Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102566) > Сторінка 834 з 1710
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
RB521SM-40FHT2R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA Current - Reverse Leakage @ Vr: 90 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 3177 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RB521CS-30T2R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
RB521CS-30T2R | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 10 V |
на замовлення 10630 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
SMF14VTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.6A Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: PMDU Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 200W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SMF14VTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.6A Voltage - Reverse Standoff (Typ): 14V (Max) Supplier Device Package: PMDU Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 200W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BD50FA1MG-MTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 450 µA Voltage - Input (Max): 25V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active Voltage Dropout (Max): 3V @ 100mA Protection Features: Over Current, Over Temperature, Reverse Polarity |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BD50FA1MG-MTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 450 µA Voltage - Input (Max): 25V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active Voltage Dropout (Max): 3V @ 100mA Protection Features: Over Current, Over Temperature, Reverse Polarity |
на замовлення 5724 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SCT3030ARC14 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500 |
на замовлення 153 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
RSS070N05FW4TB1 | Rohm Semiconductor | Description: MOSFET N-CH 50V 7A SOP8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
RSS070N05TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 45V 7A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU91796FS-ME2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-SOP (0.213", 5.40mm Width) Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 80 Segment Operating Temperature: -40°C ~ 105°C Voltage - Supply: 2.5V ~ 6V Supplier Device Package: 32-SSOP-A Part Status: Active Current - Supply: 12.5 µA |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BU91796FS-ME2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 32-SOP (0.213", 5.40mm Width) Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 80 Segment Operating Temperature: -40°C ~ 105°C Voltage - Supply: 2.5V ~ 6V Supplier Device Package: 32-SSOP-A Part Status: Active Current - Supply: 12.5 µA |
на замовлення 13945 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BD49K34G-TL | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BD49K34G-TL | Rohm Semiconductor |
![]() |
на замовлення 842 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
RSB33F2T106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz (Max) Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: UMD3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RSB33F2T106 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz (Max) Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: UMD3 Unidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
R8005ANJFRGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
R8005ANJFRGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1848 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
SDR03EZPJ362 | Rohm Semiconductor |
![]() Power (Watts): 0.3W Tolerance: ±5% Features: Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 3.6 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SDR03EZPJ362 | Rohm Semiconductor |
![]() Power (Watts): 0.3W Tolerance: ±5% Features: Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 3.6 kOhms |
на замовлення 3462 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
DTC143ECAT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
DTC143ECAT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
на замовлення 2863 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RF301BGE2STL | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
RF301BGE2STL | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
RF305BM6STL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
RF305BM6STL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 260 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RF305BM6SFHTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
RF305BM6SFHTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2410 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RGW60TK65DGVC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/114ns Switching Energy: 480µJ (on), 490µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 84 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 72 W |
на замовлення 410 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RGTV60TK65DGVC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/105ns Switching Energy: 570µJ (on), 500µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 76 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
RGTV00TK65DGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 102 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 41ns/142ns Switching Energy: 1.17mJ (on), 940µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 104 nC Part Status: Active Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 94 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RGTH00TK65DGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 225 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/143ns Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 94 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 72 W |
на замовлення 448 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RGW60TK65GVC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/114ns Switching Energy: 480µJ (on), 490µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 84 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 72 W |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RGTV60TK65GVC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/105ns Switching Energy: 570µJ (on), 500µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 76 W |
на замовлення 436 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RGTH40TK65GC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 56 W |
на замовлення 319 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RGTH50TK65GC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/94ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 26 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 59 W |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RGTH40TK65DGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/73ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 56 W |
на замовлення 440 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RGTH50TK65DGC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/94ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 26 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 59 W |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RGTH80TK65GC11 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/120ns Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 79 nC Part Status: Active Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 66 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
RB168VAM100TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Current - Reverse Leakage @ Vr: 300 nA @ 100 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
ESR18EZPJ204 | Rohm Semiconductor |
![]() Power (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 200 kOhms |
на замовлення 14854 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
DTA143ZU3T106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
