Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (107841) > Сторінка 862 з 1798
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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LM393FVT-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 2CH 8-TSSOP-BPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 8-TSSOP-B Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 4.5mV @ 1.4V Current - Input Bias (Max): 0.05µA @ 1.4V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 5055 шт: термін постачання 21-31 дні (днів) |
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LM393FVM-TR | Rohm Semiconductor |
Description: IC COMPARATOR 2CH 8-MSOPPackaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 8-MSOP Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 4.5mV @ 1.4V Current - Input Bias (Max): 0.05µA @ 1.4V Current - Output (Typ): 16mA @ 5V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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LM393FVM-TR | Rohm Semiconductor |
Description: IC COMPARATOR 2CH 8-MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 8-MSOP Current - Quiescent (Max): 1mA Voltage - Input Offset (Max): 4.5mV @ 1.4V Current - Input Bias (Max): 0.05µA @ 1.4V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 1068 шт: термін постачання 21-31 дні (днів) |
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RFUH20TB4SNZC9 | Rohm Semiconductor |
Description: DIODE STANDARD 430V 20A TO220NFMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 430 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 430 V |
на замовлення 949 шт: термін постачання 21-31 дні (днів) |
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RFN20TB4SNZC9 | Rohm Semiconductor |
Description: DIODE STANDARD 430V 20A TO220NFMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 430 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 430 V |
на замовлення 68 шт: термін постачання 21-31 дні (днів) |
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BD70H31G-CTR | Rohm Semiconductor |
Description: SUPERVISORY VOLTAGE DETECTOR RESPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active High Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 20µs Minimum Voltage - Threshold: 3.06V Supplier Device Package: 5-SSOP Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BD70H31G-CTR | Rohm Semiconductor |
Description: SUPERVISORY VOLTAGE DETECTOR RESPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Voltage Detector Reset: Active High Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 20µs Minimum Voltage - Threshold: 3.06V Supplier Device Package: 5-SSOP Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2834 шт: термін постачання 21-31 дні (днів) |
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R6504KNXC7G | Rohm Semiconductor |
Description: 650V 4A TO-220FM, HIGH-SPEED SWIPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 130µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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R6504ENXC7G | Rohm Semiconductor |
Description: 650V 4A TO-220FM, LOW-NOISE POWEPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 130µA Supplier Device Package: TO-220FM Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V |
на замовлення 988 шт: термін постачання 21-31 дні (днів) |
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RD3U080CNTL1 | Rohm Semiconductor |
Description: MOSFET N-CH 250V 8A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RD3U080CNTL1 | Rohm Semiconductor |
Description: MOSFET N-CH 250V 8A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V |
на замовлення 5011 шт: термін постачання 21-31 дні (днів) |
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RD3L150SNTL1 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 15A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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RD3L150SNTL1 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 15A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V |
на замовлення 10917 шт: термін постачання 21-31 дні (днів) |
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SML-H12P8TT86C | Rohm Semiconductor |
Description: LED GREEN CLEAR 2012 SMDPackaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Color: Green Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 4mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.90mm Wavelength - Dominant: 560nm Supplier Device Package: 2012 (0805) Lens Transparency: Clear Grade: Automotive Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.52mm x 1.25mm Qualification: AEC-Q101 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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SML-H12P8TT86C | Rohm Semiconductor |
Description: LED GREEN CLEAR 2012 SMDPackaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Color: Green Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 4mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.2V Lens Color: Colorless Current - Test: 20mA Height (Max): 0.90mm Wavelength - Dominant: 560nm Supplier Device Package: 2012 (0805) Lens Transparency: Clear Grade: Automotive Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.52mm x 1.25mm Qualification: AEC-Q101 |
на замовлення 38399 шт: термін постачання 21-31 дні (днів) |
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SMLMN2BCTT86C | Rohm Semiconductor |
