
од. на суму грн.
MP6M11TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A MPT6
Description: MOSFET N/P-CH 30V 3.5A MPT6
товару немає в наявності
В кошику
од. на суму грн.
MP6M12TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Description: MOSFET N/P-CH 30V 5A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
товару немає в наявності
В кошику
од. на суму грн.
MP6M14TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 8A/6A MPT6
Description: MOSFET N/P-CH 30V 8A/6A MPT6
товару немає в наявності
В кошику
од. на суму грн.
QS8K51TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 2A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Description: MOSFET 2N-CH 30V 2A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
QS8M11TCR |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V 3.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Supplier Device Package: TSMT8
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
QS8M12TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V 4A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
QS8M13TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A/5A TSMT8
Description: MOSFET N/P-CH 30V 6A/5A TSMT8
товару немає в наявності
В кошику
од. на суму грн.
QS8M51TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET N/P-CH 100V 2A/1.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 36.89 грн |
RCJ300N20TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 200V 30A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 200V 30A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
RCJ330N25TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 33A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 250V 33A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
RCJ450N20TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 200V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 200V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 22.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
RCJ510N25TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 51A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Description: MOSFET N-CH 250V 51A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 161.11 грн |
RCJ700N20TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 200V 70A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
Description: MOSFET N-CH 200V 70A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 35A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
RF201L4STE25 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1.5A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1.5A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
RFN1L6STE25 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 800MA PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 800MA PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
RFN1L7STE25 |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
Description: DIODE GEN PURP 700V 800MA PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 800 mA
Current - Reverse Leakage @ Vr: 1 µA @ 700 V
товару немає в наявності
В кошику
од. на суму грн.
RFUH10NS6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
RFUH20NS6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.