DTA143ZU3T106 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 2346 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
DTA143EEBHZGTL | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
DTA143EEBHZGTL | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BA178M18FP-E2 | Rohm Semiconductor |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BA178M18FP-E2 | Rohm Semiconductor |
![]() |
на замовлення 725 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
DTA143EEFRATL | Rohm Semiconductor | Description: PNP DIGITAL TRANSISTOR (AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
DTA143EEFRATL | Rohm Semiconductor | Description: PNP DIGITAL TRANSISTOR (AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BU52098GWZ-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: CMOS Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±27.5mT Trip, ±18.9mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Test Condition: 25°C |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BU52098GWZ-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: CMOS Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±27.5mT Trip, ±18.9mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Test Condition: 25°C |
на замовлення 6005 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BU52274NUZ-ZE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: CMOS Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±7.4mT Trip, ±4.3mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Test Condition: 25°C |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BU52274NUZ-ZE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: CMOS Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±7.4mT Trip, ±4.3mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Test Condition: 25°C |
на замовлення 12143 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
ML620Q504H-NNNTBWBX | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 16.8MHz Program Memory Size: 64KB (32K x 16) RAM Size: 3K x 16 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 16 Core Processor: nX-U16/100 Data Converters: A/D 12x12b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: Melody Driver, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
ML620Q504H-NNNTBWBX | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 48-TQFP Mounting Type: Surface Mount Speed: 16.8MHz Program Memory Size: 64KB (32K x 16) RAM Size: 3K x 16 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 16 Core Processor: nX-U16/100 Data Converters: A/D 12x12b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SSP, UART/USART Peripherals: Melody Driver, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
R6012JNJGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 7V @ 2.5mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
R6012JNJGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 7V @ 2.5mA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
на замовлення 1296 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BA6209 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: 10-SIP Exposed Tab Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.6A Interface: Parallel Operating Temperature: -20°C ~ 75°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 6V ~ 18V Applications: Media Player Technology: CMOS Voltage - Load: 6.6V ~ 7.2V Supplier Device Package: 10-HSIP Motor Type - AC, DC: Brushed DC Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
2SCR502U3HZGT106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 360MHz Supplier Device Package: UMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
2SCR502U3HZGT106 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 360MHz Supplier Device Package: UMT3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 200 mW Qualification: AEC-Q101 |
на замовлення 636 шт: термін постачання 21-31 дні (днів) |
|
RB521SM-40FHT2R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Qualification: AEC-Q101
на замовлення 3177 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.37 грн |
18+ | 17.58 грн |
100+ | 9.37 грн |
500+ | 7.53 грн |
1000+ | 6.68 грн |
2000+ | 6.13 грн |
RB521CS-30T2R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
RB521CS-30T2R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Description: DIODE SCHOTTKY 30V 100MAVMN2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
на замовлення 10630 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.87 грн |
13+ | 25.23 грн |
100+ | 16.12 грн |
500+ | 11.44 грн |
1000+ | 10.24 грн |
2000+ | 9.24 грн |
SMF14VTR |
![]() |
Виробник: Rohm Semiconductor
Description: TVS DIODE 14VWM 23.2VC PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 14VWM 23.2VC PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 200W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
SMF14VTR |
![]() |
Виробник: Rohm Semiconductor
Description: TVS DIODE 14VWM 23.2VC PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 14VWM 23.2VC PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 200W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
BD50FA1MG-MTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 100MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 450 µA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Description: IC REG LINEAR 5V 100MA 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 450 µA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 42.49 грн |
BD50FA1MG-MTR |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 5V 100MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 450 µA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Description: IC REG LINEAR 5V 100MA 5SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 450 µA
Voltage - Input (Max): 25V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 3V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
на замовлення 5724 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 59.54 грн |
10+ | 52.60 грн |
25+ | 51.92 грн |
50+ | 48.43 грн |
100+ | 43.30 грн |
250+ | 42.94 грн |
500+ | 41.61 грн |
1000+ | 40.12 грн |
SCT3030ARC14 |
![]() |
Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 70A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
Description: SICFET N-CH 650V 70A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 500
на замовлення 153 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2542.84 грн |
30+ | 2397.31 грн |
RSS070N05FW4TB1 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 50V 7A SOP8
Description: MOSFET N-CH 50V 7A SOP8
товару немає в наявності
В кошику
од. на суму грн.
RSS070N05TB1 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET N-CH 45V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
BU91796FS-ME2 |
![]() |
Виробник: Rohm Semiconductor
Description: LOW DUTY LCD SEGMENT DRIVERS FOR
Packaging: Tape & Reel (TR)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 32-SSOP-A
Part Status: Active
Current - Supply: 12.5 µA
Description: LOW DUTY LCD SEGMENT DRIVERS FOR
Packaging: Tape & Reel (TR)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 32-SSOP-A
Part Status: Active
Current - Supply: 12.5 µA
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 66.32 грн |
6000+ | 61.50 грн |
10000+ | 59.13 грн |
BU91796FS-ME2 |
![]() |
Виробник: Rohm Semiconductor
Description: LOW DUTY LCD SEGMENT DRIVERS FOR
Packaging: Cut Tape (CT)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 32-SSOP-A
Part Status: Active
Current - Supply: 12.5 µA
Description: LOW DUTY LCD SEGMENT DRIVERS FOR
Packaging: Cut Tape (CT)
Package / Case: 32-SOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 80 Segment
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 6V
Supplier Device Package: 32-SSOP-A
Part Status: Active
Current - Supply: 12.5 µA
на замовлення 13945 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 144.49 грн |
10+ | 125.38 грн |
25+ | 118.25 грн |
100+ | 94.56 грн |
250+ | 88.79 грн |
500+ | 77.69 грн |
1000+ | 63.32 грн |
BD49K34G-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
товару немає в наявності
В кошику
од. на суму грн.