Description: LED BLUE CLEAR 2012 SMDPackaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Color: Blue Size / Dimension: 2.00mm L x 1.25mm W Mounting Type: Surface Mount Millicandela Rating: 36mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 2.9V Lens Color: Colorless Current - Test: 5mA Height (Max): 0.90mm Wavelength - Dominant: 470nm Supplier Device Package: 2012(0805) Lens Transparency: Clear Grade: Automotive Part Status: Active Lens Style: Rectangle with Flat Top Lens Size: 1.40mm x 0.85mm Qualification: AEC-Q102 |
на замовлення 21672 шт: термін постачання 21-31 дні (днів) |
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LM2901F-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 4CH 14-SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 4 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 14-SOP Current - Quiescent (Max): 2mA Voltage - Input Offset (Max): 4.5mV @ 1.4V Current - Input Bias (Max): 0.05µA @ 1.4V Current - Output (Typ): 16mA @ 5V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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LM2901F-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 4CH 14-SOPPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.173", 4.40mm Width) Output Type: Open-Collector Mounting Type: Surface Mount Number of Elements: 4 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Supplier Device Package: 14-SOP Current - Quiescent (Max): 2mA Voltage - Input Offset (Max): 4.5mV @ 1.4V Current - Input Bias (Max): 0.05µA @ 1.4V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 2409 шт: термін постачання 21-31 дні (днів) |
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R6002ENHTB1 | Rohm Semiconductor |
Description: 600V 1.7A SOP8, LOW-NOISE POWERPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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R6002ENHTB1 | Rohm Semiconductor |
Description: 600V 1.7A SOP8, LOW-NOISE POWERPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V |
на замовлення 1489 шт: термін постачання 21-31 дні (днів) |
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| ML620Q156-607TBZWARL | Rohm Semiconductor | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA144WCAT116 | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SST3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| ML610Q174-480GAZWAX | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BD91N01NUX-E2 | Rohm Semiconductor |
Description: USB TYPE-C SINK PORT DETECTION APackaging: Tape & Reel (TR) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.7V ~ 5.5V Applications: USB Type C Current - Supply: 125µA Supplier Device Package: VSON010X3020 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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BD91N01NUX-E2 | Rohm Semiconductor |
Description: USB TYPE-C SINK PORT DETECTION APackaging: Cut Tape (CT) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.7V ~ 5.5V Applications: USB Type C Current - Supply: 125µA Supplier Device Package: VSON010X3020 Part Status: Active |
на замовлення 3936 шт: термін постачання 21-31 дні (днів) |
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RFUH20TB3SNZC9 | Rohm Semiconductor |
Description: DIODE STANDARD 350V 20A TO220NFMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 10 nA @ 350 V |
на замовлення 879 шт: термін постачання 21-31 дні (днів) |
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RFN5TF6SC9 | Rohm Semiconductor |
Description: DIODE STANDARD 600V 5A TO220NFMPackaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 474 шт: термін постачання 21-31 дні (днів) |
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RQ6E060ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 6A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V |
на замовлення 693 шт: термін постачання 21-31 дні (днів) |
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RQ6G050ATTCR | Rohm Semiconductor |
Description: PCH -30V -5A POWER MOSFET - RQ6GPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RQ6G050ATTCR | Rohm Semiconductor |
Description: PCH -30V -5A POWER MOSFET - RQ6GPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V |
на замовлення 14048 шт: термін постачання 21-31 дні (днів) |
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UT6JB5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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UT6JB5TCR | Rohm Semiconductor |
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RQ6E030ATTCR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 3A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V |
на замовлення 243 шт: термін постачання 21-31 дні (днів) |
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RAQ045P01TCR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4.5A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V |
на замовлення 7336 шт: термін постачання 21-31 дні (днів) |
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RF4L070BGTCR | Rohm Semiconductor |
Description: NCH 60V 7A, HUML2020L8, POWER MOPackaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN2020-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RF4L070BGTCR | Rohm Semiconductor |
Description: NCH 60V 7A, HUML2020L8, POWER MOPackaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN2020-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V |
на замовлення 1766 шт: термін постачання 21-31 дні (днів) |
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RF4G100BGTCR | Rohm Semiconductor |
Description: NCH 40V 10A, HUML2020L8, POWER MPackaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN2020-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RF4G100BGTCR | Rohm Semiconductor |
