Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102055) > Сторінка 825 з 1701
| Фото | Назва | Виробник | Інформація |
Доступність |
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BU91796FS-ME2 | Rohm Semiconductor |
Description: LOW DUTY LCD SEGMENT DRIVERS FORPackaging: Cut Tape (CT) Package / Case: 32-SOP (0.213", 5.40mm Width) Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 80 Segment Operating Temperature: -40°C ~ 105°C Voltage - Supply: 2.5V ~ 6V Supplier Device Package: 32-SSOP-A Part Status: Active Current - Supply: 12.5 µA |
на замовлення 13945 шт: термін постачання 21-31 дні (днів) |
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BD49K34G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD49K34G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 842 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RSB33F2T106 | Rohm Semiconductor |
Description: TVS DIODE 25VWM UMD3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz (Max) Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: UMD3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RSB33F2T106 | Rohm Semiconductor |
Description: TVS DIODE 25VWM UMD3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz (Max) Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: UMD3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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R8005ANJFRGTL | Rohm Semiconductor |
Description: MOSFET N-CH 800V 5A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R8005ANJFRGTL | Rohm Semiconductor |
Description: MOSFET N-CH 800V 5A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1848 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPJ362 | Rohm Semiconductor |
Description: RES SMD 3.6 KOHM 5% 0.3W 0603Packaging: Tape & Reel (TR) Power (Watts): 0.3W Tolerance: ±5% Features: Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 3.6 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SDR03EZPJ362 | Rohm Semiconductor |
Description: RES SMD 3.6 KOHM 5% 0.3W 0603Packaging: Cut Tape (CT) Power (Watts): 0.3W Tolerance: ±5% Features: Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 3.6 kOhms |
на замовлення 3462 шт: термін постачання 21-31 дні (днів) |
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DTC143ECAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTC143ECAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
на замовлення 1904 шт: термін постачання 21-31 дні (днів) |
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RF301BGE2STL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A TO252GE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RF301BGE2STL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A TO252GE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RF305BM6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RF305BM6STL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 260 шт: термін постачання 21-31 дні (днів) |
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RF305BM6SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RF305BM6SFHTL | Rohm Semiconductor |
Description: DIODE GEN PURP 600V 3A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2410 шт: термін постачання 21-31 дні (днів) |
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RGW60TK65DGVC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 33A TO-3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/114ns Switching Energy: 480µJ (on), 490µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 84 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 72 W |
на замовлення 410 шт: термін постачання 21-31 дні (днів) |
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RGTV60TK65DGVC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 33A TO3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/105ns Switching Energy: 570µJ (on), 500µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 76 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGTV00TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 45A TO-3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 102 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 41ns/142ns Switching Energy: 1.17mJ (on), 940µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 104 nC Part Status: Active Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 94 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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RGTH00TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 35A TO-3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 225 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/143ns Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 94 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 72 W |
на замовлення 448 шт: термін постачання 21-31 дні (днів) |
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RGW60TK65GVC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 33A TO3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/114ns Switching Energy: 480µJ (on), 490µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 84 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 72 W |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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RGTV60TK65GVC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 33A TO3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/105ns Switching Energy: 570µJ (on), 500µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 76 W |
на замовлення 436 шт: термін постачання 21-31 дні (днів) |
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RGTH40TK65GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 23A TO-3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 56 W |
на замовлення 319 шт: термін постачання 21-31 дні (днів) |
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RGTH50TK65GC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 26A TO-3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/94ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 26 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 59 W |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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RGTH40TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 23A TO3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 56 W |
на замовлення 440 шт: термін постачання 21-31 дні (днів) |
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RGTH50TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 26A TO3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/94ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 26 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 59 W |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
