Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102271) > Сторінка 833 з 1705
Фото | Назва | Виробник | Інформація |
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SH8KA7GZETB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SH8KA7GZETB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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QH8KA2TCR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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QH8KA2TCR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
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SH8KA4TB1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK2463T100 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK2463T100 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
на замовлення 893 шт: термін постачання 21-31 дні (днів) |
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BU7233YF-CGE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Output Type: Open-Drain Mounting Type: Surface Mount Number of Elements: 2 Type: CMOS Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V Supplier Device Package: 8-SOP Propagation Delay (Max): 1.8µs (Typ) Current - Quiescent (Max): 25µA Voltage - Input Offset (Max): 14mV @ 3V Current - Input Bias (Max): 300pA @ 3V Current - Output (Typ): 7mA @ 3V CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BU7233YF-CGE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Output Type: Open-Drain Mounting Type: Surface Mount Number of Elements: 2 Type: CMOS Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V Supplier Device Package: 8-SOP Propagation Delay (Max): 1.8µs (Typ) Current - Quiescent (Max): 25µA Voltage - Input Offset (Max): 14mV @ 3V Current - Input Bias (Max): 300pA @ 3V Current - Output (Typ): 7mA @ 3V CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 5855 шт: термін постачання 21-31 дні (днів) |
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BAS21VMFHTE-17 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: UMD2 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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BAS21VMFHTE-17 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: UMD2 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
на замовлення 11383 шт: термін постачання 21-31 дні (днів) |
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VS18VUA1LAMTFTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Current - Peak Pulse (10/1000µs): 20.5A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: PMDTM Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS18VUA1LAMTFTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Current - Peak Pulse (10/1000µs): 20.5A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: PMDTM Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KDZVTFTR18B | Rohm Semiconductor |
![]() Tolerance: ±6.39% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 19.15 V Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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KDZVTFTR18B | Rohm Semiconductor |
![]() Tolerance: ±6.39% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 19.15 V Supplier Device Package: PMDU Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 19809 шт: термін постачання 21-31 дні (днів) |
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DTB143ECHZGT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SST3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTB143ECHZGT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SST3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTB143ECT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DTB143ECT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
на замовлення 6380 шт: термін постачання 21-31 дні (днів) |
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DTB143EKFRAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.5A SMT3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SMT3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTB143EKFRAT146 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.5A SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SMT3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
KX128-1091 | Rohm Semiconductor |
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA Packaging: Tape & Reel (TR) Package / Case: 12-VFLGA Output Type: I2C, SPI Mounting Type: Surface Mount Axis: X, Y, Z Acceleration Range: ±2g, 4g, 8g Supplier Device Package: 12-LGA (2x2) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BCX17HZGT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SST3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BCX17HZGT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SST3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW Qualification: AEC-Q101 |
на замовлення 3021 шт: термін постачання 21-31 дні (днів) |
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DTC123EEBTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC123EEBTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDZT40RB5.1 | Rohm Semiconductor |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Supplier Device Package: SMD0402 Power - Max: 100 mW Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDZT40RB5.1 | Rohm Semiconductor |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Supplier Device Package: SMD0402 Power - Max: 100 mW Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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FDZT40RB7.5 | Rohm Semiconductor |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Supplier Device Package: SMD0402 Power - Max: 100 mW Current - Reverse Leakage @ Vr: 500 nA @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDZT40RB6.2 | Rohm Semiconductor |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Supplier Device Package: SMD0402 Power - Max: 100 mW Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDZT40RB6.2 | Rohm Semiconductor |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 6.2 V Supplier Device Package: SMD0402 Power - Max: 100 mW Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDZT40RB5.6 | Rohm Semiconductor |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Supplier Device Package: SMD0402 Power - Max: 100 mW Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESR18EZPJ104 | Rohm Semiconductor |
![]() Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 100 kOhms |
на замовлення 5119 шт: термін постачання 21-31 дні (днів) |
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RRU1LAM4STFTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDT Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RRU1LAM4STFTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: PMDT Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 6002 шт: термін постачання 21-31 дні (днів) |
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RCX220N25 | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220FM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
на замовлення 528 шт: термін постачання 21-31 дні (днів) |
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IMZ4T108 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 250MHz, 200MHz Supplier Device Package: SMT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMZ4T108 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 32V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V Frequency - Transition: 250MHz, 200MHz Supplier Device Package: SMT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD9P233MUF-CE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Frequency - Switching: 200kHz ~ 2.4MHz Voltage - Input (Max): 36V Topology: Buck Supplier Device Package: VQFN32FAV050 Synchronous Rectifier: Yes Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 3.3V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD9P233MUF-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Frequency - Switching: 200kHz ~ 2.4MHz Voltage - Input (Max): 36V Topology: Buck Supplier Device Package: VQFN32FAV050 Synchronous Rectifier: Yes Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 3.3V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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RSR025P03HZGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RSR025P03HZGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 10519 шт: термін постачання 21-31 дні (днів) |