Description: NCH 40V 10A, HUML2020L8, POWER MPackaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN2020-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V |
на замовлення 767 шт: термін постачання 21-31 дні (днів) |
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RQ7G080BGTCR | Rohm Semiconductor |
Description: NCH 40V 8A, TSMT8, POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RQ7G080BGTCR | Rohm Semiconductor |
Description: NCH 40V 8A, TSMT8, POWER MOSFETPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V |
на замовлення 3100 шт: термін постачання 21-31 дні (днів) |
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| BS2100F-E2 | Rohm Semiconductor |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 18V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOP Rise / Fall Time (Typ): 200ns, 100ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1V, 2.6V Current - Peak Output (Source, Sink): 60mA, 130mA Part Status: Last Time Buy DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML610Q178-022GAZ0AAL | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ML610Q178-022GAZ0AX | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SFR01MZPJ332 | Rohm Semiconductor |
Description: RES 3.3K OHM 5% 1/16W 0402Power (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Anti-Sulfur Packaging: Cut Tape (CT) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 3.3 kOhms |
на замовлення 48714 шт: термін постачання 21-31 дні (днів) |
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BM2P134Q-Z | Rohm Semiconductor |
Description: IC OFFLINE SW FULL-BRIDGE 7DIP |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BM2P121X-Z | Rohm Semiconductor |
Description: IC REG BUCK 850A 7DIPKPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Number of Outputs: 1 Current - Output: 850µA Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 65kHz Voltage - Input (Max): 12.96V Topology: Buck Supplier Device Package: 7-DIPK Synchronous Rectifier: No Voltage - Input (Min): 9.5V |
на замовлення 941 шт: термін постачання 21-31 дні (днів) |
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BM2SC124FP2-LBZE2 | Rohm Semiconductor |
Description: IC OFFLINE SW FLYBACK TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Frequency - Switching: 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-263-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Control Features: EN, Frequency Control, Soft Start Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
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BM2SC124FP2-LBZE2 | Rohm Semiconductor |
Description: IC OFFLINE SW FLYBACK TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Frequency - Switching: 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-263-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Control Features: EN, Frequency Control, Soft Start Part Status: Active |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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BM2SC121FP2-LBZE2 | Rohm Semiconductor |
Description: IC OFFLINE SW FLYBACK TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Frequency - Switching: 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-263-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Control Features: EN, Frequency Control, Soft Start Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
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BM2SC121FP2-LBZE2 | Rohm Semiconductor |
Description: IC OFFLINE SW FLYBACK TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Frequency - Switching: 120kHz Internal Switch(s): Yes Voltage - Breakdown: 1700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Supplier Device Package: TO-263-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Control Features: EN, Frequency Control, Soft Start Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RGTV80TK65DGVC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 39A TO-3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 101 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/113ns Switching Energy: 1.02mJ (on), 710µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 81 nC Part Status: Active Current - Collector (Ic) (Max): 39 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 85 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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MCR03EZPFX8203 | Rohm Semiconductor |
Description: RES SMD 820K OHM 1% 1/10W 0603Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 820 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MCR03EZPFX8202 | Rohm Semiconductor |
Description: RES SMD 82K OHM 1% 1/10W 0603Power (Watts): 0.1W, 1/10W Tolerance: ±1% Features: Automotive AEC-Q200 Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 82 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMT1NFHATN | Rohm Semiconductor |
Description: TRANS 2PNP DUAL 50V 150MA UMT6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: UMT6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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UMH11NFHATN | Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V UMT6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: UMT6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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UMH11NFHATN | Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V UMT6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: UMT6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3338 шт: термін постачання 21-31 дні (днів) |
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BD57021MWV-E2 | Rohm Semiconductor |