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RGTH80TK65GC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 31A TO3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/120ns Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 79 nC Part Status: Active Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 66 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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RB168VAM100TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 100V 1A TUMD2MPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Current - Reverse Leakage @ Vr: 300 nA @ 100 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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ESR18EZPJ204 | Rohm Semiconductor |
Description: RES 200K OHM 5% 1/2W 1206Packaging: Cut Tape (CT) Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 200 kOhms |
на замовлення 14799 шт: термін постачання 21-31 дні (днів) |
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DTA143ZU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTA143ZU3T106 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 0.1A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 7231 шт: термін постачання 21-31 дні (днів) |
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DTA143EEBHZGTL | Rohm Semiconductor |
Description: PNP DIGITAL TRANSISTOR (WITH BUI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA143EEBHZGTL | Rohm Semiconductor |
Description: PNP DIGITAL TRANSISTOR (WITH BUI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BA178M18FP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 18V 500MA TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 33V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 18V PSRR: 58dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Current - Supply (Max): 6 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BA178M18FP-E2 | Rohm Semiconductor |
Description: IC REG LINEAR 18V 500MA TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 4.5 mA Voltage - Input (Max): 33V Number of Regulators: 1 Supplier Device Package: TO-252 Voltage - Output (Min/Fixed): 18V PSRR: 58dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Current - Supply (Max): 6 mA |
на замовлення 689 шт: термін постачання 21-31 дні (днів) |
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DTA143EEFRATL | Rohm Semiconductor | Description: PNP DIGITAL TRANSISTOR (AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTA143EEFRATL | Rohm Semiconductor | Description: PNP DIGITAL TRANSISTOR (AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BU52098GWZ-E2 | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLARPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: CMOS Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±27.5mT Trip, ±18.9mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Test Condition: 25°C |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BU52098GWZ-E2 | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLARPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: CMOS Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±27.5mT Trip, ±18.9mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Test Condition: 25°C |
на замовлення 6005 шт: термін постачання 21-31 дні (днів) |
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BU52274NUZ-ZE2 | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLARPackaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: CMOS Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±7.4mT Trip, ±4.3mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Test Condition: 25°C |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BU52274NUZ-ZE2 | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLARPackaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: CMOS Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±7.4mT Trip, ±4.3mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Test Condition: 25°C |
на замовлення 12143 шт: термін постачання 21-31 дні (днів) |
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ML620Q504H-NNNTBWBX | Rohm Semiconductor |
Description: IC MCU 16BIT 64KB FLASH 48TQFPPackaging: Tape & Reel (TR) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 16.8MHz Program Memory Size: 64KB (32K x 16) RAM Size: 3K x 16 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 16 Core Processor: nX-U16/100 Data Converters: A/D 12x12b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: Melody Driver, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ML620Q504H-NNNTBWBX | Rohm Semiconductor |
Description: IC MCU 16BIT 64KB FLASH 48TQFPPackaging: Cut Tape (CT) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 16.8MHz Program Memory Size: 64KB (32K x 16) RAM Size: 3K x 16 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 16 Core Processor: nX-U16/100 Data Converters: A/D 12x12b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: Melody Driver, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6012JNJGTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 12A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 7V @ 2.5mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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R6012JNJGTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 12A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 7V @ 2.5mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
на замовлення 1296 шт: термін постачання 21-31 дні (днів) |
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BA6209 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 6V-18V 10HSIPPackaging: Tube Package / Case: 10-SIP Exposed Tab Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.6A Interface: Parallel Operating Temperature: -20°C ~ 75°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 6V ~ 18V Applications: Media Player Technology: CMOS Voltage - Load: 6.6V ~ 7.2V Supplier Device Package: 10-HSIP Motor Type - AC, DC: Brushed DC Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SCR502U3HZGT106 | Rohm Semiconductor |
Description: TRANS NPN 30V 0.5A UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 360MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SCR502U3HZGT106 | Rohm Semiconductor |
Description: TRANS NPN 30V 0.5A UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 360MHz Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 636 шт: термін постачання 21-31 дні (днів) |
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2SCR574D3FRATL | Rohm Semiconductor |
Description: TRANS NPN 80V 2A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 280MHz Supplier Device Package: TO-252 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 10 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SCR574D3FRATL | Rohm Semiconductor |