BD49K34G-TL |
![]() |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 842 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RSB33F2T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Description: TVS DIODE 25VWM UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 9.32 грн |
RSB33F2T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TVS DIODE 25VWM UMD3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
Description: TVS DIODE 25VWM UMD3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: UMD3
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.34 грн |
12+ | 25.53 грн |
100+ | 17.41 грн |
500+ | 12.25 грн |
1000+ | 9.19 грн |
R8005ANJFRGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 105.72 грн |
R8005ANJFRGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 5A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2.5A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1848 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 161.95 грн |
10+ | 131.64 грн |
100+ | 105.01 грн |
SDR03EZPJ362 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 3.6 KOHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.6 kOhms
Description: RES SMD 3.6 KOHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.6 kOhms
товару немає в наявності
В кошику
од. на суму грн.
SDR03EZPJ362 |
![]() |
Виробник: Rohm Semiconductor
Description: RES SMD 3.6 KOHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.6 kOhms
Description: RES SMD 3.6 KOHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 3.6 kOhms
на замовлення 3462 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
37+ | 8.73 грн |
42+ | 7.34 грн |
108+ | 2.84 грн |
1000+ | 1.17 грн |
2500+ | 1.01 грн |
DTC143ECAT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
DTC143ECAT116 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 2863 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.67 грн |
32+ | 9.79 грн |
100+ | 6.05 грн |
500+ | 4.16 грн |
1000+ | 3.67 грн |
RF301BGE2STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252GE
Description: DIODE GEN PURP 200V 3A TO252GE
товару немає в наявності
В кошику
од. на суму грн.
RF301BGE2STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A TO252GE
Description: DIODE GEN PURP 200V 3A TO252GE
товару немає в наявності
В кошику
од. на суму грн.
RF305BM6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
RF305BM6STL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 260 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 82.56 грн |
10+ | 70.87 грн |
100+ | 55.23 грн |
RF305BM6SFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
RF305BM6SFHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 3A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2410 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 76.21 грн |
10+ | 65.52 грн |
100+ | 51.08 грн |
500+ | 39.59 грн |
1000+ | 31.26 грн |
RGW60TK65DGVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 33A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
Description: IGBT TRENCH FS 650V 33A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
на замовлення 410 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 381.07 грн |
10+ | 248.00 грн |
RGTV60TK65DGVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
товару немає в наявності
В кошику
од. на суму грн.
RGTV00TK65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 45A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/142ns
Switching Energy: 1.17mJ (on), 940µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 45A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/142ns
Switching Energy: 1.17mJ (on), 940µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 94 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 462.84 грн |
10+ | 304.50 грн |
450+ | 280.70 грн |
RGTH00TK65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 35A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 225 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 72 W
Description: IGBT TRENCH FS 650V 35A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 225 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 72 W
на замовлення 448 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 320.73 грн |
30+ | 170.53 грн |
120+ | 140.02 грн |
RGW60TK65GVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/114ns
Switching Energy: 480µJ (on), 490µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 72 W
на замовлення 102 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 410.44 грн |
30+ | 313.26 грн |
RGTV60TK65GVC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
Description: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
на замовлення 436 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 288.98 грн |
30+ | 220.63 грн |
120+ | 189.12 грн |
RGTH40TK65GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 23A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
Description: IGBT TRENCH FS 650V 23A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
на замовлення 319 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 239.76 грн |
30+ | 124.94 грн |
120+ | 101.47 грн |
RGTH50TK65GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 26A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
Description: IGBT TRENCH FS 650V 26A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
на замовлення 446 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 250.87 грн |
30+ | 130.73 грн |
120+ | 106.35 грн |
RGTH40TK65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 23A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
Description: IGBT TRNCH FIELD 650V 23A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
на замовлення 440 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 465.22 грн |
30+ | 255.98 грн |
120+ | 213.67 грн |
RGTH50TK65DGC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 26A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
Description: IGBT TRNCH FIELD 650V 26A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 59 W
на замовлення 445 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 307.24 грн |
30+ | 234.37 грн |
120+ | 200.89 грн |
RGTH80TK65GC11 |
![]() |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 66 W
Description: IGBT TRNCH FIELD 650V 31A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 66 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 204.82 грн |
30+ | 158.35 грн |
120+ | 130.28 грн |
RB168VAM100TR |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 100V 1A TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
Description: DIODE SCHOTTKY 100V 1A TUMD2M
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 nA @ 100 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 6.14 грн |
6000+ | 5.32 грн |
9000+ | 5.05 грн |
15000+ | 4.68 грн |
21000+ | 4.66 грн |
ESR18EZPJ204 |
![]() |
Виробник: Rohm Semiconductor
Description: RES 200K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 200 kOhms
Description: RES 200K OHM 5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 200 kOhms
на замовлення 14854 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 12.70 грн |
50+ | 6.12 грн |
76+ | 4.07 грн |
100+ | 3.27 грн |
500+ | 2.42 грн |
1000+ | 2.17 грн |
DTA143ZU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
DTA143ZU3T106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 0.1A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 2346 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 12.70 грн |
41+ | 7.57 грн |
100+ | 4.69 грн |
500+ | 3.20 грн |
1000+ | 2.81 грн |
DTA143EEBHZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Description: PNP DIGITAL TRANSISTOR (WITH BUI
товару немає в наявності
В кошику
од. на суму грн.