Description: IC WIRELESS PWR TX UQFN040V5050Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 4.2V ~ 5.3V Applications: Wireless Power Transmitter Current - Supply: 15mA Supplier Device Package: UQFN040V5050 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDR10EZPJ121 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPower (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 120 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPJ121 | Rohm Semiconductor |
Description: HIGH ANTI-SURGE THICK FILM CHIPPower (Watts): 0.5W, 1/2W Tolerance: ±5% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 120 Ohms |
на замовлення 9318 шт: термін постачання 21-31 дні (днів) |
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SFR01MZPJ121 | Rohm Semiconductor |
Description: SULFUR TOLERANT CHIP RESISTORSPower (Watts): 0.063W, 1/16W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Packaging: Tape & Reel (TR) Package / Case: 0402 (1005 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0402 Height - Seated (Max): 0.016" (0.40mm) Resistance: 120 Ohms |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| LM393FVT-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2CH 8-TSSOP-B
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-TSSOP-B
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2CH 8-TSSOP-B
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-TSSOP-B
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 5055 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.38 грн |
| 10+ | 40.79 грн |
| 25+ | 36.75 грн |
| 100+ | 30.26 грн |
| 250+ | 28.25 грн |
| 500+ | 27.03 грн |
| 1000+ | 25.79 грн |
| LM393FVM-TR |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2CH 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2CH 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| LM393FVM-TR |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2CH 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 2CH 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 8-MSOP
Current - Quiescent (Max): 1mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 1068 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.76 грн |
| 11+ | 28.75 грн |
| 25+ | 25.71 грн |
| 100+ | 21.02 грн |
| 250+ | 19.55 грн |
| 500+ | 18.66 грн |
| 1000+ | 17.63 грн |
| RFUH20TB4SNZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 430V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Description: DIODE STANDARD 430V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
на замовлення 949 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.78 грн |
| 10+ | 120.78 грн |
| 50+ | 91.97 грн |
| 100+ | 77.59 грн |
| 500+ | 62.32 грн |
| RFN20TB4SNZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 430V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
Description: DIODE STANDARD 430V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 430 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 430 V
на замовлення 68 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.61 грн |
| 50+ | 91.80 грн |
| BD70H31G-CTR |
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Виробник: Rohm Semiconductor
Description: SUPERVISORY VOLTAGE DETECTOR RES
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 20µs Minimum
Voltage - Threshold: 3.06V
Supplier Device Package: 5-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
Description: SUPERVISORY VOLTAGE DETECTOR RES
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 20µs Minimum
Voltage - Threshold: 3.06V
Supplier Device Package: 5-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BD70H31G-CTR |
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Виробник: Rohm Semiconductor
Description: SUPERVISORY VOLTAGE DETECTOR RES
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 20µs Minimum
Voltage - Threshold: 3.06V
Supplier Device Package: 5-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
Description: SUPERVISORY VOLTAGE DETECTOR RES
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Voltage Detector
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 20µs Minimum
Voltage - Threshold: 3.06V
Supplier Device Package: 5-SSOP
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2834 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.63 грн |
| 10+ | 37.89 грн |
| 25+ | 34.10 грн |
| 100+ | 28.06 грн |
| 250+ | 26.18 грн |
| 500+ | 25.05 грн |
| 1000+ | 23.72 грн |
| R6504KNXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 4A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: 650V 4A TO-220FM, HIGH-SPEED SWI
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 130µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 232.79 грн |
| 10+ | 145.25 грн |
| 50+ | 111.44 грн |
| 100+ | 94.37 грн |
| 500+ | 76.44 грн |
| R6504ENXC7G |
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Виробник: Rohm Semiconductor
Description: 650V 4A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Description: 650V 4A TO-220FM, LOW-NOISE POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
на замовлення 988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.27 грн |
| 50+ | 70.65 грн |
| 100+ | 68.29 грн |
| 500+ | 63.10 грн |
| RD3U080CNTL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Description: MOSFET N-CH 250V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 63.38 грн |
| RD3U080CNTL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Description: MOSFET N-CH 250V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
на замовлення 5011 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.20 грн |
| 10+ | 131.83 грн |
| 50+ | 100.59 грн |
| 100+ | 84.94 грн |