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RS3E095BNGZETB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS3E095BNGZETB | Rohm Semiconductor |
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на замовлення 4090 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
RB851YXNT2R | Rohm Semiconductor | Description: DIODE SCHOTTKY EMD4 SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RB851Y7HMT2R | Rohm Semiconductor | Description: DIODE SCHOTTKY EMD4 SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RB851YGT2R | Rohm Semiconductor | Description: DIODE SCHOTTKY EMD4 SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RB851YGT2RB | Rohm Semiconductor | Description: DIODE SCHOTTKY EMD4 SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BR25L160F-WE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BR25L160F-WE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 2K x 8 DigiKey Programmable: Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD9328EFJ_EVK | Rohm Semiconductor |
![]() Packaging: Bulk Voltage - Output: 3.3V Voltage - Input: 4.2V ~ 18V Current - Output: 2A Frequency - Switching: 380kHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: BD9328 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB168MM100TFTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 1 A Current - Reverse Leakage @ Vr: 400 nA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RB168MM100TFTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 1 A Current - Reverse Leakage @ Vr: 400 nA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10438 шт: термін постачання 21-31 дні (днів) |
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BA14741F-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 3mA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 60 nA Voltage - Input Offset: 1 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 20 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BA14741F-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 3mA Slew Rate: 1V/µs Gain Bandwidth Product: 2 MHz Current - Input Bias: 60 nA Voltage - Input Offset: 1 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 20 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 36 V |
на замовлення 1768 шт: термін постачання 21-31 дні (днів) |
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BS2114F-E2 | Rohm Semiconductor |
Description: IC GATE DRVR HI/LOW SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOP Rise / Fall Time (Typ): 30ns, 30ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.6V Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BS2132F-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 11.5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOP Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: High-Side Number of Drivers: 3 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.6V Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BS2132F-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 11.5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOP Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: High-Side Number of Drivers: 3 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.6V Part Status: Obsolete DigiKey Programmable: Not Verified |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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RPI-0125 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: Slotted Module Sensing Distance: 0.047" (1.2mm) Sensing Method: Through-Beam Mounting Type: Surface Mount Operating Temperature: -25°C ~ 85°C Output Configuration: Phototransistor Response Time: 10µs, 10µs Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 30 V Current - DC Forward (If) (Max): 50 mA |
на замовлення 2250 шт: термін постачання 21-31 дні (днів) |
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RPI-0125 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: Slotted Module Sensing Distance: 0.047" (1.2mm) Sensing Method: Through-Beam Mounting Type: Surface Mount Operating Temperature: -25°C ~ 85°C Output Configuration: Phototransistor Response Time: 10µs, 10µs Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 30 V Current - DC Forward (If) (Max): 50 mA |
на замовлення 3688 шт: термін постачання 21-31 дні (днів) |
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SH8KA7GZETB |
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Виробник: Rohm Semiconductor
Description: SH8KA7 IS LOW ON-RESISTANCE AND
Description: SH8KA7 IS LOW ON-RESISTANCE AND
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SH8KA7GZETB |
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Виробник: Rohm Semiconductor
Description: SH8KA7 IS LOW ON-RESISTANCE AND
Description: SH8KA7 IS LOW ON-RESISTANCE AND
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В кошику
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QH8KA2TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
QH8KA2TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2N-CH 30V 4.5A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 83.36 грн |
10+ | 50.46 грн |
100+ | 33.10 грн |
500+ | 24.07 грн |
1000+ | 21.82 грн |
SH8KA4TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET2 N-CH SOP8G
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET2 N-CH SOP8G
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
товару немає в наявності
В кошику
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2SK2463T100 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
2SK2463T100 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Description: MOSFET N-CH 60V 2A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
на замовлення 893 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 88.92 грн |
10+ | 53.44 грн |
100+ | 35.20 грн |
500+ | 25.66 грн |
BU7233YF-CGE2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 50.46 грн |
BU7233YF-CGE2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs (Typ)
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 14mV @ 3V
Current - Input Bias (Max): 300pA @ 3V
Current - Output (Typ): 7mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 5855 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 184.18 грн |
10+ | 110.93 грн |
25+ | 93.70 грн |
100+ | 69.69 грн |
250+ | 60.72 грн |
500+ | 55.20 грн |
1000+ | 49.75 грн |
BAS21VMFHTE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.88 грн |
6000+ | 2.54 грн |
9000+ | 2.42 грн |
BAS21VMFHTE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 200MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: UMD2
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
на замовлення 11383 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.29 грн |
34+ | 9.10 грн |
100+ | 6.50 грн |
500+ | 4.47 грн |
1000+ | 3.94 грн |
VS18VUA1LAMTFTR |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 18VWM 29.2VC PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 18VWM 29.2VC PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS18VUA1LAMTFTR |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 18VWM 29.2VC PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 18VWM 29.2VC PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 20.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: PMDTM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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KDZVTFTR18B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDU
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 19.15V 1W PMDU