Description: TRANS NPN 80V 2A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 280MHz Supplier Device Package: TO-252 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 10 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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2SCR574D3TL1 | Rohm Semiconductor |
Description: TRANS NPN 80V 2A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 280MHz Supplier Device Package: TO-252 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 10 W |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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2SCR574D3TL1 | Rohm Semiconductor |
Description: TRANS NPN 80V 2A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 280MHz Supplier Device Package: TO-252 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 10 W |
на замовлення 5614 шт: термін постачання 21-31 дні (днів) |
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2SCR574DGTL | Rohm Semiconductor |
Description: TRANS NPN 80V 2A CPT3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 280MHz Supplier Device Package: CPT3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 10 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD48L25G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOPPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 2.5V Supplier Device Package: 3-SSOP DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BD48L25G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Voltage - Threshold: 2.5V Supplier Device Package: 3-SSOP DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UDZVFHTE-175.1B | Rohm Semiconductor |
Description: DIODE ZENER 5.09V 200MW UMD2Packaging: Tape & Reel (TR) Tolerance: ±2.16% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.09 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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UDZVFHTE-175.1B | Rohm Semiconductor |
Description: DIODE ZENER 5.09V 200MW UMD2Packaging: Cut Tape (CT) Tolerance: ±2.16% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.09 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V |
на замовлення 18642 шт: термін постачання 21-31 дні (днів) |
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EDZVFHT2R5.1B | Rohm Semiconductor |
Description: DIODE ZENER 5.09V 150MW EMD2Packaging: Tape & Reel (TR) Tolerance: ±2.16% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.09 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EDZVFHT2R5.1B | Rohm Semiconductor |
Description: DIODE ZENER 5.09V 150MW EMD2Packaging: Cut Tape (CT) Tolerance: ±2.16% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.09 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6980 шт: термін постачання 21-31 дні (днів) |
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| BU91796FS-ME2 |
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Виробник: Rohm Semiconductor
Description: LOW DUTY LCD SEGMENT DRIVERS FOR
Packaging: Cut Tape (CT)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 32-SSOP-A
Part Status: Active
Current - Supply: 12.5 µA
Description: LOW DUTY LCD SEGMENT DRIVERS FOR
Packaging: Cut Tape (CT)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 32-SSOP-A
Part Status: Active
Current - Supply: 12.5 µA
на замовлення 13945 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.99 грн |
| 10+ | 134.49 грн |
| 25+ | 126.85 грн |
| 100+ | 101.43 грн |
| 250+ | 95.24 грн |
| 500+ | 83.34 грн |
| 1000+ | 67.92 грн |
| BD49K34G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
товару немає в наявності
В кошику
од. на суму грн.
| BD49K34G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 842 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RSB33F2T106 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Description: TVS DIODE 25VWM UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.00 грн |
| RSB33F2T106 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Description: TVS DIODE 25VWM UMD3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.77 грн |
| 12+ | 27.39 грн |
| 100+ | 18.67 грн |
| 500+ | 13.14 грн |
| 1000+ | 9.86 грн |
| R8005ANJFRGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 113.41 грн |
| R8005ANJFRGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1848 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 173.73 грн |
| 10+ | 141.21 грн |
| 100+ | 112.64 грн |
| SDR03EZPJ362 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 3.6 KOHM 5% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.6 kOhms
Description: RES SMD 3.6 KOHM 5% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.6 kOhms
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| SDR03EZPJ362 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 3.6 KOHM 5% 0.3W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.6 kOhms
Description: RES SMD 3.6 KOHM 5% 0.3W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.6 kOhms
на замовлення 3462 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 9.37 грн |
| 42+ | 7.87 грн |
| 108+ | 3.04 грн |
| 1000+ | 1.26 грн |
| 2500+ | 1.09 грн |
| DTC143ECAT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
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| DTC143ECAT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 1904 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.03 грн |
| 34+ | 9.84 грн |
| 100+ | 6.08 грн |
| 500+ | 4.18 грн |
| 1000+ | 3.68 грн |
| RF301BGE2STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252GE
Description: DIODE GEN PURP 200V 3A TO252GE
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| RF301BGE2STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252GE
Description: DIODE GEN PURP 200V 3A TO252GE
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| RF305BM6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| RF305BM6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.57 грн |
| 10+ | 76.02 грн |
| 100+ | 59.25 грн |
| RF305BM6SFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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од. на суму грн.
| RF305BM6SFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2410 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 81.75 грн |
| 10+ | 70.28 грн |
| 100+ | 54.79 грн |
| 500+ | 42.47 грн |
| 1000+ | 33.53 грн |
| RGW60TK65DGVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 33A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
Description: IGBT TRENCH FS 650V 33A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
на замовлення 410 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 408.77 грн |
| 10+ | 266.03 грн |
| RGTV60TK65DGVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
товару немає в наявності
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од. на суму грн.