| 500+ | 68.37 грн |
| RD3L150SNTL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Description: MOSFET N-CH 60V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 35.71 грн |
| 7500+ | 30.77 грн |
| RD3L150SNTL1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Description: MOSFET N-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
на замовлення 10917 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.06 грн |
| 10+ | 78.92 грн |
| 50+ | 59.29 грн |
| 100+ | 49.69 грн |
| 500+ | 39.26 грн |
| SML-H12P8TT86C |
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Виробник: Rohm Semiconductor
Description: LED GREEN CLEAR 2012 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Grade: Automotive
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Qualification: AEC-Q101
Description: LED GREEN CLEAR 2012 SMD
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Grade: Automotive
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.71 грн |
| 6000+ | 6.05 грн |
| 9000+ | 5.85 грн |
| 15000+ | 5.27 грн |
| 21000+ | 5.13 грн |
| 30000+ | 5.01 грн |
| SML-H12P8TT86C |
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Виробник: Rohm Semiconductor
Description: LED GREEN CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Grade: Automotive
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Qualification: AEC-Q101
Description: LED GREEN CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Green
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 4mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.2V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 0.90mm
Wavelength - Dominant: 560nm
Supplier Device Package: 2012 (0805)
Lens Transparency: Clear
Grade: Automotive
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.52mm x 1.25mm
Qualification: AEC-Q101
на замовлення 38399 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.59 грн |
| 23+ | 13.80 грн |
| 100+ | 9.72 грн |
| 500+ | 7.38 грн |
| 1000+ | 6.80 грн |
| SMLMN2BCTT86C |
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Виробник: Rohm Semiconductor
Description: LED BLUE CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Blue
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 36mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.90mm
Wavelength - Dominant: 470nm
Supplier Device Package: 2012(0805)
Lens Transparency: Clear
Grade: Automotive
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.40mm x 0.85mm
Qualification: AEC-Q102
Description: LED BLUE CLEAR 2012 SMD
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Color: Blue
Size / Dimension: 2.00mm L x 1.25mm W
Mounting Type: Surface Mount
Millicandela Rating: 36mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.9V
Lens Color: Colorless
Current - Test: 5mA
Height (Max): 0.90mm
Wavelength - Dominant: 470nm
Supplier Device Package: 2012(0805)
Lens Transparency: Clear
Grade: Automotive
Part Status: Active
Lens Style: Rectangle with Flat Top
Lens Size: 1.40mm x 0.85mm
Qualification: AEC-Q102
на замовлення 21672 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.05 грн |
| 14+ | 22.95 грн |
| 100+ | 16.41 грн |
| 500+ | 12.64 грн |
| 1000+ | 11.74 грн |
| LM2901F-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4CH 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 4CH 14-SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| LM2901F-E2 |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR 4CH 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 4CH 14-SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Output Type: Open-Collector
Mounting Type: Surface Mount
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Supplier Device Package: 14-SOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 4.5mV @ 1.4V
Current - Input Bias (Max): 0.05µA @ 1.4V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 2409 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.72 грн |
| 10+ | 58.63 грн |
| 25+ | 52.98 грн |
| 100+ | 43.93 грн |
| 250+ | 41.17 грн |
| 500+ | 39.50 грн |
| 1000+ | 38.05 грн |
| R6002ENHTB1 |
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Виробник: Rohm Semiconductor
Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| R6002ENHTB1 |
![]() |
Виробник: Rohm Semiconductor
Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Description: 600V 1.7A SOP8, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
на замовлення 1489 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.85 грн |
| 10+ | 79.60 грн |
| 50+ | 59.73 грн |
| 100+ | 50.05 грн |
| 500+ | 39.49 грн |
| ML620Q156-607TBZWARL |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
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од. на суму грн.
| DTA144WCAT116 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: SST3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ML610Q174-480GAZWAX |
![]() |
Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| BD91N01NUX-E2 |
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Виробник: Rohm Semiconductor
Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BD91N01NUX-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
Description: USB TYPE-C SINK PORT DETECTION A
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.7V ~ 5.5V
Applications: USB Type C
Current - Supply: 125µA
Supplier Device Package: VSON010X3020
Part Status: Active
на замовлення 3936 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.06 грн |
| 10+ | 77.24 грн |
| 25+ | 70.15 грн |
| 100+ | 58.48 грн |
| 250+ | 54.97 грн |
| 500+ | 52.86 грн |
| 1000+ | 51.53 грн |
| RFUH20TB3SNZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 nA @ 350 V