Tolerance: ±6.39%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 9.40 грн |
6000+ | 8.68 грн |
9000+ | 7.81 грн |
KDZVTFTR18B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDU
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 19.15V 1W PMDU
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 19.15 V
Supplier Device Package: PMDU
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 19809 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 34.93 грн |
12+ | 26.07 грн |
100+ | 15.62 грн |
500+ | 13.57 грн |
1000+ | 9.23 грн |
DTB143ECHZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.39 грн |
DTB143ECHZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.67 грн |
32+ | 9.86 грн |
100+ | 6.10 грн |
500+ | 4.19 грн |
1000+ | 3.69 грн |
DTB143ECT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.28 грн |
6000+ | 3.70 грн |
DTB143ECT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS PNP 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
на замовлення 6380 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
16+ | 20.64 грн |
25+ | 12.23 грн |
100+ | 7.61 грн |
500+ | 5.25 грн |
1000+ | 4.65 грн |
DTB143EKFRAT146 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
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DTB143EKFRAT146 |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V 0.5A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
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KX128-1091 |
Виробник: Rohm Semiconductor
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g
Supplier Device Package: 12-LGA (2x2)
Description: ACCELEROMETER 2-8G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g
Supplier Device Package: 12-LGA (2x2)
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BCX17HZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 45V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.49 грн |
BCX17HZGT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 45V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SST3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 3021 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 26.20 грн |
20+ | 15.29 грн |
100+ | 9.59 грн |
500+ | 6.67 грн |
1000+ | 5.92 грн |
DTC123EEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
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DTC123EEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
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FDZT40RB5.1 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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FDZT40RB5.1 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Description: DIODE ZENER 5.1V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 24.61 грн |
19+ | 16.59 грн |
100+ | 8.36 грн |
FDZT40RB7.5 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.5V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Description: DIODE ZENER 7.5V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
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FDZT40RB6.2 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: DIODE ZENER 6.2V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
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FDZT40RB6.2 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: DIODE ZENER 6.2V 100MW SMD0402
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
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FDZT40RB5.6 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Description: DIODE ZENER 5.6V 100MW SMD0402
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: SMD0402
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
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ESR18EZPJ104 |
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Виробник: Rohm Semiconductor
Description: RES 100K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 kOhms
Description: RES 100K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 100 kOhms
на замовлення 5119 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.50 грн |
48+ | 6.42 грн |
72+ | 4.27 грн |
100+ | 3.44 грн |
500+ | 2.54 грн |
1000+ | 2.28 грн |
RRU1LAM4STFTR |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 13.98 грн |
6000+ | 12.78 грн |
RRU1LAM4STFTR |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A PMDT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDT
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 6002 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.08 грн |
10+ | 34.17 грн |
100+ | 23.73 грн |
500+ | 17.39 грн |
1000+ | 14.13 грн |
RCX220N25 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 22A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 250V 22A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
на замовлення 528 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 158.78 грн |
10+ | 126.98 грн |
500+ | 85.53 грн |
IMZ4T108 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 32V 500MA SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 250MHz, 200MHz
Supplier Device Package: SMT6
Description: TRANS NPN/PNP 32V 500MA SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 250MHz, 200MHz
Supplier Device Package: SMT6
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IMZ4T108 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 32V 500MA SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 250MHz, 200MHz
Supplier Device Package: SMT6
Description: TRANS NPN/PNP 32V 500MA SMT6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 32V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Frequency - Transition: 250MHz, 200MHz
Supplier Device Package: SMT6
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BD9P233MUF-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK 3.3V 2A 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.4MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: VQFN32FAV050
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK 3.3V 2A 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.4MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: VQFN32FAV050
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Qualification: AEC-Q100
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BD9P233MUF-CE2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK 3.3V 2A 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.4MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: VQFN32FAV050
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK 3.3V 2A 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 2.4MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: VQFN32FAV050
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 469.98 грн |
10+ | 298.76 грн |
25+ | 258.58 грн |
100+ | 200.00 грн |
250+ | 179.05 грн |
500+ | 166.17 грн |
1000+ | 161.47 грн |
RSR025P03HZGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 16.10 грн |
6000+ | 14.25 грн |
RSR025P03HZGTL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
на замовлення 10519 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 73.83 грн |
10+ | 44.57 грн |
100+ | 29.04 грн |
500+ | 20.99 грн |
1000+ | 18.97 грн |
RS3E095BNGZETB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
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RS3E095BNGZETB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
на замовлення 4090 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RB851YXNT2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY EMD4 SMD
Description: DIODE SCHOTTKY EMD4 SMD
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RB851Y7HMT2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY EMD4 SMD
Description: DIODE SCHOTTKY EMD4 SMD
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В кошику
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RB851YGT2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY EMD4 SMD
Description: DIODE SCHOTTKY EMD4 SMD
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од. на суму грн.