| RGTV00TK65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 45A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/142ns
Switching Energy: 1.17mJ (on), 940µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 45A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/142ns
Switching Energy: 1.17mJ (on), 940µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 94 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 496.48 грн |
| 10+ | 326.63 грн |
| 450+ | 301.11 грн |
| RGTH00TK65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 35A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 225 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 72 W
Description: IGBT TRENCH FS 650V 35A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 225 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 72 W
на замовлення 448 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 344.05 грн |
| 30+ | 182.93 грн |
| 120+ | 150.20 грн |
| RGW60TK65GVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
на замовлення 102 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 440.28 грн |
| 30+ | 336.03 грн |
| RGTV60TK65GVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
на замовлення 436 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 309.98 грн |
| 30+ | 236.67 грн |
| 120+ | 202.87 грн |
| RGTH40TK65GC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 23A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
Description: IGBT TRENCH FS 650V 23A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
на замовлення 319 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 257.18 грн |
| 30+ | 134.02 грн |
| 120+ | 108.85 грн |
| RGTH50TK65GC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 26A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
Description: IGBT TRENCH FS 650V 26A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
на замовлення 446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 269.11 грн |
| 30+ | 140.23 грн |
| 120+ | 114.08 грн |
| RGTH40TK65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 23A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
Description: IGBT TRNCH FIELD 650V 23A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
на замовлення 440 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 499.04 грн |
| 30+ | 274.58 грн |
| 120+ | 229.20 грн |
| RGTH50TK65DGC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 26A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
Description: IGBT TRNCH FIELD 650V 26A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
на замовлення 445 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 329.57 грн |
| 30+ | 251.40 грн |
| 120+ | 215.50 грн |
| RGTH80TK65GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 66 W
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 66 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 219.71 грн |
| 30+ | 169.86 грн |
| 120+ | 139.75 грн |
| RB168VAM100TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 1A TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Description: DIODE SCHOTTKY 100V 1A TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.58 грн |
| 6000+ | 5.71 грн |
| 9000+ | 5.42 грн |
| 15000+ | 5.02 грн |
| 21000+ | 5.00 грн |
| ESR18EZPJ204 |
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Виробник: Rohm Semiconductor
Description: RES 200K OHM 5% 1/2W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 200 kOhms
Description: RES 200K OHM 5% 1/2W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 200 kOhms
на замовлення 14799 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.63 грн |
| 51+ | 6.48 грн |
| 65+ | 5.08 грн |
| 77+ | 4.02 грн |
| 100+ | 3.37 грн |
| 250+ | 2.88 грн |
| 500+ | 2.51 грн |
| 1000+ | 2.25 грн |
| DTA143ZU3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.70 грн |
| DTA143ZU3T106 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 7231 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.63 грн |
| 41+ | 8.04 грн |
| 100+ | 4.94 грн |
| 500+ | 3.37 грн |
| 1000+ | 2.96 грн |
| DTA143EEBHZGTL |
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Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Description: PNP DIGITAL TRANSISTOR (WITH BUI
товару немає в наявності
В кошику
од. на суму грн.
| DTA143EEBHZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Description: PNP DIGITAL TRANSISTOR (WITH BUI
товару немає в наявності
В кошику
од. на суму грн.
| BA178M18FP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 18V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 18V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 18V 500MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 18V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
товару немає в наявності
В кошику
од. на суму грн.