DTA143EEBHZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (WITH BUI
Description: PNP DIGITAL TRANSISTOR (WITH BUI
товару немає в наявності
В кошику
од. на суму грн.
BA178M18FP-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 18V 500MA TO252-3
Description: IC REG LINEAR 18V 500MA TO252-3
товару немає в наявності
В кошику
од. на суму грн.
BA178M18FP-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 18V 500MA TO252-3
Description: IC REG LINEAR 18V 500MA TO252-3
на замовлення 725 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 77.80 грн |
10+ | 67.12 грн |
25+ | 63.70 грн |
100+ | 49.12 грн |
250+ | 45.91 грн |
500+ | 40.57 грн |
DTA143EEFRATL |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
DTA143EEFRATL |
Виробник: Rohm Semiconductor
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
Description: PNP DIGITAL TRANSISTOR (AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
BU52098GWZ-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±27.5mT Trip, ±18.9mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±27.5mT Trip, ±18.9mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 20.19 грн |
6000+ | 18.73 грн |
BU52098GWZ-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±27.5mT Trip, ±18.9mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±27.5mT Trip, ±18.9mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
на замовлення 6005 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 35.73 грн |
11+ | 28.44 грн |
25+ | 24.91 грн |
50+ | 23.66 грн |
100+ | 22.53 грн |
500+ | 19.94 грн |
1000+ | 19.11 грн |
BU52274NUZ-ZE2 |
![]() |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 14.96 грн |
10000+ | 13.89 грн |
BU52274NUZ-ZE2 |
![]() |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±7.4mT Trip, ±4.3mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
на замовлення 12143 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 42.08 грн |
9+ | 35.32 грн |
10+ | 33.41 грн |
25+ | 29.27 грн |
50+ | 27.84 грн |
100+ | 26.55 грн |
500+ | 23.53 грн |
1000+ | 22.58 грн |
ML620Q504H-NNNTBWBX |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
ML620Q504H-NNNTBWBX |
![]() |
Виробник: Rohm Semiconductor
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 16.8MHz
Program Memory Size: 64KB (32K x 16)
RAM Size: 3K x 16
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 16
Core Processor: nX-U16/100
Data Converters: A/D 12x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SSP, UART/USART
Peripherals: Melody Driver, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
R6012JNJGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: MOSFET N-CH 600V 12A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 120.15 грн |
R6012JNJGTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: MOSFET N-CH 600V 12A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 6A, 15V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 7V @ 2.5mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
на замовлення 1296 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 235.79 грн |
10+ | 179.12 грн |
100+ | 140.34 грн |
500+ | 114.65 грн |
BA6209 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 6V-18V 10HSIP
Packaging: Tube
Package / Case: 10-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: Parallel
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Applications: Media Player
Technology: CMOS
Voltage - Load: 6.6V ~ 7.2V
Supplier Device Package: 10-HSIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 6V-18V 10HSIP
Packaging: Tube
Package / Case: 10-SIP Exposed Tab
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.6A
Interface: Parallel
Operating Temperature: -20°C ~ 75°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Applications: Media Player
Technology: CMOS
Voltage - Load: 6.6V ~ 7.2V
Supplier Device Package: 10-HSIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
2SCR502U3HZGT106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
2SCR502U3HZGT106 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
Description: TRANS NPN 30V 0.5A UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: UMT3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 200 mW
Qualification: AEC-Q101
на замовлення 636 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.40 грн |
16+ | 19.27 грн |
100+ | 11.54 грн |
500+ | 10.03 грн |