Description: DIODE STANDARD 350V 20A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 10 nA @ 350 V
на замовлення 879 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 193.99 грн |
| 10+ | 120.24 грн |
| 50+ | 91.59 грн |
| 100+ | 77.28 грн |
| 500+ | 62.06 грн |
| RFN5TF6SC9 |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 600V 5A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 5A TO220NFM
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 474 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.82 грн |
| 10+ | 117.88 грн |
| 50+ | 89.74 грн |
| 100+ | 75.71 грн |
| RQ6E060ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 6A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
Description: MOSFET P-CH 30V 6A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 6A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 15 V
на замовлення 693 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.10 грн |
| 10+ | 52.23 грн |
| 100+ | 34.33 грн |
| 500+ | 25.00 грн |
| RQ6G050ATTCR |
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Виробник: Rohm Semiconductor
Description: PCH -30V -5A POWER MOSFET - RQ6G
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Description: PCH -30V -5A POWER MOSFET - RQ6G
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 24.88 грн |
| 9000+ | 21.32 грн |
| RQ6G050ATTCR |
![]() |
Виробник: Rohm Semiconductor
Description: PCH -30V -5A POWER MOSFET - RQ6G
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
Description: PCH -30V -5A POWER MOSFET - RQ6G
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V
на замовлення 14048 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.60 грн |
| 10+ | 58.48 грн |
| 50+ | 43.54 грн |
| 100+ | 36.31 грн |
| 500+ | 28.32 грн |
| UT6JB5TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| UT6JB5TCR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2P-CH 40V 3.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 20V
Rds On (Max) @ Id, Vgs: 122mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| RQ6E030ATTCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
Description: MOSFET P-CH 30V 3A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.38 грн |
| 10+ | 35.45 грн |
| 50+ | 25.99 грн |
| 100+ | 21.50 грн |
| RAQ045P01TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Description: MOSFET P-CH 12V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
на замовлення 7336 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.05 грн |
| 10+ | 31.95 грн |
| 100+ | 20.57 грн |
| 500+ | 14.69 грн |
| 1000+ | 13.21 грн |
| RF4L070BGTCR |
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Виробник: Rohm Semiconductor
Description: NCH 60V 7A, HUML2020L8, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Description: NCH 60V 7A, HUML2020L8, POWER MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RF4L070BGTCR |
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Виробник: Rohm Semiconductor
Description: NCH 60V 7A, HUML2020L8, POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
Description: NCH 60V 7A, HUML2020L8, POWER MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 30 V
на замовлення 1766 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.93 грн |
| 10+ | 62.52 грн |
| 50+ | 46.59 грн |
| 100+ | 38.87 грн |
| 500+ | 30.36 грн |
| RF4G100BGTCR |
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Виробник: Rohm Semiconductor
Description: NCH 40V 10A, HUML2020L8, POWER M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Description: NCH 40V 10A, HUML2020L8, POWER M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RF4G100BGTCR |
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Виробник: Rohm Semiconductor
Description: NCH 40V 10A, HUML2020L8, POWER M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Description: NCH 40V 10A, HUML2020L8, POWER M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
на замовлення 767 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.27 грн |
| 10+ | 66.26 грн |
| 50+ | 49.36 грн |
| 100+ | 41.20 грн |
| 500+ | 32.18 грн |
| RQ7G080BGTCR |
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Виробник: Rohm Semiconductor
Description: NCH 40V 8A, TSMT8, POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Description: NCH 40V 8A, TSMT8, POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RQ7G080BGTCR |
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Виробник: Rohm Semiconductor
Description: NCH 40V 8A, TSMT8, POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
Description: NCH 40V 8A, TSMT8, POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 20 V
на замовлення 3100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 78.39 грн |
| 10+ | 50.93 грн |
| 100+ | 38.60 грн |
| 500+ | 31.56 грн |
| BS2100F-E2 |
Виробник: Rohm Semiconductor
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOP
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.6V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOP
Rise / Fall Time (Typ): 200ns, 100ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.6V
Current - Peak Output (Source, Sink): 60mA, 130mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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од. на суму грн.
| ML610Q178-022GAZ0AAL |
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Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| ML610Q178-022GAZ0AX |
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Виробник: Rohm Semiconductor
Description: IC
Description: IC
товару немає в наявності
В кошику
од. на суму грн.