| BA178M18FP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 18V 500MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 18V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
Description: IC REG LINEAR 18V 500MA TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 4.5 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252
Voltage - Output (Min/Fixed): 18V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Current - Supply (Max): 6 mA
на замовлення 689 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 65.57 грн |
| 10+ | 45.10 грн |
| 25+ | 40.61 грн |
| 100+ | 33.52 грн |
| 250+ | 31.33 грн |
| 500+ | 30.00 грн |
| DTA143EEFRATL |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DTA143EEFRATL |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BU52098GWZ-E2 |
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Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±27.5mT Trip, ±18.9mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±27.5mT Trip, ±18.9mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.65 грн |
| 6000+ | 20.09 грн |
| BU52098GWZ-E2 |
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Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±27.5mT Trip, ±18.9mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±27.5mT Trip, ±18.9mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
на замовлення 6005 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.32 грн |
| 11+ | 30.51 грн |
| 25+ | 26.72 грн |
| 50+ | 25.38 грн |
| 100+ | 24.17 грн |
| 500+ | 21.39 грн |
| 1000+ | 20.50 грн |
| BU52274NUZ-ZE2 |
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Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 16.04 грн |
| 10000+ | 14.89 грн |
| BU52274NUZ-ZE2 |
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Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
на замовлення 12143 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.13 грн |
| 9+ | 37.89 грн |
| 10+ | 35.84 грн |
| 25+ | 31.40 грн |
| 50+ | 29.86 грн |
| 100+ | 28.47 грн |
| 500+ | 25.24 грн |
| 1000+ | 24.22 грн |
| ML620Q504H-NNNTBWBX |
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Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
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| ML620Q504H-NNNTBWBX |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
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| R6012JNJGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: MOSFET N-CH 600V 12A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 128.89 грн |
| R6012JNJGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: MOSFET N-CH 600V 12A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
на замовлення 1296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 252.92 грн |
| 10+ | 192.14 грн |
| 100+ | 150.54 грн |
| 500+ | 122.99 грн |
| BA6209 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 6V-18V 10HSIP
Packaging: Tube
Package / Case: 10-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: Parallel
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Applications: Media Player
Technology: CMOS
Voltage - Load: 6.6V ~ 7.2V
Supplier Device Package: 10-HSIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 6V-18V 10HSIP
Packaging: Tube
Package / Case: 10-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: Parallel
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Applications: Media Player
Technology: CMOS
Voltage - Load: 6.6V ~ 7.2V
Supplier Device Package: 10-HSIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
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| 2SCR502U3HZGT106 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
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| 2SCR502U3HZGT106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 636 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.25 грн |
| 16+ | 20.67 грн |
| 100+ | 12.38 грн |
| 500+ | 10.76 грн |
| 2SCR574D3FRATL |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 2A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 2A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Grade: Automotive
Qualification: AEC-Q101
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| 2SCR574D3FRATL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 2A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 2A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 390 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.21 грн |
| 10+ | 101.93 грн |
| 100+ | 69.30 грн |
| 2SCR574D3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 2A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Description: TRANS NPN 80V 2A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 29.84 грн |
| 5000+ | 26.60 грн |
| 2SCR574D3TL1 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 2A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Description: TRANS NPN 80V 2A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
на замовлення 5614 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.41 грн |
| 10+ | 68.39 грн |
| 100+ | 45.28 грн |
| 500+ | 33.19 грн |
| 1000+ | 30.20 грн |
| 2SCR574DGTL |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 80V 2A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: CPT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
Description: TRANS NPN 80V 2A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 280MHz
Supplier Device Package: CPT3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
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од. на суму грн.
| BD48L25G-TL |
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Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.5V
Supplier Device Package: 3-SSOP
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.5V
Supplier Device Package: 3-SSOP
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.64 грн |
| BD48L25G-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.5V
Supplier Device Package: 3-SSOP
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2.5V
Supplier Device Package: 3-SSOP
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 37.47 грн |
| 12+ | 29.19 грн |
| 25+ | 26.67 грн |
| 100+ | 18.64 грн |
| 250+ | 16.89 грн |
| 500+ | 13.98 грн |
| 1000+ | 10.31 грн |
| UDZVFHTE-175.1B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.09V 200MW UMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2.16%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Description: DIODE ZENER 5.09V 200MW UMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2.16%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.69 грн |
| 6000+ | 4.19 грн |
| 9000+ | 3.47 грн |
| UDZVFHTE-175.1B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.09V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±2.16%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Description: DIODE ZENER 5.09V 200MW UMD2
Packaging: Cut Tape (CT)
Tolerance: ±2.16%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
на замовлення 18642 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.25 грн |
| 18+ | 18.45 грн |
| 100+ | 8.99 грн |
| 500+ | 7.04 грн |
| 1000+ | 4.89 грн |
| EDZVFHT2R5.1B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.09V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2.16%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.09V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2.16%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| EDZVFHT2R5.1B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.09V 150MW EMD2
Packaging: Cut Tape (CT)
Tolerance: ±2.16%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.09V 150MW EMD2
Packaging: Cut Tape (CT)
Tolerance: ±2.16%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.09 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.63 грн |
| 40+ | 8.28 грн |
| 100+ | 3.90 грн |
| 500+ | 3.59 грн |
| 1000+ | 3.46 грн |
| 2000+ | 2.86 грн |

