RB851YGT2RB |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY EMD4 SMD
Description: DIODE SCHOTTKY EMD4 SMD
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BR25L160F-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT SPI 5MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT SPI 5MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Verified
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BR25L160F-WE2 |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT SPI 5MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT SPI 5MHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Verified
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од. на суму грн.
BD9328EFJ_EVK |
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Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD9328
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.2V ~ 18V
Current - Output: 2A
Frequency - Switching: 380kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: BD9328
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: EVAL BOARD FOR BD9328
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 4.2V ~ 18V
Current - Output: 2A
Frequency - Switching: 380kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: BD9328
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
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од. на суму грн.
RB168MM100TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 9.27 грн |
6000+ | 8.56 грн |
RB168MM100TFTR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10438 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 34.14 грн |
12+ | 25.69 грн |
100+ | 15.40 грн |
500+ | 13.38 грн |
1000+ | 9.10 грн |
BA14741F-E2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
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од. на суму грн.
BA14741F-E2 |
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Виробник: Rohm Semiconductor
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 3mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 2 MHz
Current - Input Bias: 60 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
на замовлення 1768 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 184.98 грн |
10+ | 111.77 грн |
25+ | 94.40 грн |
100+ | 70.22 грн |
250+ | 61.19 грн |
500+ | 55.64 грн |
1000+ | 50.15 грн |
BS2114F-E2 |
Виробник: Rohm Semiconductor
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOP
Rise / Fall Time (Typ): 30ns, 30ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.6V
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOP
Rise / Fall Time (Typ): 30ns, 30ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.6V
Part Status: Obsolete
DigiKey Programmable: Not Verified
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BS2132F-E2 |
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Виробник: Rohm Semiconductor
Description: 600V HIGH VOLTAGE 3 PHASE BRIDGE
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOP
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: High-Side
Number of Drivers: 3
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.6V
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: 600V HIGH VOLTAGE 3 PHASE BRIDGE
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOP
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: High-Side
Number of Drivers: 3
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.6V
Part Status: Obsolete
DigiKey Programmable: Not Verified
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од. на суму грн.
BS2132F-E2 |
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Виробник: Rohm Semiconductor
Description: 600V HIGH VOLTAGE 3 PHASE BRIDGE
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOP
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: High-Side
Number of Drivers: 3
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.6V
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: 600V HIGH VOLTAGE 3 PHASE BRIDGE
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOP
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: High-Side
Number of Drivers: 3
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.6V
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 21 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 246.90 грн |
10+ | 199.46 грн |
RPI-0125 |
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Виробник: Rohm Semiconductor
Description: SENSOR OPTICAL 1.2MM MODULE SLOT
Packaging: Tape & Reel (TR)
Package / Case: Slotted Module
Sensing Distance: 0.047" (1.2mm)
Sensing Method: Through-Beam
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Output Configuration: Phototransistor
Response Time: 10µs, 10µs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
Description: SENSOR OPTICAL 1.2MM MODULE SLOT
Packaging: Tape & Reel (TR)
Package / Case: Slotted Module
Sensing Distance: 0.047" (1.2mm)
Sensing Method: Through-Beam
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Output Configuration: Phototransistor
Response Time: 10µs, 10µs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 2250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
750+ | 52.16 грн |
1500+ | 48.40 грн |
2250+ | 47.40 грн |
RPI-0125 |
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Виробник: Rohm Semiconductor
Description: SENSOR OPTICAL 1.2MM MODULE SLOT
Packaging: Cut Tape (CT)
Package / Case: Slotted Module
Sensing Distance: 0.047" (1.2mm)
Sensing Method: Through-Beam
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Output Configuration: Phototransistor
Response Time: 10µs, 10µs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
Description: SENSOR OPTICAL 1.2MM MODULE SLOT
Packaging: Cut Tape (CT)
Package / Case: Slotted Module
Sensing Distance: 0.047" (1.2mm)
Sensing Method: Through-Beam
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Output Configuration: Phototransistor
Response Time: 10µs, 10µs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 3688 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 81.77 грн |
5+ | 69.57 грн |
10+ | 66.05 грн |
25+ | 58.17 грн |
50+ | 55.52 грн |
100+ | 53.08 грн |