| SFR01MZPJ332 |
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Виробник: Rohm Semiconductor
Description: RES 3.3K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 3.3 kOhms
Description: RES 3.3K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 3.3 kOhms
на замовлення 48714 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.50 грн |
| 73+ | 4.19 грн |
| 112+ | 2.74 грн |
| 132+ | 2.18 грн |
| 500+ | 1.54 грн |
| 1000+ | 1.34 грн |
| 5000+ | 0.99 грн |
| BM2P134Q-Z |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SW FULL-BRIDGE 7DIP
Description: IC OFFLINE SW FULL-BRIDGE 7DIP
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)
| BM2P121X-Z |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK 850A 7DIPK
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Current - Output: 850µA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 65kHz
Voltage - Input (Max): 12.96V
Topology: Buck
Supplier Device Package: 7-DIPK
Synchronous Rectifier: No
Voltage - Input (Min): 9.5V
Description: IC REG BUCK 850A 7DIPK
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Number of Outputs: 1
Current - Output: 850µA
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 65kHz
Voltage - Input (Max): 12.96V
Topology: Buck
Supplier Device Package: 7-DIPK
Synchronous Rectifier: No
Voltage - Input (Min): 9.5V
на замовлення 941 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.32 грн |
| 10+ | 143.73 грн |
| 50+ | 124.12 грн |
| 100+ | 110.79 грн |
| 250+ | 104.77 грн |
| 500+ | 101.15 грн |
| BM2SC124FP2-LBZE2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-263-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: EN, Frequency Control, Soft Start
Part Status: Active
Description: IC OFFLINE SW FLYBACK TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-263-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: EN, Frequency Control, Soft Start
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| BM2SC124FP2-LBZE2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-263-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: EN, Frequency Control, Soft Start
Part Status: Active
Description: IC OFFLINE SW FLYBACK TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-263-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: EN, Frequency Control, Soft Start
Part Status: Active
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1063.38 грн |
| 10+ | 710.70 грн |
| 25+ | 628.92 грн |
| BM2SC121FP2-LBZE2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-263-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: EN, Frequency Control, Soft Start
Part Status: Active
Description: IC OFFLINE SW FLYBACK TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-263-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: EN, Frequency Control, Soft Start
Part Status: Active
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Мінімальне замовлення: 500 шт
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| BM2SC121FP2-LBZE2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SW FLYBACK TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-263-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: EN, Frequency Control, Soft Start
Part Status: Active
Description: IC OFFLINE SW FLYBACK TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 1700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Supplier Device Package: TO-263-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: EN, Frequency Control, Soft Start
Part Status: Active
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| RGTV80TK65DGVC11 |
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Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/113ns
Switching Energy: 1.02mJ (on), 710µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 85 W
Description: IGBT TRENCH FS 650V 39A TO-3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/113ns
Switching Energy: 1.02mJ (on), 710µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 85 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 586.72 грн |
| 30+ | 328.22 грн |
| 120+ | 276.34 грн |
| MCR03EZPFX8203 |
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Виробник: Rohm Semiconductor
Description: RES SMD 820K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 820 kOhms
Description: RES SMD 820K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 820 kOhms
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| MCR03EZPFX8202 |
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Виробник: Rohm Semiconductor
Description: RES SMD 82K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 82 kOhms
Description: RES SMD 82K OHM 1% 1/10W 0603
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 82 kOhms
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| UMT1NFHATN |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP DUAL 50V 150MA UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TRANS 2PNP DUAL 50V 150MA UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.83 грн |
| UMH11NFHATN |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| UMH11NFHATN |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: UMT6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3338 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.63 грн |
| 15+ | 21.04 грн |
| 100+ | 13.35 грн |
| 500+ | 9.39 грн |
| 1000+ | 8.37 грн |
| BD57021MWV-E2 |
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Виробник: Rohm Semiconductor
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 4.2V ~ 5.3V
Applications: Wireless Power Transmitter
Current - Supply: 15mA
Supplier Device Package: UQFN040V5050
Part Status: Obsolete
Description: IC WIRELESS PWR TX UQFN040V5050
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 4.2V ~ 5.3V
Applications: Wireless Power Transmitter
Current - Supply: 15mA
Supplier Device Package: UQFN040V5050
Part Status: Obsolete
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| SDR10EZPJ121 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 2.45 грн |
| SDR10EZPJ121 |
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Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 Ohms
на замовлення 9318 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 17.42 грн |
| 36+ | 8.54 грн |
| 54+ | 5.72 грн |
| 100+ | 4.57 грн |
| 500+ | 3.28 грн |
| 1000+ | 2.89 грн |
| SFR01MZPJ121 |
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Виробник: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 120 Ohms
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 120 Ohms
товару немає в наявності
Мінімальне замовлення: 10000 шт
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